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    • 6. 发明授权
    • Semiconductor light emitting devices
    • 半导体发光器件
    • US09431578B2
    • 2016-08-30
    • US14152128
    • 2014-01-10
    • Samsung Electronics Co., Ltd.
    • Myong Soo ChoTae Hun KimYoung Ho RyuYoung Chul ShinDong Myung Shin
    • H01L33/00H01L33/38
    • H01L33/382
    • In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes a second electrode connected to the second conductivity-type semiconductor layer.
    • 在一个示例性实施例中,半导体发光器件包括包括第一导电类型半导体层,有源层和第二导电类型半导体层的发光结构。 所述第二导电型半导体层和所述有源层具有暴露所述第一导电型半导体层的区域的至少一个接触孔。 半导体发光器件还包括设置在至少一个接触孔内的第一导电类型半导体层的暴露区域中的至少一个柱状结构。 半导体发光器件还包括设置在其中设置有至少一个柱状结构的第一导电类型半导体层的暴露区域上的第一电极,第一电极连接到第一导电型半导体层。 半导体发光器件还包括连接到第二导电类型半导体层的第二电极。