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1. 发明授权

US08234842B2 Wound dressing and apparatus for forming same 失效
标题翻译：伤口敷料和成型装置
公开(公告)号：US08234842B2
公开(公告)日：2012-08-07
申请号：US12198676
申请日：2008-08-26
申请人： Oleg Siniaguine
发明人： Oleg Siniaguine
IPC分类号： B65B61/06
CPC分类号： A61F13/022 , A61F13/00995 , A61F13/023 , A61F13/0289 , A61F15/001 , A61F15/02 , A61F2013/00255 , A61F2013/00727 , A61F2013/00863
摘要： A multi-layered wound dressing includes a moisture-retaining portion for enhancing the healing of a wound. The wound dressing includes an intermediate layer that has both water soluble and water insoluble fibers. An apparatus that includes a cutting tool and a reservoir of liquid to pre-moisten a portion of the dressing may be used to manufacture the dressings.
摘要翻译：多层伤口敷料包括用于增强伤口愈合的保湿部分。伤口敷料包括具有水溶性和水不溶性纤维两者的中间层。包括切割工具和用于预润湿敷料的一部分的液体储存器的装置可用于制造敷料。

2. 发明申请

US20050106845A1 Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same 有权
标题翻译：在开口中具有多个导电层的半导体结构及其制造方法
公开(公告)号：US20050106845A1
公开(公告)日：2005-05-19
申请号：US11014464
申请日：2004-12-16
申请人： Patrick Halahan , Oleg Siniaguine
发明人： Patrick Halahan , Oleg Siniaguine
IPC分类号： H01L29/872 , H01L21/3205 , H01L21/329 , H01L21/768 , H01L21/822 , H01L23/48 , H01L23/52 , H01L23/552 , H01L27/04 , H01L29/47 , H01L29/861 , H01L21/76 , H01L21/28 , H01L21/301 , H01L21/44 , H01L21/46 , H01L21/78
CPC分类号： H01L23/552 , H01L21/76898 , H01L23/481 , H01L2223/6622 , H01L2224/16 , H01L2924/04941 , H01L2924/12032 , H01L2924/3025 , Y10S438/977 , H01L2924/00
摘要： In some embodiments, a circuit structure comprises a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers in the opening. In some embodiments, one conductive layer provides an electromagnetic shield that shields the substrate from AC signals carried by a contact pad made from another conductive layer on a backside of the substrate. The conductive layers can also be used to form capacitor/rectifier networks. Manufacturing methods also provided.
摘要翻译：在一些实施例中，电路结构包括半导体衬底，在衬底的第一侧和衬底的第二侧之间穿过衬底的开口以及开口中的多个导电层。在一些实施例中，一个导电层提供电磁屏蔽，其屏蔽基板与由衬底背面上的另一导电层制成的接触焊盘承载的交流信号。导电层也可用于形成电容器/整流器网络。还提供了制造方法。

3. 发明授权

US06740582B2 Integrated circuits and methods for their fabrication 有权
标题翻译：集成电路及其制造方法
公开(公告)号：US06740582B2
公开(公告)日：2004-05-25
申请号：US10133595
申请日：2002-04-26
申请人： Oleg Siniaguine
发明人： Oleg Siniaguine
IPC分类号： H01L214763
CPC分类号： H01L21/441 , H01L21/304 , H01L21/3065 , H01L21/76898 , H01L23/481 , H01L23/482 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/0401 , H01L2224/0557 , H01L2224/05572 , H01L2224/13025 , H01L2225/06513 , H01L2225/06541 , H01L2225/06593 , H01L2924/0002 , H01L2924/014 , H01L2924/14 , H01L2924/00012 , H01L2224/05552
摘要： To fabricate back side contact pads that are suitable for use in a vertical integrated circuit, vias are made in the face side of a wafer, and dielectric and contact pad metal are deposited into the vias. Then the wafer back side is etched until the metal is exposed. When the etch exposes the insulator at the via bottoms, the insulator is etched slower than the wafer material (e.g. silicon). Therefore, when the dielectric is etched off and the metal is exposed, the dielectric protrudes down from the wafer back side around the exposed metal contact pads, by about 8 &mgr;m in some embodiments. The protruding dielectric portions improve insulation between the wafer and the contact pads when the contact pads are soldered to an underlying circuit. In some embodiments, before the contact pads are soldered, additional dielectric is grown on the wafer back side without covering the contact pads. In some embodiments, the wafer etch and the fabrication of the additional dielectric are performed one after another by a plasma process while the wafer is held in a non-contact wafer holder. In some embodiments, the wafer is diced and the dice are tested before the etch. The etch and the deposition of the additional dielectric are performed on good dice only. In some embodiments, the dice are not used for vertical integration.
摘要翻译：为了制造适合于在垂直集成电路中使用的背面接触焊盘，在晶片的正面侧形成通孔，并且将电介质和接触垫金属沉积到通孔中。然后蚀刻晶片背面，直到金属露出。当蚀刻在通孔底部暴露绝缘体时，绝缘体被蚀刻比晶片材料（例如硅）慢。因此，当电介质被蚀刻并且金属被暴露时，在一些实施例中，电介质从暴露的金属接触焊盘周围的晶片背面向下突出大约8μm。当接触焊盘焊接到底层电路时，突出的电介质部分改善晶片和接触焊盘之间的绝缘。在一些实施例中，在接触焊盘被焊接之前，在晶片背面上生长附加电介质，而不覆盖接触焊盘。在一些实施例中，当晶片保持在非接触晶片保持器中时，通过等离子体处理一个接一个地执行晶片蚀刻和附加电介质的制造。在一些实施例中，切割晶片，并且在蚀刻之前测试晶片。附加电介质的蚀刻和沉积仅在良好的骰子上进行。在一些实施例中，骰子不用于垂直整合。

4. 发明授权

US06730540B2 Clock distribution networks and conductive lines in semiconductor integrated circuits 有权
标题翻译：半导体集成电路中的时钟分配网络和导线
公开(公告)号：US06730540B2
公开(公告)日：2004-05-04
申请号：US10127144
申请日：2002-04-18
申请人： Oleg Siniaguine
发明人： Oleg Siniaguine
IPC分类号： H01L2144
CPC分类号： H01L21/563 , G06F1/10 , H01L21/561 , H01L21/568 , H01L23/3121 , H01L23/3128 , H01L23/481 , H01L23/49833 , H01L23/528 , H01L23/5283 , H01L24/97 , H01L2224/05001 , H01L2224/05008 , H01L2224/05009 , H01L2224/05023 , H01L2224/05024 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2224/73203 , H01L2924/01019 , H01L2924/12042 , H01L2924/14 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00
摘要： A clock distribution network (110) is formed on a semiconductor interposer (320) which is a semiconductor integrated circuit. An input terminal (120) of the clock distribution network is formed on one side of the interposer, and output terminals (130) of the clock distribution network are formed on the opposite side of the interposer. The interposer has a through hole (360), and the clock distribution network includes a conductive feature going through the through hole. The side of the interposer which has the output terminals (130) is bonded to a second integrated circuit (310) containing circuitry clocked by the clock distribution network. The other side of the interposer is bonded to a third integrated circuit or a wiring substrate (330). The interposer contains a ground structure, or ground structures (390, 510), that shield circuitry from the clock distribution network. Conductive lines (150) in an integrated circuit are formed in trenches (610) in a semiconductor substrate.
摘要翻译：时钟分配网络（110）形成在作为半导体集成电路的半导体插入器（320）上。时钟分配网络的输入端子（120）形成在插入器的一侧上，时钟分配网络的输出端子（130）形成在插入器的相对侧。插入器具有通孔（360），并且时钟分配网络包括穿过通孔的导电特征。具有输出端子（130）的插入器侧被接合到包含由时钟分配网络计时的电路的第二集成电路（310）。插入器的另一侧被结合到第三集成电路或布线基板（330）。插入器包含一个接地结构，或者将电路从时钟分配网络屏蔽的接地结构（390,510）。集成电路中的导电线（150）形成在半导体衬底中的沟槽（610）中。

5. 发明授权

US06448153B2 Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners 有权
标题翻译：使用干蚀刻对半导体晶片进行薄化和切割，并获得具有圆形底部边缘和拐角的半导体芯片
公开(公告)号：US06448153B2
公开(公告)日：2002-09-10
申请号：US09752802
申请日：2000-12-28
申请人： Oleg Siniaguine , Patrick Halahan , Sergey Savastiouk
发明人： Oleg Siniaguine , Patrick Halahan , Sergey Savastiouk
IPC分类号： H01L21301
CPC分类号： H01L25/50 , H01L21/76898 , H01L21/78 , H01L23/481 , H01L23/482 , H01L25/0657 , H01L29/0657 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/014 , H01L2924/10158 , H01L2924/14
摘要： A semiconductor wafer is diced before thinning. The wafer is diced only part of the way through, to form grooves which are at least as deep as the final thickness of each chip to be obtained from the wafer. Then, the wafer is placed into a non-contact wafer holder, and the wafer backside is blanket etched with a dry etch, for example, atmospheric pressure plasma etch. The wafer is thinned until the grooves are exposed from the backside. The dry etch leaves the chip's backside smooth. After the grooves have been exposed, the dry etch is continued to remove damage from the chip sidewalls and to round the chips' bottom edges and coners. As a result, the chip becomes more reliable, and in particular more resistant to thermal and other stresses.
摘要翻译：在变薄之前切割半导体晶片。晶片仅被部分通过切割，以形成至少与从晶片获得的每个芯片的最终厚度相同的凹槽。然后，将晶片放置在非接触晶片保持器中，并且用干蚀刻（例如，大气压等离子体蚀刻）对晶片背面进行全面蚀刻。将晶片减薄直到凹槽从背面露出。干蚀刻使芯片的背面光滑。在凹槽已经暴露之后，继续进行干法蚀刻以去除芯片侧壁的破坏并绕过芯片的底部边缘和锥体。结果，芯片变得更可靠，特别是更耐热和其它应力。

6. 发明授权

US06184060B2 Integrated circuits and methods for their fabrication 失效
标题翻译：集成电路及其制造方法
公开(公告)号：US06184060B2
公开(公告)日：2001-02-06
申请号：US09083927
申请日：1998-05-22
申请人： Oleg Siniaguine
发明人： Oleg Siniaguine
IPC分类号： H01L2148
CPC分类号： H01L21/441 , H01L21/304 , H01L21/3065 , H01L21/76898 , H01L23/481 , H01L23/482 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/0401 , H01L2224/0557 , H01L2224/05572 , H01L2224/13025 , H01L2225/06513 , H01L2225/06541 , H01L2225/06593 , H01L2924/0002 , H01L2924/014 , H01L2924/14 , H01L2924/00012 , H01L2224/05552
摘要： To fabricate back side contact pads that are suitable for use in a vertical integrated circuit, vias are made in the face side of a wafer, and dielectric and contact pad metal are deposited into the vias. Then the wafer back side is etched until the metal is exposed. When the etch exposes the insulator at the via bottoms, the insulator is etched slower than the wafer material (e.g. silicon). Therefore, when the dielectric is etched off and the metal is exposed, the dielectric protrudes down from the wafer back side around the exposed metal contact pads, by about 8 &mgr;m in some embodiments. The protruding dielectric portions improve insulation between the wafer and the contact pads when the contact pads are soldered to an underlying circuit. In some embodiments, before the contact pads are soldered, additional dielectric is grown on the wafer back side without covering the contact pads. In some embodiments, the wafer etch and the fabrication of the additional dielectric are performed one after another by a plasma process while the wafer is held in a non-contact wafer holder. In some embodiments, the wafer is diced and the dice are tested before the etch. The etch and the deposition of the additional dielectric are performed on good dice only. In some embodiments, the dice are not used for vertical integration.
摘要翻译：为了制造适合于在垂直集成电路中使用的背面接触焊盘，在晶片的正面侧形成通孔，并且将电介质和接触垫金属沉积到通孔中。然后蚀刻晶片背面，直到金属露出。当蚀刻在通孔底部暴露绝缘体时，绝缘体被蚀刻比晶片材料（例如硅）慢。因此，当电介质被蚀刻并且金属被暴露时，在一些实施例中，电介质从暴露的金属接触焊盘周围的晶片背面向下突出大约8μm。当接触焊盘焊接到底层电路时，突出的电介质部分改善晶片和接触焊盘之间的绝缘。在一些实施例中，在接触焊盘被焊接之前，在晶片背面上生长附加电介质，而不覆盖接触焊盘。在一些实施例中，当晶片保持在非接触晶片保持器中时，通过等离子体处理一个接一个地执行晶片蚀刻和附加电介质的制造。在一些实施例中，切割晶片，并且在蚀刻之前测试晶片。附加电介质的蚀刻和沉积仅在良好的骰子上进行。在一些实施例中，骰子不用于垂直整合。

7. 发明申请

US20120215193A1 SELF-ADAPTIVE AND OPTIONALLY ALSO OTHERWISE ADAPTABLE WOUND DRESSING 有权
标题翻译：自适应和可选择还有其他适应性的衣服
公开(公告)号：US20120215193A1
公开(公告)日：2012-08-23
申请号：US13402170
申请日：2012-02-22
申请人： Oleg Siniaguine , Elena Kachiguina
发明人： Oleg Siniaguine , Elena Kachiguina
IPC分类号： A61L15/60 , A61L15/22 , A61F13/511
CPC分类号： A61F13/00046 , A61F13/00029 , A61F13/00042 , A61F13/0206 , A61F13/0226 , A61F13/15211 , A61F2013/00246 , A61F2013/00727 , A61F2013/00855 , A61L15/20 , A61L15/44 , A61L2300/404
摘要： An automatically self-adjusting variable permeability providing (AVPP) layer is provided over and in operative interaction with a wound site containing a wound to the integumentary system of a living creature such as the skin of a human patient. The AVPP layer has the capability of automatically changing in respective fluid permeability characteristics provided by respective subregions of the AVPP layer where the changes are in reaction to extant or changed conditions in corresponding micro-zones of the wound site. The automatic self-adjusting behaviors of the respective subregions of the AVPP layer can include providing a faster rate of vapor removal for micro-zones of the wound site that are too wet and providing a slower rate of vapor removal or essentially no vapor removal for micro-zones of the wound site that are too dry.
摘要翻译：提供自动调节可变渗透性（AVPP）层，并且与包含例如人类患者皮肤的生物体的皮肤系统的伤口部位相互作用地进行操作。 AVPP层具有自动改变由AVPP层的各个子区域提供的各个流体渗透特性的能力，其中变化与伤口部位的相应微区中的现有或改变的条件相反。 AVPP层的各个子区域的自动自调节行为可以包括为伤口部位的微区域提供更快的蒸汽去除速率，其过湿且提供较慢的蒸气去除速率或基本上不对微生物进行蒸气去除伤口部位的区域过于干燥。

8. 发明授权

US08247634B2 Expansion units for attachment to custom patterned wound dressings and custom patterned wound dressings adapted to interface with same 失效
标题翻译：扩展单元，用于附加到定制图案伤口敷料和适于与其相接的定制图案伤口敷料
公开(公告)号：US08247634B2
公开(公告)日：2012-08-21
申请号：US12196908
申请日：2008-08-22
申请人： Oleg Siniaguine
发明人： Oleg Siniaguine
IPC分类号： A61F13/00
CPC分类号： A61F13/023 , A61F13/0276 , A61F15/001 , A61F2013/00536 , A61F2013/0054 , A61F2013/00557 , A61F2013/00604 , A61F2013/8497
摘要： A custom fabricated (e.g. custom shaped and dimensioned) primary wound dressing part that matches a corresponding, pre-mapped integumentary wound is combined with dressing extension parts to form a composite wound dressing system. The primary wound dressing part may include one or more liquid flow barriers composed for example of a hydrophobic and high viscosity liquid embedded in a layer of the primary wound dressing part. The dressing extension parts may include interconnect portals for operatively interconnecting with the primary wound dressing part so that liquids may be securely moved between primary wound dressing part and the extension parts.
摘要翻译：将匹配相应的预先映射的外皮伤口的定制的（例如定制成形和尺寸确定的）初次伤口敷料部分与敷料延伸部分组合以形成复合伤口敷料系统。原发性伤口敷料部分可以包括一个或多个液体阻流构件，其构成例如嵌入初次伤口敷料部分的层中的疏水性和高粘度液体。修整延伸部分可以包括用于与主要伤口敷料部分可操作地互连的互连门，使得液体可以在主要伤口敷料部分和延伸部分之间牢固地移动。

9. 发明授权

US08237009B2 Custom patterned wound dressings having patterned fluid flow barriers and methods of manufacturing and using same 失效
标题翻译：具有图案化流体阻挡层的定制图案化伤口敷料及其制造和使用方法
公开(公告)号：US08237009B2
公开(公告)日：2012-08-07
申请号：US12164451
申请日：2008-06-30
申请人： Oleg Siniaguine
发明人： Oleg Siniaguine
IPC分类号： A61F13/00 , A61B17/06
CPC分类号： A61F13/0203 , A61F13/0283 , A61F15/001 , A61F2013/00319 , A61F2013/00731
摘要： A custom fabricated (e.g. custom shaped and dimensioned) wound dressing that matches a corresponding, pre-mapped integumentary wound includes one or more liquid flow barriers composed for example of a hydrophobic and high viscosity liquid embedded in a layer of the dressing. One such embedded hydrophobic liquid barrier covers a skin section immediately adjacent to the wound opening so as to protect the skin section from harmful liquids such as exudates or water. In one embodiment, the skin protecting barrier is substantially comprised of a silicone oil having a viscosity in the range of about 100 cSt to 1000 cSt.
摘要翻译：匹配相应的预先映射的内皮伤口的定制的（例如定制成形和尺寸确定的）伤口敷料包括一个或多个液体流动屏障，所述液体阻流构件例如由嵌入敷料层中的疏水性和高粘度液体构成。一个这样的嵌入式疏水液体屏障覆盖紧邻伤口的皮肤部分，以保护皮肤部分免受有害液体如渗出物或水的侵害。在一个实施方案中，皮肤保护屏障基本上由粘度在约100cSt至1000cSt范围内的硅油组成。

10. 发明申请

US20100241447A1 CUSTOMIZATION OF WOUND DRESSING USING RULE-BASED ALGORITHM 审中-公开
标题翻译：使用基于规则的算法来定制绕线条
公开(公告)号：US20100241447A1
公开(公告)日：2010-09-23
申请号：US12436071
申请日：2009-05-05
申请人： Oleg Siniaguine , Dmitry Krasnov , Theo Brower , Dmitriy Sinyagin
发明人： Oleg Siniaguine , Dmitry Krasnov , Theo Brower , Dmitriy Sinyagin
IPC分类号： G06Q50/00 , G06Q99/00 , G06Q10/00
CPC分类号： A61F13/00987 , A61F13/0276 , G06F19/325 , G06F19/3481 , G06Q10/06375 , G06Q50/22 , G16H50/20 , G16H50/70
摘要： A method and/or system for customizing wound dressings based on an effective wound treatment protocol created by collecting and analyzing wound treatment records. The wound treatment records are collected from one or more wound treatment facilities. The wound dressings are not customized for each patient based solely on experiences and knowledge of medical practitioners but also based on the wound treatment protocol. Further, an intuitive and systematic user interface for a wound dressing fabricator is provided to allow medical practitioners with varying levels of experiences and knowledge to customize wound dressings for a specific wound. By using the wound treatment protocol and the systematic user interface, flawed wound dressings are less likely to be fabricated. Various other functionalities are also provided to manage and support the wound dressing fabricator.
摘要翻译：基于通过收集和分析伤口治疗记录产生的有效伤口治疗方案来定制伤口敷料的方法和/或系统。创伤治疗记录从一个或多个伤口处理设备收集。伤口敷料根据医生的经验和知识，也不是根据伤口治疗方案为每个病人定制的。此外，提供用于伤口敷料制造者的直观和系统的用户界面，以允许具有不同水平的经验和知识的医疗人员定制针对特定伤口的伤口敷料。通过使用伤口治疗方案和系统的用户界面，有缺陷的伤口敷料不太可能被制造。还提供了各种其他功能来管理和支持伤口敷料制造者。

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