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1. 发明申请

US20110189860A1 METHODS FOR NITRIDATION AND OXIDATION 审中-公开
标题翻译：硝化和氧化方法
公开(公告)号：US20110189860A1
公开(公告)日：2011-08-04
申请号：US13017904
申请日：2011-01-31
申请人： PETER PORSHNEV
发明人： PETER PORSHNEV
IPC分类号： H01L21/31
CPC分类号： H01L21/02332 , H01J37/32412 , H01L21/02323 , H01L21/02326 , H01L21/28202 , H01L21/28247 , H01L21/32105
摘要： Methods of nitridation and selective oxidation are provided herein. In some embodiments, a method of nitridation includes providing a substrate having a first layer disposed thereon, where the substrate is disposed on a substrate support in a process chamber; forming a remote plasma from a process gas comprising nitrogen; and exposing the first layer to a reactive species formed from the remote plasma to form a nitrogen-containing layer, wherein a density of the reactive species is about 109 to about 1017 molecules/cm3 and wherein a pressure in the chamber during exposure of the first layer is about 5 mTorr to about 3 Torr. In some embodiments, the nitrogen-containing layer is a gate dielectric layer for use in a semiconductor device.
摘要翻译：本文提供了氮化和选择性氧化的方法。在一些实施例中，一种氮化方法包括提供其上设置有第一层的衬底，其中衬底设置在处理室中的衬底支撑件上; 从包含氮气的工艺气体形成远程等离子体; 以及将所述第一层暴露于由所述远端等离子体形成的反应性物质以形成含氮层，其中所述反应性物质的密度为约109至约1017分子/ cm 3，并且其中所述室中的压力在所述第一层约5mTorr至约3Torr。在一些实施方案中，含氮层是用于半导体器件的栅极电介质层。

2. 发明申请

US20080138968A1 PLASMA IMMERSED ION IMPLANTATION PROCESS USING BALANCED ETCH-DEPOSITION PROCESS 有权
标题翻译：使用平衡蚀刻沉积工艺的等离子体离子植入工艺
公开(公告)号：US20080138968A1
公开(公告)日：2008-06-12
申请号：US11748876
申请日：2007-05-15
申请人： PETER PORSHNEV , Majeed A. Foad
发明人： PETER PORSHNEV , Majeed A. Foad
IPC分类号： H01L21/26
CPC分类号： H01L21/2236 , H01L29/66575
摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture including a reacting gas and a etching gas in the chamber, adjusting the ratio between the reacting gas and the etching gas in the supplied gas mixture and implanting ions from the plasma into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a halogen containing reducing gas into the chamber, forming a plasma from the gas mixture, gradually increasing the ratio of the etching gas in the gas mixture, and implanting ions from the gas mixture into the substrate.
摘要翻译：提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。在一个实施例中，用于将离子注入到衬底中的方法包括将衬底提供到处理室中，从腔室中的包括反应气体和蚀刻气体的气体混合物产生等离子体，调节反应气体与蚀刻物之间的比例在所提供的气体混合物中的气体和从等离子体离子注入衬底。在另一个实施方案中，该方法包括将基底提供到处理室中，将包含反应气体和含卤素的还原气体的气体混合物供应到室中，从气体混合物形成等离子体，逐渐增加蚀刻气体的比例气体混合物，并将离子从气体混合物中注入衬底中。

3. 发明申请

US20100267224A1 ENHANCED SCAVENGING OF RESIDUAL FLUORINE RADICALS USING SILICON COATING ON PROCESS CHAMBER WALLS 有权
标题翻译：使用硅涂层在过程室壁上增强残留氟化物的辐射
公开(公告)号：US20100267224A1
公开(公告)日：2010-10-21
申请号：US12758167
申请日：2010-04-12
申请人： DONGWON CHOI , DONG HYUNG LEE , TZE POON , MANOJ VELLAIKAL , PETER PORSHNEV , MAJEED FOAD
发明人： DONGWON CHOI , DONG HYUNG LEE , TZE POON , MANOJ VELLAIKAL , PETER PORSHNEV , MAJEED FOAD
IPC分类号： H01L21/22
CPC分类号： H01J37/32467 , C23C16/4404 , H01J37/32412 , H01J37/3244 , H01J37/32449 , H01J37/32477 , H01J37/32862 , H01J37/32871 , H01L21/2236
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.
摘要翻译：本文提供了用于处理衬底的方法和设备。在一些实施例中，一种用于衬底处理的装置包括具有限定内容积的室主体的处理室; 以及设置在所述室主体的内表面上的含硅涂层，其中所述含硅涂层的外表面为原子上至少35％的硅（Si）。在一些实施例中，在处理室中形成含硅涂层的方法包括向处理室的内部容积提供包括含硅气体的第一工艺气体; 以及在所述处理室的内表面上形成含硅涂层，其中所述含硅涂层的外表面为至少35％的硅。

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