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1. 发明授权

US08999609B2 Phase shift mask blank, method of manufacturing the same, and phase shift mask 有权
标题翻译：相移掩模空白，其制造方法和相移掩模
公开(公告)号：US08999609B2
公开(公告)日：2015-04-07
申请号：US13639686
申请日：2011-04-08
申请人： Osamu Nozawa , Hiroaki Shishido , Kazuya Sakai
发明人： Osamu Nozawa , Hiroaki Shishido , Kazuya Sakai
IPC分类号： G03F1/32 , G03F1/60 , C23C14/00 , C23C14/06 , G03F1/54 , G03F7/20 , B82Y30/00
CPC分类号： G03F1/32 , B82Y30/00 , C23C14/0036 , C23C14/0641 , G03F1/26 , G03F1/54 , G03F7/2041 , Y10S977/755
摘要： Provided are a phase shift mask blank that is improved in the irradiation durability of a light-semitransmissive film (phase shift film), made of a material containing mainly a transition metal, silicon, and nitrogen, to exposure light having a wavelength of 200 nm or less and thus can improve the mask lifetime, a method of manufacturing such a phase shift mask blank, and a phase shift mask. The phase shift mask blank is used for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light. The phase shift mask blank has a light-semitransmissive film on a transparent substrate. The light-semitransmissive film is an incomplete nitride film containing mainly a transition metal, silicon, and nitrogen. The content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film is less than 9%.
摘要翻译：提供一种相位移掩模坯料，其将由主要包含过渡金属，硅和氮的材料制成的光半透射膜（相移膜）的照射耐久性提高到具有200nm波长的曝光光或更小，从而可以改善掩模寿命，制造这种相移掩模坯料的方法和相移掩模。相移掩模空白用于制造适于施加ArF准分子激光曝光光的相移掩模。相移掩模空白在透明基板上具有轻半透射膜。轻半透射膜是主要包含过渡金属，硅和氮的不完全氮化物膜。过渡金属与过渡金属和轻半透射膜中的硅的含量比小于9％。

2. 发明申请

US20130071777A1 PHASE SHIFT MASK BLANK, METHOD OF MANUFACTURING THE SAME, AND PHASE SHIFT MASK 有权
公开(公告)号：US20130071777A1
公开(公告)日：2013-03-21
申请号：US13639686
申请日：2011-04-08
申请人： Osamu Nozawa , Hiroaki Shishido , Kazuya Sakai
发明人： Osamu Nozawa , Hiroaki Shishido , Kazuya Sakai
IPC分类号： G03F1/32 , G03F7/20
CPC分类号： G03F1/32 , B82Y30/00 , C23C14/0036 , C23C14/0641 , G03F1/26 , G03F1/54 , G03F7/2041 , Y10S977/755
摘要： Provided are a phase shift mask blank that is improved in the irradiation durability of a light-semitransmissive film (phase shift film), made of a material containing mainly a transition metal, silicon, and nitrogen, to exposure light having a wavelength of 200 nm or less and thus can improve the mask lifetime, a method of manufacturing such a phase shift mask blank, and a phase shift mask. The phase shift mask blank is used for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light. The phase shift mask blank has a light-semitransmissive film on a transparent substrate.The light-semitransmissive film is an incomplete nitride film containing mainly a transition metal, silicon, and nitrogen. The content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film is less than 9%.

3. 发明授权

US08524421B2 Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device 有权
标题翻译：掩模空白，转印掩模，其制造方法和制造半导体器件的方法
公开(公告)号：US08524421B2
公开(公告)日：2013-09-03
申请号：US13076254
申请日：2011-03-30
申请人： Osamu Nozawa , Hiroaki Shishido , Toshiyuki Suzuki
发明人： Osamu Nozawa , Hiroaki Shishido , Toshiyuki Suzuki
IPC分类号： G03F1/50
CPC分类号： G03F1/80 , G03F1/50 , G03F1/54 , G03F1/58
摘要： In a mask blank for manufacturing a transfer mask, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film. The highly oxidized layer is placed on a side opposite to a transparent substrate side.
摘要翻译：在用于制造转印掩模的掩模坯料中，掩模坯料在透明基板上具有遮光膜。遮光膜由含有钽作为主要金属成分的材料制成，并且包含氧含量为60原子％以上且形成为遮光膜的表面层的高度氧化层。高氧化层位于与透明基板侧相反的一侧。

4. 发明授权

US08435704B2 Mask blank, transfer mask, and methods of manufacturing the same 有权
标题翻译：掩模空白，转印掩模及其制造方法
公开(公告)号：US08435704B2
公开(公告)日：2013-05-07
申请号：US12875783
申请日：2010-09-03
申请人： Osamu Nozawa , Hiroaki Shishido
发明人： Osamu Nozawa , Hiroaki Shishido
IPC分类号： G03F1/22
CPC分类号： G03F1/54 , G03F1/50
摘要： In a mask blank for manufacturing a transfer mask adapted to exposure light having a wavelength of 200 nm or less, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film, that is placed on a side opposite to a transparent substrate side.
摘要翻译：在用于制造适于曝光波长为200nm以下的光的转印掩模的掩模坯料中，掩模坯料在透明基板上具有遮光膜。遮光膜由含有钽作为主要金属成分的材料制成，并且包含氧含量为60原子％以上且形成为遮光膜的表面层的高度氧化层，放置在与透明基板侧相对的一侧。

5. 发明授权

US08846274B2 Mask blank, transfer mask and process for manufacturing semiconductor devices 有权
标题翻译：掩模空白，传输掩模和制造半导体器件的工艺
公开(公告)号：US08846274B2
公开(公告)日：2014-09-30
申请号：US13605125
申请日：2012-09-06
申请人： Hiroaki Shishido , Osamu Nozawa , Atsushi Kominato
发明人： Hiroaki Shishido , Osamu Nozawa , Atsushi Kominato
IPC分类号： G03F1/00 , G03F1/50
CPC分类号： C03C17/3411 , C03C17/3423 , C03C17/3435 , G03F1/38
摘要： The present invention is the mask blank includes a glass substrate and a thin film formed on a main surface of the glass substrate, the thin film includes a material containing tantalum and substantially no hydrogen, and the mask blank has a invasion suppressive film between the main surface of the glass substrate and the thin film which suppresses hydrogen from being invaded from the glass substrate into the thin film.
摘要翻译：本发明的掩模坯料包括玻璃基板和形成在玻璃基板的主表面上的薄膜，该薄膜包括含有钽并且基本上不含氢的材料，掩模坯料在主体之间具有侵入抑制膜玻璃基板的表面和抑制氢从玻璃基板侵入薄膜的薄膜。

6. 发明授权

US08512916B2 Photomask blank, photomask, and method for manufacturing photomask blank 有权
公开(公告)号：US08512916B2
公开(公告)日：2013-08-20
申请号：US12935766
申请日：2009-03-31
申请人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto , Morio Hosoya
发明人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto , Morio Hosoya
IPC分类号： G03F1/26 , G03F1/46 , G03F1/50 , G03F1/58
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.

7. 发明授权

US08304147B2 Photomask blank, photomask, and method for manufacturing photomask blank 有权
标题翻译：光掩模坯料，光掩模以及制造光掩模坯料的方法
公开(公告)号：US08304147B2
公开(公告)日：2012-11-06
申请号：US12935517
申请日：2009-03-31
申请人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
发明人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
IPC分类号： G03F1/20
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 30% or less of the thickness of the entire light-shielding film.
摘要翻译：本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中背面防反射层，遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为60nm以下; 背面抗反射层由含有金属的膜制成，具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成，具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成，并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的30％以下。

8. 发明申请

US20110104592A1 PHOTOMASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK BLANK 有权
标题翻译： PHOTOMASK BLANK，PHOTOMASK和制造光电隔离层的方法
公开(公告)号：US20110104592A1
公开(公告)日：2011-05-05
申请号：US12935517
申请日：2009-03-31
申请人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
发明人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
IPC分类号： G03F1/00
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 30% or less of the thickness of the entire light-shielding film.
摘要翻译：本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中背面防反射层，遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为60nm以下; 背面抗反射层由含有金属的膜制成，具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成，具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成，并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的30％以下。

9. 发明申请

US20070052955A1 Method and equipment for detecting pattern defect 失效
标题翻译：检测图案缺陷的方法和设备
公开(公告)号：US20070052955A1
公开(公告)日：2007-03-08
申请号：US11593091
申请日：2006-11-06
申请人： Hiroaki Shishido , Yasuhiro Yoshitake , Toshihiko Nakata , Shunji Maeda , Minoru Yoshida , Sachio Uto
发明人： Hiroaki Shishido , Yasuhiro Yoshitake , Toshihiko Nakata , Shunji Maeda , Minoru Yoshida , Sachio Uto
IPC分类号： G01N21/88 , G01J4/00
CPC分类号： G01N21/9501 , G01J3/0218 , G01J3/0224 , G01J3/10 , G01N21/8851 , G01N21/956 , G01N21/95607 , G01N2021/479 , G01N2021/95676 , G01N2201/06113 , G02B5/09 , G02B21/365 , G02B26/12
摘要： An Inspection apparatus and method includes utilizing an emitter which emits a light beam, an illumination optical system, a detection optical system, and a processor. The illumination optical system includes a polarization controller, a coherence reducer, and an objective lens, for illuminating a specimen with a polarization condition controlled and coherency reduced light beam through the objective lens. The detection optical system includes an imaging lens and a sensor for detecting an image of the specimen illuminated by the light beam through the illumination optical system. The processor processes a signal outputted from the sensor and detects a defect on the specimen.
摘要翻译：检查装置和方法包括利用发射光束的发射器，照明光学系统，检测光学系统和处理器。照明光学系统包括偏振控制器，相干减少器和物镜，用于照射具有偏振状态的样本并通过物镜降低光束的相干性。检测光学系统包括成像透镜和用于检测由通过照明光学系统的光束照射的样本的图像的传感器。处理器处理从传感器输出的信号并检测样本上的缺陷。

10. 发明授权

US07132669B2 Method and equipment for detecting pattern defect 有权
标题翻译：检测图案缺陷的方法和设备
公开(公告)号：US07132669B2
公开(公告)日：2006-11-07
申请号：US11184981
申请日：2005-07-20
申请人： Hiroaki Shishido , Yasuhiro Yoshitake , Toshihiko Nakata , Shunji Maeda , Minoru Yoshida , Sachio Uto
发明人： Hiroaki Shishido , Yasuhiro Yoshitake , Toshihiko Nakata , Shunji Maeda , Minoru Yoshida , Sachio Uto
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01J3/0218 , G01J3/0224 , G01J3/10 , G01N21/8851 , G01N21/956 , G01N21/95607 , G01N2021/479 , G01N2021/95676 , G01N2201/06113 , G02B5/09 , G02B21/365 , G02B26/12
摘要： An Inspection apparatus and method includes utilizing a laser source which emits an ultraviolet laser beam, an illumination optical system, a detection optical system, and a processor. The illumination optical system includes a polarization controller, a coherence reducer and an objective lens for illuminating a specimen with a polarization condition controlled and coherency reduced ultraviolet laser beam through the objective lens. The detection optical system includes an imaging lens and a sensor for detecting an image of the specimen illuminated by the ultraviolet laser beam through the illumination optical system. The processor processes a signal outputted from the sensor and detects a defect on the specimen.
摘要翻译：一种检查装置和方法，包括利用发射紫外激光束的激光源，照明光学系统，检测光学系统和处理器。照明光学系统包括偏振控制器，相干减少器和用于照射具有偏振状态的样本的物镜，并且通过物镜减少紫外激光束的相干性。检测光学系统包括成像透镜和用于检测通过照明光学系统由紫外线激光束照射的样本的图像的传感器。处理器处理从传感器输出的信号并检测样本上的缺陷。

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