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1. 发明授权

US08198697B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08198697B2
公开(公告)日：2012-06-12
申请号：US12816487
申请日：2010-06-16
申请人： Seiji Momota , Hitoshi Abe , Takeshi Fujii
发明人： Seiji Momota , Hitoshi Abe , Takeshi Fujii
IPC分类号： H01L31/058
CPC分类号： H01L29/7395 , H01L29/0696 , H01L29/7397 , H01L29/866
摘要： An IGBT is disclosed which separated into two groups (first and second IGBT portions). First and second Zener diodes each composed of series-connected Zener diode parts are disposed so as to correspond to the groups respectively. Each of the first and second Zener diodes has an anode side connected to a corresponding one of first and second polysilicon gate wirings, and a cathode side connected to an emitter electrode. Temperature dependence of a forward voltage drop of each of first and second Zener diodes is used for reducing a gate voltage of a group rising in temperature to throttle a current flowing in the group and reduce the temperature of the group to thereby attain equalization of the temperature distribution in a surface of a chip. In this manner, it is possible to provide an MOS type semiconductor device in which equalization of the temperature distribution in a surface of a chip or among chips can be attained.
摘要翻译：公开了分为两组（第一和第二IGBT部分）的IGBT。分别由串联连接的齐纳二极管部件构成的第一和第二齐纳二极管分别对应于组。第一和第二齐纳二极管中的每一个具有连接到第一和第二多晶硅栅极布线中的相应一个的阳极侧，以及连接到发射极的阴极侧。使用第一和第二齐纳二极管每个的正向压降的温度依赖性来降低温度上升的组的栅极电压，以节流在该组中流动的电流并降低该组的温度从而达到温度的均衡分布在芯片的表面。以这种方式，可以提供一种其中可以获得芯片表面或芯片之间的温度分布的均衡的MOS型半导体器件。

2. 发明申请

US20110012195A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110012195A1
公开(公告)日：2011-01-20
申请号：US12865330
申请日：2009-01-28
申请人： Seiji Momota , Hitoshi Abe , Takashi Shiigi , Takeshi Fujii , Koh Yoshikawa , Tetsutaro Imagawa , Masaki Koyama , Makoto Asai
发明人： Seiji Momota , Hitoshi Abe , Takashi Shiigi , Takeshi Fujii , Koh Yoshikawa , Tetsutaro Imagawa , Masaki Koyama , Makoto Asai
IPC分类号： H01L27/11
CPC分类号： H01L27/0629 , H01L27/0658 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/4236 , H01L29/7395 , H01L29/7397 , H01L29/7815 , H01L29/7827
摘要： Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).
摘要翻译：在主装置（24）的源电极（25）和电流检测装置（21）的电流检测电极（22）之间连接用于检测电流的电阻器。栅极绝缘体（36）的介电耐受电压大于电阻器和流过电流检测装置（21）的反向偏压的最大电流的乘积。主装置（24）的p体区域（32）的扩散长度短于电流检测装置（21）的p体（31）的扩散长度。主装置（24）的p体区域（32）的端部的曲率半径比电流检测装置（21）的p体（31）的曲率半径小。结果，在逆偏压下，主装置（24）的p体区域（32）的端部的电场变得比电流检测装置的p体区域（31）的电场强 21）。因此，主装置24中的雪崩击穿比电流检测装置（21）更容易发生。

3. 发明授权

US09466711B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09466711B2
公开(公告)日：2016-10-11
申请号：US12865330
申请日：2009-01-28
申请人： Seiji Momota , Hitoshi Abe , Takashi Shiigi , Takeshi Fujii , Koh Yoshikawa , Tetsutaro Imagawa , Masaki Koyama , Makoto Asai
发明人： Seiji Momota , Hitoshi Abe , Takashi Shiigi , Takeshi Fujii , Koh Yoshikawa , Tetsutaro Imagawa , Masaki Koyama , Makoto Asai
IPC分类号： H01L29/78 , H01L29/96 , H01L29/739 , H01L29/08 , H01L29/10 , H01L29/423
CPC分类号： H01L27/0629 , H01L27/0658 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/4236 , H01L29/7395 , H01L29/7397 , H01L29/7815 , H01L29/7827
摘要： Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).
摘要翻译：在主装置（24）的源电极（25）和电流检测装置（21）的电流检测电极（22）之间连接用于检测电流的电阻器。栅极绝缘体（36）的介电耐受电压大于电阻器和流过电流检测装置（21）的反向偏压的最大电流的乘积。主装置（24）的p体区域（32）的扩散长度短于电流检测装置（21）的p体（31）的扩散长度。主装置（24）的p体区域（32）的端部的曲率半径比电流检测装置（21）的p体（31）的曲率半径小。结果，在逆偏压下，主装置（24）的p体区域（32）的端部的电场变得比电流检测装置的p体区域（31）的电场强 21）。因此，主装置24中的雪崩击穿比电流检测装置（21）更容易发生。

4. 发明授权

US08253222B2 Semiconductor device and fabrication method of semiconductor device 有权
标题翻译：半导体器件的半导体器件及其制造方法
公开(公告)号：US08253222B2
公开(公告)日：2012-08-28
申请号：US13027792
申请日：2011-02-15
申请人： Seiji Momota , Takeshi Fujii , Satoshi Kamijima , Makoto Asai
发明人： Seiji Momota , Takeshi Fujii , Satoshi Kamijima , Makoto Asai
IPC分类号： H01L29/41
CPC分类号： H01L29/7802 , H01L29/41766 , H01L29/66348 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.
摘要翻译：半导体器件包括第一导电类型的第一半导体区域; 第二导电类型的第二半导体区域，设置在第一半导体区域的表面上，杂质浓度高于第一半导体区域; 穿过第二半导体区域到达第一半导体区域的沟槽; 经由绝缘膜设置在所述沟槽内的第一电极; 在所述第二半导体区域的表面层中设置为比所述第一电极的上端深的第一凹部，以与所述沟槽接触; 以及嵌入在第一凹部中的第二电极。

5. 发明申请

US20110204485A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20110204485A1
公开(公告)日：2011-08-25
申请号：US13027792
申请日：2011-02-15
申请人： Seiji Momota , Takeshi Fujii , Satoshi Kamijima , Makoto Asai
发明人： Seiji Momota , Takeshi Fujii , Satoshi Kamijima , Makoto Asai
IPC分类号： H01L29/41 , H01L21/76
CPC分类号： H01L29/7802 , H01L29/41766 , H01L29/66348 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.
摘要翻译：半导体器件包括第一导电类型的第一半导体区域; 第二导电类型的第二半导体区域，设置在第一半导体区域的表面上，杂质浓度高于第一半导体区域; 穿过第二半导体区域到达第一半导体区域的沟槽; 经由绝缘膜设置在所述沟槽内的第一电极; 在所述第二半导体区域的表面层中设置为比所述第一电极的上端深的第一凹部，以与所述沟槽接触; 以及嵌入在第一凹部中的第二电极。

6. 发明授权

US08691635B2 Fabrication method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08691635B2
公开(公告)日：2014-04-08
申请号：US13557674
申请日：2012-07-25
申请人： Seiji Momota , Takeshi Fujii , Satoshi Kamijima , Makoto Asai
发明人： Seiji Momota , Takeshi Fujii , Satoshi Kamijima , Makoto Asai
IPC分类号： H01L29/417 , H01L29/66 , H01L29/739 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/41766 , H01L29/66348 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.
摘要翻译：半导体器件包括第一导电类型的第一半导体区域; 第二导电类型的第二半导体区域，设置在第一半导体区域的表面上，杂质浓度高于第一半导体区域; 穿过第二半导体区域到达第一半导体区域的沟槽; 经由绝缘膜设置在所述沟槽内的第一电极; 在所述第二半导体区域的表面层中设置为比所述第一电极的上端深的第一凹部，以与所述沟槽接触; 以及嵌入在第一凹部中的第二电极。

7. 发明申请

US20120289012A1 FABRICATION METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120289012A1
公开(公告)日：2012-11-15
申请号：US13557674
申请日：2012-07-25
申请人： Seiji Momota , Takeshi Fujii , Satoshi Kamijima , Makoto Asai
发明人： Seiji Momota , Takeshi Fujii , Satoshi Kamijima , Makoto Asai
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/41766 , H01L29/66348 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.
摘要翻译：半导体器件包括第一导电类型的第一半导体区域; 第二导电类型的第二半导体区域，设置在第一半导体区域的表面上，杂质浓度高于第一半导体区域; 穿过第二半导体区域到达第一半导体区域的沟槽; 经由绝缘膜设置在所述沟槽内的第一电极; 在所述第二半导体区域的表面层中设置为比所述第一电极的上端深的第一凹部，以与所述沟槽接触; 以及嵌入在第一凹部中的第二电极。

8. 发明授权

US09221991B2 Copolymer, aqueous coating composition containing copolymer, and method for forming multilayer coating film 有权
标题翻译：共聚物，含有共聚物的水性涂料组合物和形成多层涂膜的方法
公开(公告)号：US09221991B2
公开(公告)日：2015-12-29
申请号：US13500939
申请日：2010-09-08
申请人： Takeshi Fujii
发明人： Takeshi Fujii
IPC分类号： C09D175/04 , C09D151/06 , C09D7/00 , C09D5/38 , C09D5/44 , C09D5/29 , C09D133/08 , C08F265/04 , C08F226/10 , C08F220/28 , C08F220/56 , C08G18/08 , C08G18/81 , C08G18/62 , B05D7/00 , C08L33/06 , C08L51/06 , C08L67/02
CPC分类号： C09D133/08 , B05D7/532 , B05D7/572 , C08F220/28 , C08F220/56 , C08F226/10 , C08F265/04 , C08G18/0866 , C08G18/6229 , C08G18/8116 , C08L33/064 , C08L33/066 , C08L51/06 , C08L67/02 , C09D5/29 , C09D5/38 , C09D5/4457 , C09D7/43 , C09D151/06 , C09D175/04 , Y10T428/31725 , Y10T428/31931 , Y10T428/31935
摘要： An object of the present invention is to provide a copolymer having the characteristic of developing high viscosity, and lowering its viscosity with an increase in rate of shear, particularly a copolymer having the characteristic of developing viscosity, and lowering its viscosity with an increase in rate of shear even in an aqueous coating composition that contains a surfactant. The present invention provides a copolymer obtainable by copolymerization of a monomer component (m) that includes: (m-1), a macromonomer having (i) a backbone that comprises a polymer chain having a number average molecular weight of 1,000 to 10,000 obtainable by polymerizing a monomer component (I) that contains 5 to 100 mass % of a C4-C24 alkyl-containing polymerizable unsaturated monomer (a), and (ii) a polymerizable unsaturated group; and (m-2) a polymerizable unsaturated monomer containing a hydrophilic group.
摘要翻译：本发明的目的是提供一种具有高粘度发展特性的共聚物，随着剪切速率的增加而降低其粘度，特别是具有粘度发展特性的共聚物，随着速率的增加而降低其粘度即使在含有表面活性剂的水性涂料组合物中也是如此。本发明提供了一种可通过共聚单体组分（m）得到的共聚物，其包括：（m-1），大分子单体，其具有（i）主链，其包含数均分子量为1,000〜10,000的聚合物链，聚合含有5〜100质量％的含C 4〜C 24烷基的聚合性不饱和单体（a）的单体成分（I）和（ii）聚合性不饱和基团; 和（m-2）含有亲水基团的可聚合不饱和单体。

9. 发明授权

US09139740B2 Flow modifier for water-based coating material and water-based coating composition containing same 有权
标题翻译：水性涂料和含有它的水性涂料组合物的流变改性剂
公开(公告)号：US09139740B2
公开(公告)日：2015-09-22
申请号：US13203781
申请日：2010-03-03
申请人： Takeshi Fujii
发明人： Takeshi Fujii
IPC分类号： C08F265/00 , C09D5/02 , C08F265/10 , C08F283/04 , C08F283/06 , C09D7/00 , C08L33/26
CPC分类号： C09D5/024 , C08F265/10 , C08F283/04 , C08F283/06 , C08L33/26 , C09D7/43 , C08F220/00
摘要： An object of the present invention is to provide a graft copolymer that is usable as various functional materials, that is stimulus responsive, and that is soluble in water at ordinary temperatures; and to provide an aqueous coating composition that comprises the graft copolymer as a thickener. The present invention also provides a rheology modifier for an aqueous coating composition comprising a graft copolymer consisting of (A) a main chain comprising an N-substituted (meth)acrylamide compound and having a lower critical solution temperature in water of 40° C. or higher, and (B) a hydrophobic side chain.
摘要翻译：本发明的目的是提供一种可用作各种功能材料的接枝共聚物，其是刺激反应性的，并且在常温下可溶于水; 并提供包含作为增稠剂的接枝共聚物的水性涂料组合物。本发明还提供一种水性涂料组合物的流变改性剂，其包含接枝共聚物，该接枝共聚物由（A）包含N-取代的（甲基）丙烯酰胺化合物的主链和在40℃的水中具有较低的临界溶解温度或（B）疏水性侧链。

10. 发明授权

US08771796B2 Coating film formation method 有权
标题翻译：涂膜形成方法
公开(公告)号：US08771796B2
公开(公告)日：2014-07-08
申请号：US13819833
申请日：2011-08-09
申请人： Takeshi Fujii
发明人： Takeshi Fujii
IPC分类号： B05D3/02 , C09D151/06 , C09D133/26 , B05D7/00 , C08F291/08 , B05D3/10 , C08F265/06 , C08F291/12 , C08F265/04
CPC分类号： B05D3/108 , B05D3/0209 , B05D3/0254 , B05D7/532 , C08F8/00 , C08F265/04 , C08F265/06 , C08F290/046 , C08F291/08 , C08F291/12 , C09D133/26 , C09D151/003 , C09D151/06 , Y10T428/31855 , C08F220/56 , C08F220/28 , C08F220/18 , C08F220/06 , C08F212/08
摘要： An object of the present invention is to provide a method for forming a coating film that is capable of forming a coating film having excellent smoothness, distinctness of image and luster using an aqueous coating composition. The present invention provides a method for forming a coating film comprising: Step (1): forming an uncured coating film by applying to a substrate an aqueous coating composition that contains a copolymer of monomer components comprising one or more N-substituted (meth)acrylamide compounds, the copolymer being a graft copolymer comprising (A) a main chain having a lower critical solution temperature T1 in water within the range of 30 to 95° C., and (B) at least one hydrophobic side chain; Step (2): preheating the uncured coating film formed in Step (1) under heating conditions such that a preheating temperature T2 falls within the range of 60 to 100° C., and the preheating temperature T2 and the lower critical solution temperature T1 have a relationship represented by the formula T2−T1=−30 to 30° C.; and Step (3): curing the uncured coating film formed in Step (2) by heating.
摘要翻译：本发明的目的是提供一种形成涂膜的方法，该方法能够使用水性涂料组合物形成具有优异的平滑性，图像和光泽的明显性的涂膜。本发明提供一种形成涂膜的方法，其包括：步骤（1）：通过向基材施加含有包含一种或多种N-取代的（甲基）丙烯酰胺的单体组分的共聚物的水性涂料组合物，形成未固化的涂膜化合物，该共聚物是接枝共聚物，其包含（A）在30至95℃的水中具有较低的临界溶液温度T1的主链和（B）至少一个疏水性侧链; 步骤（2）：在预热温度T2落在60〜100℃的范围的加热条件下预热工序（1）中形成的未固化的涂膜，预热温度T2和下临界溶解温度T1 由式T2-T1 = -30〜30℃表示的关系。和步骤（3）：通过加热固化步骤（2）中形成的未固化的涂膜。

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