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1. 发明申请

US20160301368A1 Hot Carrier Injection Compensation 有权
公开(公告)号：US20160301368A1
公开(公告)日：2016-10-13
申请号：US15188851
申请日：2016-06-21
申请人： Peregrine Semiconductor Corporation
发明人： Dan William Nobbe , Chris Olson , David Kovac
IPC分类号： H03F1/30 , H03F3/213 , H04L27/20 , H03F3/195
CPC分类号： H03F1/301 , H03F1/30 , H03F3/04 , H03F3/193 , H03F3/195 , H03F3/21 , H03F3/213 , H03F2200/18 , H03F2200/451 , H03F2200/456 , H03F2200/471 , H03F2200/555 , H04B1/18 , H04B1/44 , H04B1/525 , H04B7/015 , H04B7/02 , H04B15/005 , H04B17/12 , H04L27/20
摘要： Methods and devices are described for compensating an effect of aging due to, for example, hot carrier injection, or other device degradation mechanisms affecting a current flow, in an RF amplifier. In one case a replica circuit is used to sense the aging of the RF amplifier and adjust a biasing of the RF amplifier accordingly.

2. 发明申请

US20160191019A1 Methods and Apparatuses for use in Tuning Reactance in a Circuit Device 有权
公开(公告)号：US20160191019A1
公开(公告)日：2016-06-30
申请号：US14883512
申请日：2015-10-14
申请人： Peregrine Semiconductor Corporation
发明人： Ronald Eugene Reedy , Dan William Nobbe , Tero Tapio Ranta , Cheryl V. Liss , David Kovac
IPC分类号： H03H11/28
CPC分类号： H03K17/162 , H01F21/12 , H01G4/002 , H01G7/00 , H01L23/5223 , H01L27/0629 , H01L27/1203 , H01L28/60 , H03H7/0153 , H03H7/38 , H03H11/28 , H03J3/20 , H03J2200/10 , H03K17/102 , H03K17/687 , H03M1/1061 , H03M1/804
摘要： Methods and apparatuses for use in tuning reactance are described. Open loop and closed loop control for tuning of reactances are also described. Tunable inductors and/or tunable capacitors may be used in filters, resonant circuits, matching networks, and phase shifters. Ability to control inductance and/or capacitance in a circuit leads to flexibility in operation of the circuit, since the circuit may be tuned to operate under a range of different operating frequencies.

3. 发明授权

US09184702B2 Peak-to-average ratio detector 有权
标题翻译：峰均比检测器
公开(公告)号：US09184702B2
公开(公告)日：2015-11-10
申请号：US13962541
申请日：2013-08-08
申请人： Peregrine Semiconductor Corporation
发明人： David Kovac , Kelly Michael Mekechuk
IPC分类号： H03G3/20 , H03F1/02 , H03F1/32 , H03F3/19
CPC分类号： H03F1/0222 , H03F1/0233 , H03F1/32 , H03F3/19 , H03F2200/102 , H03F2200/451
摘要： An amplifier circuit with a peak-to-average ratio detector is described. Detection of the peak-to-average ratio value can be used to tune one or more parameters that affect linearity of one or more amplifiers in the amplifier circuit to improve amplifier performance.
摘要翻译：描述了具有峰均比检测器的放大器电路。峰值平均比值的检测可用于调整影响放大器电路中一个或多个放大器的线性度的一个或多个参数，以改善放大器性能。

4. 发明申请

US20150280655A1 Hot Carrier Injection Compensation 有权
标题翻译：热载体注射补偿
公开(公告)号：US20150280655A1
公开(公告)日：2015-10-01
申请号：US14242373
申请日：2014-04-01
申请人： PEREGRINE SEMICONDUCTOR CORPORATION
发明人： Dan William Nobbe , Chris Olson , David Kovac
IPC分类号： H03F1/30 , H03F3/21 , H03F3/193
CPC分类号： H03F1/301 , H03F1/30 , H03F3/04 , H03F3/193 , H03F3/195 , H03F3/21 , H03F3/213 , H03F2200/18 , H03F2200/451 , H03F2200/456 , H03F2200/471 , H03F2200/555 , H04B1/18 , H04B1/44 , H04B1/525 , H04B7/015 , H04B7/02 , H04B15/005 , H04B17/12 , H04L27/20
摘要： Methods and devices are described for compensating an effect of aging due to, for example, hot carrier injection, or other device degradation mechanisms affecting a current flow, in an RF amplifier. In one case a replica circuit is used to sense the aging of the RF amplifier and adjust a biasing of the RF amplifier accordingly.
摘要翻译：描述了用于补偿由于例如热载流子注入引起的老化的影响或影响RF放大器中的电流的其它器件劣化机制的方法和装置。在一种情况下，复制电路用于感测RF放大器的老化并相应地调整RF放大器的偏置。

5. 发明申请

US20180097509A1 Methods and Apparatuses for Use in Tuning Reactance in a Circuit Device 审中-公开
公开(公告)号：US20180097509A1
公开(公告)日：2018-04-05
申请号：US15688658
申请日：2017-08-28
申请人： Peregrine Semiconductor Corporation
发明人： Ronald Eugene Reedy , Dan William Nobbe , Tero Tapio Ranta , Cheryl V. Liss , David Kovac
IPC分类号： H03H11/28 , H03H7/38 , H01G7/00 , H03M1/10 , H03K17/687 , H03K17/16 , H03J3/20 , H01F21/12 , H03H7/01 , H01L49/02 , H01L27/12 , H01L27/06 , H01L23/522 , H03M1/80
CPC分类号： H03K17/162 , H01F21/12 , H01G4/002 , H01G7/00 , H01L23/5223 , H01L27/0629 , H01L27/1203 , H01L28/60 , H03H7/0153 , H03H7/38 , H03H11/28 , H03J3/20 , H03J2200/10 , H03K17/102 , H03K17/687 , H03M1/1061 , H03M1/804
摘要： Methods and apparatuses for use in tuning reactance are described. Open loop and closed loop control for tuning of reactances are also described. Tunable inductors and/or tunable capacitors may be used in filters, resonant circuits, matching networks, and phase shifters. Ability to control inductance and/or capacitance in a circuit leads to flexibility in operation of the circuit, since the circuit may be tuned to operate under a range of different operating frequencies.

6. 发明授权

US09281786B2 Input power detecting arrangement and method 有权
标题翻译：输入功率检测装置及方法
公开(公告)号：US09281786B2
公开(公告)日：2016-03-08
申请号：US13958432
申请日：2013-08-02
申请人： Peregrine Semiconductor Corporation
发明人： David Kovac
IPC分类号： H03F1/14 , H03F3/189 , H03F1/02 , H03F3/72 , H03F3/04
CPC分类号： H03F3/189 , H03F1/0277 , H03F3/04 , H03F3/72 , H03F2200/228 , H03F2200/465
摘要： An amplifier circuit with an input power detector and a related method are described. With the input power detector and related control network, the arrangement enables and/or disables a number of unit cells in power amplifiers.
摘要翻译：描述了具有输入功率检测器和相关方法的放大器电路。利用输入功率检测器和相关控制网络，该布置使能和/或禁用功率放大器中的多个单元。

7. 发明申请

US20150270806A1 Bias Control for Stacked Transistor Configuration 有权
标题翻译：用于堆叠晶体管配置的偏置控制
公开(公告)号：US20150270806A1
公开(公告)日：2015-09-24
申请号：US14626833
申请日：2015-02-19
申请人： Peregrine Semiconductor Corporation
发明人： Poojan Wagh , Joseph Golat , David Kovac , Jeffrey A. Dykstra , Chris Olson
IPC分类号： H03F1/02 , H03F3/21 , H03F3/19
CPC分类号： H03F3/211 , H03F1/0227 , H03F1/0244 , H03F1/025 , H03F1/0277 , H03F1/223 , H03F1/3247 , H03F1/3282 , H03F1/56 , H03F3/195 , H03F3/24 , H03F3/45183 , H03F3/45188 , H03F2200/102 , H03F2200/108 , H03F2200/15 , H03F2200/18 , H03F2200/222 , H03F2200/336 , H03F2200/387 , H03F2200/408 , H03F2200/411 , H03F2200/451 , H03F2200/534 , H03F2200/537 , H03F2200/541 , H03F2200/61 , H03F2200/78 , H03F2201/3233 , H03F2203/21127 , H03F2203/45366 , H03F2203/45544 , H03F2203/45638 , H03F2203/45731
摘要： Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can be an envelope tracking amplifier. Circuital arrangements to generate reference gate-to-source voltages for biasing of the gates of the transistors of the stack are also presented. Particular biasing for a case of an input transistor of the stack is also presented.
摘要翻译：提出了用于偏置放大器的堆叠晶体管的一个或多个栅极的各种方法和电路布置，其中放大器可以是包络跟踪放大器。还提供了用于产生用于堆叠的晶体管的栅极的偏置的参考栅极至源极电压的电路布置。还提出了对堆叠的输入晶体管的情况的特定偏置。

8. 发明申请

US20150035593A1 Input Power Detecting Arrangement and Method 有权
标题翻译：输入功率检测布置和方法
公开(公告)号：US20150035593A1
公开(公告)日：2015-02-05
申请号：US13958432
申请日：2013-08-02
申请人： Peregrine Semiconductor Corporation
发明人： David Kovac
IPC分类号： H03F1/02
CPC分类号： H03F3/189 , H03F1/0277 , H03F3/04 , H03F3/72 , H03F2200/228 , H03F2200/465
摘要： An amplifier circuit with an input power detector and a related method are described. With the input power detector and related control network, the arrangement enables and/or disables a number of unit cells in power amplifiers.
摘要翻译：描述了具有输入功率检测器和相关方法的放大器电路。利用输入功率检测器和相关控制网络，该布置使能和/或禁用功率放大器中的多个单元。

9. 发明申请

US20150028953A1 Scalable Periphery for Digital Power Control 有权
标题翻译：数字电源控制的可扩展外设
公开(公告)号：US20150028953A1
公开(公告)日：2015-01-29
申请号：US13948756
申请日：2013-07-23
申请人： Peregrine Semiconductor Corporation
发明人： David Kovac
IPC分类号： H03F3/26 , H03F3/45
CPC分类号： H03F1/0261 , H03F1/0277 , H03F1/223 , H03F3/193 , H03F3/211 , H03F3/245 , H03F3/72 , H03F2200/15 , H03F2203/7236
摘要： A scalable periphery digital power control arrangement is presented. The scalable periphery digital power control arrangement comprises a plurality of PMOS transistors connected in parallel, where the plurality of transistors is operatively coupled to a voltage source. The plurality of PMOS transistors that is operatively coupled to the voltage source can operate as a controlled current source. Current flow from the voltage source can be controlled by a logic circuit, which sends a logic signal to enable or disable each individual PMOS transistor of the plurality of PMOS transistors connected in parallel. As more PMOS transistors are enabled, the current flow through the scalable periphery digital power control arrangement to the amplifier can increase.
摘要翻译：提出了一种可扩展的外围数字功率控制装置。可扩展的周边数字功率控制装置包括并联连接的多个PMOS晶体管，其中多个晶体管可操作地耦合到电压源。可操作地耦合到电压源的多个PMOS晶体管可以作为受控电流源工作。来自电压源的电流可以由逻辑电路来控制，该逻辑电路发送逻辑信号以使能或禁用并联连接的多个PMOS晶体管的各个PMOS晶体管。随着更多的PMOS晶体管被使能，可以增加通过可扩展外围数字功率控制装置到放大器的电流。

10. 发明授权

US09800211B2 Hot carrier injection compensation 有权
公开(公告)号：US09800211B2
公开(公告)日：2017-10-24
申请号：US15188851
申请日：2016-06-21
申请人： Peregrine Semiconductor Corporation
发明人： Dan William Nobbe , Chris Olson , David Kovac
IPC分类号： H03F3/04 , H03F1/14 , H03F1/30 , H04B1/44 , H04B17/12 , H04B7/015 , H04B7/02 , H04B15/00 , H04B1/18 , H03F3/193 , H03F3/21 , H04B1/525 , H03F3/195 , H03F3/213 , H04L27/20
CPC分类号： H03F1/301 , H03F1/30 , H03F3/04 , H03F3/193 , H03F3/195 , H03F3/21 , H03F3/213 , H03F2200/18 , H03F2200/451 , H03F2200/456 , H03F2200/471 , H03F2200/555 , H04B1/18 , H04B1/44 , H04B1/525 , H04B7/015 , H04B7/02 , H04B15/005 , H04B17/12 , H04L27/20
摘要： Methods and devices are described for compensating an effect of aging due to, for example, hot carrier injection, or other device degradation mechanisms affecting a current flow, in an RF amplifier. In one case a replica circuit is used to sense the aging of the RF amplifier and adjust a biasing of the RF amplifier accordingly.

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