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1. 发明授权

US10500908B2 Semiconductor device, method for manufacturing semiconductor device, tire, and moving object 有权
公开(公告)号：US10500908B2
公开(公告)日：2019-12-10
申请号：US16030961
申请日：2018-07-10
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tomoaki Atsumi , Masayuki Sakakura , Kazuaki Ohshima
IPC分类号： B60C23/04 , B60C23/00 , H01L29/786
CPC分类号： B60C23/0452 , B60C23/009 , B60C23/0428 , B60C23/0454 , H01L29/7869
摘要： To provide a circuit with low power consumption, a semiconductor device with low power consumption, a highly reliable semiconductor device, a tire whose performance is controlled, a moving object whose performance is controlled, or a moving object with a high degree of safety. A tire provided with a semiconductor device is provided. The semiconductor device includes a circuit portion, an antenna, and a sensor element. The circuit portion includes a transistor. The transistor includes an oxide semiconductor. The sensor element is configured to measure the air pressure of the tire.

2. 发明申请

US20130163350A1 LEVEL-SHIFT CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：电平转换电路和半导体集成电路
公开(公告)号：US20130163350A1
公开(公告)日：2013-06-27
申请号：US13713540
申请日：2012-12-13
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kazuaki Ohshima
IPC分类号： H03L5/00 , G11C7/00
CPC分类号： H03L5/00 , G11C7/00 , G11C7/1057 , G11C7/1084 , G11C7/12 , G11C8/08 , G11C11/4074 , H03K19/018521
摘要： A level-shift circuit with simpler circuit structure is provided. The level-shift circuit includes a first transistor in which a first power source potential is applied to a source electrode and a first gate electrode and a second power source potential is applied to a second gate electrode, and an inverter circuit to which a first input signal is applied and either a third power source potential or a potential obtained by subtracting an amount of change in the threshold voltage of the first transistor from the first power source potential is supplied as a power source voltage and from which a first output signal is output. A channel formation region of the first transistor is formed in an oxide semiconductor film.
摘要翻译：提供了一种电路结构更简单的电平移位电路。电平移位电路包括第一晶体管，其中第一电源电位施加到源电极，第一栅电极和第二电源电位施加到第二栅电极;以及反相器电路，第一输入信号被施加，并且提供第三电源电位或通过从第一电源电位减去第一晶体管的阈值电压的变化量而获得的电位作为电源电压，并从其输出第一输出信号。第一晶体管的沟道形成区形成在氧化物半导体膜中。

3. 发明授权

US12041762B2 Semiconductor device or oscillator 有权
公开(公告)号：US12041762B2
公开(公告)日：2024-07-16
申请号：US17612873
申请日：2020-05-19
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kazuaki Ohshima , Hitoshi Kunitake , Takahiro Fukutome
IPC分类号： H01L27/14 , H01L27/12 , H01L29/786 , H10B12/00
CPC分类号： H10B12/00 , H01L27/1225 , H01L27/1255 , H01L29/78648 , H01L29/7869
摘要： A semiconductor device in which temperature dependence is reduced is provided. A switched capacitor is formed using a second transistor, a third transistor, and a second capacitor. Semiconductor layers of the second transistor and the third transistor that include an oxide can reduce temperature dependence. An AC signal supplied to the gates of the second transistor and the third transistor is converted into a DC voltage through the switched capacitor. Note that the level of the DC voltage is adjusted by the levels of the voltages supplied to the back gates of the second transistor and the third transistor.

4. 发明授权

US10061558B2 Data processing device, data processing method, and computer program 有权
公开(公告)号：US10061558B2
公开(公告)日：2018-08-28
申请号：US15446045
申请日：2017-03-01
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kazuaki Ohshima
IPC分类号： G11C19/00 , G11C11/24 , H03K3/037 , G06F5/01 , H03K3/356 , G06F1/16 , H03K19/00 , H03K17/00 , H03K17/04
CPC分类号： G06F5/01 , G06F1/16 , G06F5/015 , G11C11/24 , G11C19/00 , H03K3/037 , H03K3/356 , H03K17/002 , H03K17/04 , H03K19/0002
摘要： A device for temporarily storing data output from a register or data obtained by processing the output data, a processing method therefor, a program, and the like is provided. A circuit (hereinafter, referred to as a selective memory cell) in which a plurality of switches and a signal storing circuit are connected is provided in a data processing device. The selective memory cell can selectively store necessary data. A result of a frequently performed process is stored in the selective memory cell. A process whose result is stored can be performed by only outputting the stored data instead of performing the whole process; thus, input data does not need to be transferred, which can result in a reduction in processing time.

5. 发明授权

US09612795B2 Data processing device, data processing method, and computer program 有权
公开(公告)号：US09612795B2
公开(公告)日：2017-04-04
申请号：US14200433
申请日：2014-03-07
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kazuaki Ohshima
IPC分类号： G11C19/00 , H03K3/037 , G11C11/24 , G06F5/01 , H03K3/356 , H03K17/00 , H03K17/04
CPC分类号： G06F5/01 , G06F1/16 , G06F5/015 , G11C11/24 , G11C19/00 , H03K3/037 , H03K3/356 , H03K17/002 , H03K17/04 , H03K19/0002
摘要： A device for temporarily storing data output from a register or data obtained by processing the output data, a processing method therefor, a program, and the like is provided. A circuit (hereinafter, referred to as a selective memory cell) in which a plurality of switches and a signal storing circuit are connected is provided in a data processing device. The selective memory cell can selectively store necessary data. A result of a frequently performed process is stored in the selective memory cell. A process whose result is stored can be performed by only outputting the stored data instead of performing the whole process; thus, input data does not need to be transferred, which can result in a reduction in processing time.

6. 发明授权

US08861288B2 Level-shift circuit and semiconductor integrated circuit 有权
标题翻译：电平移位电路和半导体集成电路
公开(公告)号：US08861288B2
公开(公告)日：2014-10-14
申请号：US13713540
申请日：2012-12-13
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kazuaki Ohshima
IPC分类号： G11C7/00 , G11C7/12 , G11C5/14 , H03L5/00 , H03K19/0185 , G11C7/10 , G11C11/4074 , G11C8/08
CPC分类号： H03L5/00 , G11C7/00 , G11C7/1057 , G11C7/1084 , G11C7/12 , G11C8/08 , G11C11/4074 , H03K19/018521
摘要： A level-shift circuit with simpler circuit structure is provided. The level-shift circuit includes a first transistor in which a first power source potential is applied to a source electrode and a first gate electrode and a second power source potential is applied to a second gate electrode, and an inverter circuit to which a first input signal is applied and either a third power source potential or a potential obtained by subtracting an amount of change in the threshold voltage of the first transistor from the first power source potential is supplied as a power source voltage and from which a first output signal is output. A channel formation region of the first transistor is formed in an oxide semiconductor film.
摘要翻译：提供了一种电路结构更简单的电平移位电路。电平移位电路包括第一晶体管，其中第一电源电位施加到源电极，第一栅电极和第二电源电位施加到第二栅电极;以及反相器电路，第一输入信号被施加，并且提供第三电源电位或通过从第一电源电位减去第一晶体管的阈值电压的变化量而获得的电位作为电源电压，并从其输出第一输出信号。第一晶体管的沟道形成区形成在氧化物半导体膜中。

7. 发明授权

US11600705B2 Semiconductor device and method for measuring current of semiconductor device 有权
公开(公告)号：US11600705B2
公开(公告)日：2023-03-07
申请号：US16775394
申请日：2020-01-29
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Masashi Tsubuku , Shunpei Yamazaki , Hidetomo Kobayashi , Kazuaki Ohshima , Masashi Fujita , Toshihiko Takeuchi
IPC分类号： H01L29/24 , H01L29/786 , H01L27/12 , H01L21/66 , G01R19/00 , G01R19/08 , H01L27/06 , G01R31/26
摘要： A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), IOFF represents the off-state current, t represents time during which the transistor is off, α and τ are constants, β is a constant that satisfies 0

8. 发明授权

US09647132B2 Semiconductor device and memory device 有权
公开(公告)号：US09647132B2
公开(公告)日：2017-05-09
申请号：US15007259
申请日：2016-01-27
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Masashi Tsubuku , Kazuaki Ohshima , Masashi Fujita , Daigo Shimada , Tsutomu Murakawa
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12 , G11C11/401 , H01L27/1156
CPC分类号： H01L29/7869 , G11C11/401 , H01L27/1156 , H01L27/1225 , H01L27/1255 , H01L29/45 , H01L29/4908 , H01L29/78618 , H01L29/78621 , H01L29/78648 , H01L29/78696
摘要： A semiconductor device that can measure a minute current. The semiconductor device includes a first transistor, a second transistor, a node, and a capacitor. The first transistor includes an oxide semiconductor in a channel formation region. The node is electrically connected to a gate of the second transistor and a first terminal of the capacitor. The node is brought into an electrically floating state by turning off the first transistor after a potential V0 is supplied. Change in a potential VFN of the node over time is expressed by Formula (1). In Formula (1), t is elapsed time after the node is brought into the electrically floating state, τ is a constant with a unit of time, and β is a constant greater than or equal to 0.4 and less than or equal to 0.6. V FN ⁡ ( t ) = V 0 × ⅇ - ( t τ ) β ( 1 )

9. 发明申请

US20170061173A1 Communication Method and Communication System 审中-公开
标题翻译：通信方法与通信系统
公开(公告)号：US20170061173A1
公开(公告)日：2017-03-02
申请号：US15342520
申请日：2016-11-03
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kazuaki Ohshima , Hidetomo KOBAYASHI
IPC分类号： G06K7/10
CPC分类号： G06K7/10158 , G06K7/10366 , G08C17/00
摘要： A command sequence is restarted from the middle even when supply of power supply voltage to an internal circuit in a wireless tag is temporarily stopped (a power flicker occurs). A register or a cache memory included in a signal processing circuit in the wireless tag continues to retain data even after the supply of power supply voltage is stopped. After the power flicker occurs, the signal processing circuit in the wireless tag is returned to the state before the supply of power supply voltage is stopped and can restart signal processing. Consequently, the command sequence can be restarted from the middle.
摘要翻译：即使暂时停止向无线标签中的内部电路供电电源（发生电源闪烁），也从中间重新启动命令序列。包括在无线标签中的信号处理电路中的寄存器或高速缓冲存储器即使在停止供电电压之后也继续保留数据。在发生电源闪烁之后，无线标签中的信号处理电路返回到电源电压停止之前的状态，并且可以重启信号处理。因此，可以从中间重新启动命令序列。

10. 发明授权

US09570445B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09570445B2
公开(公告)日：2017-02-14
申请号：US14339948
申请日：2014-07-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kazuaki Ohshima
IPC分类号： H01L27/108 , H01L27/105 , H01L27/06 , H01L27/092 , H01L27/12 , H03K19/00 , H03K19/177
CPC分类号： H01L27/105 , H01L27/0605 , H01L27/0688 , H01L27/092 , H01L27/108 , H01L27/1203 , H03K19/0013 , H03K19/1776 , H03K19/17772
摘要： A semiconductor device having a novel structure is provided. The semiconductor device includes a first p-type transistor, a second n-type transistor, a third transistor, and a fourth transistor. One of a source and a drain of the third transistor is connected to a wiring supplying first potential, and the other is connected to one of a source and a drain of the first transistor. One of a source and a drain of the second transistor is connected to the other of the source and the drain of the first transistor, and the other is connected to one of a source and a drain of the fourth transistor. The other of the source and the drain of the fourth transistor is connected to a wiring supplying second potential lower than the first potential. An oxide semiconductor material is used in channel formation regions of the third transistor and the fourth transistor.
摘要翻译：提供具有新颖结构的半导体器件。半导体器件包括第一p型晶体管，第二n型晶体管，第三晶体管和第四晶体管。第三晶体管的源极和漏极之一连接到提供第一电位的布线，另一个连接到第一晶体管的源极和漏极之一。第二晶体管的源极和漏极之一连接到第一晶体管的源极和漏极中的另一个，另一个连接到第四晶体管的源极和漏极之一。第四晶体管的源极和漏极中的另一个连接到提供低于第一电位的第二电位的布线。在第三晶体管和第四晶体管的沟道形成区域中使用氧化物半导体材料。

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