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1. 发明授权

US09034689B2 Non-volatile storage with metal oxide switching element and methods for fabricating the same 有权
标题翻译：具有金属氧化物开关元件的非易失性存储器及其制造方法
公开(公告)号：US09034689B2
公开(公告)日：2015-05-19
申请号：US13848603
申请日：2013-03-21
申请人： SanDisk 3D LLC
发明人： Deepak C. Sekar , Franz Kreupl , Peter Rabkin , Chu-Chen Fu
IPC分类号： H01L21/00 , H01L45/00 , G11C13/00 , H01L27/102 , H01L27/24
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/35 , G11C2213/71 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1641 , H01L45/1675
摘要： Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide.
摘要翻译：本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。可逆电阻率开关元件可以通过在顶部电极上沉积防氧扩散材料（例如，重掺杂的Si，W，WN）来形成。可以将陷阱钝化材料（例如，氟，氮，氢，氘）并入到可逆电阻率切换元件的底部电极，金属氧化物区域或顶部电极中的一个或多个中。一个实施例包括在金属氧化物和顶部电极之间具有双层覆盖层的可逆电阻率开关元件。制造该器件可以包括沉积（未反应的）钛并原位沉积二氧化钛而没有空气破裂。一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。

2. 发明授权

US08987046B2 Trap passivation in memory cell with metal oxide switching element 有权
标题翻译：在金属氧化物开关元件的存储单元中陷阱钝化
公开(公告)号：US08987046B2
公开(公告)日：2015-03-24
申请号：US13837917
申请日：2013-03-15
申请人： SanDisk 3D LLC
发明人： Deepak C. Sekar , Franz Kreupl , Raghuveer S. Makala , Peter Rabkin
IPC分类号： H01L21/00 , H01L45/00 , G11C13/00 , H01L27/102 , H01L27/24
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/35 , G11C2213/71 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1641 , H01L45/1675
摘要： Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide.
摘要翻译：本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。可逆电阻率开关元件可以通过在顶部电极上沉积防氧扩散材料（例如，重掺杂的Si，W，WN）来形成。可以将陷阱钝化材料（例如，氟，氮，氢，氘）并入到可逆电阻率切换元件的底部电极，金属氧化物区域或顶部电极中的一个或多个中。一个实施例包括在金属氧化物和顶部电极之间具有双层覆盖层的可逆电阻率开关元件。制造该器件可以包括沉积（未反应的）钛并原位沉积二氧化钛而没有空气破裂。一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。

3. 发明申请

US20130234099A1 NON-VOLATILE STORAGE WITH METAL OXIDE SWITCHING ELEMENT AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：具有金属氧化物切换元件的非挥发性储存及其制造方法
公开(公告)号：US20130234099A1
公开(公告)日：2013-09-12
申请号：US13848603
申请日：2013-03-21
申请人： SANDISK 3D LLC
发明人： Deepak C. Sekar , Franz Kreupl , Raghuveer S. Makala , Peter Rabkin , Chu-Chen Fu , Tong Zhang
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/35 , G11C2213/71 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1641 , H01L45/1675
摘要： Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide.
摘要翻译：本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。可逆电阻率开关元件可以通过在顶部电极上沉积防氧扩散材料（例如，重掺杂的Si，W，WN）来形成。可以将陷阱钝化材料（例如，氟，氮，氢，氘）并入到可逆电阻率切换元件的底部电极，金属氧化物区域或顶部电极中的一个或多个中。一个实施例包括在金属氧化物和顶部电极之间具有双层覆盖层的可逆电阻率开关元件。制造该器件可以包括沉积（未反应的）钛并原位沉积二氧化钛而没有空气破裂。一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。

4. 发明申请

US20130181181A1 MIIIM DIODE HAVING LANTHANUM OXIDE 审中-公开
标题翻译：具有氧化铝的MIIIM二极管
公开(公告)号：US20130181181A1
公开(公告)日：2013-07-18
申请号：US13787505
申请日：2013-03-06
申请人： SanDisk 3D LLC
发明人： Deepak C. Sekar , Tanmay Kumar , Peter Rabkin , Xiying Chen Costa
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , H01L27/2418 , H01L45/00 , H01L45/04 , H01L45/06 , H01L45/144 , H01L45/149
摘要： A MIIIM diode and method of fabricating are disclosed. In one aspect, the MIIIM diode comprises a first metal electrode, a first region comprising a first insulator material having an interface with the first metal electrode, a second region comprising a second insulator material having an interface with the first insulator material, a third region comprising a third insulator material having an interface with the second insulator material, and a second metal electrode having an interface with the third insulator material. At least one of the first, second, or third insulator materials is lanthanum oxide.
摘要翻译：公开了一种MIIIM二极管及其制造方法。一方面，MIIIM二极管包括第一金属电极，第一区域，包括与第一金属电极具有界面的第一绝缘体材料，第二区域包括与第一绝缘体材料具有界面的第二绝缘体材料，第三区域包括具有与第二绝缘体材料的界面的第三绝缘体材料和与第三绝缘体材料具有界面的第二金属电极。第一，第二或第三绝缘体材料中的至少一种是氧化镧。

5. 发明申请

US20130221311A1 TRAP PASSIVATION IN MEMORY CELL WITH METAL OXIDE SWITCHING ELEMENT 有权
标题翻译：具有金属氧化物开关元件的存储器中的陷阱钝化
公开(公告)号：US20130221311A1
公开(公告)日：2013-08-29
申请号：US13837917
申请日：2013-03-15
申请人： SANDISK 3D LLC
发明人： Deepak C. Sekar , Franz Kreupl , Raghuveer S. Makala , Peter Rabkin
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/35 , G11C2213/71 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1641 , H01L45/1675
摘要： Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide.
摘要翻译：本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。可逆电阻率开关元件可以通过在顶部电极上沉积防氧扩散材料（例如，重掺杂的Si，W，WN）来形成。可以将陷阱钝化材料（例如，氟，氮，氢，氘）并入到可逆电阻率切换元件的底部电极，金属氧化物区域或顶部电极中的一个或多个中。一个实施例包括在金属氧化物和顶部电极之间具有双层覆盖层的可逆电阻率开关元件。制造该器件可以包括沉积（未反应的）钛并原位沉积二氧化钛而没有空气破裂。一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。

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