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1. 发明授权

US4399004A Photoelectrochemical gold plating process 失效
标题翻译：光电化学镀金工艺
公开(公告)号：US4399004A
公开(公告)日：1983-08-16
申请号：US272517
申请日：1981-06-11
申请人： Reginald R. Buckley , Lucian A. D'Asaro , Paul A. Kohl , Frederick W. Ostermayer, Jr. , Catherine Wolowodiuk
发明人： Reginald R. Buckley , Lucian A. D'Asaro , Paul A. Kohl , Frederick W. Ostermayer, Jr. , Catherine Wolowodiuk
IPC分类号： H01L21/28 , C25D3/48 , H01L21/00 , H01L21/288 , C25D5/02 , C25D7/12
CPC分类号： C25D3/48 , H01L21/288
摘要： A process is described for plating gold on metal surfaces electrically attached to a compound semiconductor. The procedure is particularly valuable where gold is to be in small holes or crevices in semiconductor structure since electroplating on the semiconductor surface is avoided. The process is useful for providing low inductance electrical connection to various parts of semiconductor devices such as to the source in gallium arsenide field-effect transistors.
摘要翻译：描述了用于在电连接到化合物半导体的金属表面上镀金的方法。由于避免了在半导体表面上进行电镀，因此在半导体结构中的小孔或缝隙中金子是特别有价值的。该方法对于提供诸如砷化镓场效应晶体管中的源极的半导体器件的各个部分的低电感电连接是有用的。

2. 发明授权

US4389291A Photoelectrochemical processing of InP-type devices 失效
标题翻译： InP型器件的光电化学处理
公开(公告)号：US4389291A
公开(公告)日：1983-06-21
申请号：US275245
申请日：1981-06-19
申请人： Paul A. Kohl , Frederick W. Ostermayer, Jr. , Catherine Wolowodiuk
发明人： Paul A. Kohl , Frederick W. Ostermayer, Jr. , Catherine Wolowodiuk
IPC分类号： C25F3/12 , C25F3/14 , H01L21/3063
CPC分类号： C25F3/12 , C25F3/14 , H01L21/30635 , Y10T428/22 , Y10T428/31504
摘要： A process is described for photoelectrochemically etching n-type indium phosphide and closely related compound semiconductors such as indium gallium arsenide and indium gallium arsenide phosphide. Such a process is advantageous because the etching is confined to where light is incident to the surface of the semiconductor. In addition, the shape of the configuration etched out of the semiconductor can be controlled by the light incident on the surface of the semiconductor. For example, undercutting can be minimized by use of parallel rays incident on the surface of the semiconductor to be etched.
摘要翻译：描述了用于光电化学蚀刻n型磷化铟和紧密相关的化合物半导体如砷化铟镓和砷化镓镓磷化物的方法。这种方法是有利的，因为蚀刻被限制在光入射到半导体的表面的地方。此外，可以通过入射在半导体表面上的光来控制从半导体中蚀刻出的构造的形状。例如，可以通过使用入射在要蚀刻的半导体的表面上的平行光线来最小化底切。

3. 发明授权

US4415414A Etching of optical surfaces 失效
标题翻译：蚀刻光学表面
公开(公告)号：US4415414A
公开(公告)日：1983-11-15
申请号：US416473
申请日：1982-09-10
申请人： Randolph H. Burton , Paul A. Kohl , Frederick W. Ostermayer, Jr.
发明人： Randolph H. Burton , Paul A. Kohl , Frederick W. Ostermayer, Jr.
IPC分类号： C30B33/00 , C25F3/12 , C25F3/14 , C30B29/40 , C30B33/10 , G02B3/00 , H01L21/3063 , H01L21/465 , H01L33/00
CPC分类号： H01L21/465 , C25F3/12 , C25F3/14 , H01L21/30635
摘要： An etching process is described which can etch geometrical shapes on the surface of an n-type or intrinsic compound semiconductor and yield surfaces of optical quality without further processing. The etching process is an electrochemical process where etching is proportional to light intensity. The process involves applying a potential to the compound semiconductor while immersed in an electrolytic solution and irradiating the surface to be etched with light in a certain energy range. The electrolytic solution contains hydrofluoric acid. The distribution of light intensity and ray direction is selected to produce the desired geometrical shape. Particularly advantageous is that the surfaces produced are of optical quality. For example, lenses produced by the etching process exhibit surfaces of optical quality. Further, the process can be carried out on all the lenses on a wafer simultaneously without attention to individual devices. This is highly desirable economically. Also, the lenses produced are integral parts of the light emitting diode.
摘要翻译：描述了可以蚀刻n型或本征化合物半导体的表面上的几何形状并产生光学质量的表面而没有进一步处理的蚀刻工艺。蚀刻过程是电化学过程，其中蚀刻与光强度成比例。该方法包括在化合物半导体浸入电解液中时施加电位，并在一定能量范围内用光照射被蚀刻表面。电解液含有氢氟酸。选择光强度和射线方向的分布以产生所需的几何形状。特别有利的是所生产的表面具有光学质量。例如，通过蚀刻工艺产生的透镜表现出光学质量的表面。此外，可以同时对晶片上的所有透镜进行该处理，而不关注各个器件。这在经济上是非常理想的。而且，所生产的镜片也是发光二极管的组成部分。

4. 发明授权

US4482442A Photoelectrochemical etching of n-type gallium arsenide 失效
标题翻译： n型砷化镓的光电化学蚀刻
公开(公告)号：US4482442A
公开(公告)日：1984-11-13
申请号：US544993
申请日：1983-10-24
申请人： Paul A. Kohl , Frederick W. Ostermayer, Jr.
发明人： Paul A. Kohl , Frederick W. Ostermayer, Jr.
IPC分类号： C25F3/12 , C25F3/14 , H01L21/3063
CPC分类号： C25F3/12 , C25F3/14 , H01L21/30635 , Y10T428/21 , Y10T428/31504
摘要： A process is described for photoelectrochemically etching n-type gallium arsenide and closely related compound semiconductors such as gallium aluminum arsenide and gallium arsenide phosphide. Such a process is advantageous because the etching is confined to where light is incident to the surface of the semiconductor. In addition, the shape of the configuration etched out of the semiconductor can be controlled by the light incident on the surface of the semiconductor. For example, undercutting can be minimized by use of parallel rays incident on the surface of the semiconductor to be etched.
摘要翻译：描述了用于光电化学蚀刻n型砷化镓和紧密相关的化合物半导体如镓砷化镓和砷化镓磷化物的方法。这种方法是有利的，因为蚀刻被限制在光入射到半导体的表面的地方。此外，可以通过入射在半导体表面上的光来控制从半导体中蚀刻出的构造的形状。例如，可以通过使用入射在要蚀刻的半导体的表面上的平行光线来最小化底切。

5. 发明授权

US4689125A Fabrication of cleaved semiconductor lasers 失效
标题翻译：切割半导体激光器的制造
公开(公告)号：US4689125A
公开(公告)日：1987-08-25
申请号：US869802
申请日：1986-05-28
申请人： Charles A. Burrus, Jr. , Paul A. Kohl , Tien P. Lee , Frederick W. Ostermayer, Jr.
发明人： Charles A. Burrus, Jr. , Paul A. Kohl , Tien P. Lee , Frederick W. Ostermayer, Jr.
IPC分类号： H01L21/302 , H01L21/3063 , H01L21/465 , H01L33/00 , H01L33/28 , H01L33/30 , H01S5/02 , H01S5/10 , C25F3/12
CPC分类号： H01L33/28 , H01L21/30635 , H01L21/465 , H01L33/005 , H01L33/30 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/1039
摘要： A process is described for making semiconductor lasers with cleaved facets for end mirrors. The process involves electrochemically photoetching slots with deep, narrow cross-sections in a wafer and applying stress to cleave the wafer in the desired place. Extremely short and reproducible semiconductor lasers can be made by this procedure (less than 50 or even 25 .mu.m) which yields extremely useful semiconductor lasers particularly for communication applications. Also, the procedure requires a minimum of skill to produce excellent quality cleaved semiconductor lasers (including short-length lasers) with high yields.
摘要翻译：描述了用于制造具有用于端镜的切割面的半导体激光器的工艺。该方法涉及在晶片中电化学光刻槽，其具有深而窄的横截面，并施加应力以将晶片切割到期望的位置。可以通过这种方法（小于50甚至25微米）制造出非常短且可重复的半导体激光器，其产生非常有用的半导体激光器，特别是用于通信应用。此外，该方法需要最小的技术以产生具有高产率的优质的切割半导体激光器（包括短长度激光器）。

6. 发明授权

US4622114A Process of producing devices with photoelectrochemically produced gratings 失效
标题翻译：用光电化学生成的光栅制造器件的过程
公开(公告)号：US4622114A
公开(公告)日：1986-11-11
申请号：US684022
申请日：1984-12-20
申请人： Alastair M. Glass , Paul A. Kohl , Richard M. Lum , Frederick W. Ostermayer, Jr.
发明人： Alastair M. Glass , Paul A. Kohl , Richard M. Lum , Frederick W. Ostermayer, Jr.
IPC分类号： C25F3/12 , G02B6/124 , G02B6/34 , H01L21/3063 , H01S5/12 , H01S5/40
CPC分类号： H01S5/12 , C25F3/12 , G02B6/124 , H01L21/30635 , H01S5/1231 , H01S5/4025 , H01S5/4062 , H01S5/4087
摘要： A photoelectrochemical etching process is described for producing gratings in various semiconductors. Because this is a direct, single step process, extreme uniformity is obtained over a wide area. The procedure is particularly useful for mode reflection in distributed feedback lasers.
摘要翻译：描述了用于在各种半导体中制造光栅的光电化学蚀刻工艺。因为这是一个直接的，单步的过程，在广泛的领域获得了极大的均匀性。该过程对分布式反馈激光器中的模式反射特别有用。

7. 发明授权

US4404072A Photoelectrochemical processing of III-V semiconductors 失效
标题翻译： III-V半导体的光电化学处理
公开(公告)号：US4404072A
公开(公告)日：1983-09-13
申请号：US275805
申请日：1981-06-22
申请人： Paul A. Kohl , Frederick W. Ostermayer, Jr.
发明人： Paul A. Kohl , Frederick W. Ostermayer, Jr.
IPC分类号： C25F3/12 , C25F3/14 , H01L21/3063
CPC分类号： C25F3/14 , C25F3/12 , H01L21/30635
摘要： A photoelectrochemical process is described for anisotropic etching of intrinsic III-V compound semiconductors. Such a process is highly advantageous because the etching takes place only where light is incident on the surface of the semiconductor. Thus, various patterns can be etched into the semiconductor surface without the use of a mask, undercutting is minimized where masks are used and the shape of the hole etched out of the surface can be controlled.
摘要翻译：描述了用于内在III-V族化合物半导体的各向异性蚀刻的光电化学方法。这种方法是非常有利的，因为蚀刻仅在光入射到半导体的表面上时发生。因此，不用使用掩模，可以将各种图案蚀刻到半导体表面中，在使用掩模的情况下使底切最小化，并且可以控制蚀刻出表面的孔的形状。

8. 发明授权

US4369099A Photoelectrochemical etching of semiconductors 失效
标题翻译：半导体光电化学蚀刻
公开(公告)号：US4369099A
公开(公告)日：1983-01-18
申请号：US223356
申请日：1981-01-08
申请人： Paul A. Kohl , Frederick W. Ostermayer, Jr.
发明人： Paul A. Kohl , Frederick W. Ostermayer, Jr.
IPC分类号： C25F3/12 , C25F3/14 , H01L21/3063 , H01L21/465
CPC分类号： H01L21/30635 , C25F3/12 , C25F3/14 , H01L21/465 , Y10S204/09
摘要： A process is described for etching p-type semiconductors using a photoelectrochemical etching process. This etching process is highly advantageous because the etching site is highly defined by the incident light and the etching rate can be controlled in a number of ways including light intensity and electrode potential.
摘要翻译：描述了使用光电化学蚀刻工艺蚀刻p型半导体的工艺。该蚀刻工艺是非常有利的，因为蚀刻位置由入射光高度限定，并且蚀刻速率可以以包括光强度和电极电位在内的多种方式进行控制。

9. 发明授权

US07923194B2 Sacrificial compositions and methods of fabricating a structure using sacrificial compositions 有权
标题翻译：牺牲组合物和使用牺牲组合物制造结构的方法
公开(公告)号：US07923194B2
公开(公告)日：2011-04-12
申请号：US12273114
申请日：2008-11-18
申请人： Paul A. Kohl , Paul J. Joseph , Hollie K. Reed , Sue Ann Bidstrup-Allen , Celesta E. White , Clifford Henderson
发明人： Paul A. Kohl , Paul J. Joseph , Hollie K. Reed , Sue Ann Bidstrup-Allen , Celesta E. White , Clifford Henderson
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26
CPC分类号： B81C1/00476 , B81C2201/0108 , H01L21/7682 , Y10S430/114
摘要： Compositions, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary composition, among others, includes a polymer and a catalytic amount of a negative tone photoinitiator.
摘要翻译：提供了组合物，其使用方法及其分解方法。一个示例性组合物，其中包括聚合物和催化量的负色调光引发剂。

10. 发明申请

US20100307786A1 Packaging For Micro Electro-Mechanical Systems And Methods Of Fabricating Thereof 有权
标题翻译：微机电系统的包装及其制造方法
公开(公告)号：US20100307786A1
公开(公告)日：2010-12-09
申请号：US12797649
申请日：2010-06-10
申请人： Paul A. Kohl , Farrokh Ayazi , Paul J. Joseph
发明人： Paul A. Kohl , Farrokh Ayazi , Paul J. Joseph
IPC分类号： H05K5/06
CPC分类号： B81C1/00333 , B81C2201/0108 , B81C2203/0136 , B81C2203/0154 , H01L2224/48247 , H01L2224/49171 , H01L2924/1461 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： Embodiments of the present disclosure provide systems and methods for producing micro electro-mechanical device packages. Briefly described, in architecture, one embodiment of the system, among others, includes a micro electro-mechanical device formed on a substrate layer; and a thermally decomposable sacrificial structure protecting at least a portion of the micro electro-mechanical device, where the sacrificial structure is formed on the substrate layer and surrounds a gas cavity enclosing an active surface of the micro electro-mechanical device. Other systems and methods are also provided.
摘要翻译：本公开的实施例提供了用于生产微机电装置包装的系统和方法。简要描述，在架构中，系统的一个实施例包括形成在基底层上的微电子机械装置; 以及可热分解的牺牲结构，其保护所述微机电装置的至少一部分，其中所述牺牲结构形成在所述基底层上并且围绕包围所述微机电装置的有效表面的气体腔。还提供了其他系统和方法。

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