会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method for removing iodine compound from acetic acid
    • 从乙酸中除去碘化合物的方法
    • US5457230A
    • 1995-10-10
    • US341611
    • 1994-11-17
    • O. Bong YangYoung G. KimJae C. KimJae S. LeeHee J. Yang
    • O. Bong YangYoung G. KimJae C. KimJae S. LeeHee J. Yang
    • C07C51/47C07C53/08C07C51/42B01D15/04
    • C07C51/47Y10S210/908
    • The present invention discloses a method for removing iodine compounds from acetic acid, in which the iodine compound is removed by using a solid adsorbent in the form of an activated carbon fiber having a large strength, a large bulk density, and a large specific surface, so that the treatment of large amounts should be possible, that the acetic acid should not be contaminated during the extraction of foreign materials from the adsorbent, and that the adsorbent can be repeatedly used by regenerating it. The method includes the steps of: preparing a filter in the usual manner by using an activated carbon fiber as the adsorbent; and making acetic acid containing an iodide pass through the activated carbon fiber filter, whereby the iodide in acetic acid is removed by being adsorbed by the activated carbon fiber filter.
    • PCT No.PCT / KR94 / 00027 Sec。 371日期:1994年11月17日 102(e)日期1994年11月17日PCT 1994年3月30日PCT公布。 出版物WO94 / 22804 日期:1994年10月13日。本发明公开了一种从乙酸中除去碘化合物的方法,其中通过使用具有强大强度,体积密度大的活性炭纤维形式的固体吸附剂除去碘化合物 ,大比表面积大,所以可以大量处理,在从吸附剂中提取异物时不应该污染乙酸,并且可以通过再生来重复使用吸附剂。 该方法包括以下步骤:通过使用活性碳纤维作为吸附剂以常规方式制备过滤器; 并且使含有碘化物的乙酸通过活性碳纤维过滤器,由此通过被活性炭纤维过滤器吸附除去乙酸中的碘化物。
    • 4. 发明授权
    • High voltage and power BiCMOS driving circuit
    • 高压和电源BiCMOS驱动电路
    • US4853559A
    • 1989-08-01
    • US144933
    • 1988-01-15
    • Sung-Ki MinJae S. Lee
    • Sung-Ki MinJae S. Lee
    • H03F1/52H03F1/42H03F3/20H03F3/21H03F3/213H03K17/0812H03K17/10H03K17/567
    • H03K17/107H03K17/08126H03K17/567
    • This invention is related to an integrated driving circuit which can control high voltage and power, and more particularly to a high voltage and power driving circuit by employing BiCMOS technology. The principal object of this invention is to provide an integrated high voltage and high power driving circuit which is reliable by using BiCMOS technology without external discrete components. According to this invention, in the high voltage and power driving circuit using bipolar transistors and high voltage CMOS transistors, a high voltage and power driving circuit comprising: the current driving part composed of high voltage MOS transistor inverter and high current driving bipolar transistor 1 with the supply voltage of the certain multiple of breakdown voltage between collector and emitter of the bipolar transistor; the load driving part which drives the load with high current and high voltage of said certain multiple of the breakdown voltage which is composed of the high voltage MOS transistor inverter and the bipolar transistor 2; the reference voltage generation part which divides said certain multiple supply voltage into the breakdown voltages to prevent the bipolar transistors 1 and 2 from breaking down between the collector and the emitter; the reference voltage transfer part which transfers said reference voltage to the connection point of said bipolar transistor 1 and 2 by the switching action of the high voltage MOS transistor depending on said CMOS level signal input; and the high voltage, high power driving circuit using BiCMOS whose feature is to use delay part to prevent the operation of said load driving part till the voltage at said connection point of the bipolar transistor 1 and 2 reaches the divided voltage in the reference voltage generation part.
    • 本发明涉及一种可以通过采用BiCMOS技术来控制高压和高功率的集成驱动电路,更具体地说涉及高压和功率驱动电路。 本发明的主要目的是提供一种集成的高压和大功率驱动电路,其通过使用BiCMOS技术而不需要外部分立元件就可靠。 根据本发明,在采用双极型晶体管和高电压CMOS晶体管的高电压和电力驱动电路中,高电压和电源驱动电路包括:由高电压MOS晶体管反相器和高电流驱动双极晶体管1组成的电流驱动部分, 双极晶体管的集电极和发射极之间的一定倍数击穿电压的电源电压; 由所述高电压MOS晶体管反相器和所述双极型晶体管2构成的所述击穿电压的所述一定倍数的高电流和高电压驱动负载的负载驱动部; 所述参考电压产生部分将所述一定的多个电源电压分为击穿电压以防止双极晶体管1和2在集电极和发射极之间分解; 参考电压转移部分,根据所述CMOS电平信号输入,通过高电压MOS晶体管的开关动作将所述参考电压传送到所述双极晶体管1和2的连接点; 以及使用BiCMOS的高电压,高功率驱动电路,其特征在于使用延迟部分来防止所述负载驱动部分的操作,直到双极晶体管1和2的所述连接点的电压达到参考电压产生中的分压 部分。