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1. 发明授权

US07142569B2 Tunable laser source and wavelength selection method thereof 有权
标题翻译：可调谐激光源及其波长选择方法
公开(公告)号：US07142569B2
公开(公告)日：2006-11-28
申请号：US10818723
申请日：2004-04-06
申请人： Sean Chang , Chia-chi Wu
发明人： Sean Chang , Chia-chi Wu
IPC分类号： H01S3/10 , H01S3/08
CPC分类号： H01S5/141 , H01S5/005 , H01S5/143
摘要： A tunable laser source includes a gain chip, a collimating lens, a grating, a focusing lens and a wavelength selection device. The grating is positioned to be impinged by the collimated light to provide diffracted beams at different diffraction angles whose wavelengths disperse in accordance with the diffraction angles. Those diffracted beams are then brought to separate focal points on the wavelength selection device through the focusing lens. The wavelength selection device includes a light shield with a single slit formed thereon and a mirror. The single silt allows the mirror to reflect only one diffracted beam back to the gain chip so as to maintain the oscillation of the tunable laser source at the wavelength corresponding to the diffraction angle of the only one focused diffracted beam.
摘要翻译：可调激光源包括增益芯片，准直透镜，光栅，聚焦透镜和波长选择装置。光栅定位成被准直光照射，以提供不同衍射角的衍射光束，其波长根据衍射角分散。那些衍射光束然后通过聚焦透镜被带到波长选择装置上的分离焦点。波长选择装置包括其上形成有单个狭缝的光屏蔽和反射镜。单个淤泥允许反射镜仅将一个衍射光束反射回增益芯片，以便将可调激光源的振荡保持在对应于仅一个聚焦衍射光束的衍射角的波长处。

2. 发明授权

US09659769B1 Tensile dielectric films using UV curing 有权
公开(公告)号：US09659769B1
公开(公告)日：2017-05-23
申请号：US10972084
申请日：2004-10-22
申请人： Bhadri Varadarajan , Sean Chang , James S. Sims , Guangquan Lu , David Mordo , Kevin Ilcisin , Mandar Pandit , Michael Carris
发明人： Bhadri Varadarajan , Sean Chang , James S. Sims , Guangquan Lu , David Mordo , Kevin Ilcisin , Mandar Pandit , Michael Carris
IPC分类号： H01L21/31 , H01L21/02 , H01L21/3105 , H01L21/477 , H01L21/26
CPC分类号： H01L21/02348 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/26 , H01L21/3105 , H01L21/477
摘要： A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. UV curing of as-deposited PECVD silicon nitride films, for example, has been shown to produce films with stresses of at least 1.65 E10 dynes/cm2. Other dielectric capping layer film materials show similar results. In transistor implementations, the stress from a source/drain region capping layer composed of such a film is uniaxially transferred to the NMOS channel through the source-drain regions to create tensile strain in the NMOS channel.

3. 发明申请

US20130330926A1 DEPOSITING TUNGSTEN INTO HIGH ASPECT RATIO FEATURES 有权
标题翻译：沉积在高比例特征中
公开(公告)号：US20130330926A1
公开(公告)日：2013-12-12
申请号：US13888077
申请日：2013-05-06
申请人： Anand Chandrashekar , Raashina Humayun , Michal Danek , Aaron R. Fellis , Sean Chang
发明人： Anand Chandrashekar , Raashina Humayun , Michal Danek , Aaron R. Fellis , Sean Chang
IPC分类号： H01L21/48
CPC分类号： H01L21/486 , H01L21/28556 , H01L21/32136 , H01L21/76865 , H01L21/76877
摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.
摘要翻译：提供了以基本上无空隙的方式用含钨材料填充高纵横比特征的方法和装置。在某些实施方案中，该方法包括沉积含钨材料的初始层，然后选择性地去除初始层的一部分以形成沿着高纵横比特征的深度差异钝化的剩余层。在某些实施例中，剩余层在特征开口附近比在特征内更加钝化。该方法可以继续在剩余层上沉积相同或其它材料的附加层。由于剩余层的差分钝化，在该后续沉积操作期间的沉积速率在特征开口附近比在特征内部的沉积速率更慢。这种沉积变化又可以有助于防止特征的过早闭合并且有助于以基本无空隙的方式填充特征。

4. 发明授权

US08460403B2 Method of storing iron disulfide (FeS2) particles 有权
标题翻译：二硫化铁（FeS2）颗粒的储存方法
公开(公告)号：US08460403B2
公开(公告)日：2013-06-11
申请号：US11982509
申请日：2007-11-02
申请人： Michael Pozin , Sean Chang
发明人： Michael Pozin , Sean Chang
IPC分类号： H01M4/58
CPC分类号： H01M4/58 , H01M2/1235 , H01M4/0471 , H01M4/1397 , H01M4/364 , H01M4/581 , H01M4/5815 , H01M4/587 , H01M4/621 , H01M4/622 , H01M4/625 , H01M6/16 , H01M10/0587 , H01M2004/028 , Y10T29/49108 , Y10T29/49115
摘要： A primary cell having an anode comprising lithium and a cathode comprising iron disulfide (FeS2) and carbon particles. The electrolyte comprises a lithium salt dissolved in a solvent mixture. Iron disulfide powder and carbon black is preferably premixed and stored. A cathode slurry is prepared comprising iron disulfide, carbon black, binder, and a liquid solvent. The mixture is coated onto a substrate and solvent evaporated leaving a dry cathode coating on the substrate. The cathode coating is then baked at elevated temperatures in atmosphere under partial vacuum or in an atmosphere of nitrogen or inert gas. The anode and cathode can be spirally wound with separator therebetween and inserted into the cell casing with electrolyte then added.
摘要翻译：具有包含锂的阳极的主电池和包含二硫化铁（FeS 2）和碳颗粒的阴极。电解质包含溶解在溶剂混合物中的锂盐。二硫化铁粉末和炭黑优选预混合并储存。制备包含二硫化铁，炭黑，粘合剂和液体溶剂的阴极浆料。将混合物涂覆在基材上并蒸发溶剂，在基材上留下干燥的阴极涂层。然后将阴极涂层在高温下在大气中在部分真空下或在氮气或惰性气体的气氛中进行烘烤。阳极和阴极可以用分离器螺旋卷绕并插入电池壳体中，然后加入电解质。

5. 发明申请

US20120009785A1 Depositing Tungsten Into High Aspect Ratio Features 有权
标题翻译：将钨沉积到高宽比特征中
公开(公告)号：US20120009785A1
公开(公告)日：2012-01-12
申请号：US12833823
申请日：2010-07-09
申请人： Anand Chandrashekar , Raashina Humayun , Michal Danek , Aaron R. Fellis , Sean Chang
发明人： Anand Chandrashekar , Raashina Humayun , Michal Danek , Aaron R. Fellis , Sean Chang
IPC分类号： H01L21/768 , C23F1/08
CPC分类号： C23F4/00 , C23C16/045 , C23C16/06 , H01L21/76877
摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 250° C. and/or less than about 5 Torr.
摘要翻译：提供了用含钨材料填充高纵横比特征的方法和装置。该方法包括提供部分制造的半导体衬底并且在衬底表面上沉积含钨层以部分填充一个或多个高纵横比特征。该方法继续选择性地去除沉积层的一部分，使得在特征开口附近更多的材料在特征内部被移除。在某些实施方案中，可以在质量传输限制条件下进行移除，在特征内可用蚀刻剂较少，而不是靠近其开口。在引入处理室之前和/或在室内时，蚀刻剂物质被激活。在具体实施方案中，活化物质的重组在除去期间基本上受到限制和/或控制，例如在小于约250℃和/或小于约5托下进行操作。

6. 发明授权

US07594239B2 Magnetic actuator 有权
标题翻译：磁力执行机构
公开(公告)号：US07594239B2
公开(公告)日：2009-09-22
申请号：US11153549
申请日：2005-06-16
申请人： Chii-How Chang , Sean Chang
发明人： Chii-How Chang , Sean Chang
IPC分类号： G11B17/03
CPC分类号： H01F7/066 , H01F7/122
摘要： A magnetic actuator. The magnetic actuator comprises a first magnet, a second magnet, a first yoke, and a first coil. The second magnet is arranged axially with respect to the first magnet with repulsion therebetween. The first yoke is disposed between the first magnet and the second magnet, and the magnetic field lines produced by the first magnet and the second magnet extend from the first yoke. The first coil surrounds and corresponds to the first yoke. When a current is occurred in the first coil, the magnetic force generated between the first magnet and the second magnet will actuates the first coil to move axially with respect to the first and second magnets.
摘要翻译：磁力驱动器。磁致动器包括第一磁体，第二磁体，第一磁轭和第一线圈。第二磁体相对于第一磁体轴向布置，在它们之间具有排斥力。第一磁轭设置在第一磁体和第二磁体之间，由第一磁体和第二磁体产生的磁场线从第一磁轭延伸。第一线圈围绕并对应于第一轭。当在第一线圈中发生电流时，在第一磁体和第二磁体之间产生的磁力将致动第一线圈相对于第一和第二磁体轴向移动。

7. 发明授权

US07455466B2 Magnetic actuator for adjusting an iris diaphragm in an optical device 有权
标题翻译：用于调整光学装置中的光圈的磁致动器
公开(公告)号：US07455466B2
公开(公告)日：2008-11-25
申请号：US11194566
申请日：2005-08-02
申请人： Chii-How Chang , Sean Chang
发明人： Chii-How Chang , Sean Chang
IPC分类号： G03B9/02 , G03B9/08
CPC分类号： H02K41/0358 , H01F7/066
摘要： A magnetic actuator. A yoke comprises a first opening and a second opening, a frame, and a path. A first magnet is disposed in the first opening in the vicinity of the frame. A second magnet is disposed in the second opening in the vicinity of the frame. A coil comprises a wire surrounding the path. A light shield is connected to an end of the coil. When current passes through the coil, the coil moves along the path by magnetic induction between the first magnet and the second magnet such that the iris diaphragm is adjustable by the light shield.
摘要翻译：磁力驱动器。轭包括第一开口和第二开口，框架和路径。第一磁体设置在框架附近的第一开口中。第二磁体设置在框架附近的第二开口中。线圈包括围绕路径的线。灯罩连接到线圈的一端。当电流通过线圈时，线圈通过磁感应在第一磁体和第二磁体之间沿着路径移动，使得光圈可以通过光屏来调节。

8. 发明申请

US20080213104A1 Motor 审中-公开
标题翻译：发动机
公开(公告)号：US20080213104A1
公开(公告)日：2008-09-04
申请号：US12081185
申请日：2008-04-11
申请人： Lee-Long Chen , Shih-Ming Huang , Sean Chang , Wen-Shi Huang
发明人： Lee-Long Chen , Shih-Ming Huang , Sean Chang , Wen-Shi Huang
IPC分类号： F04B17/00
CPC分类号： F04D29/051 , F04D25/062 , F16C17/08 , F16C39/063 , F16C2360/46 , H02K7/09 , H02K7/14
摘要： A motor includes a stator, a rotor, a top magnetic structure, and a bottom magnetic structure. The stator is disposed in a frame. The rotor is also disposed in the frame, corresponding to the stator. The rotor includes a shaft extending axially from the rotor. The bottom magnetic structure is at the bottom of the frame. The top magnetic structure is on the top of the frame. The top and bottom magnetic structures are opposite to each other in an axial direction. Magnetic attraction generated between the first magnetic structure and the shaft, and the second magnetic structure and the shaft positions the shaft therebetween such that the first magnetic structure, the second magnetic structure, and the shaft are coaxially aligned.
摘要翻译：电动机包括定子，转子，顶部磁性结构和底部磁性结构。定子设置在框架中。转子也布置在框架中，对应于定子。转子包括从转子轴向延伸的轴。底部磁性结构位于框架的底部。顶部磁性结构位于框架的顶部。顶部和底部磁性结构在轴向方向上彼此相对。在第一磁性结构和轴之间产生的磁吸力，并且第二磁性结构和轴将轴定位在其间，使得第一磁性结构，第二磁性结构和轴同轴对准。

9. 发明申请

US20080118215A1 Light tunnel structure and manufacturing method thereof 审中-公开
标题翻译：轻隧道结构及其制造方法
公开(公告)号：US20080118215A1
公开(公告)日：2008-05-22
申请号：US11976420
申请日：2007-10-24
申请人： Yu-Chuan Chen , Sean Chang
发明人： Yu-Chuan Chen , Sean Chang
IPC分类号： G02B6/00 , B29C65/54
CPC分类号： G02B6/0096
摘要： A light tunnel structure includes a plurality of plates and an adhesive (a bonding glue). The plates are connected to each other to form a light tunnel with at least one gap formed at each of the junctions. The adhesive (bonding glue) is filled within the gaps at the junctions. In addition, a manufacturing method of the light tunnel structure is disclosed.
摘要翻译：光通道结构包括多个板和粘合剂（粘结胶）。板彼此连接以形成在每个连接处形成有至少一个间隙的光通道。粘合剂（粘合胶）填充在接合处的间隙内。此外，还公开了一种光通道结构的制造方法。

10. 发明申请

US20070273955A1 Optical projection system and smooth picture device thereof 有权
标题翻译：光学投影系统及其平滑图像装置
公开(公告)号：US20070273955A1
公开(公告)日：2007-11-29
申请号：US11640207
申请日：2006-12-18
申请人： Sean Chang , Hung-Kuang Yang
发明人： Sean Chang , Hung-Kuang Yang
IPC分类号： G02B26/00
CPC分类号： G02B26/10 , H04N9/315
摘要： A smooth picture device includes an optical element, a holder, a flexible member, a base and an actuator. The holder supports the optical element. At least one portion of the holder is coupled to the flexible member. The base supports the flexible member. The actuator is coupled to the holder and actuates the holder to vibrate.
摘要翻译：平滑的图像装置包括光学元件，保持器，柔性构件，基座和致动器。支架支撑光学元件。保持器的至少一部分联接到柔性构件。基座支撑柔性构件。致动器联接到保持器并致动保持器以进行振动。

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