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1. 发明申请

US20090236603A1 PROCESS FOR FORMING A WIRING FILM, A TRANSISTOR, AND AN ELECTRONIC DEVICE 审中-公开
标题翻译：形成布线，晶体管和电子设备的方法
公开(公告)号：US20090236603A1
公开(公告)日：2009-09-24
申请号：US12480150
申请日：2009-06-08
申请人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
发明人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
IPC分类号： H01L27/06 , H01L21/768 , H01L29/786 , H01L29/772 , H01L33/00 , C23C14/00
CPC分类号： H01L23/53238 , H01L21/2855 , H01L27/124 , H01L2924/0002 , H05K1/0306 , H05K3/16 , H05K3/388 , H01L2924/00
摘要： A wiring film having excellent adhesion and a low resistance is formed. A barrier film having copper as a main component and containing oxygen is formed on an object to form a film thereon by introducing an oxygen gas into a vacuum chamber in which the object to form a film thereon and sputtering a pure copper target. Then, after the introduction of the oxygen gas is stopped, a low-resistance film made of pure copper is formed by sputtering the pure copper target. Since the barrier film and the low-resistance film have copper as the main component, they can be patterned at a time. Since the low-resistance film has a resistance lower than that of the barrier film, the resistance of the entire wiring film is reduced. Since the barrier layer has high adhesion to glass and silicon, the entire wiring film has high adhesion.
摘要翻译：形成具有优异的粘附性和低电阻的布线膜。在物体上形成具有铜作为主要成分并含有氧的阻挡膜，以通过将氧气引入到其中形成膜的物体的真空室中并溅射纯铜靶来形成膜。然后，在停止引入氧气之后，通过溅射纯铜靶而形成由纯铜制成的低电阻膜。由于阻挡膜和低电阻膜具有铜作为主要成分，因此可以一次形成图案。由于低电阻膜的阻抗低于阻挡膜的电阻，因此整个布线膜的电阻降低。由于阻挡层对玻璃和硅具有高粘附性，因此整个布线膜具有高粘附性。

2. 发明授权

US08218122B2 Method for forming wiring film, transistor and electronic device 有权
标题翻译：形成布线膜，晶体管和电子器件的方法
公开(公告)号：US08218122B2
公开(公告)日：2012-07-10
申请号：US12475907
申请日：2009-06-01
申请人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
发明人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
IPC分类号： G02F1/13
CPC分类号： H01L23/53238 , H01L21/2855 , H01L23/53233 , H01L27/124 , H01L2924/0002 , H05K1/0306 , H05K3/16 , H05K3/388 , H01L2924/00
摘要： A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.
摘要翻译：形成具有优异的粘附性和阻隔性和低电阻值的布线膜。将氧气引入其中设置有被成膜物体的真空室中; 溅射靶在含有氧的真空环境中溅射; 并且在待成膜物体的表面上形成第一金属膜。第一溅射靶包括铜作为主要成分，以及选自由Mg，Al，Si，Be，Ca，Sr，Ba，Ra，Sc，Y，La，Ce组成的添加元素组中的至少一种添加元素， Pr，Nd，Pm，Sm，Eu，Gd，Tb和Dy。此后，在将氧气引入真空环境的状态下，通过溅射溅射靶溅射溅射靶，在第一金属膜的表面上形成第二金属膜，然后通过蚀刻第一金属膜形成布线膜和第二金属膜。

3. 发明申请

US20110233550A1 Method for producing a thin film transistor, and a thin film transistor 有权
标题翻译：薄膜晶体管的制造方法以及薄膜晶体管
公开(公告)号：US20110233550A1
公开(公告)日：2011-09-29
申请号：US13064858
申请日：2011-04-21
申请人： Satoru Takasawa , Satoru Ishibashi , Tadashi Masuda
发明人： Satoru Takasawa , Satoru Ishibashi , Tadashi Masuda
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66765 , C23C14/0036 , C23C14/185 , C23C14/5826 , H01L21/2855 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： Provided is a metallic wiring film which is not peeled away even when exposed to a hydrogen plasma. A metallic wiring film is constituted by an adhesion layer containing copper, Ca, and oxygen and a low-resistance metal layer (a layer of a copper alloy or pure copper) having a lower resistance than the adhesion layer. When the adhesion layer is composed of a copper alloy, which contains Ca and oxygen, and a source electrode film and a drain electrode film adhering to an ohmic contact layer are constituted by the adhesion layer, even if the adhesion layer is exposed to the hydrogen plasma, a Cu-containing oxide formed at an interface between the adhesion layer and the ohmic contact layer is not reduced, so that no peeling occurs between the adhesion layer and a silicon layer.
摘要翻译：提供即使暴露于氢等离子体也不会剥离的金属配线膜。金属布线膜由包含铜，Ca和氧的粘合层和具有比粘合层低的电阻的低电阻金属层（铜合金或纯铜的一层）构成。当粘合层由含有Ca和氧的铜合金构成，并且附着在欧姆接触层上的源电极膜和漏电极膜由粘合层构成时，即使粘附层暴露于氢等离子体，在粘合层和欧姆接触层之间的界面处形成的含Cu氧化物不会降低，使得粘附层和硅层之间不会发生剥离。

4. 发明申请

US20110068402A1 THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管及其生产薄膜晶体管的方法
公开(公告)号：US20110068402A1
公开(公告)日：2011-03-24
申请号：US12881641
申请日：2010-09-14
申请人： Satoru Takasawa , Satoru Ishibashi , Kyuzo Nakamura , Tadashi Masuda
发明人： Satoru Takasawa , Satoru Ishibashi , Kyuzo Nakamura , Tadashi Masuda
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L23/53238 , C23C14/0057 , C23C14/185 , H01L21/2855 , H01L21/76841 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： A metallic wiring film, which is not exfoliated even when exposed to a plasma of hydrogen, is provided. A metallic wiring film 20a is constituted by an adhesion layer 51 in which an additive metal is added to copper and a low-resistance metallic layer 52, which is made of pure copper, is disposed on the adhesion layer 51. When the additive metal made of at least one of Ti, Zr and Cr, and oxygen are included in a copper alloy which is in the adhesion layer 51 and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer 51 and the silicon layer even when being exposed to the hydrogen plasma, which prevents exfoliation from occurring between the adhesion layer 51 and the silicon layer. If the amount of additive metal increases, the adhesion layer 51 cannot be etched with an etching liquid for etching the low-resistance metallic layer 52, so that the maximum additional amount to permit the etching to be performed is the upper limit.
摘要翻译：提供即使暴露于氢等离子体时也不会剥离的金属布线膜。金属布线膜20a由在铜中添加添加金属的粘合层51和由纯铜制成的低电阻金属层52设置在粘合层51上。当添加金属制成的Ti，Zr和Cr中的至少一种，并且氧被包括在粘合层51中的铜合金中，并且源电极和漏电极由它形成，铜不会在粘合层 51和硅层，即使当暴露于氢等离子体时，其防止粘附层51和硅层之间发生剥离。如果添加金属的量增加，则不能用用于蚀刻低电阻金属层52的蚀刻液来蚀刻粘合层51，使得允许进行蚀刻的最大附加量为上限。

5. 发明授权

US08470651B2 Method for producing a thin film transistor, and a thin film transistor 有权
标题翻译：薄膜晶体管的制造方法以及薄膜晶体管
公开(公告)号：US08470651B2
公开(公告)日：2013-06-25
申请号：US13064858
申请日：2011-04-21
申请人： Satoru Takasawa , Satoru Ishibashi , Tadashi Masuda
发明人： Satoru Takasawa , Satoru Ishibashi , Tadashi Masuda
IPC分类号： H01L21/84
CPC分类号： H01L29/66765 , C23C14/0036 , C23C14/185 , C23C14/5826 , H01L21/2855 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： Provided is a metallic wiring film which is not peeled away even when exposed to a hydrogen plasma. A metallic wiring film is constituted by an adhesion layer containing copper, Ca, and oxygen and a low-resistance metal layer (a layer of a copper alloy or pure copper) having a lower resistance than the adhesion layer. When the adhesion layer is composed of a copper alloy, which contains Ca and oxygen, and a source electrode film and a drain electrode film adhering to an ohmic contact layer are constituted by the adhesion layer, even if the adhesion layer is exposed to the hydrogen plasma, a Cu-containing oxide formed at an interface between the adhesion layer and the ohmic contact layer is not reduced, so that no peeling occurs between the adhesion layer and a silicon layer.
摘要翻译：提供即使暴露于氢等离子体也不会剥离的金属配线膜。金属布线膜由包含铜，Ca和氧的粘合层和具有比粘合层低的电阻的低电阻金属层（铜合金或纯铜的一层）构成。当粘合层由含有Ca和氧的铜合金构成，并且附着在欧姆接触层上的源电极膜和漏电极膜由粘合层构成时，即使粘附层暴露于氢等离子体，在粘合层和欧姆接触层之间的界面处形成的含Cu氧化物不会降低，使得粘附层和硅层之间不会发生剥离。

6. 发明授权

US08299529B2 Method for producing thin film transistor and thin film transistor 有权
标题翻译：薄膜晶体管和薄膜晶体管的制造方法
公开(公告)号：US08299529B2
公开(公告)日：2012-10-30
申请号：US12881652
申请日：2010-09-14
申请人： Satoru Takasawa , Satoru Ishibashi , Tadashi Masuda
发明人： Satoru Takasawa , Satoru Ishibashi , Tadashi Masuda
IPC分类号： H01L27/01 , H01L21/00
CPC分类号： H01L23/53238 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.
摘要翻译：提供即使暴露于氢等离子体时也不会剥离的金属布线膜。金属布线膜由其中添加有Al的粘合层和设置在粘合层上并由纯铜制成的金属低电阻层构成。当包含Al和氧的铜合金包括在粘合层中并且由其形成源电极和漏电极时，即使当暴露于氢等离子体时，铜也不会在粘附层和硅层之间的界面处析出，其防止粘附层和硅层之间的剥离的发生。如果Al的量增加，由于粘合层和金属低电阻层的宽度在蚀刻之后大大不同，所以允许进行蚀刻的最大添加量是上限。

7. 发明授权

US08119462B2 Method for forming conductive film, thin-film transistor, panel with thin-film transistor, and method for manufacturing thin-film transistor 有权
标题翻译：用于形成导电膜的方法，薄膜晶体管，具有薄膜晶体管的面板以及制造薄膜晶体管的方法
公开(公告)号：US08119462B2
公开(公告)日：2012-02-21
申请号：US12364836
申请日：2009-02-03
申请人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
发明人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
IPC分类号： H01L21/00
CPC分类号： H01L29/41733 , C23C14/185 , C23C14/3407 , C23C14/5806 , H01L21/2855 , H01L21/76843 , H01L21/76877 , H01L23/53238 , H01L27/124 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film containing copper as a main component and additive metals, such as Ti or Zr, is formed. Such a conductive film has high adhesion to a silicon layer and a glass substrate and is hardly peeled off from the substrate. Furthermore, the specific resistance is low and the contact resistance to a transparent conductive film is also low. Thus, no deterioration in the electric characteristics occurs even when the conductive film is used for an electrode film. Accordingly, the conductive film formed by the present invention suited for TFT, and electrode films and barrier films of semiconductor elements, in particular.
摘要翻译：形成具有高粘附性和低电阻率的导电膜。在真空环境中溅射含有铜作为主要成分的靶，同时引入氧气，然后形成以铜为主要成分的导电膜和添加金属如Ti或Zr。这种导电膜对硅层和玻璃基板具有高粘附性，并且几乎不从基板剥离。此外，电阻率低，并且对透明导电膜的接触电阻也低。因此，即使将导电膜用于电极膜也不会发生电特性的劣化。因此，特别是适用于TFT的本发明形成的导电膜以及半导体元件的电极膜和阻挡膜。

8. 发明申请

US20090303406A1 METHOD FOR FORMING WIRING FILM, TRANSISTOR AND ELECTRONIC DEVICE 有权
标题翻译：形成布线，晶体管和电子器件的方法
公开(公告)号：US20090303406A1
公开(公告)日：2009-12-10
申请号：US12475907
申请日：2009-06-01
申请人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
发明人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
IPC分类号： G02F1/1343 , C23F1/00 , H01L29/78
CPC分类号： H01L23/53238 , H01L21/2855 , H01L23/53233 , H01L27/124 , H01L2924/0002 , H05K1/0306 , H05K3/16 , H05K3/388 , H01L2924/00
摘要： A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.
摘要翻译：形成具有优异的粘附性和阻隔性和低电阻值的布线膜。将氧气引入其中设置有被成膜物体的真空室中; 溅射靶在含有氧的真空环境中溅射; 并且在待成膜物体的表面上形成第一金属膜。第一溅射靶包括铜作为主要成分，以及选自由Mg，Al，Si，Be，Ca，Sr，Ba，Ra，Sc，Y，La，Ce组成的添加元素组中的至少一种添加元素， Pr，Nd，Pm，Sm，Eu，Gd，Tb和Dy。此后，在将氧气引入真空环境的状态下，通过溅射溅射靶溅射溅射靶，在第一金属膜的表面上形成第二金属膜，然后通过蚀刻第一金属膜形成布线膜和第二金属膜。

9. 发明授权

US08585872B2 Sputtering apparatus and film-forming processes 有权
标题翻译：溅射装置和成膜工艺
公开(公告)号：US08585872B2
公开(公告)日：2013-11-19
申请号：US12010585
申请日：2008-01-28
申请人： Satoru Takasawa , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi
发明人： Satoru Takasawa , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi
IPC分类号： C23C14/35
CPC分类号： C23C14/352 , C23C14/086 , C23C14/568 , H01J37/3266 , H01J37/32752 , H01J37/34 , H01J37/3408 , H01J37/347
摘要： A sputtering apparatus for ensuring high target utilization efficiency is provided. The sputtering apparatus 1 of the present invention comprises a moving means 28a, 28b so that first and second magnet members 23a, 23b can be moved by the moving means 28a, 28b in planes parallel to the surfaces of first and second targets 21a, 21b. When the first and second magnet members 23a, 23b move, magnetic field lines as well as deeply eroded regions on the surfaces of the first and second targets 21a, 21b also move, whereby large areas on the surfaces of the first and second targets 21a, 21b are sputtered.
摘要翻译：提供了一种用于确保高目标利用效率的溅射装置。本发明的溅射装置1包括移动装置28a，28b，使得第一和第二磁体构件23a，23b可以通过移动装置28a，28b在平行于第一和第二目标21a，21b的表面的平面中移动。当第一和第二磁体构件23a，23b移动时，第一和第二目标21a，21b的表面上的磁场线以及深蚀的区域也移动，从而第一和第二目标21a， 21b被溅射。

10. 发明申请

US20110298738A1 Touch panel 有权
标题翻译：触控面板
公开(公告)号：US20110298738A1
公开(公告)日：2011-12-08
申请号：US13137212
申请日：2011-07-28
申请人： Hirohisa Takahashi , Satoru Ishibashi , Noriaki Tani , Sadayuki Ukishima , Satoru Takasawa , Kyuzo Nakamura , Haruhiko Yamamoto
发明人： Hirohisa Takahashi , Satoru Ishibashi , Noriaki Tani , Sadayuki Ukishima , Satoru Takasawa , Kyuzo Nakamura , Haruhiko Yamamoto
IPC分类号： G06F3/041
CPC分类号： G06F3/045
摘要： A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken.
摘要翻译：提供了具有高耐久性的触摸面板。显示装置和柔性面板中的任一个或两者具有形成在电极层（上电极层，下电极层）的表面上的岛状保护体，并且在保护体之间露出透明导电膜。由于保护体从透明导电膜的表面突出高度突出，当按压柔性面板并使上部电极和下部电极层接触时，通过保护性使透明导电膜不破裂。

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