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1. 发明授权

US06051499A Apparatus and method for distribution of slurry in a chemical mechanical polishing system 失效
标题翻译：用于在化学机械抛光系统中分配浆料的装置和方法
公开(公告)号：US06051499A
公开(公告)日：2000-04-18
申请号：US982823
申请日：1997-12-02
申请人： Robert D. Tolles , William L. Guthrie , Jeffrey Marks , Tsungnan Cheng , Semyon Spektor , Ivan A. Ocanada , Norm Shendon
发明人： Robert D. Tolles , William L. Guthrie , Jeffrey Marks , Tsungnan Cheng , Semyon Spektor , Ivan A. Ocanada , Norm Shendon
IPC分类号： H01L21/304 , B24B37/04 , B24B57/02 , B24B1/00
CPC分类号： B24B37/04 , B24B57/02
摘要： Slurry is provided to the surface of the polishing pad by pumping the slurry up through a central port, or by dripping the slurry down onto the surface of the polishing pad from a slurry feed tube. A slurry wiper, which may have one or more flexible members, sweeps the slurry evenly and thinly across the polishing pad. A control system coordinates the distribution of slurry to the polishing pad with the motion of the carrier head.
摘要翻译：通过将浆料向上泵送通过中心口，或通过从浆料进料管将浆料向下滴落到抛光垫的表面上而将浆料提供到抛光垫的表面。可以具有一个或多个柔性构件的浆料刮水器将抛光浆料均匀且薄薄地扫过抛光垫。控制系统通过载体头的运动来协调浆料与抛光垫的分布。

2. 发明授权

US06280297B1 Apparatus and method for distribution of slurry in a chemical mechanical polishing system 有权
标题翻译：用于在化学机械抛光系统中分配浆料的装置和方法
公开(公告)号：US06280297B1
公开(公告)日：2001-08-28
申请号：US09481735
申请日：2000-01-11
申请人： Robert D. Tolles , William L. Guthrie , Jeffrey Marks , Tsungnan Cheng
发明人： Robert D. Tolles , William L. Guthrie , Jeffrey Marks , Tsungnan Cheng
IPC分类号： B24B100
CPC分类号： B24B37/04 , B24B57/02
摘要： Slurry is provided to the surface of the polishing pad by pumping the slurry up through a central port, or by dripping the slurry down onto the surface of the polishing pad from a slurry feed tube. A slurry wiper, which may have one or more flexible members, sweeps the slurry evenly and thinly across the polishing pad. A control system coordinates the distribution of slurry to the polishing pad with the motion of the carrier head.
摘要翻译：通过将浆料向上泵送通过中心口，或通过从浆料进料管将浆料向下滴落到抛光垫的表面上而将浆料提供到抛光垫的表面。可以具有一个或多个柔性构件的浆料刮水器将抛光浆料均匀且薄薄地扫过抛光垫。控制系统通过载体头的运动来协调浆料与抛光垫的分布。

3. 发明授权

US5899801A Method and apparatus for removing a substrate from a polishing pad in a chemical mechanical polishing system 失效
标题翻译：用于在化学机械抛光系统中从抛光垫移除基材的方法和装置
公开(公告)号：US5899801A
公开(公告)日：1999-05-04
申请号：US741662
申请日：1996-10-31
申请人： Robert D. Tolles , James C. Nystrom , Jeffrey Marks , William Bartlett , Victor Belitsky
发明人： Robert D. Tolles , James C. Nystrom , Jeffrey Marks , William Bartlett , Victor Belitsky
IPC分类号： B24B37/34 , B24B1/00 , B24B29/00
CPC分类号： B24B37/345
摘要： A chemical mechanical polishing apparatus has a platen with a cavity with an opening to the top surface of the platen. A polishing pad is located at an upper surface of the platen. A flexible membrane is positioned in the cavity to define a first and a second volume. A pressure source is connected to the second volume to flex the membrane, and a lifting member is positioned in the first volume so that flexing of the membrane extends the lifting member through the opening to lift the substrate off the polishing pad. Alternately, de-ionized water may be forced through a passage in the platen and an aperture in the polishing pad to lift the substrate.
摘要翻译：化学机械抛光装置具有带有空腔的台板，该空腔具有通向台板顶表面的开口。抛光垫位于压板的上表面。柔性膜定位在空腔中以限定第一和第二体积。压力源连接到第二体积以弯曲膜，并且提升构件定位在第一体积中，使得膜的弯曲使提升构件延伸穿过开口以将衬底提离抛光垫。或者，去离子水可以被迫通过压板中的通道和抛光垫中的孔以提升衬底。

4. 发明申请

US20090062941A1 HEAT INDEX 审中-公开
标题翻译：热指数
公开(公告)号：US20090062941A1
公开(公告)日：2009-03-05
申请号：US12201971
申请日：2008-08-29
申请人： Bryan Biniak , Richard Berroteran , Chris Cunningham , Atanas Ivanov , Jeffrey Marks , Brock Meltzer
发明人： Bryan Biniak , Richard Berroteran , Chris Cunningham , Atanas Ivanov , Jeffrey Marks , Brock Meltzer
IPC分类号： G06F19/00
CPC分类号： A63B71/06 , A63B24/0062 , A63B2071/065 , A63B2225/20 , A63B2225/50 , A63B2243/0037 , A63B2243/007
摘要： The system generates a heat index for each player in a sporting event. Historical data is maintained over time and is available for display by a user. In one embodiment, the heat index is provided via a network such as the internet. In another embodiment, the heat index is displayed as part of an event or game broadcast. The heat index represents the current level of performance of a player pursuant to a calculation algorithm that includes objective and subjective information. The objective information includes statistical data from a game or contest. The subjective information may include references from announcers and input from viewers.
摘要翻译：该系统为体育赛事中的每个玩家生成热指数。历史数据经过一段时间的维护，可供用户显示。在一个实施例中，热指数通过诸如互联网的网络来提供。在另一个实施例中，热指数被显示为事件或游戏广播的一部分。热指数代表根据包括客观和主观信息的计算算法的玩家目前的表现水平。客观信息包括来自游戏或比赛的统计数据。主观信息可能包括播音员的参考资料和观众的输入。

5. 发明申请

US20080055885A1 Display device 审中-公开
标题翻译：显示设备
公开(公告)号：US20080055885A1
公开(公告)日：2008-03-06
申请号：US11822163
申请日：2007-07-03
申请人： Jeffrey Marks
发明人： Jeffrey Marks
IPC分类号： F21V33/00
CPC分类号： G09F19/12 , F21S10/002
摘要： A multi-functional decorative display device as shown and described.
摘要翻译：如图所示的多功能装饰性显示装置。

6. 发明授权

US07271107B2 Reduction of feature critical dimensions using multiple masks 有权
标题翻译：使用多个掩模降低功能关键尺寸
公开(公告)号：US07271107B2
公开(公告)日：2007-09-18
申请号：US11050985
申请日：2005-02-03
申请人： Jeffrey Marks , S. M. Reza Sadjadi
发明人： Jeffrey Marks , S. M. Reza Sadjadi
IPC分类号： H01L21/311
CPC分类号： H01L21/0273 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： A method for forming features in an etch layer is provided. A first mask is formed over the etch layer wherein the first mask defines a plurality of spaces with widths. A sidewall layer is formed over the first mask. Features are etched into the etch layer through the sidewall layer, wherein the features have widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed. An additional mask is formed over the etch layer wherein the additional mask defines a plurality of spaces with widths. A sidewall layer is formed over the additional mask. Features are etched into the etch layer through the sidewall layer, wherein the widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成第一掩模，其中第一掩模限定具有宽度的多个空间。在第一掩模上形成侧壁层。特征通过侧壁蚀刻到蚀刻层中，其中特征具有小于由第一掩模限定的空间的宽度的宽度。去除掩模和侧壁层。在蚀刻层上形成另外的掩模，其中附加掩模限定具有宽度的多个空间。侧壁层形成在附加掩模上。特征通过侧壁蚀刻到蚀刻层中，其中宽度小于由第一掩模限定的空间的宽度。去除掩模和侧壁层。

7. 发明申请

US20060178835A1 Normalization methods for genotyping analysis 审中-公开
标题翻译：基因分型分析的归一化方法
公开(公告)号：US20060178835A1
公开(公告)日：2006-08-10
申请号：US11057321
申请日：2005-02-10
申请人： Jeffrey Marks
发明人： Jeffrey Marks
IPC分类号： G06F19/00
CPC分类号： G16B40/00 , G16B25/00 , G16B30/00
摘要： In arrays and other high density analysis platforms variabilities between data points and/or data sets may arise for a number of reasons. Disclosed are methods for addressing these variabilities and generating correction factors that may be used in conforming the data to expected or desired distributions. The methods may be adapted to operate with existing data analysis approaches and software applications to improve downstream analysis.
摘要翻译：在阵列和其他高密度分析平台中，数据点和/或数据集之间的变化可能由于多种原因而出现。公开了用于解决这些变异性并产生可用于使数据符合预期或期望分布的校正因子的方法。这些方法可以适应于使用现有数据分析方法和软件应用来改进下游分析。

8. 发明授权

US06908846B2 Method and apparatus for detecting endpoint during plasma etching of thin films 有权
标题翻译：用于在薄膜等离子体蚀刻期间检测端点的方法和装置
公开(公告)号：US06908846B2
公开(公告)日：2005-06-21
申请号：US10401114
申请日：2003-03-27
申请人： Brian K. McMillin , Eric Hudson , Jeffrey Marks
发明人： Brian K. McMillin , Eric Hudson , Jeffrey Marks
IPC分类号： H01L21/311 , H01L21/66 , H01L21/768 , H01L21/4763 , H01L21/302 , H01L23/48
CPC分类号： H01L21/76829 , H01J37/32963 , H01L21/31116 , H01L21/31138 , H01L21/76801 , H01L21/76807 , H01L22/26
摘要： A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the first layer and at least partially through the end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from a material that produces a detectable change in the absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.
摘要翻译：公开了一种用于在蚀刻具有设置在端点产生层上方的第一层的层堆叠的同时控制等离子体蚀刻工艺的方法。该方法包括：在监测穿过等离子体处理室的内部部分的光束的吸收率的同时，蚀刻穿过第一层并且至少部分地穿过端点产生层，其中端点产生层选自材料其在蚀刻时产生可检测的吸收速率变化。端点产生层的特征在于第一特征和第二特性中的至少一个。第一特征是不足以用作蚀刻停止层的厚度，并且第二特性对于用于蚀刻通过第一层以用作蚀刻停止层的蚀刻剂的选择性不足。该方法还包括在检测到可检测变化时产生端点信号。

9. 发明授权

US06399514B1 High temperature silicon surface providing high selectivity in an oxide etch process 失效
标题翻译：高温硅表面在氧化蚀刻工艺中提供高选择性
公开(公告)号：US06399514B1
公开(公告)日：2002-06-04
申请号：US09645924
申请日：2000-08-24
申请人： Jeffrey Marks , Jerry Yuen-Kui Wong , David W. Groechel , Peter R. Keswick , Chan-Lon Yang
发明人： Jeffrey Marks , Jerry Yuen-Kui Wong , David W. Groechel , Peter R. Keswick , Chan-Lon Yang
IPC分类号： H01L21302
CPC分类号： H01L21/67069 , C23C16/517 , H01F2029/143 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01L21/6831
摘要： A plasma process for etching oxide and having a high selectivity to silicon including flowing into a plasma reaction chamber a fluorine-containing etching gas and maintaining a temperature of an exposed silicon surface within said chamber at a temperature of between 200° C. and 300° C. An example of the etching gas includes SiF4 and a fluorocarbon gas. The plasma may be generated by a capacitive discharge type plasma generator or by an electromagnetically coupled plasma generator, such as an inductively coupled plasma generator. The high selectivity exhibited by the etch process permits use of an electromagnetically coupled plasma generator, which in turn permits the etch process to be performed at low pressures of between 1 and 30 milliTorr, resulting the etching of vertical sidewalls in the oxide layer.
摘要翻译：一种用于蚀刻氧化物并具有对硅的高选择性的等离子体工艺，包括流入等离子体反应室中的含氟蚀刻气体，并将所述室内的暴露的硅表面的温度保持在200℃至300℃的温度蚀刻气体的实例包括SiF 4和碳氟化合物气体。等离子体可以由电容放电型等离子体发生器或电磁耦合等离子体发生器（诸如电感耦合等离子体发生器）产生。通过蚀刻工艺表现出的高选择性允许使用电磁耦合等离子体发生器，其进而允许在1至30毫托之间的低压下进行蚀刻工艺，导致蚀刻氧化物层中的垂直侧壁。

10. 发明授权

US06218312B1 Plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器
公开(公告)号：US06218312B1
公开(公告)日：2001-04-17
申请号：US08987509
申请日：1998-10-08
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
摘要翻译：本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅），并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置或远程加热硅片。

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