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1. 发明授权

US08119429B2 Method for fabricating nitride semiconductor laser device and nitride semiconductor laser device 失效
标题翻译：氮化物半导体激光器件和氮化物半导体激光器件的制造方法
公开(公告)号：US08119429B2
公开(公告)日：2012-02-21
申请号：US11953459
申请日：2007-12-10
申请人： Satoshi Tamura , Hiroshi Ohno , Norio Ikedo , Masao Kawaguchi
发明人： Satoshi Tamura , Hiroshi Ohno , Norio Ikedo , Masao Kawaguchi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/2009 , H01S5/221 , H01S5/2223 , H01S5/3063 , H01S5/3201 , H01S5/34333
摘要： A p-type GaN guiding layer, an n-type GaN layer, and an n-type AlGaN current blocking layer are sequentially formed over an active layer, and then part of the current blocking layer is etched by using an alkali solution and irradiating the part with light to form an opening. Thereafter, a second p-type GaN guiding layer is formed on the current blocking layer to cover the opening. In this structure, the GaN layer has a smaller energy gap than the AlGaN current blocking layer.
摘要翻译：在有源层上顺序形成p型GaN引导层，n型GaN层和n型AlGaN电流阻挡层，然后使用碱溶液蚀刻一部分电流阻挡层，并照射部分与光形成一个开口。此后，在电流阻挡层上形成第二p型GaN引导层以覆盖开口。在该结构中，GaN层具有比AlGaN电流阻挡层更小的能隙。

2. 发明申请

US20070195843A1 Nitride semiconductor laser device and method for fabricating the same 审中-公开
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：US20070195843A1
公开(公告)日：2007-08-23
申请号：US11637690
申请日：2006-12-13
申请人： Satoshi Tamura , Norio Ikedo
发明人： Satoshi Tamura , Norio Ikedo
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2009 , H01S5/2202 , H01S5/2222 , H01S5/2227 , H01S2304/12
摘要： A nitride semiconductor laser device has a buried type structure including an active layer sandwiched between an n-type cladding layer and a p-type cladding layer; and a current blocking layer having an opening for confining a current flowing to the active layer. In the buried type structure, a regrown layer made of a nitride semiconductor layer including In (such as an InGaN layer or an AlInGaN layer) and doped with a p-type impurity is formed on the current blocking layer so as to cover the opening of the current blocking layer.
摘要翻译：氮化物半导体激光器件具有包括夹在n型包覆层和p型覆层之间的有源层的掩埋型结构; 以及具有用于限制流向有源层的电流的开口的电流阻挡层。在掩埋型结构中，在电流阻挡层上形成由包含In（例如InGaN层或AlInGaN层）并掺杂有p型杂质的氮化物半导体层形成的再生长层，以覆盖当前阻挡层。

3. 发明授权

US07613218B2 Self-pulsation nitride semiconductor laser device and method for fabricating the same 有权
标题翻译：自脉冲氮化物半导体激光器件及其制造方法
公开(公告)号：US07613218B2
公开(公告)日：2009-11-03
申请号：US11637739
申请日：2006-12-13
申请人： Satoshi Tamura , Norio Ikedo
发明人： Satoshi Tamura , Norio Ikedo
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0658 , H01S5/2009 , H01S5/221 , H01S5/34333 , H01S2304/00
摘要： In a buried type structure including an active layer sandwiched between an n-type cladding layer and a p-type cladding layer and a current blocking layer having an opening for confining a current flowing to the active layer, a regrown layer made of a nitride semiconductor doped with a p-type impurity is formed on the current blocking layer so as to cover the opening of the current blocking layer, and a portion of the regrown layer buried in the opening disposed to be adjacent to a side face of the opening and having a given width W is changed to have the n-type conductivity. Accordingly, the opening of the current blocking layer is effectively narrowed, so as to realize a self-pulsation nitride semiconductor laser device.
摘要翻译：在包括夹在n型包覆层和p型包覆层之间的有源层的掩埋型结构和具有用于限制流向有源层的电流的开口的电流阻挡层的情况下，由氮化物半导体在电流阻挡层上形成掺杂有p型杂质的电极，以覆盖电流阻挡层的开口，并且覆盖在开口中的再生长层的一部分设置成与开口的侧面相邻并具有给定宽度W被改变为具有n型导电性。因此，电流阻挡层的开口被有效地变窄，从而实现自脉动氮化物半导体激光器件。

4. 发明授权

US07320898B2 Semiconductor laser device and method for fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07320898B2
公开(公告)日：2008-01-22
申请号：US11154547
申请日：2005-06-17
申请人： Satoshi Tamura , Norio Ikedo
发明人： Satoshi Tamura , Norio Ikedo
IPC分类号： H01L21/00 , H01L29/06
CPC分类号： B82Y20/00 , H01L2224/48091 , H01S5/2081 , H01S5/2202 , H01S5/222 , H01S5/34333 , H01L2924/00014
摘要： A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of a first conductivity type; a multilayer film formed on the first semiconductor layer and having a groove; and a second semiconductor layer formed on the multilayer film to fill the groove and made of a nitride semiconductor of the first conductivity type. The multilayer film is composed of a plurality of thin films containing a nitride semiconductor of a second conductivity type, and one of the thin films formed as the uppermost film is made of gallium nitride.
摘要翻译：本发明的半导体激光器件包括：形成在基板上的有源层; 形成在有源层上并由第一导电类型的氮化物半导体制成的第一半导体层; 形成在所述第一半导体层上并具有凹槽的多层膜; 以及第二半导体层，形成在所述多层膜上以填充所述沟槽并由所述第一导电类型的氮化物半导体制成。多层膜由含有第二导电型的氮化物半导体的多个薄膜构成，作为最上面的膜形成的一个薄膜由氮化镓构成。

5. 发明申请

US20050279993A1 Semiconductor laser device and method for fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20050279993A1
公开(公告)日：2005-12-22
申请号：US11154547
申请日：2005-06-17
申请人： Satoshi Tamura , Norio Ikedo
发明人： Satoshi Tamura , Norio Ikedo
IPC分类号： H01L29/06 , H01S5/20 , H01S5/22 , H01S5/343
CPC分类号： B82Y20/00 , H01L2224/48091 , H01S5/2081 , H01S5/2202 , H01S5/222 , H01S5/34333 , H01L2924/00014
摘要： A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of a first conductivity type; a multilayer film formed on the first semiconductor layer and having a groove; and a second semiconductor layer formed on the multilayer film to fill the groove and made of a nitride semiconductor of the first conductivity type. The multilayer film is composed of a plurality of thin films containing a nitride semiconductor of a second conductivity type, and one of the thin films formed as the uppermost film is made of gallium nitride.
摘要翻译：本发明的半导体激光器件包括：形成在基板上的有源层; 形成在有源层上并由第一导电类型的氮化物半导体制成的第一半导体层; 形成在所述第一半导体层上并具有凹槽的多层膜; 以及第二半导体层，形成在所述多层膜上以填充所述沟槽并由所述第一导电类型的氮化物半导体制成。多层膜由含有第二导电型的氮化物半导体的多个薄膜构成，作为最上面的膜形成的一个薄膜由氮化镓构成。

6. 发明授权

US07720124B2 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07720124B2
公开(公告)日：2010-05-18
申请号：US11363944
申请日：2006-03-01
申请人： Satoshi Tamura , Norio Ikedo
发明人： Satoshi Tamura , Norio Ikedo
IPC分类号： H01S5/00
CPC分类号： H01L33/32 , H01L33/025 , H01S5/2081 , H01S5/305 , H01S5/3054 , H01S5/32341
摘要： A semiconductor device includes a first nitride semiconductor layer formed on a substrate and a second nitride semiconductor layer formed on the first nitride semiconductor layer so as to be in contact with the first nitride semiconductor layer. The first nitride semiconductor layer contains a p-type impurity. The second nitride semiconductor layer contains an n-type impurity and a p-type impurity. In the second nitride semiconductor layer, the concentration of the n-type impurity is higher than the concentration of the p-type impurity.
摘要翻译：半导体器件包括形成在衬底上的第一氮化物半导体层和形成在第一氮化物半导体层上以与第一氮化物半导体层接触的第二氮化物半导体层。第一氮化物半导体层含有p型杂质。第二氮化物半导体层含有n型杂质和p型杂质。在第二氮化物半导体层中，n型杂质的浓度高于p型杂质的浓度。

7. 发明申请

US20070274358A1 Self-pulsation nitride semiconductor laser device and method for fabricating the same 有权
标题翻译：自脉冲氮化物半导体激光器件及其制造方法
公开(公告)号：US20070274358A1
公开(公告)日：2007-11-29
申请号：US11637739
申请日：2006-12-13
申请人： Satoshi Tamura , Norio Ikedo
发明人： Satoshi Tamura , Norio Ikedo
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0658 , H01S5/2009 , H01S5/221 , H01S5/34333 , H01S2304/00
摘要： In a buried type structure including an active layer sandwiched between an n-type cladding layer and a p-type cladding layer and a current blocking layer having an opening for confining a current flowing to the active layer, a regrown layer made of a nitride semiconductor doped with a p-type impurity is formed on the current blocking layer so as to cover the opening of the current blocking layer, and a portion of the regrown layer buried in the opening disposed to be adjacent to a side face of the opening and having a given width W is changed to have the n-type conductivity. Accordingly, the opening of the current blocking layer is effectively narrowed, so as to realize a self-pulsation nitride semiconductor laser device.
摘要翻译：在包括夹在n型包覆层和p型包覆层之间的有源层的掩埋型结构和具有用于限制流向有源层的电流的开口的电流阻挡层的情况下，由氮化物半导体在电流阻挡层上形成掺杂有p型杂质的电极，以覆盖电流阻挡层的开口，并且覆盖在开口中的再生长层的一部分设置成与开口的侧面相邻并具有给定宽度W被改变为具有n型导电性。因此，电流阻挡层的开口被有效地变窄，从而实现自脉动氮化物半导体激光器件。

8. 发明申请

US20060197104A1 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20060197104A1
公开(公告)日：2006-09-07
申请号：US11363944
申请日：2006-03-01
申请人： Satoshi Tamura , Norio Ikedo
发明人： Satoshi Tamura , Norio Ikedo
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/32 , H01L33/025 , H01S5/2081 , H01S5/305 , H01S5/3054 , H01S5/32341
摘要： A semiconductor device includes a first nitride semiconductor layer formed on a substrate and a second nitride semiconductor layer formed on the first nitride semiconductor layer so as to be in contact with the first nitride semiconductor layer. The first nitride semiconductor layer contains a p-type impurity. The second nitride semiconductor layer contains an n-type impurity and a p-type impurity. In the second nitride semiconductor layer, the concentration of the n-type impurity is higher than the concentration of the p-type impurity.
摘要翻译：半导体器件包括形成在衬底上的第一氮化物半导体层和形成在第一氮化物半导体层上以与第一氮化物半导体层接触的第二氮化物半导体层。第一氮化物半导体层含有p型杂质。第二氮化物半导体层含有n型杂质和p型杂质。在第二氮化物半导体层中，n型杂质的浓度高于p型杂质的浓度。

9. 发明授权

US09449761B2 Polypropylene for film capacitor, polypropylene sheet for film capacitor, method for producing the same, and uses of the same 有权
标题翻译：薄膜电容用聚丙烯，薄膜电容用聚丙烯片及其制造方法及其用途
公开(公告)号：US09449761B2
公开(公告)日：2016-09-20
申请号：US13256622
申请日：2010-03-17
申请人： Noriko Tan , Satoshi Tamura
发明人： Noriko Tan , Satoshi Tamura
IPC分类号： H01G4/18 , C08J3/28 , C08L23/12
CPC分类号： H01G4/18 , C08L23/12 , C08L2312/00 , C08L2312/06 , Y02T10/7022
摘要： A polypropylene for a film capacitor or a polypropylene sheet for a film capacitor which exhibits excellent stretchability when stretched into a film and provides a film having high breakdown voltage and small thermal shrinkage ratio, and which is suitable for a polypropylene film for a film capacitor and a film capacitor comprising the film.The polypropylene for a film capacitor of the present invention is obtained by irradiating a propylene homopolymer with a radiation with an absorbed dose of 0.1 to 500 kGy, the propylene homopolymer having (1) a melt flow rate (MFR) within a range of 1 to 10 g/10 min as determined at 230° C. under a load of 2.16 kg in accordance with ASTM D1238, (2) an isotactic pentad fraction (mmmm fraction) of not less than 94% as determined using 13C-NMR, (3) an ash amount of not more than 30 ppm as obtained by completely burning the propylene homopolymer in air, and (4) a chlorine amount of not more than 10 ppm as determined by ion chromatography.
摘要翻译：本发明的薄膜电容器用聚丙烯通过用吸收剂量为0.1〜500kGy的辐射照射丙烯均聚物，所述丙烯均聚物的熔融流动速率（MFR）为1〜（2）使用13 C-NMR测定的等于或小于94％的全同立构五单元组分数（mmmm分数），（3），（3）所示，在230℃，2.16kg负荷下，）通过在空气中完全燃烧丙烯均聚物得到的灰分量不大于30ppm，（4）通过离子色谱测定的氯量不大于10ppm。

10. 发明申请

US20130007496A1 INFORMATION PROCESSING APPARATUS AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：信息处理装置及其控制方法
公开(公告)号：US20130007496A1
公开(公告)日：2013-01-03
申请号：US13419145
申请日：2012-03-13
申请人： Satoshi Tamura
发明人： Satoshi Tamura
IPC分类号： G06F1/32
CPC分类号： G06F1/1677 , G06F1/3206 , G06F1/3234 , Y02D50/20
摘要： According to one embodiment, a method controls an apparatus including a sensor which detects an open/close state of a cover, and an power manager which performs power management of the apparatus in accordance with a ordinary state and a power-saving state. The method includes notifying turning on the apparatus in order to change the apparatus to the ordinary state, if the power manager is notified a second notifying and the sensor detects that the cover is opened, and performing an power management corresponding to the power-saving state, if the power manager is notified a first notifying, or if the power manager is notified the second notifying and the sensor detects that the cover is closed.
摘要翻译：根据一个实施例，一种方法控制包括检测盖的打开/关闭状态的传感器和根据普通状态和省电状态进行设备的电力管理的功率管理器的设备。该方法包括通知打开设备以便将设备改变到普通状态，如果电源管理器被通知第二个通知，并且传感器检测到盖被打开，并执行与省电状态相对应的电源管理如果电源管理器被通知第一次通知，或者电源管理器被通知第二个通知，并且传感器检测到盖被关闭。

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