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1. 发明授权

US09384803B2 Storage device and latch management method thereof 有权
标题翻译：存储设备及其锁存管理方法
公开(公告)号：US09384803B2
公开(公告)日：2016-07-05
申请号：US14468936
申请日：2014-08-26
申请人： Samsung Electronics Co., Ltd.
发明人： Sang-Soo Park , Moosung Kim , Taekyun Kang
IPC分类号： G11C7/20 , G11C5/14 , G11C16/30
CPC分类号： G11C7/20 , G11C5/148 , G11C16/30 , G11C2207/2227
摘要： A latch management method of a storage device includes permitting the storage device to enter a reduced power mode in which the storage device operates with a reduced power. The method includes reading initial latch data stored in the at least one nonvolatile memory device in response to the entering operation. The method includes setting latches associated with the at least one nonvolatile memory device based on the read initial latch data.
摘要翻译：存储装置的锁存管理方法包括允许存储装置进入存储装置以降低的功率运行的降低功率模式。该方法包括响应于输入操作读取存储在至少一个非易失性存储器件中的初始锁存数据。该方法包括基于读取的初始锁存数据来设置与至少一个非易失性存储器件相关联的锁存器。

2. 发明授权

US10169227B2 Memory controller and memory system including the same 有权
公开(公告)号：US10169227B2
公开(公告)日：2019-01-01
申请号：US15704888
申请日：2017-09-14
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Moosung Kim , Dawoon Jung
IPC分类号： G06F12/02 , G11C16/26 , G11C11/56
摘要： An operating method is for a memory device which controls a nonvolatile memory. The operating method includes managing a program depth bit map indicating an upper page program state of each of a plurality of word lines of the nonvolatile memory in response to an external write request, and outputting one of a plurality of different read commands to the nonvolatile memory based on information of the program depth bit map corresponding to a word line to be accessed in response to an external read request.

3. 发明申请

US20150248930A1 METHODS OF OPERATING NONVOLATILE MEMORY DEVICES THAT SUPPORT EFFICIENT ERROR DETECTION 审中-公开
标题翻译：操作有效的错误检测的非易失性存储器件的操作方法
公开(公告)号：US20150248930A1
公开(公告)日：2015-09-03
申请号：US14712939
申请日：2015-05-15
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Ji-Sang Lee , Moosung Kim , Kihwan Choi
IPC分类号： G11C11/56 , G11C16/34
CPC分类号： G11C11/5635 , G06F11/1048 , G11C11/5628 , G11C11/5642 , G11C16/02 , G11C16/0483 , G11C16/3413 , G11C16/3436 , G11C16/3454 , G11C29/04 , G11C2029/0411 , G11C2211/5621
摘要： Methods of operating nonvolatile memory devices may include identifying one or more multi-bit nonvolatile memory cells in a nonvolatile memory device that have undergone unintentional programming from an erased state to an at least partially programmed state. Errors generated during an operation to program a first plurality of multi-bit nonvolatile memory cells may be detected by performing a plurality of reading operations to generate error detection data and then decoding the error detection data to identify specific cells having errors. A programmed first plurality of multi-bit nonvolatile memory cells and a force-bit data vector, which was modified during the program operation, may be read to support error detection. This data, along with data read from a page buffer associated with the first plurality of multi-bit nonvolatile memory cells, may then be decoded to identify which of the first plurality of multi-bit nonvolatile memory cells are unintentionally programmed cells.
摘要翻译：操作非易失性存储器件的方法可以包括识别非易失性存储器件中的一个或多个多位非易失性存储器单元，其经历从擦除状态到至少部分编程状态的无意编程。可以通过执行多个读取操作来生成错误检测数据，然后解码错误检测数据以识别具有错误的特定单元，来检测在编程第一多个多位非易失性存储器单元的操作期间产生的错误。可以读取编程的第一多个多位非易失性存储单元和在编程操作期间被修改的强位数据向量，以支持错误检测。然后可以将该数据连同从与第一多个多位非易失性存储器单元相关联的页面缓冲器读取的数据解码以识别第一多个多位非易失性存储器单元中的哪一个是无意编程的单元。

4. 发明授权

US09087608B2 Method of programming non-volatile memory device and non-volatile memory device using the same 有权
公开(公告)号：US09087608B2
公开(公告)日：2015-07-21
申请号：US14614992
申请日：2015-02-05
申请人： Samsung Electronics Co., Ltd.
发明人： Moosung Kim , Ohsuk Kwon
IPC分类号： G11C16/10 , G11C11/56 , G11C7/10
CPC分类号： G11C16/12 , G06F12/0246 , G06F2212/7201 , G06F2212/7206 , G11C7/1048 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/24 , G11C16/3418 , G11C16/3427 , G11C16/3454 , G11C2211/5621
摘要： A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.

5. 发明授权

US09064581B2 Method of programming non-volatile memory device and non-volatile memory device using the same 有权
标题翻译：使用该方法编程非易失性存储器件和非易失性存储器件
公开(公告)号：US09064581B2
公开(公告)日：2015-06-23
申请号：US13949833
申请日：2013-07-24
申请人： Samsung Electronics Co., Ltd.
发明人： Moosung Kim , Ohsuk Kwon
IPC分类号： G11C16/10 , G11C11/56 , G11C16/04 , G11C16/24 , G11C7/10 , G11C16/34
CPC分类号： G11C16/12 , G06F12/0246 , G06F2212/7201 , G06F2212/7206 , G11C7/1048 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/24 , G11C16/3418 , G11C16/3427 , G11C16/3454 , G11C2211/5621
摘要： A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.
摘要翻译：根据示例实施例的非易失性存储器件的编程方法包括检测编程电压电平的操作（a）以及根据检测到的编程电压的电平分别提供具有可变电平的未选字线电压和位线预充电电压的操作（b）。

6. 发明授权

US09183924B2 Methods of operating nonvolatile memory devices that support efficient error detection 有权
公开(公告)号：US09183924B2
公开(公告)日：2015-11-10
申请号：US14712939
申请日：2015-05-15
申请人： Samsung Electronics Co., Ltd.
发明人： Ji-Sang Lee , Moosung Kim , Kihwan Choi
IPC分类号： G11C29/00 , G11C11/56 , G11C16/34 , G06F11/10
CPC分类号： G11C11/5635 , G06F11/1048 , G11C11/5628 , G11C11/5642 , G11C16/02 , G11C16/0483 , G11C16/3413 , G11C16/3436 , G11C16/3454 , G11C29/04 , G11C2029/0411 , G11C2211/5621
摘要： Methods of operating nonvolatile memory devices may include identifying one or more multi-bit nonvolatile memory cells in a nonvolatile memory device that have undergone unintentional programming from an erased state to an at least partially programmed state. Errors generated during an operation to program a first plurality of multi-bit nonvolatile memory cells may be detected by performing a plurality of reading operations to generate error detection data and then decoding the error detection data to identify specific cells having errors. A programmed first plurality of multi-bit nonvolatile memory cells and a force-bit data vector, which was modified during the program operation, may be read to support error detection. This data, along with data read from a page buffer associated with the first plurality of multi-bit nonvolatile memory cells, may then be decoded to identify which of the first plurality of multi-bit nonvolatile memory cells are unintentionally programmed cells.

7. 发明授权

US09007839B2 Nonvolatile memory device performing read operation with variable read voltage 有权
标题翻译：非易失性存储器件以可变的读取电压进行读取操作
公开(公告)号：US09007839B2
公开(公告)日：2015-04-14
申请号：US13915688
申请日：2013-06-12
申请人： Samsung Electronics Co., Ltd.
发明人： Ji-Sang Lee , Moosung Kim
IPC分类号： G11C11/34 , G11C16/26 , G11C11/56 , G11C16/34
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/3454 , G11C16/3495 , G11C2211/5641
摘要： A method of reading a nonvolatile memory device comprises applying a read voltage to a memory cell array to read selected memory cells, counting a number of the selected memory cells that have a threshold voltage higher or lower than the read voltage, and comparing the counted number with a reference value to determine a number of bits stored in the selected memory cells.
摘要翻译：读取非易失性存储器件的方法包括将读取电压施加到存储器单元阵列以读取所选择的存储器单元，对具有高于或低于读取电压的阈值电压的所选存储单元的数量进行计数，以及将所计数的数目具有用于确定存储在所选择的存储器单元中的位数的参考值。

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