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1. 发明申请

US20140042457A1 SCHOTTKY DIODE 有权
标题翻译：肖特基二极管
公开(公告)号：US20140042457A1
公开(公告)日：2014-02-13
申请号：US14059379
申请日：2013-10-21
申请人： PANASONIC CORPORATION
发明人： Daisuke SHIBATA , Yoshiharu ANDA
IPC分类号： H01L29/872
CPC分类号： H01L29/872 , H01L29/08 , H01L29/152 , H01L29/2003 , H01L29/205 , H01L29/475
摘要： A Schottky diode has: a semiconductor layer stack including a GaN layer formed over a substrate and an AlGaN layer formed on the GaN layer and having a wider bandgap than the GaN layer; an anode electrode and a cathode electrode which are formed at an interval therebetween on the semiconductor layer stack; and a block layer formed in a region between the anode electrode and the cathode electrode so as to contact the AlGaN layer. A part of the anode electrode is formed on the block layer so as not to contact the surface of the AlGaN layer. The barrier height between the anode electrode and the block layer is greater than that between the anode electrode and the AlGaN layer.
摘要翻译：肖特基二极管具有：包括在衬底上形成的GaN层和形成在GaN层上并具有比GaN层更宽的带隙的AlGaN层的半导体层堆叠; 阳极电极和阴极电极，其间隔地形成在半导体层叠层上; 以及形成在阳极电极和阴极电极之间的区域中以与AlGaN层接触的阻挡层。阳极电极的一部分形成在阻挡层上，以便不与AlGaN层的表面接触。阳极电极和阻挡层之间的势垒高度大于阳极和AlGaN层之间的势垒高度。

2. 发明申请

US20140124867A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20140124867A1
公开(公告)日：2014-05-08
申请号：US14152681
申请日：2014-01-10
申请人： PANASONIC CORPORATION
发明人： Kazuhiro KAIBARA , Yoshiharu ANDA
IPC分类号： H01L23/528 , H01L23/522 , H01L29/423
CPC分类号： H01L23/528 , H01L23/4824 , H01L23/5226 , H01L29/41758 , H01L29/42356 , H01L29/7787 , H01L29/812 , H01L2924/0002 , H01L2924/00
摘要： A nitride semiconductor device includes: first electrode interconnect layers extending in parallel with one another over the nitride semiconductor layer and divided by areas extending across a longitudinal direction of the first electrode interconnect layers; first gate electrodes extending along the first electrode interconnect layers; first gate electrode connecting interconnects extending in associated ones of the areas dividing the first electrode interconnect layers and being in connection to the first gate electrodes; first electrode connecting interconnects formed above the first gate electrode connecting interconnects and being in connection to the first electrode interconnect layers; a first electrode upper interconnects formed on the first electrode connecting interconnects with an interconnect insulating film interposed therebetween, and being in connection to the first electrode connecting interconnects through associated ones of openings of the interconnect insulating film.
摘要翻译：氮化物半导体器件包括：在氮化物半导体层上彼此平行延伸并由横跨第一电极互连层的纵向方向延伸的区域划分的第一电极互连层; 第一栅电极沿着第一电极互连层延伸; 第一栅极电极连接互连，其延伸在划分第一电极互连层并且与第一栅电极连接的相关区域中; 第一电极连接互连，形成在第一栅极电极连接互连上并与第一电极互连层连接; 形成在第一电极上的第一电极上部互连件与插入其间的互连绝缘膜连接互连，并且与第一电极连接通过互连绝缘膜的相关联的开口连接互连。

3. 发明申请

US20140103459A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140103459A1
公开(公告)日：2014-04-17
申请号：US14107758
申请日：2013-12-16
申请人： Panasonic Corporation
发明人： Yusuke KINOSHITA , Satoshi TAMURA , Yoshiharu ANDA , Tetsuzo UEDA
IPC分类号： H01L29/49 , H01L29/20 , H01L29/66 , H01L29/78
CPC分类号： H01L29/49 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/66446 , H01L29/66462 , H01L29/66893 , H01L29/66924 , H01L29/7787 , H01L29/78 , H01L29/808
摘要： A semiconductor device includes: a channel layer made of GaN; a barrier layer formed on the channel layer, the bather layer being made of AlGaN and having a larger band gap than the channel layer; a p-type GaN layer selectively formed on the barrier layer; a gate electrode made of ITO on the p-type GaN layer; and a source electrode and a drain electrode on regions of the barrier layer laterally outward of the gate electrode. The width of the gate electrode in the gate length direction is smaller than or equal to the width of the p-type GaN layer in the gate length direction, and the difference between the width of the gate electrode in the gate length direction and the width of the p-type GaN layer in the gate length direction is less than or equal to 0.2 μm.
摘要翻译：半导体器件包括：由GaN制成的沟道层; 形成在沟道层上的阻挡层，所述泡沫层由AlGaN制成并且具有比沟道层更大的带隙; 选择性地形成在阻挡层上的p型GaN层; 在p型GaN层上由ITO制成的栅电极; 以及在栅电极的横向外侧的阻挡层的区域上的源电极和漏电极。栅电极的栅极长度方向的宽度小于或等于栅极长度方向上p型GaN层的宽度，栅极长度方向的栅极宽度与宽度在栅极长度方向上的p型GaN层的厚度小于或等于0.2μm。

4. 发明申请

US20130069115A1 FIELD EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20130069115A1
公开(公告)日：2013-03-21
申请号：US13676740
申请日：2012-11-14
申请人： Panasonic Corporation
发明人： Satoshi NAKAZAWA , Tetsuzo UEDA , Yoshiharu ANDA , Naohiro TSURUMI , Ryo KAJITANI
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L29/0891 , H01L29/2003 , H01L29/402 , H01L29/41775 , H01L29/42316 , H01L29/475 , H01L29/66462 , H01L29/7787
摘要： A field effect transistor includes a nitride semiconductor multilayer structure formed on a substrate, a source electrode, a drain electrode, a gate electrode, an insulating film formed on the nitride semiconductor multilayer structure, and a field plate formed on and in contact with the insulating film, and having an end located between the gate electrode and the drain electrode. The insulating film includes a first film, and a second film having a dielectric breakdown voltage lower than that of the first film, and a thin film portion formed between the gate electrode and the drain electrode is formed in the insulating film. The field plate covers the thin film portion, and is connected to the source electrode in an opening.
摘要翻译：场效应晶体管包括形成在衬底上的氮化物半导体多层结构，源电极，漏电极，栅电极，形成在氮化物半导体多层结构上的绝缘膜，以及形成在绝缘层上并与绝缘层形成接触的场板并且具有位于栅电极和漏电极之间的端部。绝缘膜包括第一膜和具有低于第一膜的介质击穿电压的第二膜，并且在绝缘膜中形成形成在栅电极和漏电极之间的薄膜部分。场板覆盖薄膜部分，并且在开口中连接到源电极。

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