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1. 发明授权

US10556412B2 Composition for adhesion layer of gas barrier adhesive sheet, gas barrier adhesive sheet, and optical sheet having gas barrier adhesive sheet 有权
公开(公告)号：US10556412B2
公开(公告)日：2020-02-11
申请号：US14815380
申请日：2015-07-31
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Haeng Deog Koh , Eun Joo Jang , Hyun A Kang
IPC分类号： C09J183/08 , B32B27/40 , B32B7/12 , B32B27/30 , B32B27/38
摘要： A composition for an adhesion layer of a gas barrier adhesive sheet including a gas blocking film and an adhesion layer including at least one compound selected from a compound represented by Chemical Formula 1, at least one compound selected from a compound represented by Chemical Formula 2, and optionally, a compound represented by Chemical Formula 3. wherein groups and variables in Chemical Formulae 1 to 3 are the same as described in the specification.

2. 发明授权

US10053556B2 Barrier coating compositions, composites prepared therefrom, and quantum dot polymer composite articles including the same 有权
公开(公告)号：US10053556B2
公开(公告)日：2018-08-21
申请号：US14920189
申请日：2015-10-22
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Tomoyuki Kikuchi , EunJoo Jang , Hyun A Kang , Nayoun Won , Oul Cho , Haeng Deog Koh
IPC分类号： C09D7/62 , H05B33/12 , C09D179/04 , C08K9/04 , C08G83/00 , C08F2/38 , C08F2/44 , B82Y40/00 , B82Y30/00 , B32B9/04 , B32B27/08 , B32B27/28 , B32B27/34 , B32B27/36 , C08F226/06
CPC分类号： C08K9/04 , B32B9/04 , B32B27/08 , B32B27/281 , B32B27/34 , B32B27/36 , B32B27/365 , B32B2250/40 , B32B2255/10 , B32B2255/24 , B32B2255/26 , B32B2255/28 , B32B2264/10 , B32B2264/102 , B32B2264/104 , B32B2307/412 , B32B2457/00 , B82Y30/00 , B82Y40/00 , C08F2/38 , C08F2/44 , C08F226/06 , C08G83/00 , C08J7/047 , C08J2367/02 , C08J2481/02 , C09D7/62 , C09D179/04 , H05B33/12 , C08L81/02
摘要： A barrier coating composition including: a monomer combination including a first monomer having at least two thiol groups at its terminal end and a second monomer having at least two carbon-carbon unsaturated bond-containing groups at its terminal end; and a plurality of organo-modified clay particles dispersed in the monomer combination, wherein the organo-modified clay particles include a compound having a hydrocarbyl group linked to a heteroatom, and wherein the compound is a primary, secondary, or tertiary amine, a quaternary organoammonium salt, a primary, secondary, or tertiary phosphine, a quaternary organophosphonium salt, a thiol including an amine group, or a combination thereof.

3. 发明授权

US09029271B2 Methods of patterning block copolymer layers 有权
标题翻译：图案化嵌段共聚物层的方法
公开(公告)号：US09029271B2
公开(公告)日：2015-05-12
申请号：US14139986
申请日：2013-12-24
申请人： Samsung Electronics Co., Ltd.
发明人： Youn Jung Park , Haeng Deog Koh , Mi-Jeong Kim , Seong-Jun Jeong
IPC分类号： H01L21/31 , H01L21/02 , H01L21/027
CPC分类号： H01L21/02118 , B81C1/00031 , B81C2201/0149 , H01L21/02356 , H01L21/027 , H01L21/0271 , H01L21/3081
摘要： A method of patterning a block copolymer layer includes: providing a guide pattern on a surface of a substrate, the guide pattern including sidewalls each elongated in a longitudinal direction and spaced apart from each other, a trench defined by a bottom surface and facing surfaces of the sidewalls, and having a uniform width over an entire length thereof in the longitudinal direction, and a latitudinal wall perpendicular to the longitudinal direction of the trench; providing a block copolymer layer on the surface of the substrate; and annealing the block copolymer to cause self-assembly of the block copolymer and to direct the same in the trench. The block copolymer has a microphase-separation into anisotropic discrete domains aligned with a period λo in the trench by the annealing.
摘要翻译：图案化嵌段共聚物层的方法包括：在基材的表面上提供引导图案，所述引导图案包括各自在纵向方向上延伸并彼此间隔开的侧壁，所述沟槽由底表面和相对的侧壁，并且在其纵向方向上在其整个长度上具有均匀的宽度，以及垂直于沟槽的纵向方向的纬向壁; 在基材的表面上提供嵌段共聚物层; 并且使嵌段共聚物退火以使嵌段共聚物自组装并将其引导到沟槽中。嵌段共聚物通过退火将微相分离成与沟槽中的周期λo对准的各向异性离散畴。

4. 发明授权

US09963632B2 Quantum dot-resin nanocomposite and method of preparing same 有权
公开(公告)号：US09963632B2
公开(公告)日：2018-05-08
申请号：US14308506
申请日：2014-06-18
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Haeng Deog Koh , Hyun A Kang , Eun Joo Jang , Na Youn Won
IPC分类号： C09K11/02 , C09K11/08 , H01L33/50 , B82Y40/00 , B82Y20/00
CPC分类号： C09K11/02 , B82Y20/00 , B82Y40/00 , C09K11/70 , Y10S977/774 , Y10S977/83 , Y10S977/896 , Y10S977/90 , Y10S977/952
摘要： A quantum dot-resin nanocomposite including a nanoparticle including a curable resin and a plurality of quantum dots contacting the nanoparticle. Also, a method of preparing the nanocomposite, and a molded article including the nanocomposite.

5. 发明授权

US09557639B2 Method of patterning block copolymer layer and patterned structure 有权
标题翻译：图案化嵌段共聚物层和图案结构的方法
公开(公告)号：US09557639B2
公开(公告)日：2017-01-31
申请号：US14078921
申请日：2013-11-13
申请人： SAMSUNG ELECTRONICS CO., LTD. , Yonsei University, University—Industry Foundation(UIF)
发明人： Mi-Jeong Kim , In Taek Han , June Huh , Seong-Jun Jeong , Haeng Deog Koh , Youn Jung Park
IPC分类号： G03F7/00 , B82B3/00 , B82Y40/00 , B82Y30/00
CPC分类号： G03F7/0002 , B82B3/00 , B82B3/0066 , B82Y30/00 , B82Y40/00 , Y10T428/24802
摘要： A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r1, and the inner apex having a second curvature radius r2, respectively, and the width of the patterning area W, the first curvature radius r1 and the second curvature radius r2, satisfy Inequation 1: 2 + 2 - ( 1 + 2 ) [ ( n + 2 ) 2 n ⁡ ( n + 1 ) ] 1 3 ≤ r 1 - r 2 W ≤ 2 + 2 - ( 1 + 2 ) [ ( n - 2 ) 2 n ⁡ ( n - 1 ) ] 1 3 . Inequation ⁢ ⁢ 1
摘要翻译：一种图案化嵌段共聚物层的方法，所述方法包括：在其表面上提供具有引导图案的基材; 在引导图案的基板上形成嵌段共聚物层，嵌段共聚物层包括嵌段共聚物; 并且根据引导图案将嵌段共聚物自组装在基板上以形成n / 2个离散区域，其中引导图案包括具有90度弯曲部分的嵌段共聚物图案化区域，以及外部顶点和内部 90度弯曲部的顶点分别成圆形，外顶点分别具有第一曲率半径r1和内顶点，第二曲率半径r2，图案形成区域W的宽度，第一曲率半径r1和第二曲率半径曲率半径r2满足等式1：2 + 2 - （1 + 2）[（n + 2）2 n（n + 1）] 1 3≤r 1 - r 2 W≤2 + 2 - （1 + 2 ）[（n-2）2 n（n-1）] 1 3。不等式1

6. 发明授权

US09417520B2 Methods of patterning block copolymer layers and patterned structures 有权
标题翻译：图案化嵌段共聚物层和图案结构的方法
公开(公告)号：US09417520B2
公开(公告)日：2016-08-16
申请号：US14171919
申请日：2014-02-04
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Haeng Deog Koh , Mi-Jeong Kim , In Taek Han
IPC分类号： H01L21/3105 , G03F7/00
CPC分类号： G03F7/0002 , Y10T428/24802
摘要： A method of patterning a block copolymer layer, the method including: providing a substrate including a topographic pattern on a surface of the substrate, wherein the topographic pattern includes a trench and a mesa; forming, on the surface of the substrate, an underlayer including a polymer, wherein the polymer includes a repeating unit derived from a substituted or unsubstituted aromatic vinyl monomer and has an anchoring group; heat-treating the underlayer to anchor the underlayer to the surface of the substrate via the anchoring group; irradiating the heat-treated underlayer with light to form a crosslinked polymer with a crosslink between carbon atoms of main chains of the polymer; forming a block copolymer layer on the underlayer including the crosslinked polymer; and heat-treating the block copolymer layer to form a self-assembled structure of the block copolymer directed by the topographic pattern.
摘要翻译：一种图案化嵌段共聚物层的方法，该方法包括：在基材的表面上提供包括地形图案的基材，其中所述地形图案包括沟槽和台面; 在基材表面上形成包含聚合物的底层，其中所述聚合物包含衍生自取代或未取代的芳族乙烯基单体并具有锚定基团的重复单元; 热处理底层以经由锚定组将底层锚定到基底的表面; 用光照射经热处理的底层，以形成具有聚合物主链碳原子之间交联的交联聚合物; 在包含交联聚合物的底层上形成嵌段共聚物层; 并且对所述嵌段共聚物层进行热处理以形成由所述形貌图案引导的嵌段共聚物的自组装结构。

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