会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Electro-optical device, manufacturing method of the same, and electronic apparatus
    • 电光装置及其制造方法以及电子装置
    • US07537948B2
    • 2009-05-26
    • US11599422
    • 2006-11-15
    • Kenji HayashiRyoichi NozawaKatsuji Hiraide
    • Kenji HayashiRyoichi NozawaKatsuji Hiraide
    • H01L21/00
    • H01L27/12H01L27/3244H01L27/3295H01L29/78621H01L51/524H01L51/5253H01L2924/0002H01L2924/00
    • To provide an electro-optical device having a buffer layer which planarizes a gas barrier layer so that stress-concentration in the gas barrier layer is reduced, the buffer layer being prevented from leaking out of a predetermined area, and to provide a method of producing the same and an electronic apparatus. In an electro-optical device 1 having, on a substrate 200, a plurality of first electrodes 23, a bank structure 221 having a plurality of openings 221a positioned correspondingly to the formed first electrodes, electro-optical layers 60 arranged in the respective openings 221a, and a second electrode 50 covering the bank structure 221 and the electro-optical layers 60, the device includes a buffer layer 210 formed so as to cover the second electrode 50 and have a substantially flat upper surface, a frame 215 made of a material having no affinity to the buffer layer 210 and surrounding the periphery of the buffer layer 210, and a gas barrier layer 30 covering the buffer layer 210 and the frame 215.
    • 为了提供一种电光装置,其具有使阻气层平坦化的缓冲层,使得阻气层中的应力集中降低,防止缓冲层从预定区域泄漏,并提供生产 相同和电子设备。 在基板200具有多个第一电极23的电光装置1中,具有与形成的第一电极对应的多个开口221a的堤结构221,布置在各个开口221a中的电光层60 以及覆盖堤结构221和电光层60的第二电极50,该器件包括形成为覆盖第二电极50并具有基本平坦的上表面的缓冲层210,由材料制成的框架215 对缓冲层210没有亲和力并且围绕缓冲层210的周边,以及覆盖缓冲层210和框架215的阻气层30。
    • 6. 发明授权
    • Electronic circuit, driving method thereof, electro-optical device, and electronic apparatus
    • 电子电路,其驱动方法,电光装置和电子设备
    • US07460093B2
    • 2008-12-02
    • US11091544
    • 2005-03-29
    • Tokuro OzawaEiji KandaRyoichi Nozawa
    • Tokuro OzawaEiji KandaRyoichi Nozawa
    • G09G3/30
    • G09G3/3233G09G2300/0819G09G2300/0852G09G2300/0861G09G2310/0251G09G2320/043
    • To reduce a time for applying a target voltage to a gate of a driving transistor. During an initializing period, both ends of a capacitive element become a short-circuited state by turning on transistors, so that node A and B becomes a voltage made by subtracting the threshold voltage Vthp of the driving transistor from a power source voltage VEL. During a writing period, the transistor is turned on and a data signal X-j is supplied to change the voltage at the node B as much as a voltage corresponding the current which is to flow into an OLED element. The node A is changed from the threshold voltage as much as the value obtained by dividing the voltage change by capacity ratio. During a light-emitting period, the transistor is turned on, so that the current corresponding to the voltage at the node A flows through the OLED element.
    • 以减少将目标电压施加到驱动晶体管的栅极的时间。 在初始化期间,电容元件的两端通过导通晶体管而成为短路状态,使得节点A和B成为从电源电压VEL减去驱动晶体管的阈值电压Vthp而成的电压。 在写入周期期间,晶体管导通,并且提供数据信号X-j以将节点B处的电压改变为与流入OLED元件的电流相对应的电压。 节点A的阈值电压与通过将电压变化除以容量比得到的值相同。 在发光周期期间,晶体管导通,使得与节点A处的电压相对应的电流流过OLED元件。