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1. 发明授权

US3828726A Fixture for positioning semiconductor discs in a diffusion furnace 失效
标题翻译：在扩散炉中定位半导体芯片的固定
公开(公告)号：US3828726A
公开(公告)日：1974-08-13
申请号：US26194472
申请日：1972-06-12
申请人： SIEMENS AG
发明人： DIETZE W , REUSCHEL K , STUT H
IPC分类号： H01L21/00 , B05C11/14
CPC分类号： H01L21/67115 , Y10S206/832
摘要： A fixture for positioning semiconductor discs in a diffusion furnace for diffusing doping material therein including a troughshaped holder having sidewalls composed of a semiconductor material, the sidewalls having opposed grooves therein proportioned to receive individual semiconductor discs therein, the sidewalls being positioned to engage the peripheries of said discs along limited areas of contact which lie approximately at the horizontal plane including the center of gravity of the discs.
摘要翻译：一种用于将半导体盘定位在扩散炉中用于在其中扩散其中的掺杂材料的固定装置，其包括具有由半导体材料构成的侧壁的槽形保持器，所述侧壁具有相对的凹槽，其中各个半导体盘在其中成比例，围绕着大致在包括盘的重心的水平面的有限接触区域的所述盘的周边。

2. 发明授权

US3751539A Use of vapor deposition to form a hollow tubular body closed on one end 失效
标题翻译：使用蒸汽沉积形成一个封闭的中空管体
公开(公告)号：US3751539A
公开(公告)日：1973-08-07
申请号：US3751539D
申请日：1971-10-26
申请人： SIEMENS AG
发明人： REUSCHEL K , KERSTING A
IPC分类号： C01B33/02 , C01B33/027 , C23C16/01 , C23C16/44 , C30B29/60 , H01L21/205 , B01J17/30 , B01J17/32
CPC分类号： C23C16/01
摘要： BODY IS COVERED BY A WAFER FROM THE SAME SEMICONDUCTOR MATERIAL WHOSE SHAPE CORRESPONDS TO THE OPEN SIDE. THEREAFTER, THE SEMICONDUCTOR MATERIAL IS PRECIPITATED FROM THE GASEOUS COMPOUND UNTIL THE DESIRED LAYER THICKNESS AND A GAS-TIGHT CONNECTION IS OBTAINED BETWEEN THE LAYER AND THE COVERING SEMICONDUCTOR MATERIAL. THE SECOND METHOD PRECIPITATES A SEMICONDUCTOR LAYER AND THEREAFTER WELDS A COVER ON THE TUBE.

DESCRIBED ARE TWO METHODS OF PRODUCING A HOLLOW BODY, COMPRISED OF SEMICONDUCTOR MATERIAL, ESPECIALLY SILICON, BY PRECIPITATION FROM A GASEOUS COMPOUND OF SAID SEMICONDUCTOR MATERIAL UPON THE SURFACE OF A HEATED CARRIER BODY, WHICH AFTER A SUFFICIENTLY THICK LAYER OF SEMICONDUCTOR MATERIAL HAS BEEN PRECIPITATED, IS REMOVED AGAIN WITHOUT DAMAGING SAID LAYER. ONE METHOD IS CHARACTERIZED BY USING A HOLLOW CARRIER BODY, OPEN AT LEAST AT TWO OPPOSITE SIDES. PRIOR TO THE PRECIPITATION OF THE SEMICONDUCTOR MATERIAL, ONE OF THE OPEN SIDES OF THE CARRIER

3. 发明授权

US3746496A Device for producing tubular bodies of semiconductor material, preferably silicon or germanium 失效
标题翻译：用于生产半导体材料的管状体的设备，优选的硅或锗
公开(公告)号：US3746496A
公开(公告)日：1973-07-17
申请号：US3746496D
申请日：1971-02-08
申请人： SIEMENS AG
发明人： DIETZE W , REUSCHEL K , SANDMANN H
IPC分类号： C23C16/44 , C23C16/01 , C23C16/22 , C30B25/00 , C30B25/02 , C30B29/08 , C30B29/60 , C30B35/00 , H01L21/22 , C23C13/08 , B29C13/00
CPC分类号： C30B29/06 , C23C16/01 , C23C16/22 , C30B25/00 , C30B25/02 , C30B29/60
摘要： A device for producing tubular bodies of semiconductor material, preferably of silicon or germanium. To this end, a rod or tube shaped carrier is heated in a reaction gas for precipitating the respective semiconductor, as a result of which the jacket area of the carrier is coated with a layer of the semiconductor. Following the removal of the carrier, this semiconductor layer defines the desired tube. At least two vertical carriers of carbon material, e.g. graphite, are each held at their lower ends by an electrode, and are connected at their upper ends by a conductive bridge, preferably of carbon.
摘要翻译：一种用于生产优选硅或锗的半导体材料的管状体的装置。为此，在反应气体中加热棒状或管状的载体，以使相应的半导体沉淀，由此，载体的护套区域涂覆有半导体层。在移除载体之后，该半导体层限定所需的管。至少两个碳材料的垂直载体，例如。石墨通过电极保持在其下端，并且在其上端通过导电桥，优选碳连接。

4. 发明授权

US3834349A Device for holding semiconductor discs during high temperature treatment 失效
标题翻译：用于在高温处理期间保持半导体盘的装置
公开(公告)号：US3834349A
公开(公告)日：1974-09-10
申请号：US26194572
申请日：1972-06-12
申请人： SIEMENS AG
发明人： DIETZE W , EMEIS R , REUSCHEL K , KELLER W , MUEHLBAUER A
IPC分类号： H01L21/00 , B05C11/14
CPC分类号： H01L21/67115 , Y10S206/833 , Y10S269/903
摘要： A device for holding semiconductor discs during high temperature treatment, such as the diffusion of impurities therein, consisting of a base plate having grooves extending therealong, and a plurality of spaced holders supported by the base plate, the holders having slots therein which are vertically aligned with the grooves in the base plate so that a semiconductor disc positioned with its edge in one of the grooves will be supported by the slots in the holder at a position at or above its center of gravity to prevent bending of the discs during high temperature treatment.
摘要翻译：一种用于在高温处理期间保持半导体盘的装置，例如其中的杂质的扩散，其由具有沿其延伸的槽的基板组成，以及由基板支撑的多个间隔开的保持器，其中具有垂直对准的槽底板中的凹槽使得在其一个凹槽中其边缘定位的半导体盘将在保持器中的位于其重心处或其重心处的位置处被支撑，以防止在高温处理期间盘的弯曲。

5. 发明授权

US3781209A Method of producing homogeneous rods of semiconductor material 失效
标题翻译：生产半导体材料均质体的方法
公开(公告)号：US3781209A
公开(公告)日：1973-12-25
申请号：US3781209D
申请日：1971-12-02
申请人： SIEMENS AG
发明人： REUSCHEL K , DIETZE W , MUHLBAUER A , SANDMANN H
IPC分类号： C30B13/00 , C30B13/08 , C30B13/10 , B01J17/08
CPC分类号： C30B13/08 , C30B13/00 , C30B13/10 , Y10S117/912
摘要： A PERPENDICULAR TUBE OF SEMICONDUCTOR MATERIAL IS FILLED WITH CRYSTALLINE SEMICONDUCTOR WASTE AND/OR DOPANT. A MOLTEN ZONE IS GUIDED THROUGH THE TUBE AND THE FILLING, WHEREBY THE FILLING FUSES WITH THE TUBE.

6. 发明授权

US3853974A Method of producing a hollow body of semiconductor material 失效
标题翻译：生产半导体材料的中空体的方法
公开(公告)号：US3853974A
公开(公告)日：1974-12-10
申请号：US33429473
申请日：1973-02-21
申请人： SIEMENS AG
发明人： REUSCHEL K , DIETZE W
IPC分类号： C01B33/02 , C23C16/01 , C23C16/24 , B01J17/28 , B29C13/04
CPC分类号： C23C16/24 , C01B33/02 , C23C16/01 , Y10S148/007 , Y10S148/025 , Y10S148/027 , Y10S148/049 , Y10S148/073 , Y10S148/122
摘要： An at least unilaterally open hollow body of silicon or other semiconductor material is produced by thermally reducing a gaseous compound of the same material and precipitating the segregated material upon a heated carrier of different material, preferably graphite or other industrial carbon, and thereafter removing the resulting hollow semiconductor body from the carrier. The gaseous compound is supplied to the heated carrier in mixture with a reduction gas, preferably hydrogen, in a molar ratio that substantially corresponds to the reaction equilibrium at the carrier temperature obtaining at the beginning of the reduction and precipitation process. After the precipitated hollow body has reached a layer thickness of a few microns, the molar ratio is changed so as to increase the rate of precipitation. The method can be modified by changing the throughput of the gaseous mixtures from a lower to a higher value after a layer thickness of a few microns has been reached and then continuing the precipitation at a higher rate until the desired full layer thickness is obtained.
摘要翻译：通过热还原相同材料的气态化合物并将分离的材料沉淀在不同材料，优选石墨或其它工业碳的加热载体上，然后除去所得到的至少单向开放的硅或其它半导体材料的中空体中空半导体体从载体。将气态化合物与还原气体（优选氢气）混合加入到加热的载体中，其摩尔比基本上对应于在还原和沉淀过程开始时获得的载体温度下的反应平衡。在沉淀的中空体已经达到几微米的层厚度之后，改变摩尔比以增加沉淀速率。可以通过在达到几微米的层厚度之后将气态混合物的生产量从较低值改变为更高的值，然后以更高的速率继续沉淀直到获得所需的全层厚度来修改该方法。

7. 发明授权

US3805735A Device for indiffusing dopants into semiconductor wafers 失效
标题翻译：将掺杂物掺入半导体波长的器件
公开(公告)号：US3805735A
公开(公告)日：1974-04-23
申请号：US34825873
申请日：1973-04-05
申请人： SIEMENS AG
发明人： REUSCHEL K , DIETZE W , SUB M
IPC分类号： C30B31/14 , C30B31/16 , C23C13/08
CPC分类号： C30B31/165 , C30B31/14 , Y10S118/90
摘要： In a silicon tube whose diameter is two to three times larger than the diameter of the wafers to be diffused, a rod is situated centrally and in parallel to the tubular axis and has channels extending in parallel to the rod axis. These channels define, together with the tubular wall, cages for the stacks of wafers. In this manner, several parallel wafer stacks may be diffused in a single silicon tube. Favorable degrees of utilization of the silicon tube are obtained with five and six parallel stacks of wafers.
摘要翻译：在直径比要扩散的晶片的直径大2至3倍的硅管中，杆位于中心并且平行于管状轴线并且具有平行于杆轴线延伸的通道。这些通道与管状壁一起限定了用于堆叠的晶片的笼。以这种方式，几个平行的晶片堆叠可以在单个硅管中扩散。通过五个和六个平行堆叠的晶片获得硅管的有利程度。

8. 发明授权

US3781152A Apparatus for precipitating a layer of semiconductor material from a gaseous compound of the semiconductor material 失效
标题翻译：用于从半导体材料的气体化合物预处理半导体材料层的装置
公开(公告)号：US3781152A
公开(公告)日：1973-12-25
申请号：US3781152D
申请日：1972-01-31
申请人： SIEMENS AG
发明人： KELLER W , KERSTING A , REUSCHEL K
IPC分类号： C23C16/44 , C23C16/01 , C30B29/60 , H01L21/22 , B29C23/00 , B29D23/00
CPC分类号： C23C16/01
摘要： Apparatus for producing a hollow semiconductor body, particularly of silicon. Semiconductor is precipitated on the outer surface of a heated carrier body. The carrier body is thereafter removed without damaging the semiconductor body.
摘要翻译：通过在电加热心轴上与气态半导体化合物的反应沉淀而制造中空半导体体，特别是硅的方法，其改进包括在沉淀半导体材料之前用烟灰涂覆心轴。

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