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1. 发明申请

US20180294304A1 IMAGE SENSORS WITH VERTICALLY STACKED PHOTODIODES AND VERTICAL TRANSFER GATES 审中-公开
公开(公告)号：US20180294304A1
公开(公告)日：2018-10-11
申请号：US15480076
申请日：2017-04-05
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Johan Camiel Julia JANSSENS , Manuel H. INNOCENT , Sergey VELICHKO , Tomas GEURTS
IPC分类号： H01L27/146 , H04N5/374 , H04N5/378
摘要： Image sensors may include multiple vertically stacked photodiodes interconnected using vertical deep trench transfer gates. A first n-epitaxial layer may be formed on a residual substrate; a first p-epitaxial layer may be formed on the first n-epitaxial layer; a second n-epitaxial layer may be formed on the first p-epitaxial layer; a second p-epitaxial layer may be formed on the second n-epitaxial layer; and so on. The n-epitaxial layers may serve as accumulation regions for the different epitaxial photodiodes. A separate color filter array is not needed. The vertical transfer gates may be a deep trench that is filled with doped conductive material, lined with gate dielectric liner, and surrounded by a p-doped region. Image sensors formed in this way may be used to support a rolling shutter configuration or a global shutter configuration and can either be front-side illuminated or backside illuminated.

2. 发明申请

US20170062501A1 BACK-SIDE ILLUMINATED PIXELS WITH INTERCONNECT LAYERS 有权
标题翻译：具有互连层的背面照明像素
公开(公告)号：US20170062501A1
公开(公告)日：2017-03-02
申请号：US14836599
申请日：2015-08-26
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Sergey VELICHKO , Christopher SILSBY
IPC分类号： H01L27/146
CPC分类号： H01L27/14612 , H01L27/14629 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/1469
摘要： An imaging pixel may be provided with an upper substrate layer, a lower substrate layer, a floating diffusion region in the upper substrate layer, and a photodiode in the upper substrate layer that is coupled to the floating diffusion region. The imaging pixel may also include a source follower transistor in the lower substrate layer and an interconnect layer in between the upper substrate layer and the lower substrate layer. The interconnect layer may couple the floating diffusion region directly to the source follower transistor. The imaging pixel may include a reset transistor in the upper substrate layer. The imaging pixel may include a metal layer in the lower substrate layer, a transfer transistor in the upper substrate layer, and an interconnect layer that couples the transfer transistor to the metal layer.
摘要翻译：成像像素可以设置有上基板层，下基板层，上基板层中的浮动扩散区域和耦合到浮动扩散区域的上基板层中的光电二极管。成像像素还可以包括下基板层中的源极跟随器晶体管和上基板层和下基板层之间的互连层。互连层可以将浮动扩散区域直接耦合到源极跟随器晶体管。成像像素可以包括上基板层中的复位晶体管。成像像素可以包括下基板层中的金属层，上基板层中的传输晶体管，以及将传输晶体管耦合到金属层的互连层。

3. 发明公开

US20240259705A1 Image Sensors with Extended Dynamic Range 审中-公开
公开(公告)号：US20240259705A1
公开(公告)日：2024-08-01
申请号：US18360972
申请日：2023-07-28
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Sergey VELICHKO
IPC分类号： H04N25/571 , H04N25/78
CPC分类号： H04N25/571 , H04N25/78
摘要： An image sensor may include an array of imaging pixels arranged in rows and columns. A method of operating an imaging pixel is provided that includes accumulating charge in a photosensitive element, allowing the accumulated charge in the photodiode to overflow into a capacitor that is coupled to a reset transistor having a gate terminal configured to receive a reset control signal during an integration phase, and extending the dynamic range of the imaging pixel by dynamically adjusting the reset control signal from a first voltage level to a second voltage level during the integration phase. The reset control signal can be lowered from the first voltage level to the second voltage level in a discrete or continuous fashion such that a portion of the overflow charge in the capacitor represents a linear signal and a portion of the overflow charge in the capacitor represents a non-linear signal.

4. 发明申请

US20220210353A1 HIGH DYNAMIC RANGE IMAGE SENSORS 有权
公开(公告)号：US20220210353A1
公开(公告)日：2022-06-30
申请号：US17137860
申请日：2020-12-30
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Sergey VELICHKO
IPC分类号： H04N5/355 , H04N5/378
摘要： An image sensor may include an image sensor pixel array, row control circuitry, and column readout circuitry. Pixels in the image sensor pixel array may each include multiple photosensitive elements disposed around one another. Each pixel may also include first and second in-pixel memory configured to store corresponding overflow charge from first and second photosensitive elements, respectively. The first photosensitive element may be a large photodiode while the second photosensitive element may be a small photodiode. If desired, the large photodiode may be implemented as a set of split but interconnected photodiodes. If desired, each pixel may also include a medium photodiode.

5. 发明申请

US20180294305A1 IMAGE SENSORS WITH VERTICALLY STACKED PHOTODIODES AND VERTICAL TRANSFER GATES 审中-公开
公开(公告)号：US20180294305A1
公开(公告)日：2018-10-11
申请号：US15480078
申请日：2017-04-05
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Johan Camiel Julia JANSSENS , Manuel H. INNOCENT , Sergey VELICHKO , Tomas GEURTS
IPC分类号： H01L27/146 , H04N5/374 , H04N5/378
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14614 , H01L27/1463 , H01L27/14636 , H01L27/14638 , H01L27/1464 , H01L27/14647 , H01L27/14652 , H01L27/14689 , H04N5/374 , H04N5/378
摘要： Image sensors may include multiple vertically stacked photodiodes interconnected using vertical deep trench transfer gates. A first n-epitaxial layer may be formed on a residual substrate; a first p-epitaxial layer may be formed on the first n-epitaxial layer; a second n-epitaxial layer may be formed on the first p-epitaxial layer; a second p-epitaxial layer may be formed on the second n-epitaxial layer; and so on. The n-epitaxial layers may serve as accumulation regions for the different epitaxial photodiodes. A separate color filter array is not needed. The vertical transfer gates may be a deep trench that is filled with doped conductive material, lined with gate dielectric liner, and surrounded by a p-doped region. Image sensors formed in this way may be used to support a rolling shutter configuration or a global shutter configuration and can either be front-side illuminated or backside illuminated.

6. 发明申请

US20180115730A1 IMAGE SENSOR PIXELS WITH OVERFLOW CAPABILITIES 审中-公开
公开(公告)号：US20180115730A1
公开(公告)日：2018-04-26
申请号：US15333407
申请日：2016-10-25
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Sergey VELICHKO
IPC分类号： H04N5/378 , H04N5/225 , H04N5/232 , H04N5/353
CPC分类号： H04N5/378 , H01L27/14627 , H01L27/14641 , H01L27/14656 , H04N5/2253 , H04N5/2254 , H04N5/23245 , H04N5/3532 , H04N5/35554 , H04N5/35581 , H04N5/3559 , H04N5/359 , H04N5/37452 , H04N5/37457
摘要： An image sensor pixel may include multiple split photodiodes that are covered by a single microlens. The image sensor may include a charge overflow capacitor coupled to a pixel charge storage within the image sensor via a gain control transistor. The image sensor pixel may have phase detection capabilities in a first mode of operation enabled by comparing phase signals generated from the split photodiodes. The image sensor pixel also may generate and readout image signals simultaneously in both rolling shutter operations and global shutter operations in a second mode of operation. The image sensor pixel may also generate an image using a linear combination of at least two signals read out using the charge overflow capacitor and light flickering mitigation operations. The image may be a high dynamic range image that is generated from at least a low exposure signal and a high exposure signal.

7. 发明申请

US20210289154A1 HIGH DYNAMIC RANGE IMAGING PIXELS WITH CHARGE OVERFLOW 有权
公开(公告)号：US20210289154A1
公开(公告)日：2021-09-16
申请号：US16814771
申请日：2020-03-10
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Richard Scott JOHNSON , Sergey VELICHKO
IPC分类号： H04N5/355 , H04N5/378 , H04N5/353
摘要： A high dynamic range imaging pixel may include a photodiode, an overflow node, and an overflow path between the photodiode and the overflow node. The imaging pixel may have an overlapping overflow integration time and photodiode integration time. The overflow integration time may be shorter than the photodiode integration time. At the end of the overflow integration time, an uncorrelated double sample of overflow charge may be obtained. The capacity of the photodiode is then increased and charge continues to accumulate in the photodiode until the conclusion of the photodiode integration time. A correlated double sample of charge from the photodiode may then be obtained. For additional increases to dynamic range, the overflow charge may be repeatedly sampled and reset throughout the overflow integration time, effectively increasing the overflow capacity. The overflow samples may be integrated on a buffer to track the total overflow charge.

8. 发明申请

US20210014438A1 METHODS AND CIRCUITRY FOR IMPROVING GLOBAL SHUTTER EFFICIENCY IN BACKSIDE ILLUMINATED HIGH DYNAMIC RANGE IMAGE SENSOR PIXELS 有权
公开(公告)号：US20210014438A1
公开(公告)日：2021-01-14
申请号：US16661009
申请日：2019-10-23
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Dajiang YANG , Sergey VELICHKO , Bartosz Piotr BANACHOWICZ , Tomas GEURTS , Muhammad Maksudur RAHMAN
IPC分类号： H04N5/355 , H01L27/146
摘要： An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.

9. 发明申请

US20170244921A1 IMAGE SENSORS HAVING HIGH-EFFICIENCY CHARGE STORAGE CAPABILITIES 有权
公开(公告)号：US20170244921A1
公开(公告)日：2017-08-24
申请号：US15174649
申请日：2016-06-06
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Sergey VELICHKO
IPC分类号： H04N5/378 , H01L49/02 , H04N5/359 , H01L27/146 , H04N5/3745 , H04N5/363
CPC分类号： H04N5/378 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14636 , H01L28/40 , H04N5/3559 , H04N5/3597 , H04N5/361 , H04N5/363 , H04N5/37452 , H04N5/37455 , H04N5/37457
摘要： An image pixel may include a photodiode, storage node, floating diffusion, and capacitor. A first transistor may be coupled between the photodiode and the storage node. A second transistor may be coupled between the storage node and the floating diffusion. A third transistor may be coupled between the capacitor and the floating diffusion. A potential barrier may be formed between the storage node and the capacitor. The potential barrier may exhibit a potential that is between the potential of the photodiode and the potential of the charge storage node. The potential barrier may transfer an overflow portion of image charge from the storage node to the capacitor. The third transistor may transfer the overflow charge from the capacitor to the floating diffusion. The capacitor may shield the storage node from image light or may reflect at least some of the image light towards the photodiode.

10. 发明申请

US20160345005A1 METHODS AND APPARATUS FOR GENERATING TEST AND OVERLAY PATTERNS IN IMAGE SENSORS 审中-公开
标题翻译：用于在图像传感器中产生测试和覆盖图案的方法和装置
公开(公告)号：US20160345005A1
公开(公告)日：2016-11-24
申请号：US14717750
申请日：2015-05-20
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Cornelis HOEKSTRA , Jeffery BECK , Sergey VELICHKO
IPC分类号： H04N17/00 , H04N5/374
CPC分类号： H04N17/002 , H04N5/3592 , H04N5/374 , H04N5/3745
摘要： An imaging system may include an image sensor having a pixel array. The pixel array may receive test signals from multiplexers located at the top or bottom of each column of the array. Test signals may be provided to each column based on a predefined test pattern. In some arrangements, pixel array photodiodes may receive test signals through an anti-blooming transistor while the anti-blooming transistor is on. In other arrangements, dark current of photodiodes in the pixel array may be modulated by voltages applied to the drain of an anti-blooming transistor while the anti-blooming transistor is off. In other arrangements, pixel array photodiodes may receive test signals through a reset transistor. Arbitrary test patterns may be applied to determine photodiode or floating diffusion node leakage and incorrect pixel control voltages. Arbitrary patterns may also be superimposed on light-based image data in the manner of a watermark.
摘要翻译：成像系统可以包括具有像素阵列的图像传感器。像素阵列可以从位于阵列的每列的顶部或底部的多路复用器接收测试信号。可以基于预定义的测试模式向每列提供测试信号。在一些布置中，像素阵列光电二极管可以通过防喷射晶体管接收测试信号，同时防喷射晶体管导通。在其他布置中，像素阵列中的光电二极管的暗电流可以通过施加到防喷射晶体管的漏极的电压进行调制，同时防溢出晶体管截止。在其他布置中，像素阵列光电二极管可以通过复位晶体管接收测试信号。可以应用任意测试模式来确定光电二极管或浮动扩散节点泄漏和不正确的像素控制电压。任意图案也可以以水印的方式叠加在基于光的图像数据上。

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