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1. 发明授权

US10205008B2 Manufacturing method of semiconductor device 有权
公开(公告)号：US10205008B2
公开(公告)日：2019-02-12
申请号：US15664353
申请日：2017-07-31
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toshimitsu Obonai , Hironobu Takahashi , Yasuharu Hosaka , Masahiro Watanabe , Takuya Handa , Yukinori Shima , Takashi Hamochi
IPC分类号： H01L29/786 , H01L21/336 , H01L29/66 , H01L21/02 , H01L21/67
摘要： Provided is a semiconductor device with favorable electrical characteristics. Provided is a semiconductor device with stable electrical characteristics. Provided is a manufacturing method of a semiconductor device with a high yield. The manufacturing method includes a first step of forming an insulating film over a substrate, a second step of transferring the substrate in an atmospheric atmosphere, a third step of heating the insulating film, and a fourth step of forming a metal oxide film. The third step and the fourth step are successively performed in an atmosphere where water vapor partial pressure is lower than water vapor partial pressure in the atmospheric air.

2. 发明授权

US09601634B2 Semiconductor device 有权
公开(公告)号：US09601634B2
公开(公告)日：2017-03-21
申请号：US14556769
申请日：2014-12-01
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Masahiro Katayama , Chieko Misawa , Yuka Yokoyama , Hironobu Takahashi , Kenichi Okazaki
IPC分类号： H01L29/10 , H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1225 , H01L29/66969 , H01L29/78606
摘要： A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.

3. 发明授权

US10101867B2 Display device and operation method thereof 有权
公开(公告)号：US10101867B2
公开(公告)日：2018-10-16
申请号：US15922238
申请日：2018-03-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kengo Akimoto , Hironobu Takahashi , Yuki Okamoto , Isamu Shigemori
IPC分类号： G06F3/044 , G09G3/36 , G09G3/3233 , G06F3/041 , H01L27/32
摘要： A flexible display device with high viewability is provided. The display device includes a first substrate, a second substrate, a first element layer, and a second element layer. The first element layer is positioned between the first substrate and the second substrate. The second element layer is positioned between the first substrate and the second substrate. The first element layer and the second element layer overlap with each other in a region. The first substrate and the second substrate have flexibility. The first element layer includes a display element and a first circuit. The display element is electrically connected to the first circuit. The second element layer includes a sensor element. The sensor element has a function of sensing distortion.

4. 发明授权

US09881954B2 Imaging device 有权
公开(公告)号：US09881954B2
公开(公告)日：2018-01-30
申请号：US14731954
申请日：2015-06-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hironobu Takahashi , Yukinori Shima , Kengo Akimoto , Junichi Koezuka , Naoto Kusumoto
IPC分类号： H01L27/146 , H01L29/786 , H01L27/12
CPC分类号： H01L27/14616 , H01L27/1225 , H01L27/14632 , H01L27/14663
摘要： An imaging device with high imaging quality capable of being manufactured at low cost is provided. The imaging device includes a first transistor, a second transistor, a third transistor, a fourth transistor, a photodiode, and a capacitor. Each of the first to the fourth transistors includes a first gate electrode and a second gate electrode, and the second gate electrode of each of the first to the fourth transistors and one electrode of the capacitor are electrically connected to an anode electrode of the photodiode.

5. 发明申请

US20150301636A1 Display Device and Operation Method Thereof 有权
标题翻译：显示设备及其操作方法
公开(公告)号：US20150301636A1
公开(公告)日：2015-10-22
申请号：US14686109
申请日：2015-04-14
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kengo Akimoto , Hironobu Takahashi , Yuki Okamoto , Isamu Shigemori
IPC分类号： G06F3/041
CPC分类号： G06F3/044 , G06F3/0418 , G06F2203/04102 , G06F2203/04103 , G09G3/3233 , G09G3/3648 , G09G2320/029 , G09G2330/12 , G09G2380/02 , H01L27/3225 , H01L27/323 , H01L27/3262 , H01L2251/5338
摘要： A flexible display device with high viewability is provided. The display device includes a first substrate, a second substrate, a first element layer, and a second element layer. The first element layer is positioned between the first substrate and the second substrate. The second element layer is positioned between the first substrate and the second substrate. The first element layer and the second element layer overlap with each other in a region. The first substrate and the second substrate have flexibility. The first element layer includes a display element and a first circuit. The display element is electrically connected to the first circuit. The second element layer includes a sensor element. The sensor element has a function of sensing distortion.
摘要翻译：提供了具有高可视性的柔性显示装置。显示装置包括第一基板，第二基板，第一元件层和第二元件层。第一元件层位于第一基板和第二基板之间。第二元件层位于第一基板和第二基板之间。第一元件层和第二元件层在一个区域中彼此重叠。第一基板和第二基板具有柔性。第一元件层包括显示元件和第一电路。显示元件电连接到第一电路。第二元件层包括传感器元件。传感器元件具有检测失真的功能。

6. 发明授权

US09035301B2 Imaging device 有权
标题翻译：成像设备
公开(公告)号：US09035301B2
公开(公告)日：2015-05-19
申请号：US14303629
申请日：2014-06-13
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Hironobu Takahashi , Yukinori Shima , Yasuharu Hosaka , Toshimitsu Obonai , Masashi Tsubuku
IPC分类号： H01L29/22 , H01L27/146 , H01L29/786
CPC分类号： H01L27/14663 , H01L27/14616 , H01L27/14625 , H01L27/14692 , H01L29/42384 , H01L29/4908 , H01L29/7869 , H04N5/3745
摘要： An imaging device that is highly stable to irradiation with radial rays such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device takes an image with radial rays such as X-rays and includes pixel circuits arranged in a matrix and a scintillator overlapping the pixel circuits. The pixel circuits each includes a switching transistor with an extremely small off-state current and a light-receiving element which is configured to convert the radial rays to electrical charges. A gate insulating film of the switching transistor has a stacked structure including a silicon nitride film with a thickness of 100 nm to 400 nm and a silicon oxide film or a silicon oxynitride film with a thickness of 5 nm to 20 nm.
摘要翻译：提供了对X射线等径向射线照射高度稳定的成像装置，能够抑制电特性的降低。成像装置拍摄具有诸如X射线的径向射线的图像，并且包括以矩阵布置的像素电路和与像素电路重叠的闪烁体。像素电路各自包括非常小的截止电流的开关晶体管和被配置为将径向射线转换成电荷的光接收元件。开关晶体管的栅极绝缘膜具有包括厚度为100nm至400nm的氮化硅膜和厚度为5nm至20nm的氧化硅膜或氮氧化硅膜的叠层结构。

7. 发明授权

US10103274B2 Semiconductor device 有权
公开(公告)号：US10103274B2
公开(公告)日：2018-10-16
申请号：US15462229
申请日：2017-03-17
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Masahiro Katayama , Chieko Misawa , Yuka Yokoyama , Hironobu Takahashi , Kenichi Okazaki
IPC分类号： H01L29/10 , H01L29/786 , H01L29/66 , G02F1/1368 , H01L27/12
摘要： A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.

8. 发明授权

US09952724B2 Display device and operation method thereof 有权
公开(公告)号：US09952724B2
公开(公告)日：2018-04-24
申请号：US14686109
申请日：2015-04-14
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kengo Akimoto , Hironobu Takahashi , Yuki Okamoto , Isamu Shigemori
IPC分类号： G06F3/044 , G06F3/041 , G09G3/3233 , G09G3/36 , H01L27/32
CPC分类号： G06F3/044 , G06F3/0418 , G06F2203/04102 , G06F2203/04103 , G09G3/3233 , G09G3/3648 , G09G2320/029 , G09G2330/12 , G09G2380/02 , H01L27/3225 , H01L27/323 , H01L27/3262 , H01L2251/5338
摘要： A flexible display device with high viewability is provided. The display device includes a first substrate, a second substrate, a first element layer, and a second element layer. The first element layer is positioned between the first substrate and the second substrate. The second element layer is positioned between the first substrate and the second substrate. The first element layer and the second element layer overlap with each other in a region. The first substrate and the second substrate have flexibility. The first element layer includes a display element and a first circuit. The display element is electrically connected to the first circuit. The second element layer includes a sensor element. The sensor element has a function of sensing distortion.

9. 发明授权

US09360564B2 Imaging device 有权
标题翻译：成像设备
公开(公告)号：US09360564B2
公开(公告)日：2016-06-07
申请号：US14467161
申请日：2014-08-25
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kengo Akimoto , Junichi Koezuka , Hironobu Takahashi
IPC分类号： A61B6/00 , H01L27/146 , G01T1/20
CPC分类号： G01T1/2018 , A61B6/4208 , H01L27/14663
摘要： To provide an imaging device that is highly stable when exposed to radiation such as X-rays. The imaging device includes a substrate, a pixel circuit, and a scintillator which are stacked in order. The pixel circuit includes a light-receiving element and a circuit portion electrically connected to the light-receiving element. The substrate is provided with a heater. A transistor in the pixel circuit is heated by the passage of a current through the heater at times other than imaging, thus, degradation of the electrical characteristics of the transistor due to X-ray irradiation can be recovered.
摘要翻译：提供当暴露于诸如X射线的辐射时高度稳定的成像装置。成像装置包括依次层叠的基板，像素电路和闪烁体。像素电路包括光接收元件和电连接到光接收元件的电路部分。基板设有加热器。像素电路中的晶体管通过在成像之外的时间通过加热器的电流而被加热，因此可以恢复由于X射线照射引起的晶体管的电特性的劣化。

10. 发明授权

US09341722B2 Imaging device 有权
标题翻译：成像设备
公开(公告)号：US09341722B2
公开(公告)日：2016-05-17
申请号：US14187909
申请日：2014-02-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Kengo Akimoto , Hironobu Takahashi , Hiroshi Kanemura , Akiharu Miyanaga
IPC分类号： G01T1/20 , G01T1/202
CPC分类号： G01T1/2018
摘要： An imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device obtains an image using radiations such as X-rays and includes pixel circuits which are arranged in a matrix and which a scintillator overlaps. Each of the pixel circuits includes a switching transistor whose off-state current is extremely low and a light-receiving element. A shielding layer formed using a metal material and the like overlaps the transistor and the light-receiving element. With the structure, an imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics can be provided.
摘要翻译：提供了一种对诸如X射线的辐射照射高度稳定并且可以抑制电特性降低的成像装置。成像装置使用诸如X射线的辐射获得图像，并且包括排列成矩阵并且闪烁体重叠的像素电路。每个像素电路包括截止电流极低的开关晶体管和光接收元件。使用金属材料等形成的屏蔽层与晶体管和光接收元件重叠。通过该结构，可以提供对X射线等照射进行照射高度稳定并能够抑制电特性降低的成像装置。

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