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1. 发明申请

US20040198028A1 Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US20040198028A1
公开(公告)日：2004-10-07
申请号：US10815813
申请日：2004-04-02
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Koichiro Tanaka , Hidekazu Miyairi , Hironobu Shoji
IPC分类号： H01L021/00 , H01L021/36 , B23K026/067
CPC分类号： H01L21/02686 , B23K26/0604 , B23K26/0608 , B23K26/0624 , B23K26/0732 , B23K26/0736 , B23K26/0853 , B23K2101/40 , H01L21/2026
摘要： Crystallization by irradiation of laser light forms a plurality of convex portions (ridges) on the surface of a crystalline semiconductor film that is obtained, which decreases a film quality. A method of laser irradiation comprises the steps of: overlapping an area which is irradiated with a first laser beam of a pulsed oscillation having a wavelength of equal to or shorter than that of visible light with an area which is irradiated with a second laser beam of a pulsed oscillation having a longer wavelength than that of the first laser beam; and irradiating a subject to be irradiated with the first laser beam and the second laser beam while synchronizing the pulsed oscillation of the first laser beam with that of the second laser beam, and moving the subject to be irradiated, and the first laser beam and the second laser beam relatively each other.
摘要翻译：通过照射激光进行结晶，在获得的结晶半导体膜的表面上形成多个凸部（凸脊），这降低了膜质量。一种激光照射方法包括以下步骤：将具有等于或短于可见光的波长的脉冲振荡的第一激光束照射的区域与照射第二激光束的区域重叠具有比第一激光束长的波长的脉冲振荡; 并且在使第一激光束的脉冲振荡与第二激光束的脉冲振荡同步的同时照射第一激光束和第二激光束照射的被摄体，并且移动要照射的被摄体，并且第一激光束和第二激光束相对彼此。

2. 发明申请

US20040266147A1 Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device 有权
标题翻译：薄膜晶体管的制造方法及半导体装置的制造方法
公开(公告)号：US20040266147A1
公开(公告)日：2004-12-30
申请号：US10878388
申请日：2004-06-29
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Akihisa Shimomura , Hideto Ohnuma , Hironobu Shoji
IPC分类号： H01L029/76
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02672 , H01L21/2022 , H01L21/268 , H01L21/3221 , H01L27/1277 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film. In the present invention, when Ni element (Ni) is used as the metal element and a silicon-based film (referred to as a silicon film) is used as the semiconductor film, nickel silicide segregates in the ridge formed in the silicon film by irradiating the pulsed laser light. Next, etching solution of hydrofluoric acid based etchant is used to remove the nickel silicide segregated in the ridge. When the surface of the semiconductor film is rough after removing the metal element by means of etching, the laser light may be irradiated to the semiconductor film under the insert atmosphere to flatten the surface thereof.
摘要翻译：本发明的目的是提供一种从半导体膜去除金属元素的方法，该方法与用于从半导体膜去除金属元素的常规吸杂步骤不同。在本发明中，当使用Ni元素（Ni）作为金属元素，并且使用硅系膜（称为硅膜）作为半导体膜时，硅化镍在硅膜中形成的隆起中分离，照射脉冲激光。接下来，使用基于氢氟酸的蚀刻剂的蚀刻溶液来除去在脊中分离的硅化镍。当通过蚀刻去除金属元素之后半导体膜的表面粗糙时，可以在插入气氛下将激光照射到半导体膜上以使其表面变平。

3. 发明申请

US20040266079A1 Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device 有权
标题翻译：激光照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US20040266079A1
公开(公告)日：2004-12-30
申请号：US10871376
申请日：2004-06-21
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Akihisa Shimomura , Hironobu Shoji
IPC分类号： H01L021/00 , G02F001/35 , C30B001/00 , G21G004/00 , H01L021/324
CPC分类号： H01L21/02683 , B23K26/0732 , B23K26/0738 , G21K5/04 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L27/3244 , H01L51/0037 , H01L51/0059 , H01L51/0062 , H01L51/0078 , H01L51/0081
摘要： When the laser light having the harmonic is used for crystallizing the semiconductor film, there is a problem that the energy conversion efficiency from the fundamental wave to the harmonic is low. And since the laser light converted into the harmonic has lower energy than the fundamental wave, it is difficult to enhance the throughput by enlarging the area of the beam spot. The present invention provides a laser irradiation apparatus emitting the fundamental wave simultaneously with the wavelength not longer than that of the fundamental wave, typically the harmonic converted from the fundamental wave, wherein the laser light emitted from one resonator having the fundamental wave and the wavelength not longer than that of the fundamental wave are irradiated without being separated.
摘要翻译：当具有谐波的激光用于使半导体膜结晶时，存在从基波到谐波的能量转换效率低的问题。并且，由于转换为谐波的激光具有比基波更低的能量，因此难以通过扩大光斑的面积而提高吞吐量。本发明提供了一种激光照射装置，其发射的基波波长不同于基波的波长，通常是从基波转换的谐波，其中从具有基波的一个谐振器发射的激光和波长不是比基波长的时间长，不分离。

4. 发明申请

US20040259387A1 Laser irradiation apparatus and method of fabricating semiconductor device 失效
标题翻译：激光照射装置及半导体装置的制造方法
公开(公告)号：US20040259387A1
公开(公告)日：2004-12-23
申请号：US10700516
申请日：2003-11-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
IPC分类号： H01L021/00 , H01L021/324 , H01L021/477 , H01L021/84
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/123 , B23K26/127 , H01L21/2026 , H01L21/268 , H01L29/66757
摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.
摘要翻译：根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光，有效地防止了氧和氮混入半导体膜。因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

5. 发明申请

US20040214411A1 Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus 有权
标题翻译：半导体器件，半导体器件和激光照射设备的制造方法
公开(公告)号：US20040214411A1
公开(公告)日：2004-10-28
申请号：US10701174
申请日：2003-11-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji
IPC分类号： C30B001/00 , H01L021/20 , H01L021/36
CPC分类号： H01L21/02686 , C30B1/023 , C30B1/08 , C30B29/06 , H01L21/02683 , H01L21/2026
摘要： It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity in the semiconductor film and the unevenness of the state of the surface thereof. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the laser irradiation apparatus which can suppress the variation of on-current, mobility, and threshold of TFT, and to further provide a semiconductor device manufactured with the manufacturing method. A method for manufacturing a semiconductor device comprising the steps of adding the first noble gas to the semiconductor film formed over the insulating surface with the ion doping method and irradiating the semiconductor film with the first noble gas added therein with the laser light in an atmosphere of second noble gas, wherein the magnetic field is applied to the semiconductor film with the first noble gas added when the laser light is irradiated.
摘要翻译：本发明的目的是提供一种激光照射装置，其能够在抑制半导体膜中的结晶性的变化和其表面状态的不均匀性的同时使半导体膜均匀结晶。本发明的另一个目的是提供一种使用能够抑制TFT的导通电流，迁移率和阈值的变化的激光照射装置的半导体器件的制造方法，并且进一步提供利用制造制造的半导体器件方法。一种制造半导体器件的方法，包括以下步骤：用离子掺杂方法将第一稀有气体添加到形成在绝缘表面上的半导体膜上，并且在其中加入第一稀有气体的激光照射半导体膜，第二惰性气体，其中当照射激光时，在加入了第一稀有气体的情况下将磁场施加到半导体膜。

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