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1. 发明授权

US06738709B2 Failure diagnostic system of evaporated fuel processing system 有权
标题翻译：蒸发燃料处理系统故障诊断系统
公开(公告)号：US06738709B2
公开(公告)日：2004-05-18
申请号：US10153637
申请日：2002-05-24
申请人： Kenji Saito , Satoshi Nagashima , Yoichiro Ando , Hidetsugu Kanao
发明人： Kenji Saito , Satoshi Nagashima , Yoichiro Ando , Hidetsugu Kanao
IPC分类号： G06F1900
CPC分类号： F02M25/0809
摘要： A failure diagnostic system reduces the internal pressure of a fuel tank to a predetermined negative pressure, seals off the fuel tank from the air, and then determines whether an evaporated fuel processing system has failed or not by monitoring an increase in pressure in the fuel tank. In determination, the failure diagnostic system compares a detected pressure in the fuel tank with a reference value that is increased by a predetermined rate. The failure diagnostic system stops update of the detected pressure if the detected pressure becomes higher than the reference value, and resumes update of the detected pressure if the detected pressure becomes lower than the reference value. It is therefore possible to accurately determine whether the evaporated fuel processing system has failed or not even if the pressure in the fuel tank is rapidly increased.
摘要翻译：故障诊断系统将燃料箱的内部压力降低到预定的负压，将燃料箱与空气密封，然后通过监视燃料箱中的压力增加来确定蒸发燃料处理系统是否发生故障。在确定时，故障诊断系统将检测到的燃料箱中的压力与以预定速率增加的参考值进行比较。如果检测到的压力高于参考值，则故障诊断系统停止检测到的压力的更新，并且如果检测到的压力变得低于参考值，则恢复检测到的压力的更新。因此，即使燃料箱中的压力快速增加，也可以精确地确定蒸发燃料处理系统是否发生故障。

2. 发明授权

US06651491B2 Failure diagnostic system of evaporated fuel processing system 有权
标题翻译：蒸发燃料处理系统故障诊断系统
公开(公告)号：US06651491B2
公开(公告)日：2003-11-25
申请号：US10153793
申请日：2002-05-24
申请人： Kenji Saito , Satoshi Nagashima , Yoichiro Ando , Hidetsugu Kanao
发明人： Kenji Saito , Satoshi Nagashima , Yoichiro Ando , Hidetsugu Kanao
IPC分类号： G01L326
CPC分类号： F02M25/0809 , F02M25/0836
摘要： There is provided a failure diagnostic system of an evaporated fuel processing system, which comprises a first failure diagnostic device that shuts off an evaporated fuel purge passage connecting a fuel tank and an engine intake passage from the air and determines whether there is any leakage from a large hole by monitoring the degree of increase in pressure in the fuel tank in which engine intake negative pressure is introduced; and a second failure diagnostic device that reduces a pressure the fuel tank to a predetermined negative pressure and seals off the fuel tank from the air to carry out failure diagnosis as to whether there is any leakage from a small hole by monitoring the degree of increase in pressure in the fuel tank. An operating range of the second failure diagnostic device is set to substantially include an operating range of the first failure diagnostic device and to be extended from the operating range of the first failure diagnostic device to include a lower intake negative pressure range.
摘要翻译：提供了一种蒸发燃料处理系统的故障诊断系统，其包括第一故障诊断装置，其关闭从空气连接燃料箱和发动机进气通道的蒸发燃料吹扫通道，并确定是否存在来自通过监测引入发动机进气负压的燃料箱中的压力增加程度来监测大孔; 以及第二故障诊断装置，其将燃料箱的压力减小到预定的负压，并且将燃料箱与空气密封，以通过监视来自小孔的泄漏程度进行故障诊断燃油箱内的压力。第二故障诊断装置的操作范围被设定为基本上包括第一故障诊断装置的操作范围，并且从第一故障诊断装置的操作范围延伸到包括较低的进气负压范围。

3. 发明授权

US06880380B2 Failure diagnostic apparatus and method for air-fuel ratio detecting device 失效
标题翻译：空燃比检测装置故障诊断装置及方法
公开(公告)号：US06880380B2
公开(公告)日：2005-04-19
申请号：US10326998
申请日：2002-12-24
申请人： Satoshi Nagashima , Kenji Saito , Hidetsugu Kanao
发明人： Satoshi Nagashima , Kenji Saito , Hidetsugu Kanao
IPC分类号： F02D45/00 , F01N3/20 , F01N3/24 , F01N3/28 , F01N13/02 , F02D37/02 , F02D41/14 , F02D41/22 , G01N33/00 , G01N33/497 , G01N7/00
CPC分类号： F01N3/101 , F01N3/20 , F01N3/28 , F01N13/009 , F01N13/0093 , F02D37/02 , F02D41/1441 , F02D41/1454 , F02D41/1474 , F02D41/1495 , F02D41/187 , F02D41/222 , F02D2041/2027 , F02D2041/228 , F02D2200/0404 , F02D2200/0414 , G01N33/0004 , Y02T10/22 , Y02T10/40
摘要： A failure diagnostic apparatus for an air-fuel ratio detecting device has an exhaust emission purifying device provided in an exhaust passage; an air-fuel ratio detecting unit for detecting the air-fuel ratio of an exhaust gas from the purifying device; a first determination unit for determining that the air-fuel ratio is estimated to be rich for longer than a first predetermined period of time; a second determination unit for determining that the air-fuel ratio is estimated to be lean for longer than a second predetermined period of time; and a failure diagnosis device for determining that the air-fuel ratio detecting device has failed if a variation in the air-fuel ratio, calculated based on the detected air-fuel ratios until both the first and second determination units make the determinations, is equal to or less than a predetermined value.
摘要翻译：空燃比检测装置的故障诊断装置具有设置在排气通路内的排气净化装置，用于检测来自净化装置的废气的空燃比的空燃比检测单元; 第一确定单元，用于确定所述空燃比被估计为富于长于第一预定时间段; 第二确定单元，用于确定空燃比被估计为比第二预定时间长; 以及故障诊断装置，用于如果基于检测到的空燃比而计算的空燃比的变化直到第一和第二确定单元进行确定，则确定空燃比检测装置已经失败。达到或小于预定值。

4. 发明授权

US06754611B2 Failure diagnostic system for atmospheric pressure detecting device 有权
标题翻译：大气压力检测装置故障诊断系统
公开(公告)号：US06754611B2
公开(公告)日：2004-06-22
申请号：US10322738
申请日：2002-12-19
申请人： Satoshi Nagashima , Kenji Saito , Hidetugu Kanao
发明人： Satoshi Nagashima , Kenji Saito , Hidetugu Kanao
IPC分类号： G06F1130
CPC分类号： F02D41/222 , F02D41/185 , F02D2041/228 , F02D2200/0404 , F02D2200/0414 , F02D2200/703 , F02D2200/704 , G01L23/24 , Y02T10/40
摘要： There is provided a failure diagnostic system for an atmospheric pressure detecting device, which is capable of rationally determining whether that device has failed or not and is capable of improving the diagnostic accuracy. The failure diagnostic system is comprised of an atmospheric pressure sensor for detecting an atmospheric pressure of the air taken into an engine; a condition determination section for determining that conditions required for determining that the atmospheric pressure sensor has failed are satisfied if the number of operations, in each of which the engine continuously operates for a predetermined period of time, has exceeded a predetermined number; and a failure diagnosis section for determining that the atmospheric pressure sensor has failed if a variation in the atmospheric pressure over a period of time equivalent to that predetermined number is equal to or less than a predetermined value and the required conditions have been satisfied.
摘要翻译：提供了一种用于大气压检测装置的故障诊断系统，其能够合理地确定该装置是否已经发生故障并且能够提高诊断精度。该故障诊断系统包括用于检测进入发动机的空气的大气压力的大气压力传感器; 如果发动机连续运行预定时间段的操作次数已经超过预定数量，则满足用于确定确定大气压传感器已经发生故障所需的条件的条件确定部分; 以及故障诊断部，用于如果大于等于该预定值的时间段内的大气压力的变化等于或小于预定值并且满足所需条件，则确定大气压传感器已经失败。

5. 发明授权

US08541830B1 Nonvolatile semiconductor memory device and method for manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08541830B1
公开(公告)日：2013-09-24
申请号：US13601468
申请日：2012-08-31
申请人： Satoshi Nagashima , Fumitaka Arai , Hisataka Meguro
发明人： Satoshi Nagashima , Fumitaka Arai , Hisataka Meguro
IPC分类号： H01L29/788 , H01L21/336 , G11C11/34
CPC分类号： H01L27/088 , H01L21/28273 , H01L27/11524 , H01L27/11551 , H01L29/788 , H01L29/7881
摘要： A nonvolatile semiconductor memory device according to an embodiment includes a plurality of cell array layers, each cell array layer including: a plurality of semiconductor layers that extends in a first direction; gate insulating layers; a plurality of floating gates arranged in the first direction; inter-gate insulating layers; and a plurality of control gates that extends in a second direction intersecting semiconductor layers, and faces the floating gates via the inter-gate insulating layers, in which, in the cell array layers adjacent each other in a stacking direction, the control gates of a lower cell array layer and the control gates of the an upper cell array layer are intersecting each other, and the floating gates within the lower cell array layer and the semiconductor layers within the upper cell array layer are aligned in position with each other.
摘要翻译：根据实施例的非易失性半导体存储器件包括多个单元阵列层，每个单元阵列层包括：沿第一方向延伸的多个半导体层; 栅绝缘层; 沿所述第一方向布置的多个浮动栅极; 栅极间绝缘层; 以及多个控制栅极，其在与半导体层交叉的第二方向上延伸，并且经由所述栅极间绝缘层面向所述浮置栅极，其中，在层叠方向上彼此相邻的所述单元阵列层中，所述控制栅极下单元阵列层和上单元阵列层的控制栅极彼此相交，并且下单元阵列层内的浮置栅极和上单元阵列层内的半导体层彼此对准。

6. 发明申请

US20120126306A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：非易失性半导体存储器件的非易失性存储器件和制造方法
公开(公告)号：US20120126306A1
公开(公告)日：2012-05-24
申请号：US13238380
申请日：2011-09-21
申请人： Genki KAWAGUCHI , Fumitaka Arai , Satoshi Nagashima , Naoki Kai , Wataru Sakamoto , Hiroyuki Nitta
发明人： Genki KAWAGUCHI , Fumitaka Arai , Satoshi Nagashima , Naoki Kai , Wataru Sakamoto , Hiroyuki Nitta
IPC分类号： H01L29/788 , H01L21/28 , H01L29/792
CPC分类号： H01L27/11524 , H01L21/764 , H01L21/7682 , H01L27/11529 , H01L29/42376
摘要： According to one embodiment, a memory cell includes a charge storage layer. A first air gap is provided between charge storage layers adjacent in a word line direction. A second air gap is provided between charge storage layers adjacent in a bit line direction.
摘要翻译：根据一个实施例，存储单元包括电荷存储层。在字线方向相邻的电荷存储层之间设置第一气隙。在位线方向相邻的电荷存储层之间提供第二气隙。

7. 发明授权

US07868376B2 Semiconductor storage device and method for manufacturing the same 失效
公开(公告)号：US07868376B2
公开(公告)日：2011-01-11
申请号：US12354271
申请日：2009-01-15
申请人： Kenji Aoyama , Hisataka Meguro , Satoshi Nagashima
发明人： Kenji Aoyama , Hisataka Meguro , Satoshi Nagashima
IPC分类号： H01L29/792
CPC分类号： H01L21/28247 , H01L21/76229 , H01L27/11521 , H01L27/11524 , H01L27/11568
摘要： A semiconductor storage device has a plurality of word lines formed with a predetermined interval on a semiconductor substrate, a selection transistor provided at an end portion of the plurality of word lines, a first insulating film formed so as to cover side surfaces of the word lines, a side surface of the selection transistor, and a surface of the semiconductor substrate between the word lines, a high-permittivity film formed on the first insulation film, a second insulating film formed so as to cover the upper surface of the word lines and the selection transistor, a first air-gap portion located between the word lines and surrounded by the high-permittivity film and the second insulating film, and a second air-gap portion formed via the first insulating film and the high-permittivity film at a sidewall portion, which opposes the selection transistor, of the word line adjacent to the selection transistor, an upper portion of the second air-gap portion being covered by the second insulating film.

8. 发明申请

US20090218614A1 SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20090218614A1
公开(公告)日：2009-09-03
申请号：US12354271
申请日：2009-01-15
申请人： Kenji AOYAMA , Hisataka Meguro , Satoshi Nagashima
发明人： Kenji AOYAMA , Hisataka Meguro , Satoshi Nagashima
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L21/28247 , H01L21/76229 , H01L27/11521 , H01L27/11524 , H01L27/11568
摘要： A semiconductor storage device has a plurality of word lines formed with a predetermined interval on a semiconductor substrate, a selection transistor provided at an end portion of the plurality of word lines, a first insulating film formed so as to cover side surfaces of the word lines, a side surface of the selection transistor, and a surface of the semiconductor substrate between the word lines, a high-permittivity film formed on the first insulation film, a second insulating film formed so as to cover the upper surface of the word lines and the selection transistor, a first air-gap portion located between the word lines and surrounded by the high-permittivity film and the second insulating film, and a second air-gap portion formed via the first insulating film and the high-permittivity film at a sidewall portion, which opposes the selection transistor, of the word line adjacent to the selection transistor, an upper portion of the second air-gap portion being covered by the second insulating film.
摘要翻译：半导体存储装置具有在半导体衬底上形成有预定间隔的多个字线，设置在多个字线的端部的选择晶体管，形成为覆盖字线的侧面的第一绝缘膜所述选择晶体管的侧面以及所述字线之间的所述半导体基板的表面，形成在所述第一绝缘膜上的高电容率膜，形成为覆盖所述字线的上表面的第二绝缘膜，以及选择晶体管，位于字线之间并被高电容率膜和第二绝缘膜包围的第一气隙部分和经由第一绝缘膜和高介电常数膜形成的第二气隙部分，与选择晶体管相邻的字线相对的选择晶体管的侧壁部分，第二气隙部分的上部被第二i 记录膜。

9. 发明申请

US20090206391A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20090206391A1
公开(公告)日：2009-08-20
申请号：US12350658
申请日：2009-01-08
申请人： Kyoko ANDO , Satoshi Nagashima , Kenji Aoyama
发明人： Kyoko ANDO , Satoshi Nagashima , Kenji Aoyama
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/42324 , H01L21/76229 , H01L27/105 , H01L27/11526 , H01L27/11529 , H01L29/66825 , H01L29/7883
摘要： A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed on the semiconductor substrate at predetermined intervals, a selecting transistor arranged on each of two sides of each of the plurality of word lines in which a spacing between the selecting transistor and an adjacent one of the word lines is not less than three times a width of each of the word lines, an interlayer insulating film formed to cover upper surfaces of the word lines and selecting transistors, a first cavity portion which is located between each pair of adjacent ones of the word lines and whose upper portion is covered with the interlayer insulating film, a second cavity portion which is formed at a side wall portion of the word line adjacent to each selecting transistor which faces the selecting transistor and whose upper portion is covered with the interlayer insulating film, and a third cavity portion which is formed at a side wall portion of each of the selecting transistors and whose upper portion is covered with the interlayer insulating film.
摘要翻译：半导体存储器件具有半导体衬底，以预定间隔形成在半导体衬底上的多条字线，选择晶体管布置在多个字线中的每一个的两侧中，其中选择晶体管和字线的相邻一方的字线宽度不小于每条字线的宽度的三倍，形成为覆盖字线的上表面并选择晶体管的层间绝缘膜，第一空腔部分位于每对相邻的所述字线中的一个并且其上部被所述层间绝缘膜覆盖;第二空腔部分，形成在所述字线的与所述选择晶体管相对并且其上部被覆盖的相邻的字线的侧壁部分处层间绝缘膜和形成在每个选择晶体管的侧壁部分的第三空腔部分并且其上部被层间绝缘膜覆盖。

10. 发明授权

US4642075A Multiple sprocket wheel 失效
标题翻译：多链轮
公开(公告)号：US4642075A
公开(公告)日：1987-02-10
申请号：US741184
申请日：1985-06-04
申请人： Satoshi Nagashima
发明人： Satoshi Nagashima
IPC分类号： B62M9/10 , F16H55/30 , F16H55/12
CPC分类号： B62M9/105 , F16H55/30
摘要： A multiple sprocket wheel used as a unit in a two-wheeled vehicle and for a multi-speed gear without involving separation of a chain guard from a plurality of sprockets.
摘要翻译：用作两轮车辆中的单元的多个链轮和用于多速齿轮的多链轮，而不涉及将链条防护件与多个链轮分离。

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