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1. 发明授权

US3982967A Method of proton-enhanced diffusion for simultaneously forming integrated circuit regions of varying depths 失效
标题翻译：用于同时形成不同深度的集成电路区域的质子增强扩散方法
公开(公告)号：US3982967A
公开(公告)日：1976-09-28
申请号：US562370
申请日：1975-03-26
申请人： San-Mei Ku , Charles A. Pillus , Michael R. Poponiak , Robert O. Schwenker
发明人： San-Mei Ku , Charles A. Pillus , Michael R. Poponiak , Robert O. Schwenker
IPC分类号： C30B31/22 , H01L21/22 , H01L21/265 , H01L21/761 , H01L21/263
CPC分类号： H01L21/263 , H01L21/26506
摘要： In integrated circuit fabrication, a method is provided for simultaneously forming two regions of the same conductivity-type such as the base and isolation regions. In one embodiment, an epitaxial layer of one conductivity-type is formed on a substrate of opposite conductivity-type, after which dopant ions of the opposite conductivity-type are introduced into the epitaxial surface areas which are to provide the base and isolation regions, and in addition, the isolation regions are bombarded with non-dopant ions having a maximum atomic number of two, e.g., hydrogen or helium ion while the base regions are appropriately masked and remain umbombarded, said bombardment is carried out at temperatures below 300.degree. C, preferably room temperature. The bombardment is preferably carried out so that the non-dopant ions are implanted primarily in regions below the isolation regions. Next, the wafer is heated at a temperature at a range of from 600.degree. - 900.degree. C which is substantially below normal drive-in diffusion temperatures for unbombarded doped regions. The heating to be maintained for a period sufficient to drive-in diffuse the bombarded isolation regions through the epitaxial layer into contact with the substrate but is insufficient to drive-in the unbombarded base regions to such a depth.
摘要翻译：在集成电路制造中，提供了一种用于同时形成相同导电类型的两个区域的方法，例如基极和隔离区域。在一个实施例中，在相反导电型的衬底上形成一种导电类型的外延层，之后将相反导电类型的掺杂剂离子引入到要提供基极和隔离区域的外延表面区域中，此外，隔离区域用最大原子数为2的非掺杂离子（例如氢或氦离子）进行轰击，同时基底区域被适当地掩蔽并且保持不变，所述轰击在低于300℃的温度下进行，优选室温。优选进行轰击，使得非掺杂剂离子主要被注入在隔离区域下方的区域中。接下来，将晶片在600-900℃的温度范围内加热，这对于未掺杂的掺杂区域基本上低于正常的驱动扩散温度。保持加热持续足以驱动的时间段将被轰击的隔离区域通过外延层与基板接触，但是不足以将未轰炸的基极区域驱动到这样的深度。

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