会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明授权
    • Integrated multilayer magnetoresistive sensor and manufacturing method thereof
    • 集成多层磁阻传感器及其制造方法
    • US09423474B2
    • 2016-08-23
    • US13929635
    • 2013-06-27
    • STMicroelectronics S.r.l.
    • Dario PaciSarah ZerbiniBenedetto Vigna
    • G01R33/09G01R33/00G01R33/02
    • G01R33/096G01R33/0017G01R33/0052G01R33/0206
    • A magnetic-field sensor includes: a chip including a substrate having a first surface and an insulating layer covering the first surface; first and second magnetoresistors each extending into the insulating layer and having a main axis of magnetization and a secondary axis of magnetization; a first magnetic-field generator configured to generate a first magnetic field having field lines along the main axis of magnetization of the first magnetoresistor; a second magnetic-field generator configured to generate a second magnetic field having field lines along the main axis of magnetization of the second magnetoresistor. The main axes of magnetization extending transversely to each other and the secondary axes of magnetization extending transversely to each other. The first and second magnetoresistors extend into the insulating layer at a first distance and a second distance, respectively, that differ from one another, from the first surface.
    • 磁场传感器包括:芯片,其包括具有覆盖第一表面的第一表面和绝缘层的基板; 第一和第二磁阻器各自延伸到绝缘层中并且具有主轴的磁化和次级磁化轴; 第一磁场发生器,被配置为产生具有沿着所述第一磁电阻的主磁化轴的场线的第一磁场; 第二磁场发生器被配置为产生具有沿着第二磁阻的主磁化轴的场线的第二磁场。 磁化的主轴线彼此横向延伸,磁化的副轴相互横向延伸。 第一和第二磁阻器分别从第一表面延伸到彼此不同的第一距离和第二距离处的绝缘层。
    • 10. 发明申请
    • INTEGRATED MULTILAYER MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF
    • 集成多层磁阻传感器及其制造方法
    • US20160154067A1
    • 2016-06-02
    • US15013562
    • 2016-02-02
    • STMicroelectronics S.r.l.
    • Dario PaciSarah ZerbiniBenedetto Vigna
    • G01R33/00G01R33/09
    • G01R33/096G01R33/0017G01R33/0052G01R33/0206G01R33/09Y10T29/49034Y10T29/49043Y10T29/49044
    • A magnetic-field sensor includes: a chip including a substrate having a first surface and an insulating layer covering the first surface; first and second magnetoresistors each extending into the insulating layer and having a main axis of magnetization and a secondary axis of magnetization; a first magnetic-field generator configured to generate a first magnetic field having field lines along the main axis of magnetization of the first magnetoresistor; a second magnetic-field generator configured to generate a second magnetic field having field lines along the main axis of magnetization of the second magnetoresistor. The main axes of magnetization extending transversely to each other and the secondary axes of magnetization extending transversely to each other. The first and second magnetoresistors extend into the insulating layer at a first distance and a second distance, respectively, that differ from one another, from the first surface.
    • 磁场传感器包括:芯片,其包括具有覆盖第一表面的第一表面和绝缘层的基板; 第一和第二磁阻器各自延伸到绝缘层中并且具有主轴的磁化和次级磁化轴; 第一磁场发生器,被配置为产生具有沿着所述第一磁电阻的主磁化轴的场线的第一磁场; 第二磁场发生器被配置为产生具有沿着第二磁阻的主磁化轴的场线的第二磁场。 磁化的主轴线彼此横向延伸,磁化的副轴相互横向延伸。 第一和第二磁阻器分别从第一表面延伸到彼此不同的第一距离和第二距离处的绝缘层。