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1. 发明授权

US4613485A Pnictide trap for vacuum systems 失效
标题翻译：用于真空系统的Pnictide陷阱
公开(公告)号：US4613485A
公开(公告)日：1986-09-23
申请号：US581101
申请日：1984-02-17
申请人： Robert W. Parry , John A. Baumann , Rozalie Schachter
发明人： Robert W. Parry , John A. Baumann , Rozalie Schachter
IPC分类号： B01D8/00 , F04B37/16 , F01N3/10
CPC分类号： B01D8/00 , B01J2219/0894
摘要： The present invention provides a trap for a vapor species, particularly a pnictide.sub.4 vapor species, for a vacuum system of the type including a vacuum chamber communicating with a forepump through a vacuum line. The trap may be positioned within the vacuum chamber itself, or in the alternative, the trap may be located between the vacuum chamber and the forepump. The trap includes a housing for a cracker, which may be a heated filament or a plasma, which cracks the pnictide vapor species into pnictide.sub.2. The walls of the housing are cooled so that the trapped pnictide species readily forms a film and adheres to the walls of the housing. The pnictide.sub.4 vapor species, which may be harmful to the operation of a forepump, is prevented from entering the forepump. A removable sleeve can be positioned in the housing so that the cracked species adheres to it. The sleeve may be removed from the housing for maintenance and replacement purposes. When the trap is located within the vacuum chamber itself, it also functions to reduce background pnictide.sub.4 pressure in that chamber.
摘要翻译：本发明提供了一种用于真空系统的蒸汽种类，特别是pnictide4蒸气物质的捕集阱，该真空系统包括通过真空管道与前级泵通过的真空室。捕集器可以定位在真空室本身内，或者可选地，阱可以位于真空室和前级泵之间。捕集器包括用于裂化器的壳体，其可以是加热的细丝或等离子体，其将pnictide蒸气物质裂解成pnictide2。壳体的壁被冷却，使得被捕获的pnictide物质容易形成膜并粘附到壳体的壁上。可能对前排泵的操作有害的pnictide4蒸汽物质被阻止进入前级泵。可拆卸的套筒可以被定位在壳体中，使得裂纹物质附着在其上。套管可以从外壳上取下来进行维护和更换。当陷阱位于真空室本身内时，它也起到减小该室内的背景影响4的作用。

2. 发明授权

US4746500A Pnictide trap for vacuum systems 失效
标题翻译：用于真空系统的Pnictide陷阱
公开(公告)号：US4746500A
公开(公告)日：1988-05-24
申请号：US886567
申请日：1986-07-16
申请人： Robert W. Parry , John A. Baumann , Rozalie Schachter
发明人： Robert W. Parry , John A. Baumann , Rozalie Schachter
IPC分类号： B01D8/00 , B01D3/10
CPC分类号： B01D8/00 , B01J2219/0894
摘要： A fore line trap is located before the forepump in a vacuum system. The trap utilizes a cracker, which may be a heated filament or a plasma, and cold walls. The cracker cracks pnictide gas species such as P.sub.4 into other species such as P.sub.2 which have a higher sticking co-efficient. The pnictides are deposited on the cold walls. The cold walls preferably comprise a sleeve which may be removed from the trap and replaced by a clean one.
摘要翻译：前线陷阱位于真空系统中的前泵前。该捕集器采用裂化器，其可以是加热的长丝或等离子体，以及冷壁。裂解器将P4等气体物质分解成其他物种，如P2，具有较高的粘附效率。 ict ides存放在寒冷的墙壁上。冷壁优选地包括可从捕集器移除并由干净的壁替代的套筒。

3. 发明授权

US4713192A Doping of catenated phosphorus materials 失效
标题翻译：连接磷材料的掺杂
公开(公告)号：US4713192A
公开(公告)日：1987-12-15
申请号：US677911
申请日：1984-12-04
申请人： Christian G. Michel , Rozalie Schachter , Mark A. Kuck , John A. Baumann , Paul M. Raccah
发明人： Christian G. Michel , Rozalie Schachter , Mark A. Kuck , John A. Baumann , Paul M. Raccah
IPC分类号： C03C17/22 , H01L29/24 , H01L51/05 , H01L21/34 , H01L21/38
CPC分类号： C03C17/22 , H01L29/24 , C03C2217/28 , C03C2217/283 , C03C2217/29 , C03C2218/15 , H01L51/0508 , H01L51/0512
摘要： High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Rectifying Schottky junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti as junction forming top contacts. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.Single and multiple source vapor transport, condensed phase, melt quench, flash evaporation, chemical vapor deposition, and molecular flow deposition may be employed in synthesizing these materials. Vapor transport may be employed to purify phosphorus.
摘要翻译：高磷多磷化物，即MPx，其中M是碱金属（Li，Na，K，Rb和Cs）或模拟碱金属的键合行为的金属，并且其中x = 7至15或非常远大于15（新形式的磷）是其晶体，多晶和无定形形式（晶粒和膜）中的有用半导体。 MP15似乎具有最好的性能，KP15更容易合成。 P可以包括其他三价物以及其它三价原子物种。电阻降低可以通过掺杂Ni，Fe，Cr和其他具有d或f外电子水平的金属来实现; 或通过并入As和其他pnictides。用Ni掺杂并采用Ni作为背面接触的整流肖特基结结器件包括Cu，Al，Mg，Ni，Au，Ag和Ti作为接合形成顶部触头。还公开了光电，光致抗蚀剂和光致发光器件。所有半导体应用似乎都是可行的。可以在合成这些材料时采用单源和多源蒸气输送，冷凝相，熔融淬火，闪蒸，化学气相沉积和分子流沉积。可以使用蒸气传输来净化磷。

4. 发明授权

US4620968A Monoclinic phosphorus formed from vapor in the presence of an alkali metal 失效
标题翻译：在碱金属存在下由蒸气形成单斜磷
公开(公告)号：US4620968A
公开(公告)日：1986-11-04
申请号：US419537
申请日：1982-09-17
申请人： Christian G. Michel , Rozalie Schachter , Mark A. Kuck , John A. Baumann , Paul M. Raccah
发明人： Christian G. Michel , Rozalie Schachter , Mark A. Kuck , John A. Baumann , Paul M. Raccah
IPC分类号： C01B25/00 , C01B25/02 , C01B25/04 , C01B25/08 , C03C17/22 , C09K21/04 , C23C14/06 , C23C14/54 , C30B23/02 , C30B25/02 , H01L29/24 , H01L51/05 , C01B25/01 , C04B35/00
CPC分类号： H01L29/24 , C01B25/003 , C01B25/02 , C01B25/04 , C01B25/08 , C01B25/081 , C01B25/088 , C03C17/22 , C09K21/04 , C23C14/06 , C23C14/541 , C30B23/02 , C30B25/02 , C30B29/10 , C03C2217/28 , C03C2217/283 , C03C2217/29 , C03C2218/15 , H01L51/0508 , H01L51/0512
摘要： Monoclinic phosphorus is produced in a single source vapor transport apparatus comprising a sealed evacuated ampoule containing a mixture or compound of phosphorus and an alkali metal with the phosphorus to alkali metal ratio being 11 or greater. The charge is heated to 550.degree.-560.degree. C. and the monoclinic phosphorus crystals are formed on the cooler surface at the top of the ampoule over the temperature range of 500.degree.-560.degree. C. The preferred heating temperature is in the neighborhood of 555.degree. C. and the preferred deposition temperature is in the neighborhood of 539.degree. C. Alkali metals that may be employed include sodium, potassium, rubidium and cesium. The monoclinic phosphorus crystals form in two habits. Those formed in the presence of sodium and cesium are in the form of flat square platelets up to 4 mm on a side and 2 mm thick. These platelets may be easily cleaved into thinner platelets, like mica. The other habit formed in the presence of potassium and rubidium is in the form of a truncated pyramid up to 4 mm.times.3 mm.times.2 mm high. This habit is hard to cleave. The crystals are semiconductors with a band gap, indicated by photoluminescence, of about 2.1 eV at room temperature. Powder X-ray diffraction, and differential thermal analysis are consistent with that reported for Hittorf's phosphorus prepared according to the prior art. The crystals are a deep red on transmission and birefringent, rotating the plane of polarization in a polarizing microscope. They contain from 50 to 2000 parts per million of alkali metal and therefore may be utilized as a form of very pure phosphorus as well as for their semiconducting and birefringent qualities and as phosphors.
摘要翻译：在单源蒸气输送装置中制备单斜磷，其包括含有磷与碱金属的比例为11以上的磷和碱金属的混合物或化合物的密闭的真空安瓿。将电荷加热至550〜-560℃，在500〜-560℃的温度范围内，在安瓿顶部的较冷的表面形成单斜晶磷晶体。优选的加热温度在 555℃，优选的沉积温度在539℃附近。可以使用的碱金属包括钠，钾，铷和铯。单斜磷晶体形成两种习惯。在钠和铯存在下形成的那些是平面方形血小板的形式，一侧高达4毫米，2mm厚。这些血小板可以容易地切割成更薄的血小板，如云母。在钾和铷存在下形成的另一个习惯是高达4毫米×3毫米×2毫米高的截顶棱锥的形式。这种习惯很难解剖。晶体是在室温下具有约2.1eV的光致发光带隙的半导体。粉末X射线衍射和差示热分析与根据现有技术制备的Hittorf磷报道的一致。晶体是透射和双折射的深红色，在偏光显微镜中旋转偏振平面。它们含有50至2000ppm的碱金属，因此可以用作非常纯的磷以及它们的半导体和双折射性质以及作为荧光体的形式。

5. 发明授权

US5032472A Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them 失效
标题翻译：接合磷材料的膜，其制备和使用，以及使用它们的半导体和其他装置
公开(公告)号：US5032472A
公开(公告)日：1991-07-16
申请号：US322688
申请日：1989-03-13
申请人： Christian G. Michel , Rozalie Schachter , Mark A. Kuck , John A. Baumann , Paul M. Raccah
发明人： Christian G. Michel , Rozalie Schachter , Mark A. Kuck , John A. Baumann , Paul M. Raccah
IPC分类号： C01B25/00 , C01B25/02 , C01B25/04 , C01B25/08 , C03C17/22 , C09K21/04 , C23C14/06 , C23C14/24 , C23C14/54 , C30B23/02 , C30B25/02 , H01L21/28 , H01L21/314 , H01L21/3205 , H01L21/363 , H01L23/29 , H01L23/31 , H01L29/24 , H01L29/49 , H01L29/51 , H01L29/812 , H01L31/032 , H01L51/00 , H01L51/05 , H01L51/40
CPC分类号： H01L51/0541 , C01B25/003 , C01B25/02 , C01B25/04 , C01B25/08 , C01B25/081 , C01B25/088 , C03C17/22 , C09K21/04 , C23C14/06 , C23C14/24 , C23C14/541 , C30B23/02 , C30B25/02 , C30B29/10 , H01L21/02422 , H01L21/02521 , H01L21/02576 , H01L21/02581 , H01L21/02631 , H01L21/28167 , H01L21/314 , H01L21/32051 , H01L23/291 , H01L23/3171 , H01L29/24 , H01L29/4908 , H01L29/51 , H01L29/8126 , H01L31/032 , H01L51/0545 , C03C2217/28 , C03C2217/283 , C03C2217/29 , C03C2218/15 , H01L2924/0002 , H01L51/001 , H01L51/0508 , H01L51/0512
摘要： High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.These semiconductors belong to the class of polymer forming, trivalent atomic species forming homatomic, covalent bonds having a coordination number slightly less than 3. The predominant local order appears to be all parallel pentagonal tubes in all forms, including amorphous, except for the monoclinic and twisted fiber allotropes of phosphorus.Large crystal monoclinic phosphorus (a birefringent material) in two habits, a twisted fiber phosphorus allotrope and a star shaped fibrous high phosphorus material are also disclosed.Single and multiple source vapor transport, condensed phase, melt quench, flash evaporation, chemical vapor deposition, and molecular flow deposition may be employed in synthesizing these materials. Vapor transport may be employed to purify phosphorus.
摘要翻译：高磷多磷化物，即MPx，其中M是碱金属（Li，Na，K，Rb和Cs）或模拟碱金属键合行为的金属，x = 7至15或非常大于15（新磷的形式）是其晶体，多晶和无定形形式（晶粒和膜）中的有用的半导体。 MP15似乎具有最好的性能，KP15更容易合成。 P可以包括其他三价物以及其它三价原子物种。电阻降低可以通过掺杂Ni，Fe，Cr和其他具有d或f外电子水平的金属来实现; 或通过并入As和其他pnictides。掺杂有Ni并且以Ni作为背接触的结合装置的顶部触点包括Cu，Al，Mg，Ni，Au，Ag和Ti。还公开了光电，光致抗蚀剂和光致发光器件。所有半导体应用似乎都是可行的。这些半导体属于聚合物形成类型，三价原子物质形成具有略小于3的配位数的同原子，共价键。主要的局部顺序似乎是所有形式的所有平行五边形管，包括无定形，除了单斜晶和扭曲的纤维同素异形体的磷。还公开了两种习惯中的大晶体单斜晶磷（双折射材料），扭曲纤维磷同素异形体和星形纤维状高磷材料。可以在合成这些材料时采用单源和多源蒸气输送，冷凝相，熔融淬火，闪蒸，化学气相沉积和分子流沉积。可以使用蒸气传输来净化磷。

6. 发明授权

US4822581A Catenated phosphorus materials and their preparation 失效
公开(公告)号：US4822581A
公开(公告)日：1989-04-18
申请号：US677845
申请日：1984-12-04
申请人： Christian G. Michel , Rozalie Schachter , Mark A. Kuck , John A. Baumann , Paul M. Raccah
发明人： Christian G. Michel , Rozalie Schachter , Mark A. Kuck , John A. Baumann , Paul M. Raccah
IPC分类号： C03C17/22 , H01L29/24 , H01L31/032 , H01L51/05 , C01B25/08
CPC分类号： H01L29/24 , C03C17/22 , H01L31/032 , C03C2217/28 , C03C2217/283 , C03C2217/29 , C03C2218/15 , H01L51/0508 , H01L51/0512
摘要： High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconducutors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.These semiconductors belong to the class of polymer forming, trivalent atomic species forming homatomic, covalent bonds having a coordination number slightly less than 3. The predominant local order appears to be all parallel pentagonal tubes in all forms, including amorphous, except for the monoclinic and twisted fiber allotropes of phosphorus.Large crystal monoclinic phosphorus (a birefringent material) in two habits, a twisted fiber phosphorus allotrope and a star shaped fibrous high phosphorus material are also disclosed.Single and multiple source vapor transport, condensed phase, melt quench, flash evaporation, chemical vapor deposition, and molecular flow deposition may be employed in synthesizing these materials. Vapor transport may be employed to purify phosphorus.The materials may be employed as protective coatings, optical coatings, fire retardants, fillers and reinforcing fillers for plastics and glasses, antireflection coatings for infrared optics, infrated transmitting windows, and optical rotators.

7. 发明授权

US4818636A Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them 失效
公开(公告)号：US4818636A
公开(公告)日：1989-04-04
申请号：US680367
申请日：1984-12-11
申请人： Christian G. Michel , Rozalie Schachter , Mark A. Kuck , John A. Baumann , Paul M. Raccah
发明人： Christian G. Michel , Rozalie Schachter , Mark A. Kuck , John A. Baumann , Paul M. Raccah
IPC分类号： C01B25/00 , C01B25/02 , C01B25/04 , C01B25/08 , C03C17/22 , C09K21/04 , C23C14/06 , C23C14/54 , C30B23/02 , C30B25/02 , H01L29/24 , H01L31/032 , H01L51/05 , B32B9/00 , B32B13/00
CPC分类号： H01L31/032 , C01B25/003 , C01B25/02 , C01B25/04 , C01B25/08 , C01B25/081 , C01B25/088 , C03C17/22 , C09K21/04 , C23C14/06 , C23C14/541 , C30B23/02 , C30B25/02 , C30B29/10 , H01L29/24 , C03C2217/28 , C03C2217/283 , C03C2217/29 , C03C2218/15 , H01L51/0508 , H01L51/0512
摘要： High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.These semiconductors belong to the class of polymer forming, trivalent atomic species forming homatomic, covalent bonds having a coordination number slightly less than 3. The predominant local order appears to be all parallel pentagonal tubes in all forms, including amorphous, except for the monoclinic and twisted fiber allotropes of phosphorus.Large crystal monoclinic phosphorus (a birefringent material) in two habits, a twisted fiber phosphorus allotrope and a star shaped fibrous high phosphorus material are also disclosed.Single and multiple source vapor transport, condensed phase, melt quench, flash evaporation, chemical vapor deposition, and molecular flow deposition may be employed in synthesizing these materials. Vapor transport may be employed to purify phosphorus.The materials may be employed as protective coatings, optical coatings, fire retardants, fillers and reinforcing fillers for plastics and glasses, antireflection coatings for infrared optics, infrared transmitting windows, and optical rotators.

8. 发明授权

US5247349A Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure 失效
标题翻译：具有层状结构的III-V器件的钝化和绝缘，特别是具有层状结构的非晶态聚合物
公开(公告)号：US5247349A
公开(公告)日：1993-09-21
申请号：US571033
申请日：1990-08-22
申请人： Diego J. Olego , John A. Baumann , Rozalie Schachter , Harvey B. Serreze , William E. Spicer , Paul M. Raccah
发明人： Diego J. Olego , John A. Baumann , Rozalie Schachter , Harvey B. Serreze , William E. Spicer , Paul M. Raccah
IPC分类号： C03C17/22 , H01L21/314 , H01L21/3205 , H01L23/29 , H01L23/31 , H01L29/24 , H01L29/51 , H01L31/032 , H01L51/05
CPC分类号： H01L23/3171 , C03C17/22 , H01L21/314 , H01L21/32051 , H01L23/291 , H01L29/24 , H01L29/51 , H01L31/032 , H01L2924/0002 , H01L2924/13063 , H01L51/0508 , H01L51/0512
摘要： Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the , and surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metal-semiconductor (Schottky) devices for example to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes, and to improve performance of opto-electronic devices such as light emitting diodes, lasers, solar cells, photo cathodes and photo detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof.
摘要翻译：在III-V族半导体，特别是InP，GaP和GaAs上生长的Pnictide薄膜，特别是磷是非晶态的，并且具有新颖的层状褶皱片状局部顺序。薄膜通常为400埃厚，优选通过分子束沉积生长，尽管可以使用诸如真空蒸发，溅射，化学气相沉积和来自液体熔融的沉积等其它工艺。这些层在<100> 110>和III-V晶体的表面上生长。第一层降低表面状态的密度，并且允许耗尽层被调制，表面阻挡减小，表面的电子浓度增加，并且表面复合速度降低，并且光致发光强度增加。这些层可以用于MIS和金属半导体（肖特基）器件中，例如绝缘和钝化MISFET，钝化MESFETS，以减少PIN和雪崩二极管中的反向偏置暗电流的表面电流分量，并且提高光电子器件如发光二极管，激光器，太阳能电池，光电阴极和光电探测器。可以将pnictide层应用于具有pnictide成分的金属间化合物和化合物半导体。磷化氢可以是磷，砷，锑或铋，或它们的组合。

9. 发明授权

US4867952A Cracking traps for process gas components having a condensed phase 失效
标题翻译：具有凝结相的工艺气体组分的开裂阱
公开(公告)号：US4867952A
公开(公告)日：1989-09-19
申请号：US196433
申请日：1988-05-20
申请人： John A. Baumann , Rozalie Schachter , Marcello Viscogliosi
发明人： John A. Baumann , Rozalie Schachter , Marcello Viscogliosi
IPC分类号： B01D8/00
CPC分类号： B01D8/00 , B01J2219/0894
摘要： Effluent process gases, particularly those employed in the production and processing of solid state electronic components, are cracked to form products having a condensed phase, which may be separated from the flowing process gas. A plasma trap comprises a high frequency coil for producing a plasma therein. The walls of the trap may be cooled and the trap may employ a removable wall on which the cracked product collects. Particular gases that may be treated are arsine, phosphine, disilane, silane, germane, organometallics and gases containing beryllium and boron.
摘要翻译：流出工艺气体，特别是在固态电子部件的生产和加工中使用的废气处理气体被破裂以形成具有凝结相的产物，其可与流动的工艺气体分离。等离子体捕集器包括用于在其中产生等离子体的高频线圈。捕集器的壁可以被冷却，并且捕集器可以使用可破裂的产品收集的可移除的壁。可以处理的特定气体有胂，膦，乙硅烷，硅烷，锗烷，有机金属和含有铍和硼的气体。

10. 发明授权

US4508931A Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them 失效
标题翻译：接合磷材料，其制备和使用，以及采用它们的半导体和其他装置
公开(公告)号：US4508931A
公开(公告)日：1985-04-02
申请号：US442208
申请日：1982-11-16
申请人： Christian G. Michel , Rozalie Schachter , Mark A. Kuck , John A. Baumann , Paul M. Raccah
发明人： Christian G. Michel , Rozalie Schachter , Mark A. Kuck , John A. Baumann , Paul M. Raccah
IPC分类号： C01B25/00 , C01B25/02 , C01B25/04 , C01B25/08 , C03C17/22 , C09K21/04 , C23C14/06 , C23C14/54 , C30B23/02 , C30B25/02 , H01L51/05 , H01L31/06
CPC分类号： C30B23/02 , C01B25/003 , C01B25/02 , C01B25/04 , C01B25/08 , C01B25/081 , C01B25/088 , C03C17/22 , C09K21/04 , C23C14/06 , C23C14/541 , C30B25/02 , C30B29/10 , C03C2217/28 , C03C2217/283 , C03C2217/29 , C03C2218/15 , H01L51/0508 , H01L51/0512
摘要： High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Rectifying Schottky junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti as junction forming top contacts. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.Single and multiple source vapor transport, condensed phase, melt quench, flash evaporation, chemical vapor deposition, and molecular flow deposition may be employed in synthesizing these materials. Vapor transport may be employed to purify phosphorus.The materials may be employed as protective coatings, optical coatings, fire retardants, fillers and reinforcing fillers for plastics and glasses, antireflection coatings for infrared optics, infrared transmitting windows, and optical rotators.
摘要翻译：高磷多磷化物，即MPx，其中M是碱金属（Li，Na，K，Rb和Cs）或模拟碱金属的键合行为的金属，并且其中x = 7至15或非常远大于15（新形式的磷）是其晶体，多晶和无定形形式（晶粒和膜）中的有用半导体。 MP15似乎具有最好的性能，KP15更容易合成。 P可以包括其他三价物以及其它三价原子物种。电阻降低可以通过掺杂Ni，Fe，Cr和其他具有d或f外电子水平的金属来实现; 或通过并入As和其他pnictides。用Ni掺杂并采用Ni作为背面接触的整流肖特基结结器件包括Cu，Al，Mg，Ni，Au，Ag和Ti作为接合形成顶部触头。还公开了光电，光致抗蚀剂和光致发光器件。所有半导体应用似乎都是可行的。可以在合成这些材料时采用单源和多源蒸气输送，冷凝相，熔融淬火，闪蒸，化学气相沉积和分子流沉积。可以使用蒸气传输来净化磷。这些材料可用作塑料和玻璃的保护涂层，光学涂层，阻燃剂，填料和增强填料，用于红外光学的防反射涂层，红外传输窗和旋光器。

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