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1. 发明授权

US08873285B2 Simultaneous multi-level binary search in non-volatile storage 有权
标题翻译：在非易失性存储中同时进行多级二进制搜索
公开(公告)号：US08873285B2
公开(公告)日：2014-10-28
申请号：US13937983
申请日：2013-07-09
申请人： SanDisk IL Ltd.
发明人： Eran Sharon , Yan Li , Nima Mokhlesi
IPC分类号： G11C11/34 , G11C16/34 , G11C11/56 , G11C16/04
CPC分类号： G11C16/3459 , G11C11/5642 , G11C16/0483 , G11C16/3454 , G11C2211/5624 , G11C2211/5631
摘要： Methods and devices for simultaneously verifying or reading multiple states in non-volatile storage are disclosed. Methods and devices for efficiently reducing or eliminating cross-coupling effects in non-volatile storage are disclosed. Methods and devices for efficiently performing reads at a number of voltages to search for the threshold voltage of a memory cell are disclosed. Memory cells on different NAND strings that are read at the same time may be tested for different threshold voltage levels. Memory cells may be tested for different threshold voltages by applying different gate-to-source voltages to memory cells being tested for different threshold voltages. Memory cells may be tested for different threshold voltages by applying different drain to source voltages to the memory cells. Different amounts of compensation for cross-coupling affects may be applied to memory cells on different NAND strings that are read or programmed at the same time. A binary search may be performed.
摘要翻译：公开了用于同时验证或读取非易失性存储器中的多个状态的方法和装置。公开了用于有效地减少或消除非易失性存储器中的交叉耦合效应的方法和装置。公开了用于有效执行多个电压读取以搜索存储器单元的阈值电压的方法和装置。可以在不同的NAND串上同时读取的存储单元测试不同的阈值电压电平。可以通过对不同阈值电压进行测试的存储器单元施加不同的栅极至源极电压来对不同的阈值电压测试存储器单元。可以通过对存储器单元施加不同的漏极到源极电压来对不同的阈值电压测试存储器单元。交叉耦合影响的不同量的补偿可以应用于同时读取或编程的不同NAND串上的存储单元。可以执行二进制搜索。

2. 发明申请

US20140269066A1 METHODS FOR EXTENDING THE EFFECTIVE VOLTAGE WINDOW OF A MEMORY CELL 有权
公开(公告)号：US20140269066A1
公开(公告)日：2014-09-18
申请号：US14289763
申请日：2014-05-29
申请人： SANDISK IL LTD.
发明人： Eran Sharon
IPC分类号： G11C16/26
CPC分类号： G11C16/26 , G11C11/5628 , G11C11/5642
摘要： Methods for operating a non-volatile storage system in which cross-coupling effects are utilized to extend the effective threshold voltage window of a memory cell and to embed additional information within the extended threshold voltage window are described. In some cases, additional information may be embedded within a memory cell storing the highest programming state if the memory cell is in a high boosting environment by splitting the highest programming state into two substates and programming the memory cell to one of the two substates based on the additional information. A memory cell may be in a high boosting environment if its neighboring memory cells are in a high programmed state. Additional information may also be embedded within a memory cell storing the lowest programming state if the memory cell is in a low boosting environment. The additional information may include error correction information.

3. 再颁专利

USRE46573E1 Simultaneous multi-state read or verify in non-volatile storage 有权
公开(公告)号：USRE46573E1
公开(公告)日：2017-10-17
申请号：US14285426
申请日：2014-05-22
申请人： SanDisk IL Ltd.
发明人： Eran Sharon , Yan Li , Nima Mokhlesi
IPC分类号： G11C16/04 , G11C16/06 , G11C11/56 , G11C16/34
CPC分类号： G11C16/3459 , G11C11/5642 , G11C16/0483 , G11C16/3454 , G11C2211/5624 , G11C2211/5631
摘要： Methods and devices for simultaneously verifying or reading multiple states in non-volatile storage are disclosed. Methods and devices for efficiently reducing or eliminating cross-coupling effects in non-volatile storage are disclosed. Methods and devices for efficiently performing reads at a number of voltages to search for the threshold voltage of a memory cell are disclosed. Memory cells on different NAND strings that are read at the same time may be tested for different threshold voltage levels. Memory cells may be tested for different threshold voltages by applying different gate-to-source voltages to memory cells being tested for different threshold voltages. Memory cells may be tested for different threshold voltages by applying different drain to source voltages to the memory cells. Different amounts of compensation for cross-coupling affects may be applied to memory cells on different NAND strings that are read or programmed at the same time.

4. 发明授权

US09236134B2 Methods for extending the effective voltage window of a memory cell 有权
公开(公告)号：US09236134B2
公开(公告)日：2016-01-12
申请号：US14289763
申请日：2014-05-29
申请人： SANDISK IL LTD.
发明人： Eran Sharon
IPC分类号： G11C19/08 , G11C16/26 , G11C11/56
CPC分类号： G11C16/26 , G11C11/5628 , G11C11/5642
摘要： Methods for operating a non-volatile storage system in which cross-coupling effects are utilized to extend the effective threshold voltage window of a memory cell and to embed additional information within the extended threshold voltage window are described. In some cases, additional information may be embedded within a memory cell storing the highest programming state if the memory cell is in a high boosting environment by splitting the highest programming state into two substates and programming the memory cell to one of the two substates based on the additional information. A memory cell may be in a high boosting environment if its neighboring memory cells are in a high programmed state. Additional information may also be embedded within a memory cell storing the lowest programming state if the memory cell is in a low boosting environment. The additional information may include error correction information.

5. 发明申请

US20140362646A1 READING SOFT BITS SIMULTANEOUSLY 有权
标题翻译：同时阅读软件
公开(公告)号：US20140362646A1
公开(公告)日：2014-12-11
申请号：US14468205
申请日：2014-08-25
申请人： SanDisk IL Ltd.
发明人： Eran Sharon , Yan Li , Nima Mokhlesi
IPC分类号： G11C16/34 , G11C16/04
CPC分类号： G11C16/3459 , G11C11/5642 , G11C16/0483 , G11C16/3454 , G11C2211/5624 , G11C2211/5631
摘要： Methods and devices for simultaneously verifying or reading multiple states in non-volatile storage are disclosed. Methods and devices for efficiently reducing or eliminating cross-coupling effects in non-volatile storage are disclosed. Methods and devices for efficiently performing reads at a number of voltages to search for the threshold voltage of a memory cell are disclosed. Memory cells on different NAND strings that are read at the same time may be tested for different threshold voltage levels. Memory cells may be tested for different threshold voltages by applying different gate-to-source voltages to memory cells being tested for different threshold voltages. Memory cells may be tested for different threshold voltages by applying different drain to source voltages to the memory cells. Different amounts of compensation for cross-coupling affects may be applied to memory cells on different NAND strings that are read or programmed at the same time. A binary search may be performed.
摘要翻译：公开了用于同时验证或读取非易失性存储器中的多个状态的方法和装置。公开了用于有效地减少或消除非易失性存储器中的交叉耦合效应的方法和装置。公开了用于有效执行多个电压读取以搜索存储器单元的阈值电压的方法和装置。可以在不同的NAND串上同时读取的存储单元测试不同的阈值电压电平。可以通过对不同阈值电压进行测试的存储器单元施加不同的栅极至源极电压来对不同的阈值电压测试存储器单元。可以通过对存储器单元施加不同的漏极到源极电压来对不同的阈值电压测试存储器单元。交叉耦合影响的不同量的补偿可以应用于同时读取或编程的不同NAND串上的存储单元。可以执行二进制搜索。

6. 发明授权

US09070475B2 Reading soft bits simultaneously 有权
标题翻译：同时读软件
公开(公告)号：US09070475B2
公开(公告)日：2015-06-30
申请号：US14468205
申请日：2014-08-25
申请人： SanDisk IL Ltd.
发明人： Eran Sharon , Yan Li , Nima Mokhlesi
IPC分类号： G11C11/34 , G11C16/34 , G11C11/56 , G11C16/04
CPC分类号： G11C16/3459 , G11C11/5642 , G11C16/0483 , G11C16/3454 , G11C2211/5624 , G11C2211/5631
摘要： Methods and devices for simultaneously verifying or reading multiple states in non-volatile storage are disclosed. Methods and devices for efficiently reducing or eliminating cross-coupling effects in non-volatile storage are disclosed. Methods and devices for efficiently performing reads at a number of voltages to search for the threshold voltage of a memory cell are disclosed. Memory cells on different NAND strings that are read at the same time may be tested for different threshold voltage levels. Memory cells may be tested for different threshold voltages by applying different gate-to-source voltages to memory cells being tested for different threshold voltages. Memory cells may be tested for different threshold voltages by applying different drain to source voltages to the memory cells. Different amounts of compensation for cross-coupling affects may be applied to memory cells on different NAND strings that are read or programmed at the same time. A binary search may be performed.
摘要翻译：公开了用于同时验证或读取非易失性存储器中的多个状态的方法和装置。公开了用于有效地减少或消除非易失性存储器中的交叉耦合效应的方法和装置。公开了用于有效执行多个电压读取以搜索存储器单元的阈值电压的方法和装置。可以在不同的NAND串上同时读取的存储单元测试不同的阈值电压电平。可以通过对不同阈值电压进行测试的存储器单元施加不同的栅极至源极电压来对不同的阈值电压测试存储器单元。可以通过对存储器单元施加不同的漏极到源极电压来对不同的阈值电压测试存储器单元。交叉耦合影响的不同量的补偿可以应用于同时读取或编程的不同NAND串上的存储单元。可以执行二进制搜索。

7. 发明申请

US20130294169A1 SIMULTANEOUS MULTI-LEVEL BINARY SEARCH IN NON-VOLATILE STORAGE 有权
标题翻译：同时在非易失性存储中同时进行多级二进制搜索
公开(公告)号：US20130294169A1
公开(公告)日：2013-11-07
申请号：US13937983
申请日：2013-07-09
申请人： SanDisk IL Ltd.
发明人： Eran Sharon , Yan Li , Nima Mokhlesi
IPC分类号： G11C16/34
CPC分类号： G11C16/3459 , G11C11/5642 , G11C16/0483 , G11C16/3454 , G11C2211/5624 , G11C2211/5631
摘要： Methods and devices for simultaneously verifying or reading multiple states in non-volatile storage are disclosed. Methods and devices for efficiently reducing or eliminating cross-coupling effects in non-volatile storage are disclosed. Methods and devices for efficiently performing reads at a number of voltages to search for the threshold voltage of a memory cell are disclosed. Memory cells on different NAND strings that are read at the same time may be tested for different threshold voltage levels. Memory cells may be tested for different threshold voltages by applying different gate-to-source voltages to memory cells being tested for different threshold voltages. Memory cells may be tested for different threshold voltages by applying different drain to source voltages to the memory cells. Different amounts of compensation for cross-coupling affects may be applied to memory cells on different NAND strings that are read or programmed at the same time. A binary search may be performed.
摘要翻译：公开了用于同时验证或读取非易失性存储器中的多个状态的方法和装置。公开了用于有效地减少或消除非易失性存储器中的交叉耦合效应的方法和装置。公开了用于有效执行多个电压读取以搜索存储器单元的阈值电压的方法和装置。可以在不同的NAND串上同时读取的存储单元测试不同的阈值电压电平。可以通过对不同阈值电压进行测试的存储器单元施加不同的栅极至源极电压来对不同的阈值电压测试存储器单元。可以通过对存储器单元施加不同的漏极到源极电压来对不同的阈值电压测试存储器单元。交叉耦合影响的不同量的补偿可以应用于同时读取或编程的不同NAND串上的存储单元。可以执行二进制搜索。

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