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1. 发明授权

US10422064B2 Washing apparatus and control method for the same 有权
公开(公告)号：US10422064B2
公开(公告)日：2019-09-24
申请号：US15436101
申请日：2017-02-17
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Su Jin Seong , Hyun Sook Kim , Woo Kyung Jung , Ja Yeon Seo , Seung-Mok Lee , Yu Ri Lee , Jong Ho Lee , Yong Mi Jung
IPC分类号： D06F33/02 , D06F39/14 , D06F23/06 , D06F37/22 , D06F37/30 , D06F37/36 , D06F39/00 , D06F39/02 , D06F39/08
摘要： A washing apparatus and control method where the washing apparatus comprises a door configured to open and close the entrance; a tub inside a main body; a diaphragm configured to connect the entrance with the opening; and a drum rotatably provided inside the tub. The washing apparatus includes a door washing nozzle to inject water for a first time in a first section and then to inject the water for a second time in a second section when a washing mode of the diaphragm is entered. The washing mode of the diaphragm including the first section in which the drum in a stopped state is accelerated to arrive at a first target rotation speed less than a second target rotation speed and the second section in which the drum at the first target rotation speed is accelerated to arrive at the second target rotation speed.

2. 发明授权

US12094976B2 Semiconductor device 有权
公开(公告)号：US12094976B2
公开(公告)日：2024-09-17
申请号：US17558967
申请日：2021-12-22
申请人： Samsung Electronics Co., Ltd.
发明人： Deok Han Bae , Ju Hun Park , Myung Yoon Um , Yu Ri Lee , In Yeal Lee
IPC分类号： H01L29/78 , H01L29/08
CPC分类号： H01L29/7851 , H01L29/0847
摘要： A semiconductor device includes a first fin-shaped pattern which extends lengthwise in a first direction, a second fin-shaped pattern which is spaced apart from the first fin-shaped pattern in a second direction and extends lengthwise in the first direction, a first gate electrode extending lengthwise in the second direction on the first fin-shaped pattern, a second gate electrode extending lengthwise in the second direction on the second fin-shaped pattern, a first gate separation structure which separates the first gate electrode and the second gate electrode and is at the same vertical level as the first gate electrode and the second gate electrode, and a first source/drain contact extending lengthwise in the second direction on the first fin-shaped pattern and the second fin-shaped pattern. The first source/drain contact includes a first lower source/drain contact region which intersects the first fin-shaped pattern and the second fin-shaped pattern, and a first upper source/drain contact region which protrudes from the first lower source/drain contact region, and the first upper source/drain contact region does not overlap the first gate separation structure in the first direction.

3. 发明申请

US20170241060A1 WASHING APPARATUS AND CONTROL METHOD FOR THE SAME 有权
公开(公告)号：US20170241060A1
公开(公告)日：2017-08-24
申请号：US15436101
申请日：2017-02-17
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Su Jin SEONG , Hyun Sook Kim , Woo Kyung Jung , Ja Yeon Seo , Seung-Mok Lee , Yu Ri Lee , Jong Ho Lee , Yong Mi Jung
IPC分类号： D06F33/02 , D06F37/36 , D06F23/06 , D06F39/08 , D06F39/00 , D06F37/22 , D06F39/02 , D06F37/30 , D06F39/14
摘要： A washing apparatus and control method where the washing apparatus comprises a door configured to open and close the entrance; a tub inside a main body and having an opening corresponding to an entrance to the main body; a diaphragm configured to connect the entrance with the opening; a drum rotatably provided inside the tub; a door washing nozzle provided on the diaphragm to inject washing water to the door. The door washing nozzle is controlled to inject the washing water for a first time in a first section and inject the washing water for a second time in a second section when a washing mode of the diaphragm including the first section at which the drum in a stopped state arrives at a first target rotation speed and the second section at which the drum rotated at the first target rotation speed arrives at a second target rotation speed.

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