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1. 发明申请

US20180308288A1 SYSTEM AND METHOD FOR TWO DIMENSIONAL APPLICATION USAGE IN THREE DIMENSIONAL VIRTUAL REALITY ENVIRONMENT 审中-公开
公开(公告)号：US20180308288A1
公开(公告)日：2018-10-25
申请号：US15896913
申请日：2018-02-14
申请人： Samsung Electronics, Co. Ltd.
发明人： Philippe Harscoet , Kihwan Choi , YoonJeong Heo , Ku In Seog , Joungsoo Lee
IPC分类号： G06T19/00 , G02B27/01 , G06F3/01 , G06F3/0481 , G06T11/00
CPC分类号： G06T19/006 , G02B27/017 , G06F3/011 , G06F3/04815 , G06T11/00
摘要： An electronic mobile device having a physical display, at least one processor, a volatile memory, and non-volatile memory. Stored in the volatile memory are first instructions for generating a 2D user interface and second instructions for generating a 3D VR environment, and system instructions. In a first operation, the first instructions are executed to generate the 2D user interface and provide the 2D user interface to the physical display. In a second operation, the first instructions are executed to generate the 2D user interface and provide the 2D user interface to a virtual display in the volatile memory. Also, in the second operation, the second instructions are executed to generate the 3D VR environment so as to obtain the 2D user interface from the virtual display and render a 3D image using at least part of the 2D user interface, and provide the 3D image to the physical display.

2. 发明授权

US09064545B2 Nonvolatile memory device having adjustable program pulse width 有权
标题翻译：具有可调程序脉冲宽度的非易失性存储器件
公开(公告)号：US09064545B2
公开(公告)日：2015-06-23
申请号：US13721859
申请日：2012-12-20
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Yongsung Cho , Kihwan Choi , Il Han Park , Kiwhan Song , Sangyong Yoon
IPC分类号： G11C16/04 , G11C7/04 , G11C16/10
CPC分类号： G11C7/04 , G11C16/0483 , G11C16/10
摘要： A method of programming a nonvolatile memory device comprises determining a temperature condition of the nonvolatile memory device, determining a program pulse period according to the temperature condition, supplying a program voltage to a selected word line using the program pulse period, and supplying a pass voltage to unselected word lines while supplying the program voltage to the selected word line.
摘要翻译：非易失性存储器件的编程方法包括：确定非易失性存储器件的温度状态，根据温度条件确定编程脉冲周期，使用编程脉冲周期向选定字线提供编程电压，并提供通过电压在将程序电压提供给所选择的字线的同时，将其作为未选择的字线。

3. 发明授权

US11189071B2 Electronic device for providing avatar animation and method thereof 有权
公开(公告)号：US11189071B2
公开(公告)日：2021-11-30
申请号：US16778118
申请日：2020-01-31
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jongpil Park , Yunhyeong Kim , Jaeeun Yang , Kihwan Choi , Chanmin Park , Jungeun Lee
IPC分类号： G06T13/40 , G06T1/60 , G06F3/01 , G06F3/041
摘要： An electronic device includes a display, at least one sensor, a processor operatively connected to the display and the at least one sensor, and a memory operatively connected to the processor. The memory stores instructions that, when executed, cause the processor to control the electronic device to obtain a first input associated with generation of a first avatar animation, to obtain first data for a first object based on the obtained first input, to obtain second data for a second object based on the obtained first input and a specified scheme, to generate the first avatar animation based on the first data and the second data, and to display the first avatar animation.

4. 发明授权

US10754546B2 Electronic device and method for executing function using input interface displayed via at least portion of content 有权
公开(公告)号：US10754546B2
公开(公告)日：2020-08-25
申请号：US16161240
申请日：2018-10-16
申请人： Samsung Electronics Co., Ltd.
发明人： Ilhoe Jung , Kihwan Choi , Jinjoo Park , Daemyung Kim , Haksoo Kim , Yoonjeong Heo , Min-Jung Kim , Ji-Yoon Park
IPC分类号： G09G5/00 , G06F3/0488 , G06F3/0484 , G06F3/01 , G06F3/0481 , G09G5/38 , G09G5/377 , G06F3/02
摘要： An electronic device and method are disclosed. The electronic device includes a display and a processor, which implements the method, including: displaying virtual reality image, a virtual keyboard including a plurality of keys indicating a plurality of characters, and a representation of an external electronic device superimposed on the virtual reality image, wherein the virtual keyboard is displayed in a virtual touch pad area of the representation corresponding to a touch pad of the external electronic device, receiving information regarding a first touch input, transmitted from the external electronic device in response to detecting the first touch input on the touch pad, identifying, using the received information, a key corresponding to the first touch input from among the plurality of keys, and displaying, in at least a portion of the virtual reality image, a character indicated by the identified key on at least portion of the image.

5. 发明授权

US09183924B2 Methods of operating nonvolatile memory devices that support efficient error detection 有权
公开(公告)号：US09183924B2
公开(公告)日：2015-11-10
申请号：US14712939
申请日：2015-05-15
申请人： Samsung Electronics Co., Ltd.
发明人： Ji-Sang Lee , Moosung Kim , Kihwan Choi
IPC分类号： G11C29/00 , G11C11/56 , G11C16/34 , G06F11/10
CPC分类号： G11C11/5635 , G06F11/1048 , G11C11/5628 , G11C11/5642 , G11C16/02 , G11C16/0483 , G11C16/3413 , G11C16/3436 , G11C16/3454 , G11C29/04 , G11C2029/0411 , G11C2211/5621
摘要： Methods of operating nonvolatile memory devices may include identifying one or more multi-bit nonvolatile memory cells in a nonvolatile memory device that have undergone unintentional programming from an erased state to an at least partially programmed state. Errors generated during an operation to program a first plurality of multi-bit nonvolatile memory cells may be detected by performing a plurality of reading operations to generate error detection data and then decoding the error detection data to identify specific cells having errors. A programmed first plurality of multi-bit nonvolatile memory cells and a force-bit data vector, which was modified during the program operation, may be read to support error detection. This data, along with data read from a page buffer associated with the first plurality of multi-bit nonvolatile memory cells, may then be decoded to identify which of the first plurality of multi-bit nonvolatile memory cells are unintentionally programmed cells.

6. 发明申请

US20150052294A1 NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF 有权
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US20150052294A1
公开(公告)日：2015-02-19
申请号：US14458771
申请日：2014-08-13
申请人： Samsung Electronics Co., Ltd.
发明人： Yongsung Cho , Ohsuk Kwon , Kihwan Choi
IPC分类号： G11C16/24 , G06F12/02 , G11C16/10 , G11C16/26 , G11C16/34
CPC分类号： G11C16/24 , G06F12/0246 , G06F2212/7201 , G11C16/08 , G11C16/10 , G11C16/26 , G11C16/3459
摘要： An operating method of a nonvolatile memory device includes receiving a read command from a memory controller; determining a read mode based on the received read command, controlling a precharge time and an offset of a precharge control signal according to the determination result, and precharging a sensing bit line among bit lines to a precharge voltage based on the controlled precharge control signal. The sensing bit line is a bit line being precharged according to the determined read mode among the bit lines.
摘要翻译：非易失性存储器件的操作方法包括从存储器控制器接收读取命令; 基于接收到的读取命令确定读取模式，根据确定结果控制预充电控制信号的预充电时间和偏移量，以及基于受控的预充电控制信号将位线之间的感测位线预充电为预充电电压。感测位线是根据位线中确定的读取模式预充电的位线。

7. 发明申请

US20130223156A1 NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME 审中-公开
标题翻译：非易失性存储器件和包括其的存储器系统
公开(公告)号：US20130223156A1
公开(公告)日：2013-08-29
申请号：US13721892
申请日：2012-12-20
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： NamHee Lee , Kwangil Park , Il Han Park , Sunghwan Seo , Kihwan Choi
IPC分类号： G11C16/34 , G11C16/10
CPC分类号： G11C16/3459 , G11C11/5628 , G11C16/10 , G11C2211/5621
摘要： A program method is provided for a nonvolatile memory device, including a substrate and multiple memory cells formed in a pocket well in the substrate. The program method includes supplying a program voltage to a selected word line during a program execution period of a program loop, supplying a verification voltage to the selected word line during a verification period of the program loop, and supplying a negative voltage to the pocket well as a well bias voltage during the verification period.
摘要翻译：提供了一种用于非易失性存储器件的编程方法，包括衬底和形成在衬底中的口袋中的多个存储单元。程序方法包括在程序循环的程序执行期间向所选字线提供编程电压，在程序循环的验证周期期间向所选择的字线提供验证电压，并向口袋提供负电压作为验证期间的良好偏置电压。

8. 发明申请

US20150248930A1 METHODS OF OPERATING NONVOLATILE MEMORY DEVICES THAT SUPPORT EFFICIENT ERROR DETECTION 审中-公开
标题翻译：操作有效的错误检测的非易失性存储器件的操作方法
公开(公告)号：US20150248930A1
公开(公告)日：2015-09-03
申请号：US14712939
申请日：2015-05-15
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Ji-Sang Lee , Moosung Kim , Kihwan Choi
IPC分类号： G11C11/56 , G11C16/34
CPC分类号： G11C11/5635 , G06F11/1048 , G11C11/5628 , G11C11/5642 , G11C16/02 , G11C16/0483 , G11C16/3413 , G11C16/3436 , G11C16/3454 , G11C29/04 , G11C2029/0411 , G11C2211/5621
摘要： Methods of operating nonvolatile memory devices may include identifying one or more multi-bit nonvolatile memory cells in a nonvolatile memory device that have undergone unintentional programming from an erased state to an at least partially programmed state. Errors generated during an operation to program a first plurality of multi-bit nonvolatile memory cells may be detected by performing a plurality of reading operations to generate error detection data and then decoding the error detection data to identify specific cells having errors. A programmed first plurality of multi-bit nonvolatile memory cells and a force-bit data vector, which was modified during the program operation, may be read to support error detection. This data, along with data read from a page buffer associated with the first plurality of multi-bit nonvolatile memory cells, may then be decoded to identify which of the first plurality of multi-bit nonvolatile memory cells are unintentionally programmed cells.
摘要翻译：操作非易失性存储器件的方法可以包括识别非易失性存储器件中的一个或多个多位非易失性存储器单元，其经历从擦除状态到至少部分编程状态的无意编程。可以通过执行多个读取操作来生成错误检测数据，然后解码错误检测数据以识别具有错误的特定单元，来检测在编程第一多个多位非易失性存储器单元的操作期间产生的错误。可以读取编程的第一多个多位非易失性存储单元和在编程操作期间被修改的强位数据向量，以支持错误检测。然后可以将该数据连同从与第一多个多位非易失性存储器单元相关联的页面缓冲器读取的数据解码以识别第一多个多位非易失性存储器单元中的哪一个是无意编程的单元。

9. 发明授权

US11494986B2 System and method for two dimensional application usage in three dimensional virtual reality environment 有权
公开(公告)号：US11494986B2
公开(公告)日：2022-11-08
申请号：US15896913
申请日：2018-02-14
申请人： Samsung Electronics, Co. Ltd.
发明人： Philippe Harscoet , Kihwan Choi , Yoonjeong Heo , Ku In Seog , Joungsoo Lee
IPC分类号： G06T19/00 , G02B27/01 , G06T11/00 , G06F3/04815 , G06F3/01 , G06F3/0481 , G06F9/451
摘要： An electronic mobile device having a physical display, at least one processor, a volatile memory, and non-volatile memory. Stored in the volatile memory are first instructions for generating a 2D user interface and second instructions for generating a 3D VR environment, and system instructions. In a first operation, the first instructions are executed to generate the 2D user interface and provide the 2D user interface to the physical display. In a second operation, the first instructions are executed to generate the 2D user interface and provide the 2D user interface to a virtual display in the volatile memory. Also, in the second operation, the second instructions are executed to generate the 3D VR environment so as to obtain the 2D user interface from the virtual display and render a 3D image using at least part of the 2D user interface, and provide the 3D image to the physical display.

10. 发明授权

US09672924B2 Nonvolatile memory device and operating method thereof 有权
公开(公告)号：US09672924B2
公开(公告)日：2017-06-06
申请号：US14458771
申请日：2014-08-13
申请人： Samsung Electronics Co., Ltd.
发明人： Yongsung Cho , Ohsuk Kwon , Kihwan Choi
IPC分类号： G11C16/08 , G11C16/10 , G11C16/24 , G11C16/26 , G11C16/34 , G06F12/02
CPC分类号： G11C16/24 , G06F12/0246 , G06F2212/7201 , G11C16/08 , G11C16/10 , G11C16/26 , G11C16/3459
摘要： An operating method of a nonvolatile memory device includes receiving a read command from a memory controller; determining a read mode based on the received read command, controlling a precharge time and an offset of a precharge control signal according to the determination result, and precharging a sensing bit line among bit lines to a precharge voltage based on the controlled precharge control signal. The sensing bit line is a bit line being precharged according to the determined read mode among the bit lines.

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