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1. 发明授权

US11121003B2 Method of predicting thermal donor formation behavior in silicon wafer, method of evaluating silicon wafer, and method of producing silicon wafer 有权
公开(公告)号：US11121003B2
公开(公告)日：2021-09-14
申请号：US16621219
申请日：2018-06-12
申请人： SUMCO Corporation
发明人： Kazuhisa Torigoe , Shigeru Umeno , Toshiaki Ono
IPC分类号： C30B33/02 , H01L21/322 , C30B29/06
摘要： Provided is a method of accurately predicting the thermal donor formation behavior in a silicon wafer, a method of evaluating a silicon wafer using the prediction method, and a method of producing a silicon wafer using the evaluation method. The method of predicting the formation behavior of thermal donors, includes: a first step of setting an initial oxygen concentration condition before performing heat treatment on the silicon wafer for reaction rate equations based on both a bond-dissociation model of oxygen clusters associated with the diffusion of interstitial oxygen and a bonding model of oxygen clusters associated with the diffusion of oxygen dimers; a second step of calculating the formation rate of oxygen clusters formed through the heat treatment using the reaction rate equations; and a third step of calculating the formation rate of thermal donors formed through the heat treatment based on the formation rate of the oxygen clusters.

2. 发明授权

US11094557B2 Silicon wafer 有权
公开(公告)号：US11094557B2
公开(公告)日：2021-08-17
申请号：US16609021
申请日：2018-06-19
申请人： SUMCO CORPORATION
发明人： Toshiaki Ono , Shigeru Umeno
IPC分类号： C30B29/06 , H01L21/322 , C30B30/04 , C30B33/02
摘要： A silicon wafer having a BMD density of 5×108/cm3 or more and 2.5×1010/cm3 or less in a region of 80 μm to 285 μm from the wafer surface when the silicon wafer is heat-treated at a temperature X (° C., 700° C.≤X≤1000° C.) for a time Y (min) and then subjected to an infrared tomography method in which the laser power is set to 50 mW and the exposure time of a detector is set to 50 msec. The time Y and the temperature X satisfy Y=7.88×1067×X−22.5.

3. 发明授权

US09412622B2 Epitaxial silicon wafer and method for manufacturing same 有权
标题翻译：外延硅晶片及其制造方法
公开(公告)号：US09412622B2
公开(公告)日：2016-08-09
申请号：US14781709
申请日：2013-10-09
申请人： SUMCO CORPORATION
发明人： Toshiaki Ono , Shigeru Umeno
IPC分类号： H01L29/30 , H01L21/322 , C30B29/06 , C30B15/20 , C30B15/04 , C30B33/02 , H01L29/16 , H01L29/36
CPC分类号： H01L21/3225 , C30B15/04 , C30B15/206 , C30B29/06 , C30B33/02 , H01L29/16 , H01L29/32 , H01L29/36
摘要： An epitaxial silicon wafer cut from a silicon single crystal grown by the Czochralski method, and having a diameter of 300 mm or more. In this epitaxial silicon wafer, the time required to cool every part of the silicon single crystal during the growth from 800° C. down to 600° C. is set to 450 minutes or less, the interstitial oxygen concentration is from 1.5×1018 to 2.2×1018 atoms/cm3 (old ASTM standard), the entire surface of the cut silicon wafer is composed of a COP region, and the BMD density in the bulk of the epitaxial wafer after a heat treatment at 1000° C. for 16 hours is 1×104/cm2 or less. In this epitaxial silicon wafer, even if the thermal process in a semiconductor device fabrication process is a low temperature thermal process, epitaxial defects do not occur, as well as sufficient gettering capability being obtainable.
摘要翻译：从由Czochralski法生长的直径为300mm以上的硅单晶切割的外延硅晶片。在该外延硅晶片中，将从800℃下降至600℃的生长期间的单晶硅单体所需的时间设定为450分钟以下，间隙氧浓度为1.5×10 18〜 2.2×1018原子/ cm3（旧ASTM标准），切割的硅晶片的整个表面由COP区组成，并且在1000℃下热处理16小时后的外延晶片的体积中的BMD密度为1×10 4 / cm 2以下。在该外延硅晶片中，即使半导体器件制造工艺中的热处理是低温热处理，也不会发生外延缺陷，以及可获得充分的吸杂能力。

4. 发明授权

US10177008B2 Silicon wafer and method for manufacturing the same 有权
公开(公告)号：US10177008B2
公开(公告)日：2019-01-08
申请号：US15104812
申请日：2014-01-14
申请人： SUMCO CORPORATION
发明人： Takashi Nakayama , Takeo Katoh , Kazumi Tanabe , Shigeru Umeno
IPC分类号： H01L21/32 , H01L29/32 , C30B15/20 , C30B15/10 , H01L21/322 , C30B29/06 , C30B33/02 , H01L21/324
摘要： This method for manufacturing a silicon wafer includes: a first heat treatment step of performing RTP treatment on the silicon wafer in an oxidizing atmosphere; a step of removing a region in the silicon wafer in which an oxygen concentration increases in the first heat treatment step; a second heat treatment step of performing, after performing this removing step, RTP treatment on the silicon wafer in a nitriding atmosphere or an Ar atmosphere; and a step of removing, after performing the second heat treatment step, a region in the silicon wafer in which an oxygen concentration decreases in the second heat treatment step. This method enables the manufacture of a silicon wafer in which latent defects such as OSF nuclei and oxygen precipitate nuclei existing in a PV region are destroyed or reduced, and that has a gettering site.

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