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1. 发明申请

US20220068395A1 MEMORY DEVICE 有权
公开(公告)号：US20220068395A1
公开(公告)日：2022-03-03
申请号：US17407903
申请日：2021-08-20
申请人： STMicroelectronics S.r.l.
发明人： Marcella CARISSIMI , Fabio Enrico Carlo DISEGNI , Chantal AURICCHIO , Cesare TORTI , Davide MANFRE' , Laura CAPECCHI , Emanuela CALVETTI , Stefano ZANCHI
IPC分类号： G11C16/10 , G11C16/28 , G11C16/24 , G11C16/30 , G11C7/04
摘要： A memory device includes programmable memory cells and a programming circuit for programming a selected memory cell to a target logic state by applying one or more programming current pulses. A temperature sensor operates to sense a temperature of the memory device. A reading circuit reads a current logic state of the selected memory cell after a predetermined programming current pulse of the programming current pulses. The reading circuit includes a sensing circuit that senses a current logic state of the selected memory cell according to a comparison between a reading electric current depending on the current logic state of the selected memory cell and a reference current. An adjusting circuit adjusts one or the other of the reading electric current and the reference electric current to be provided to the sensing circuit according to the temperature of the memory device.

2. 发明申请

US20150212880A1 ERROR CORRECTION IN DIFFERENTIAL MEMORY DEVICES WITH READING IN SINGLE-ENDED MODE IN ADDITION TO READING IN DIFFERENTIAL MODE 有权
标题翻译：在具有读取单边模式的差异存储器件中的错误校正，以便在差异模式下读取
公开(公告)号：US20150212880A1
公开(公告)日：2015-07-30
申请号：US14597824
申请日：2015-01-15
申请人： STMICROELECTRONICS S.r.l.
发明人： Marcella CARISSIMI , Marco PASOTTI
IPC分类号： G06F11/10 , G11C29/52
CPC分类号： G11C29/52 , G06F11/1048 , G11C7/18 , G11C11/5642 , G11C16/0441 , G11C16/26 , G11C16/28 , G11C2211/4013
摘要： A differential memory device includes of memory locations having a direct memory cell and a complementary memory cell. A corresponding method includes receiving a request of reading a selected data word associated with a selected code word, reading a differential code word representing a differential version of the selected code word, verifying the differential code word according to an error correction code, setting the selected data word according to the differential code word in response to a positive verification. The method further includes reading at least one single-ended code word representing a single-ended version of the selected code word, verifying the single-ended code word according to the error correction code, and setting the selected data word according to the single-ended code word in response to a negative verification of the differential code word and to a positive verification of the single-ended code word.
摘要翻译：差分存储器件包括具有直接存储单元和补充存储单元的存储单元。相应的方法包括接收读取与所选码字相关联的所选数据字的请求，读取表示所选码字的差分版本的差分码字，根据纠错码验证差分码字，设置所选择的码字数据字根据差分代码字响应积极的验证。该方法还包括读取表示所选码字的单端版本的至少一个单端码字，根据纠错码验证单端码字，并根据单频码字单位设置所选择的数据字，响应于对差分代码字的否定验证和对单端代码字的肯定验证，结束代码字。

3. 发明申请

US20140112080A1 IDENTIFICATION OF A CONDITION OF A SECTOR OF MEMORY CELLS IN A NON-VOLATILE MEMORY 有权
标题翻译：识别非易失性存储器中存储器细胞的一个条件的条件
公开(公告)号：US20140112080A1
公开(公告)日：2014-04-24
申请号：US14061977
申请日：2013-10-24
申请人： STMicroelectronics S.R.L.
发明人： Marcella CARISSIMI , Marco PASOTTI , Fabio DE SANTIS
IPC分类号： G11C7/06 , G11C7/08
CPC分类号： G11C7/22 , G11C7/06 , G11C7/062 , G11C7/08 , G11C7/10 , G11C16/0441 , G11C16/28
摘要： An embodiment solution for operating a non-volatile memory of a complementary type is proposed. The non-volatile memory includes a plurality of sectors of memory cells, each memory cell being adapted to take a programmed state or an erased state. Moreover, the memory cells are arranged in locations each formed by a direct memory cell and a complementary memory cell. Each sector of the non-volatile memory is in a non-written condition when the corresponding memory cells are in equal states and is in a written condition wherein each location thereof stores a first logic value or a second logic value when the memory cells of the location are in a first combination of different states or in a second combination of different states, respectively. In an embodiment, a corresponding method includes the following steps: selecting at least one of the sectors, determining an indication of the number of memory cells in the programmed state and an indication of the number of memory cells in the erased state of the selected sector, and identifying the condition of the selected sector according to a comparison between the indication of the number of memory cells in the programmed state and the indication of the number of memory cells in the erased state.
摘要翻译：提出了用于操作互补型非易失性存储器的实施例解决方案。非易失性存储器包括存储器单元的多个扇区，每个存储器单元适于采取编程状态或擦除状态。此外，存储单元被布置在由直接存储单元和互补存储单元形成的位置中。当相应的存储器单元处于相同的状态并且处于写入状态时，非易失性存储器的每个扇区处于非写入状态，其中当其中的每个位置存储第一逻辑值或第二逻辑值时，位置分别处于不同状态的第一组合或处于不同状态的第二组合中。在一个实施例中，相应的方法包括以下步骤：选择扇区中的至少一个，确定编程状态下的存储器单元的数量的指示以及所选扇区的擦除状态中的存储器单元的数量的指示并且根据编程状态下的存储单元的数量的指示与擦除状态下的存储单元的数量的指示之间的比较来识别所选扇区的状况。

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