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1. 发明申请

US20210230742A1 GAS DISCHARGE ROLL AND MANUFACTURING METHOD FOR SAME, AND PROCESSING APPARATUS USING GAS DISCHARGE ROLL 有权
公开(公告)号：US20210230742A1
公开(公告)日：2021-07-29
申请号：US17051727
申请日：2019-01-24
申请人： SUMITOMO METAL MINING CO., LTD.
发明人： Hideharu OKAMI
IPC分类号： C23C14/56 , C23C14/24 , F16C13/00 , B23C3/28 , B23K26/384
摘要： Provided is a gas discharge roil, which includes: an inner roll, which has a rotary shaft; an outer roll, which is fitted and integrated with an outer peripheral surface of the inner roll; gas introduction grooves, which are formed on the outer peripheral surface of the inner roll over an entire circumference thereof at substantially uniform intervals along a circumferential direction of the inner roll so as to extend along a rotary shaft direction of the inner roll, and which are configured to define gas introduction channels between an inner peripheral surface of the outer roll and the gas introduction grooves; and a group of gas discharge holes formed on the outer roll so as to penetrate through to the gas introduction channels. A circumferential cutoff rate of a gas introduction channel cross-section is 36% or less, or a porosity within a gas introduction range is 20% or less.

2. 发明申请

US20170221600A1 ELECTRODE SUBSTRATE FILM AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20170221600A1
公开(公告)日：2017-08-03
申请号：US15501336
申请日：2015-08-25
申请人： SUMITOMO METAL MINING CO., LTD.
发明人： Hideharu OKAMI
IPC分类号： H01B5/14 , H01B13/00 , C23C14/00 , C23C14/08 , B32B7/02 , B32B15/04
CPC分类号： H01B5/14 , B32B7/02 , B32B15/04 , B32B15/08 , B32B2307/412 , B32B2307/418 , B32B2309/105 , C23C14/0042 , C23C14/0063 , C23C14/06 , C23C14/08 , G06F3/041 , G06F3/044 , G06F3/045 , G06F2203/04103 , H01B13/0036
摘要： [Object] Provided are an electrode substrate film which does not cause trouble in a process to create a circuit pattern formed of a metal thin line and in which the circuit pattern is less visible even under highly bright illumination, and a method of manufacturing the same.[Solving Means] An electrode substrate film with a transparent substrate 52 and a metal laminate thin line includes a metal absorption layer 51 with a film thickness of 20 nm to 30 nm inclusive as a first layer, and a metal layer 50 as a second layer, counted from the transparent substrate side. Optical constants of the metal absorption layer in a visible wavelength range (400 to 780 nm) satisfy conditions that a refractive index is 1.8 to 2.2 and an extinction coefficient is 1.8 to 2.4 at a wavelength of 400 nm, the refractive index is 2.2 to 2.7 and the extinction coefficient is 1.9 to 2.8 at a wavelength of 500 nm, the refractive index is 2.5 to 3.2 and the extinction coefficient is 1.9 to 3.1 at a wavelength of 600 nm, the refractive index is 2.7 to 3.6 and the extinction coefficient is 1.7 to 3.3 at a wavelength of 700 nm, and the refractive index is 3.1 to 3.8 and the extinction coefficient is 1.5 to 3.4 at a wavelength of 780 nm. The highest reflectance in the visible wavelength range attributed to reflection at an interface between the transparent substrate and the metal absorption layer is 40% or less.

3. 发明公开

US20240117485A1 SPUTTERING TARGET AND METHOD FOR FORMING CESIUM TUNGSTEN OXIDE FILM 审中-公开
公开(公告)号：US20240117485A1
公开(公告)日：2024-04-11
申请号：US18286506
申请日：2022-02-21
申请人： SUMITOMO METAL MINING Co., Ltd.,
发明人： Hideharu OKAMI
IPC分类号： C23C14/34 , C23C14/08
CPC分类号： C23C14/3407 , C23C14/088
摘要： [Object] Provided is a sputtering target that makes it possible to set nCs/nW (film) expressing a ratio of Cs atoms to W atoms in a cesium tungsten oxide film formed by a sputtering method within such a desired range (0.3 or more to 0.36 or less) that the film can exhibit high transmittance in the visible wavelength region and absorption in the near-infrared wavelength region. [Solution] This target contains Cs and W. When [T−S distance] denotes a distance between the target and a substrate for film formation and P denotes a pressure in an atmosphere during film formation by sputtering and nW denotes the number of W atoms and nCs denotes the number of Cs atoms contained in the target, nCs/nW(T) expressing a ratio of Cs atoms to W atoms in the target satisfies the following (Formula 1) with respect to [T−S distance] and P: 0.09/{(−0.00161×[T−S distance]+0.00559)×P+0.346}≤nCs/nW (T)≤0.13/{(−0.00161×[T−S distance]+0.00559)×P+0.346} (Formula 1).

4. 发明申请

US20170226624A1 LAMINATE FILM AND ELECTRODE SUBSTRATE FILM, AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20170226624A1
公开(公告)日：2017-08-10
申请号：US15515370
申请日：2015-10-19
申请人： SUMITOMO METAL MINING CO., LTD.
发明人： Hideharu OKAMI
IPC分类号： C23C14/00 , C23C14/58 , H05K3/06 , H05K1/02 , H05K1/09 , H05K3/46 , C23C14/20 , G06F3/044
摘要： [Object] Provided are a laminate film and an electrode substrate film with excellent etching quality, in which a circuit pattern formed by etching processing is less visible under highly bright illumination, and a method of manufacturing the same.[Solving Means] A laminate film includes a transparent substrate 60 formed of a resin film and a layered film provided on at least one surface of the transparent substrate. The layered film includes metal absorption layers 61 and 63 as a first layer and metal layers (62, 65), (64, 66) as a second layer, counted from the transparent substrate side. The metal absorption layers are formed by a reactive sputtering method which uses a metal target made of Ni alone or an alloy containing two or more elements selected from Ni, Ti, Al, V, W, Ta, Si, Cr, Ag, Mo, and Cu, and a reactive gas containing oxygen. The reactive gas contains hydrogen.

5. 发明公开

US20240166555A1 OPTICAL FILM, SPUTTERING TARGET, AND METHOD OF PRODUCING OPTICAL FILM 审中-公开
公开(公告)号：US20240166555A1
公开(公告)日：2024-05-23
申请号：US17773488
申请日：2020-06-24
申请人： SUMITOMO METAL MINING CO., LTD.
发明人： Hideharu OKAMI
IPC分类号： C03C17/245 , C01G41/00 , C23C14/00 , C23C14/08 , C23C14/34 , C23C14/35 , C23C14/54 , G02B5/20 , C03C17/34
CPC分类号： C03C17/245 , C01G41/006 , C23C14/0042 , C23C14/083 , C23C14/3414 , C23C14/352 , C23C14/54 , G02B5/208 , C03C17/3417 , C03C2218/155 , C03C2218/156
摘要： Provided is an optical film (a composite tungsten oxide film containing cesium, tungsten, and oxygen), a sputtering target, and a method of producing a film by which film formation conditions can be easily obtained. An optical film of the present invention has transmissivity in a visible wavelength band, has absorbance in a near-infrared wavelength band, and has radio wave transparency, and is characterized in that the optical film comprises cesium, tungsten, and oxygen, in which a refractive index n and an extinction coefficient k of the optical film at each of 300 nm and wavelengths [400 nm, 600 nm, . . . , 2400 nm] specified at 200 nm intervals in a wavelength region from 400 nm to 2400 nm are set within a range between “n-max” and “n-min” made by graphing the maximum value and the minimum value of the refractive index in a wavelength dispersion graph of optical constants shown in FIG. 1 and within a range between “k-max” and “k-min” made by graphing the maximum value and the minimum value of the extinction coefficient in the above wavelength dispersion graph of optical constants.

6. 发明申请

US20220316049A1 OPTICAL FILM, SPUTTERING TARGET, AND METHOD OF PRODUCING OPTICAL FILM 有权
公开(公告)号：US20220316049A1
公开(公告)日：2022-10-06
申请号：US17635337
申请日：2020-06-24
申请人： SUMITOMO METAL MINING CO., LTD
发明人： Hideharu OKAMI
IPC分类号： C23C14/34 , C23C14/54 , C23C14/35 , C23C14/08 , C23C14/00 , C03C17/245 , C03C17/34 , G02B5/20 , H01J37/34
摘要： Provided is an optical film (composite tungsten oxide film containing cesium, tungsten, and oxygen), a sputtering target, and a method of producing an optical film by which film formation conditions can be easily obtained. An optical film of the present invention has transmissivity in a visible wavelength band, has absorbance in a near-infrared wavelength band, and has radio wave transparency, characterized in that the optical film comprises cesium, tungsten, and oxygen, and a refractive index n and an extinction coefficient k of the optical film at each of wavelengths [300 nm, 350 nm, 400 nm, 450 nm, . . . , 1700 nm] specified at 50 nm intervals in a wavelength region from 300 nm to 1700 nm are set respectively within specified numerical ranges.

7. 发明申请

US20170223826A1 LAMINATE FILM AND ELECTRODE SUBSTRATE FILM, AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20170223826A1
公开(公告)日：2017-08-03
申请号：US15501305
申请日：2015-08-25
申请人： SUMITOMO METAL MINING CO., LTD.
发明人： Hideharu OKAMI
IPC分类号： H05K1/02 , H05K3/06 , H05K1/09 , H05K3/46 , C23C14/24 , B32B7/02
摘要： [Object] Provided are an electrode substrate film in which a circuit pattern formed of a metal thin line is less visible even under highly bright illumination, and a laminate film applied to the same.[Solving Means] An electrode substrate film with a transparent substrate 52 and a metal laminate thin line includes a metal absorption layer 51 with a film thickness of 20 nm to 30 nm inclusive as a first layer, and a metal layer 50 as a second layer, counted from the transparent substrate side, the laminate thin line having a line width of 20 μm or less. Optical constants of the metal absorption layer in a visible wavelength range (400 to 780 nm) satisfy conditions that a refractive index is 2.0 to 2.2 and an extinction coefficient is 1.8 to 2.1 at a wavelength of 400 nm, the refractive index is 2.4 to 2.7 and the extinction coefficient is 1.9 to 2.3 at a wavelength of 500 nm, the refractive index is 2.8 to 3.2 and the extinction coefficient is 1.9 to 2.5 at a wavelength of 600 nm, the refractive index is 3.2 to 3.6 and the extinction coefficient is 1.7 to 2.5 at a wavelength of 700 nm, and the refractive index is 3.5 to 3.8 and the extinction coefficient is 1.5 to 2.4 at a wavelength of 780 nm. An average reflectance in the visible wavelength range attributed to reflection at an interface between the transparent substrate and the metal absorption layer is 20% or less, and a difference between a highest reflectance and a lowest reflectance in the visible wavelength range is 10% or less.

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