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1. 发明授权

US11063125B2 Metal oxide film and semiconductor device 有权
公开(公告)号：US11063125B2
公开(公告)日：2021-07-13
申请号：US16739647
申请日：2020-01-10
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yasuharu Hosaka , Toshimitsu Obonai , Yukinori Shima , Masami Jintyou , Daisuke Kurosaki , Takashi Hamochi , Junichi Koezuka , Kenichi Okazaki , Shunpei Yamazaki
IPC分类号： H01L29/24 , H01L29/786 , C04B35/622 , C04B35/453 , H01L27/12 , H01L29/778 , C23C14/58 , C23C14/08 , C04B35/01 , C03C17/245
摘要： A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

2. 发明授权

US10692994B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US10692994B2
公开(公告)日：2020-06-23
申请号：US15846657
申请日：2017-12-19
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yasuharu Hosaka , Takahiro Iguchi , Masami Jintyou , Takashi Hamochi , Junichi Koezuka
IPC分类号： H01L29/10 , H01L29/66 , H01L29/786 , H01L21/4757 , H01L21/4763 , H01L21/385 , H01L21/02 , H01L29/49
摘要： To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.

3. 发明申请

US20190189466A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, DISPLAY DEVICE, AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20190189466A1
公开(公告)日：2019-06-20
申请号：US16270624
申请日：2019-02-08
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Masami Jintyou , Junichi Koezuka , Takashi Hamochi , Yasuharu Hosaka
IPC分类号： H01L21/385 , H01L21/02 , H01L21/44 , H01L21/443 , H01L29/786 , H01L29/04 , H01L29/49 , H01L29/66 , H01L21/4757
CPC分类号： H01L21/385 , H01L21/0214 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/02323 , H01L21/02326 , H01L21/0234 , H01L21/44 , H01L21/443 , H01L21/4757 , H01L29/045 , H01L29/4908 , H01L29/518 , H01L29/66969 , H01L29/78648 , H01L29/7869
摘要： The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

4. 发明授权

US10096684B2 Metal oxide film and semiconductor device 有权
公开(公告)号：US10096684B2
公开(公告)日：2018-10-09
申请号：US15391186
申请日：2016-12-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yasuharu Hosaka , Toshimitsu Obonai , Yukinori Shima , Masami Jintyou , Daisuke Kurosaki , Takashi Hamochi , Junichi Koezuka , Kenichi Okazaki , Shunpei Yamazaki
IPC分类号： H01L29/24 , C04B35/453 , C04B35/622 , H01L29/786 , C03C17/245 , C04B35/01 , C23C14/08 , C23C14/58
摘要： A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

5. 发明授权

US09570329B2 Peeling apparatus and manufacturing apparatus of semiconductor device 有权
标题翻译：半导体装置的剥离装置及制造装置
公开(公告)号：US09570329B2
公开(公告)日：2017-02-14
申请号：US15204091
申请日：2016-07-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
IPC分类号： H01L31/18 , H01L21/67 , H01L27/12 , H01L21/683 , B32B43/00 , H01L31/20
CPC分类号： H01L27/1266 , B32B43/006 , G02F1/1303 , G02F1/13306 , G06K19/0772 , H01L21/67132 , H01L21/6835 , H01L27/1214 , H01L27/1218 , H01L27/156 , H01L31/1892 , H01L31/206 , H01L33/005 , H01L51/003 , H01L51/0097 , H01L2221/68318 , H01L2221/6835 , H01L2221/68363 , H01L2221/68386 , H01L2221/68395 , H01L2227/326 , H01L2251/5338 , H01L2924/19041 , H01L2924/30105 , Y10T29/41
摘要： To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.
摘要翻译：为了在从用于制造半导体元件的基板剥离包含半导体元件的元件形成层而被除去形成有元件形成层和剥离层的基板和薄膜之间的间隙中时，为了消除放电，加压辊。该膜附着在加压辊之间的元件形成层上，加压辊的一侧的加压辊的弯曲表面沿加压辊的弯曲表面弯曲并收集。在元件形成层和剥离层之间产生剥离，并且元件形成层被转印到膜上。通过喷嘴将液体顺序地供给到通过剥离产生的元件形成层和剥离层之间的间隙，使得在元件形成层和剥离层的表面上产生的电荷被液体扩散。

6. 发明授权

US09496412B2 Semiconductor device, manufacturing method thereof, and display device including the semiconductor device 有权
标题翻译：半导体装置及其制造方法以及包括该半导体装置的显示装置
公开(公告)号：US09496412B2
公开(公告)日：2016-11-15
申请号：US14796403
申请日：2015-07-10
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junichi Koezuka , Kenichi Okazaki , Daisuke Kurosaki , Yukinori Shima , Yasuharu Hosaka
IPC分类号： H01L29/786 , H01L29/423 , H01L29/66 , H01L21/02
CPC分类号： H01L29/66969 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/1259 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film includes a first region in which an atomic proportion of In is larger than that of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). The second oxide semiconductor film includes a second region in which an atomic proportion of In is smaller than that of the first oxide semiconductor film. The second region includes a portion thinner than the first region.
摘要翻译：晶体管包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜，与氧化物半导体膜电连接的源电极和漏电极。氧化物半导体膜包括栅电极侧的第一氧化物半导体膜和第一氧化物半导体膜上的第二氧化物半导体膜。第一氧化物半导体膜包括其中In的原子比例大于M（M为Ti，Ga，Sn，Y，Zr，La，Ce，Nd或Hf）的原子比例的第一区域。第二氧化物半导体膜包括其中In的原子比例小于第一氧化物半导体膜的原子比例的第二区域。第二区域包括比第一区域薄的部分。

7. 发明授权

US09153649B2 Semiconductor device and method for evaluating semiconductor device 有权
标题翻译：半导体装置及半导体装置的评价方法
公开(公告)号：US09153649B2
公开(公告)日：2015-10-06
申请号：US14091907
申请日：2013-11-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toshinari Sasaki , Hiroshi Kanemura , Yasuharu Hosaka , Shuhei Yokoyama , Toshimitsu Obonai
IPC分类号： G01R31/02 , H01L29/22 , H01L29/786 , H01L27/146 , G09G3/00 , G09G3/32 , G09G3/36 , G01R31/265
CPC分类号： H01L29/7869 , G01R31/2656 , G09G3/006 , G09G3/3225 , G09G3/3648 , H01L27/14678 , H01L27/14692 , H01L29/22
摘要： A semiconductor layer with a low density of trap states is provided. A transistor with stable electrical characteristics is provided. A transistor having high field-effect mobility is provided. A semiconductor device including the transistor is provided. A method for evaluating a semiconductor layer is provided. A method for evaluating a transistor is provided. A method for evaluating a semiconductor device is provided. Provided is, for example, a semiconductor layer with a low defect density which can be used for a channel formation region of a transistor, a transistor including a semiconductor layer with a low defect density in a channel formation region, or a semiconductor device including the transistor.
摘要翻译：提供了具有低密度陷阱状态的半导体层。提供具有稳定电特性的晶体管。提供具有高场效应迁移率的晶体管。提供包括晶体管的半导体器件。提供了一种用于评估半导体层的方法。提供了一种用于评估晶体管的方法。提供了一种用于评估半导体器件的方法。例如，提供了可以用于晶体管的沟道形成区域的具有低缺陷密度的半导体层，在沟道形成区域中包括具有低缺陷密度的半导体层的晶体管，或包括晶体管的半导体器件晶体管。

8. 发明授权

US08860022B2 Oxide semiconductor film and semiconductor device 有权
标题翻译：氧化物半导体膜和半导体器件
公开(公告)号：US08860022B2
公开(公告)日：2014-10-14
申请号：US13862716
申请日：2013-04-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toshinari Sasaki , Shuhei Yokoyama , Takashi Hamochi , Yusuke Nonaka , Yasuharu Hosaka
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A method for evaluating an oxide semiconductor film, a method for evaluating a transistor including an oxide semiconductor film, a transistor which includes an oxide semiconductor film and has favorable switching characteristics, and an oxide semiconductor film which is applicable to a transistor and enables the transistor to have favorable switching characteristics are provided. A PL spectrum of an oxide semiconductor film obtained by low-temperature PL spectroscopy has a first curve whose local maximum value is found in a range of 1.6 eV or more and 1.8 eV or less and a second curve whose local maximum value is found in a range of 1.7 eV or more and 2.4 eV or less. A value obtained by dividing the area of the second curve by the sum of the area of the first curve and the area of the second curve is 0.1 or more and less than 1.
摘要翻译：一种用于评估氧化物半导体膜的方法，包括氧化物半导体膜的晶体管的评估方法，包括氧化物半导体膜并且具有良好的开关特性的晶体管，以及可应用于晶体管并使晶体管能够实现的氧化物半导体膜具有良好的开关特性。通过低温PL光谱获得的氧化物半导体膜的PL光谱具有第一曲线，其局部最大值在1.6eV以上至1.8eV以下的范围内，第二曲线的局部最大值位于范围为1.7eV以上且2.4eV以下。通过将第二曲线的面积除以第一曲线的面积和第二曲线的面积之和而得到的值为0.1以上且小于1。

9. 发明授权

US08809154B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08809154B2
公开(公告)日：2014-08-19
申请号：US13721972
申请日：2012-12-20
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junichi Koezuka , Kenichi Okazaki , Yasuharu Hosaka , Terumasa Ikeyama , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L21/02365 , G02F1/1368 , H01L21/0214 , H01L21/022 , H01L21/02274 , H01L21/02318 , H01L21/02337 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/4908 , H01L29/66477 , H01L29/7869
摘要： A highly reliable semiconductor device in which a transistor including an oxide semiconductor film has stable electric characteristics is manufactured. In the semiconductor device which includes an inverted-staggered transistor having a bottom-gate structure and being provided over a substrate having an insulating surface, at least a first gate insulating film and a second gate insulating film are provided between a gate electrode layer and an oxide semiconductor film, and heat treatment is performed at a temperature of 450° C. or higher, preferably 650° C. or higher, and then the oxide semiconductor film is formed. By the heat treatment at a temperature of 450° C. or higher before the formation of the oxide semiconductor film, diffusion of hydrogen elements into the oxide semiconductor film, which causes degradation or variations in electric characteristics of the transistor, can be reduced, so that the transistor can have stable electric characteristics.
摘要翻译：制造其中包含氧化物半导体膜的晶体管具有稳定的电特性的高度可靠的半导体器件。在包括具有底栅结构的反交错晶体管并且设置在具有绝缘表面的衬底上的半导体器件中，至少第一栅极绝缘膜和第二栅极绝缘膜设置在栅极电极层和第二栅极绝缘膜之间，氧化物半导体膜，在450℃以上，优选650℃以上的温度进行热处理，然后形成氧化物半导体膜。通过在形成氧化物半导体膜之前在450℃以上的温度下进行热处理，可以减少导致劣化或者晶体管的电特性的变化的氢元素向氧化物半导体膜的扩散，因此晶体管可以具有稳定的电气特性。

10. 发明授权

US11531243B2 Display device and electronic device including the display device 有权
公开(公告)号：US11531243B2
公开(公告)日：2022-12-20
申请号：US17562070
申请日：2021-12-27
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yasuharu Hosaka , Yukinori Shima , Kenichi Okazaki , Shunpei Yamazaki
IPC分类号： G02F1/1368 , G02F1/1333 , G02F1/1362 , H01L27/12 , G02F1/1345 , G02F1/1335 , G02F1/1337
摘要： The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

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