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1. 发明申请

US20090203477A1 Blade opening arrowhead 审中-公开
标题翻译：刀片打开箭头
公开(公告)号：US20090203477A1
公开(公告)日：2009-08-13
申请号：US12069729
申请日：2008-02-12
申请人： Robert S. Mizek , Miroslav A. Simo , Gregory C. Smith
发明人： Robert S. Mizek , Miroslav A. Simo , Gregory C. Smith
IPC分类号： F42B6/08
CPC分类号： F42B6/08
摘要： A blade opening arrowhead having an actuator moveably mounted with respect to a blade carrying body. The actuator can move each blade between a closed position and an opened position. During flight, the blade is in the closed position. Upon target penetration, for example, the actuator moves the blade into the opened position.
摘要翻译：具有可相对于刀片承载体可移动地安装的致动器的刀片打开箭头。致动器可以在关闭位置和打开位置之间移动每个叶片。在飞行中，叶片处于关闭位置。在目标穿透时，例如，致动器将叶片移动到打开位置。

2. 发明授权

US07337773B2 Electrically activated archery component 有权
标题翻译：电激活射箭组件
公开(公告)号：US07337773B2
公开(公告)日：2008-03-04
申请号：US11031980
申请日：2005-01-06
申请人： Miroslav A. Simo , Robert S. Mizek , Frank A. Harwath , Christopher A. Kozlik , Gregory C. Smith
发明人： Miroslav A. Simo , Robert S. Mizek , Frank A. Harwath , Christopher A. Kozlik , Gregory C. Smith
IPC分类号： F41B5/22
CPC分类号： F41B5/143 , F41B5/1426
摘要： An archery component mountable with respect to an archery bow. The archery component includes a sensor that senses a movement of an archery arrow with respect to the archery bow and/or a movement of the archery bow. The sensor transmits a signal, upon sensing at least one movement, to a signal processor housed within a body of the archery bow and in communication with the sensor. The signal processor receives the signal and activates the archery component in response to the received signal.
摘要翻译：相对于射箭弓安装的射箭部件。射箭部件包括感测射箭箭头相对于射箭弓的运动和/或射箭弓的运动的传感器。传感器将感测至少一个移动的信号传送到容纳在射箭弓的身体内并与传感器通信的信号处理器。信号处理器接收信号并响应于接收到的信号激活射箭分量。

3. 发明授权

US07712460B2 Release device with follow-through 失效
标题翻译：释放设备，具有后续功能
公开(公告)号：US07712460B2
公开(公告)日：2010-05-11
申请号：US11820486
申请日：2007-06-19
申请人： Miroslav A. Simo , Gregory C. Smith
发明人： Miroslav A. Simo , Gregory C. Smith
IPC分类号： F41B5/18
CPC分类号： F41B5/1469 , F41B5/1415
摘要： A release device with a follow-through or recoil motion for use with mechanically launched projectiles. A recoil motion is in a direction opposite the path of the projectile. Releasing an arrow from a bow provides correct form and follow-through motion of a user hand directly opposite to a direction of a path of the launched arrow, to improve flight accuracy. The release device includes a housing, a trigger, a keeper and a recoil assembly. This invention also relates to a method of using the release device.
摘要翻译：具有随机或反冲运动的释放装置，用于机械发射的射弹。反冲运动在与弹丸的路径相反的方向。从箭头释放箭头可以提供正确的形式和用户手的直接运动，直接与发射箭头的路径方向相对，以提高飞行精度。释放装置包括壳体，触发器，保持器和反冲组件。本发明还涉及一种使用该释放装置的方法。

4. 发明申请

US20080314373A1 Release device with follow-through 失效
标题翻译：释放设备，具有后续功能
公开(公告)号：US20080314373A1
公开(公告)日：2008-12-25
申请号：US11820486
申请日：2007-06-19
申请人： Miroslav A. Simo , Gregory C. Smith
发明人： Miroslav A. Simo , Gregory C. Smith
IPC分类号： F41A19/00
CPC分类号： F41B5/1469 , F41B5/1415
摘要： A release device with a follow-through or recoil motion for use with mechanically launched projectiles. A recoil motion is in a direction opposite the path of the projectile. Releasing an arrow from a bow provides correct form and follow-through motion of a user hand directly opposite to a direction of a path of the launched arrow, to improve flight accuracy. The release device includes a housing, a trigger, a keeper and a recoil assembly. This invention also relates to a method of using the release device.
摘要翻译：具有随机或反冲运动的释放装置，用于机械发射的射弹。反冲运动在与弹丸的路径相反的方向。从箭头释放箭头可以提供正确的形式和用户手的直接运动，直接与发射箭头的路径方向相对，以提高飞行精度。释放装置包括壳体，触发器，保持器和反冲组件。本发明还涉及一种使用该释放装置的方法。

5. 发明申请

US20110139137A1 Archery bow riser 审中-公开
标题翻译：射箭弓提升
公开(公告)号：US20110139137A1
公开(公告)日：2011-06-16
申请号：US12653287
申请日：2009-12-11
申请人： Miroslaw A. Simo , Gregory C. Smith , Robert S. Mizek
发明人： Miroslaw A. Simo , Gregory C. Smith , Robert S. Mizek
IPC分类号： F41B5/22 , F41B5/14
CPC分类号： F41B5/143 , F41B5/0026
摘要： An archery bow riser that generally aligns a moveable arrow rest with a longitudinal axis in order to minimize a rotational effect of an archer's forehand when drawing a bow string.
摘要翻译：一个射箭弓提升器，通常将可移动的箭头支架与纵向轴线对准，以便在绘制弓弦时最小化弓箭手正手的旋转效果。

6. 发明授权

US07710396B2 Multimedia user interface 有权
公开(公告)号：US07710396B2
公开(公告)日：2010-05-04
申请号：US11329876
申请日：2006-01-11
申请人： Gregory C. Smith , Thomas J. Quinn , James J. Leftwich
发明人： Gregory C. Smith , Thomas J. Quinn , James J. Leftwich
IPC分类号： G09G5/08
CPC分类号： H04N21/812 , G06F3/017 , G06F3/0346 , G06F3/0354 , G06F3/0481 , G08C2201/32 , G11B15/023 , G11B19/025 , H04N5/4403 , H04N5/44582 , H04N5/76 , H04N21/42222 , H04N21/47 , H04N2005/4432
摘要： A user interface for multimedia centers advantageously utilizes hand-held inertial-sensing user input devices to select channels and quickly navigate the dense menus of options. Extensive use of the high resolution and bandwidth of such user input devices is combined with strategies to avoid unintentional inputs and with dense and intuitive interactive graphical displays.

7. 发明授权

US06794757B1 Structure and method of forming an enlarged head on a plug to eliminate the enclosure requirement 失效
标题翻译：在塞子上形成放大头部以消除外壳要求的结构和方法
公开(公告)号：US06794757B1
公开(公告)日：2004-09-21
申请号：US08866456
申请日：1997-05-30
申请人： Gregory C. Smith
发明人： Gregory C. Smith
IPC分类号： H01L2348
CPC分类号： H01L23/5226 , H01L21/76804 , H01L23/485 , H01L2924/0002 , Y10S438/97 , H01L2924/00
摘要： The contact opening through an insulating layer is formed having a straight sidewall portion and a bowl shaped sidewall portion. The bowl shaped sidewall portion is near the top of the insulation layer to provide an enlarged diameter of the contact opening at the top relative to the bottom. A conductive material is then formed in the contact opening in electrical contact with a lower conductive layer. The conductive material forms a plug having an enlarged head, such as a nail head or a flat heat screw shape. The enlarged head protects the silicon and a barrier layer, if present, within the contact from being etched by any subsequent anisotropic etches. Thus, when an electrical interconnection layer such as aluminum is formed overlying the contact plug, the plug acts as an etch stop to prevent etching of a barrier layer of the barrier layer within the contact opening.
摘要翻译：通过绝缘层的接触开口形成为具有直的侧壁部分和碗形的侧壁部分。碗状侧壁部分靠近绝缘层的顶部，以在顶部相对于底部提供接触开口的扩大直径。然后在接触开口中形成与下导电层电接触的导电材料。导电材料形成具有扩大的头部的塞子，例如钉头或平的热螺丝形状。扩大的头部保护硅和阻挡层（如果存在）在接触件内被任何随后的各向异性蚀刻腐蚀。因此，当诸如铝的电互连层形成在接触插塞上方时，插塞充当蚀刻停止件，以防止在接触开口内蚀刻阻挡层的阻挡层。

8. 发明授权

US6158728A Workpiece holding device 有权
标题翻译：工件夹持装置
公开(公告)号：US6158728A
公开(公告)日：2000-12-12
申请号：US452426
申请日：1999-12-01
申请人： Gregory C. Smith
发明人： Gregory C. Smith
IPC分类号： B25B5/00 , B25B5/10 , B23Q3/02
CPC分类号： B25B5/006 , B25B5/104 , B25B5/105
摘要： A workpiece holding device for a T-slotted machine table includes a locator block having a planar bottom surface, a mounting hole that intersects the bottom surface to define a center point, at least one workpiece locating surface disposed a predetermined distance from the center point, and a key protruding from the bottom surface at a second point offset a predetermined distance from the center point. The protruding portion of the key has a width substantially the same as the T-slot opening so as to slidably mount in the T-slot. A fastener extends through the mounting hole and secures the locator block to a T-nut slidably mounted in the T-slot. A clamp secured to the locator block clamps the workpiece to the locating surface of the locator block. A method of using the device is also disclosed.
摘要翻译：一种用于T型开槽机床的工件保持装置包括：具有平坦底面的定位块，与底面相交以限定中心点的安装孔，设置在离中心点一定距离的至少一个工件定位面，以及在距离中心点偏移预定距离的第二点处从底表面突出的键。键的突出部分具有与T形槽开口基本相同的宽度，从而可滑动地安装在T形槽中。紧固件延伸穿过安装孔并将定位块固定到可滑动地安装在T形槽中的T形螺母。固定到定位块的夹具将工件夹紧到定位块的定位表面。还公开了使用该装置的方法。

9. 发明授权

US5955770A Method of forming raised source/drain regions in an integrated circuit 失效
标题翻译：在集成电路中形成凸起的源极/漏极区域的方法
公开(公告)号：US5955770A
公开(公告)日：1999-09-21
申请号：US877911
申请日：1997-06-18
申请人： Tsiu C. Chan , Gregory C. Smith
发明人： Tsiu C. Chan , Gregory C. Smith
IPC分类号： H01L21/336 , H01L29/08 , H01L29/417 , H01L29/78 , H01L29/94
CPC分类号： H01L29/6659 , H01L29/0847 , H01L29/41775 , H01L29/41783 , H01L29/66628 , H01L29/7833
摘要： A method is provided for forming a planar transistor of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of field oxide regions are formed overlying a substrate electrically isolating a plurality of transistors encapsulated in a dielectric. LDD regions are formed in the substrate adjacent the transistors and the field oxide regions. Doped polysilicon raised source and drain regions are formed overlying the LDD regions and a tapered portion of the field oxide region and adjacent the transistor. These polysilicon raised source and drain regions will help to prevent any undesired amount of the substrate silicon from being consumed, reducing the possibility of junction leakage and punchthrough as well as providing a more planar surface for subsequent processing steps.
摘要翻译：提供一种用于形成半导体集成电路的平面晶体管的方法和根据该集成电路形成的集成电路。形成多个场氧化物区域，覆盖基板，电绝缘封装在电介质中的多个晶体管。 LDD区域形成在与晶体管和场氧化物区域相邻的衬底中。掺杂的多晶硅凸起的源极和漏极区域形成为覆盖LDD区域和场氧化物区域的锥形部分并且与晶体管相邻。这些多晶硅升高的源极和漏极区域将有助于防止任何不希望量的衬底硅被消耗，减少了结漏电和穿透的可能性，并且为随后的处理步骤提供了更平的表面。

10. 发明授权

US5682055A Method of forming planarized structures in an integrated circuit 失效
标题翻译：在集成电路中形成平面化结构的方法
公开(公告)号：US5682055A
公开(公告)日：1997-10-28
申请号：US480857
申请日：1995-06-07
申请人： Kuei-wu Huang , Tsiu C. Chan , Gregory C. Smith
发明人： Kuei-wu Huang , Tsiu C. Chan , Gregory C. Smith
IPC分类号： H01L29/43 , H01L21/28 , H01L21/3205 , H01L21/336 , H01L21/762 , H01L21/768 , H01L29/08 , H01L29/417 , H01L29/423 , H01L29/78 , H01L29/94 , H01L29/04
CPC分类号： H01L29/6659 , H01L21/28123 , H01L21/762 , H01L29/0847 , H01L29/41775 , H01L29/41783 , H01L29/42316 , H01L29/66628 , H01L29/7833
摘要： A method is provided for forming an improved planar structure of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A field oxide is grown across the integrated circuit patterned and etched to form an opening with substantially vertical sidewalls exposing a portion of an upper surface of a substrate underlying the field oxide where an active area will be formed. A gate electrode comprising a polysilicon gate electrode and a gate oxide are formed over the exposed portion of the substrate. The polysilicon gate has a height at its upper surface above the substrate at or above the height of the upper surface of the field oxide. The gate electrode preferably also comprises a silicide above the polysilicon and an oxide capping layer above the silicide. LDD regions are formed in the substrate adjacent the gate electrode and sidewall spacers are formed along the sides of the gate electrode including the silicide and the capping layer.
摘要翻译：提供一种用于形成半导体集成电路的改进的平面结构的方法和根据该集成电路形成的集成电路。跨越集成电路生长的场氧化物被图案化和蚀刻以形成具有基本上垂直的侧壁的开口，暴露出将形成有源区域的场氧化物下面的衬底的上表面的一部分。在衬底的暴露部分上形成包括多晶硅栅电极和栅极氧化物的栅电极。多晶硅栅极在场氧化物的上表面的高度处或其上方的衬底上方具有高度。栅极优选还包括多晶硅上方的硅化物和硅化物上方的氧化物覆盖层。 LDD区域形成在与栅电极相邻的衬底中，并且沿着包括硅化物和覆盖层的栅电极的侧面形成侧壁间隔物。

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