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1. 发明授权

US09514926B2 Substrate recycling method 有权
标题翻译：基材回收方法
公开(公告)号：US09514926B2
公开(公告)日：2016-12-06
申请号：US14703773
申请日：2015-05-04
申请人： Seoul Viosys Co., Ltd.
发明人： Su Youn Hong , Joo Won Choi , Jeong Hun Heo , Su Jin Shin , Choong Min Lee
IPC分类号： H01L21/02 , H01L21/306 , H01L33/00
CPC分类号： H01L21/02032 , H01L21/02002 , H01L21/306 , H01L21/30612 , H01L21/30617 , H01L33/0079
摘要： Embodiments of the disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.
摘要翻译：本公开的实施方案涉及基材回收方法和再循环基材。该方法包括从外延层分离衬底的第一表面; 在所述基板的相对的第二表面上形成保护层; 电化学蚀刻衬底的第一表面; 以及化学蚀刻所述基板的电化学蚀刻的第一表面。

2. 发明申请

US20150144874A1 UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：紫外线发光二极管及其制造方法
公开(公告)号：US20150144874A1
公开(公告)日：2015-05-28
申请号：US14556033
申请日：2014-11-28
申请人： Seoul Viosys Co., Ltd.
发明人： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Chang Suk Han , Hyo Shik Choi
IPC分类号： H01L33/00 , H01L33/32 , H01L33/06
CPC分类号： H01L33/32 , H01L33/06
摘要： A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well layers containing Al and alternately arranged with the barrier layer, and at least one conditioning layer. Each conditioning layer is placed between the well layer and the barrier layer adjacent to the well layer and is formed of a binary nitride semiconductor. The design of the conditioning layer can reduce stress of the active area while allowing uniform control of the composition of the well layers and/or the barrier layers.
摘要翻译：提供了一种UV发光二极管及其制造方法。发光二极管包括在n型氮化物基半导体层和p型氮化物基半导体层之间的有源区，其中有源区包括多个含有Al的势垒层，多个阱层含有Al和交替布置有阻挡层，以及至少一个调理层。每个调理层位于阱层和与阱层相邻的势垒层之间，并由二元氮化物半导体形成。调节层的设计可以减少有源区的应力，同时允许均匀地控制阱层和/或阻挡层的组成。

3. 发明授权

US09882085B2 Method for separating epitaxial layers from growth substrates, and semiconductor device using same 有权
公开(公告)号：US09882085B2
公开(公告)日：2018-01-30
申请号：US15040969
申请日：2016-02-10
申请人： Seoul Viosys Co., Ltd.
发明人： Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Su Jin Shin , Ki Bum Nam , Yu Dae Han , A Ram Cha Lee
IPC分类号： H01L33/24 , H01L33/22 , H01L33/00 , H01L33/20 , H01L21/02 , H01L29/06 , H01L33/02
CPC分类号： H01L33/24 , H01L21/0243 , H01L21/02488 , H01L21/02494 , H01L21/0254 , H01L21/02664 , H01L29/0657 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/025 , H01L33/20 , H01L33/22
摘要： The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

4. 发明授权

US09543476B2 UV light emitting diode and method of fabricating the same 有权
标题翻译： UV发光二极管及其制造方法
公开(公告)号：US09543476B2
公开(公告)日：2017-01-10
申请号：US14556033
申请日：2014-11-28
申请人： Seoul Viosys Co., Ltd.
发明人： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Chang Suk Han , Hyo Shik Choi
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/32 , H01L33/06
摘要： A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well layers containing Al and alternately arranged with the barrier layer, and at least one conditioning layer. Each conditioning layer is placed between the well layer and the barrier layer adjacent to the well layer and is formed of a binary nitride semiconductor. The design of the conditioning layer can reduce stress of the active area while allowing uniform control of the composition of the well layers and/or the barrier layers.
摘要翻译：提供了一种UV发光二极管及其制造方法。发光二极管包括在n型氮化物基半导体层和p型氮化物基半导体层之间的有源区，其中有源区包括多个含有Al的势垒层，多个阱层含有Al和交替布置有阻挡层，以及至少一个调理层。每个调理层位于阱层和与阱层相邻的势垒层之间，并由二元氮化物半导体形成。调节层的设计可以减少有源区的应力，同时允许均匀地控制阱层和/或阻挡层的组成。

5. 发明申请

US20150318436A1 METHOD FOR SEPARATING GROWTH SUBSTRATE, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DIODE MANUFACTURED USING METHODS 有权
标题翻译：分离生长基板的方法，制造发光二极管的方法和使用方法制造的发光二极管
公开(公告)号：US20150318436A1
公开(公告)日：2015-11-05
申请号：US14436068
申请日：2013-08-01
申请人： SEOUL VIOSYS CO., LTD.
发明人： Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Young Wug Kim , Su Jin Shin , Su Youn Hong
IPC分类号： H01L33/00 , H01L33/32 , H01L33/46 , H01L33/20
CPC分类号： H01L33/0079 , H01L33/0075 , H01L33/0095 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/46 , H01L2933/0025
摘要： Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.
摘要翻译：公开了用于分离生长衬底的方法，制造发光二极管的方法和发光二极管。根据一个实施方案的分离生长衬底的方法包括：制备生长衬底; 在生长衬底上形成牺牲层和掩模图案; 通过使用电化学蚀刻（ECE）蚀刻牺牲层; 覆盖掩模图案，并且通过元件分离区域形成彼此分离的多个氮化物半导体堆叠结构; 将支撑基板附接到所述多个半导体堆叠结构，其中所述支撑基板具有连接到所述元件分离区域的多个通孔; 以及将生长衬底与氮化物半导体堆叠结构分离。

6. 发明授权

US09111840B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09111840B2
公开(公告)日：2015-08-18
申请号：US14053098
申请日：2013-10-14
申请人： SEOUL VIOSYS CO., LTD.
发明人： Jeong Hun Heo , Yeo Jin Yoon , Joo Won Choi , Joon Hee Lee , Chang Yeon Kim , Su Young Lee
IPC分类号： H01L27/15 , H01L33/62
CPC分类号： H01L33/0075 , H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
摘要： Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate.
摘要翻译：本发明的示例性实施例公开了一种半导体器件及其制造方法。半导体器件包括氮化镓衬底，设置在氮化镓衬底上的多个半导体堆叠以及设置在氮化镓衬底和多个半导体堆叠之间的绝缘图案，绝缘图案使半导体堆叠与氮化镓衬底绝缘。

7. 发明申请

US20150069418A1 METHOD FOR SEPARATING EPITAXIAL LAYERS AND GROWTH SUBSTRATES, AND SEMICONDUCTOR DEVICE USING SAME 有权
标题翻译：用于分离外延层和生长衬底的方法以及使用其的半导体器件
公开(公告)号：US20150069418A1
公开(公告)日：2015-03-12
申请号：US14386775
申请日：2013-03-19
申请人： SEOUL VIOSYS CO., LTD.
发明人： Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Su Jin Shin , Ki Bum Nam , Yu Dae Han , A Ram Cha Lee
IPC分类号： H01L21/02 , H01L29/06 , H01L33/00 , H01L33/20
CPC分类号： H01L33/24 , H01L21/0243 , H01L21/02488 , H01L21/02494 , H01L21/0254 , H01L21/02664 , H01L29/0657 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/025 , H01L33/20 , H01L33/22
摘要： The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.
摘要翻译：本发明涉及用于分离外延层和生长衬底的方法以及使用其的半导体器件。根据本发明，提供一种半导体器件，其包括支撑衬底和设置在支撑衬底上的多个半导体层，其中半导体层的最上层具有不均匀粗糙度的表面。

8. 发明授权

US10043943B2 UV light emitting diode having a stress adjustment layer 有权
公开(公告)号：US10043943B2
公开(公告)日：2018-08-07
申请号：US15563538
申请日：2016-03-29
申请人： SEOUL VIOSYS CO., LTD.
发明人： Ki Yon Park , Jeong Hun Heo , Yu Dae Han , Gun Woo Han
IPC分类号： H01L33/12 , H01L33/06 , H01L33/22 , H01L33/00 , H01L33/38 , H01L33/32
摘要： Disclosed herein is a UV light emitting diode. The UV light emitting diode includes a first conductive type semiconductor layer; a first stress adjustment layer disposed on the first conductive type semiconductor layer, and including a first nitride layer including Al and a second nitride layer disposed on the first nitride layer and having a lower Al composition ratio than the first nitride layer; an active layer disposed on the first stress adjustment layer; and a second conductive type semiconductor layer disposed on the active layer, wherein the first stress adjustment layer includes an Al delta layer inserted in the first nitride layer, and a lower surface of the first nitride layer in which the Al delta layer is inserted has greater average tensile stress than a lower surface of the second nitride layer directly disposed on the first nitride layer.

9. 发明授权

US09905732B2 UV light emitting diode and method of fabricating the same 有权
公开(公告)号：US09905732B2
公开(公告)日：2018-02-27
申请号：US15294563
申请日：2016-10-14
申请人： Seoul Viosys Co., Ltd.
发明人： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Gun Woo Han
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32
CPC分类号： H01L33/32 , H01L33/007 , H01L33/06
摘要： Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.

10. 发明授权

US09450141B2 Method for separating growth substrate, method for light-emitting diode, and light-emitting diode manufactured using methods 有权
标题翻译：分离生长衬底的方法，发光二极管的方法和使用方法制造的发光二极管
公开(公告)号：US09450141B2
公开(公告)日：2016-09-20
申请号：US14436068
申请日：2013-08-01
申请人： Seoul Viosys Co., Ltd.
发明人： Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Young Wug Kim , Su Jin Shin , Su Youn Hong
IPC分类号： H01L33/00 , H01L33/32 , H01L27/15 , H01L21/02 , H01L33/20 , H01L33/46 , H01L33/12
CPC分类号： H01L33/0079 , H01L33/0075 , H01L33/0095 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/46 , H01L2933/0025
摘要： Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.
摘要翻译：公开了用于分离生长衬底的方法，制造发光二极管的方法和发光二极管。根据一个实施方案的分离生长衬底的方法包括：制备生长衬底; 在生长衬底上形成牺牲层和掩模图案; 通过使用电化学蚀刻（ECE）蚀刻牺牲层; 覆盖掩模图案，并且通过元件分离区域形成彼此分离的多个氮化物半导体堆叠结构; 将支撑基板附接到所述多个半导体堆叠结构，其中所述支撑基板具有连接到所述元件分离区域的多个通孔; 以及将生长衬底与氮化物半导体堆叠结构分离。

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