专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07776752B2 Method of etching for multi-layered structure of semiconductors in group III-V and method for manufacturing vertical cavity surface emitting laser device 有权
标题翻译： III-V族半导体多层结构蚀刻方法及垂直腔面发射激光器件制造方法
公开(公告)号：US07776752B2
公开(公告)日：2010-08-17
申请号：US11635223
申请日：2006-12-07
申请人： O Kyun Kwon , Mi Ran Park , Won Seok Han , Hyun Woo Song
发明人： O Kyun Kwon , Mi Ran Park , Won Seok Han , Hyun Woo Song
IPC分类号： H01L21/302
CPC分类号： H01L21/30621 , H01S5/183 , H01S5/2081
摘要： Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 to etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained.
摘要翻译：提供了III-V族半导体的多层结构的蚀刻方法和使用该蚀刻方法制造VCSEL的方法。根据蚀刻方法，将包括第一半导体层和第二半导体层的堆叠结构暴露于由Cl 2，Ar，CH 4和H 2组成的混合物的等离子体中，以蚀刻层叠结构，使得形成VCSEL。第一半导体层由III-V族的半导体形成，第二半导体层由除了第一半导体层的半导体之外的III-V族的半导体形成。使用一次蚀刻工艺蚀刻下镜面层，下电极层，光增益层，上电极层和上镜层的至少一部分，从而获得清洁且光滑的蚀刻表面。

2. 发明申请

US20060126694A1 Hybrid metal bonded vertical cavity surface emitting laser and fabricating method thereof 审中-公开
标题翻译：混合金属结合垂直腔表面发射激光器及其制造方法
公开(公告)号：US20060126694A1
公开(公告)日：2006-06-15
申请号：US11179954
申请日：2005-07-12
申请人： O. Kyun Kwon , Mi Ran Park , Won Seok Han , Jong Hee Kim , Hyun Woo Song
发明人： O. Kyun Kwon , Mi Ran Park , Won Seok Han , Jong Hee Kim , Hyun Woo Song
IPC分类号： H01S5/00
CPC分类号： H01S5/18316 , H01S5/0215 , H01S5/0217 , H01S5/18369 , H01S5/18375 , H01S5/18377
摘要： Provided is a method of fabricating a vertical cavity surface emitting laser among semiconductor optical devices, comprising: bonding a dielectric mirror layer to an epi-structure having a mirror layer and an active layer; bonding these on a new substrate using a metal bonded method; removing the existing substrate; and fabricating a vertical cavity surface emitting laser on the new substrate. The method of fabricating the vertical cavity surface emitting laser is performed by moving and attaching a vertical cavity surface emitting laser to a new substrate using an external metallic bonding method, without electrically and optically affecting upper and lower mirrors and an active layer that constitutes the vertical cavity surface emitting laser. While using the existing method of fabricating the vertical cavity surface emitting laser, the VCSEL is fabricated by moving to a new substrate having good thermal characteristics so that good heat emission characteristics are accomplished, thus facilitating manufacture of the vertical cavity surface emitting laser having high reliability and good characteristics.
摘要翻译：提供了一种在半导体光学器件中制造垂直腔表面发射激光器的方法，包括：将介质镜层结合到具有镜层和有源层的外延结构; 使用金属键合方法将它们结合在新的基板上; 去除现有的基板; 并在新基板上制造垂直腔表面发射激光器。垂直腔表面发射激光器的制造方法是通过使用外部金属接合方法将垂直空腔表面发射激光器移动并附着到新的衬底而进行的，而不会电和影响上镜和下反射镜以及构成垂直腔的表面发射激光的有源层腔表面发射激光。在使用制造垂直腔表面发射激光器的现有方法的同时，通过移动到具有良好热特性的新衬底来制造VCSEL，从而实现良好的发热特性，从而有助于制造具有高可靠性的垂直腔表面发射激光器和良好的特点。

3. 发明申请

US20070134926A1 Method of etching for multi-layered structure of semiconductors in groups III-V and method for manufacturing vertical cavity surface emitting laser device 有权
标题翻译： III-V族半导体多层结构蚀刻方法及垂直腔表面发射激光器件制造方法
公开(公告)号：US20070134926A1
公开(公告)日：2007-06-14
申请号：US11635223
申请日：2006-12-07
申请人： O. Kyun Kwon , Mi Ran Park , Won Seok Han , Hyun Woo Song
发明人： O. Kyun Kwon , Mi Ran Park , Won Seok Han , Hyun Woo Song
IPC分类号： H01L21/302
CPC分类号： H01L21/30621 , H01S5/183 , H01S5/2081
摘要： Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 to etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained.
摘要翻译：提供了III-V族半导体的多层结构的蚀刻方法和使用该蚀刻方法制造VCSEL的方法。根据蚀刻方法，将包括第一半导体层和第二半导体层的堆叠结构暴露于由Cl 2，Ar，CH 4，和H 2 N以蚀刻堆叠结构，从而形成VCSEL的镜层。第一半导体层由III-V族的半导体形成，第二半导体层由除了第一半导体层的半导体之外的III-V族的半导体形成。使用一次蚀刻工艺蚀刻下镜面层，下电极层，光增益层，上电极层和上镜层的至少一部分，从而获得清洁且光滑的蚀刻表面。

4. 发明授权

US06989312B2 Method for fabricating semiconductor optical device 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US06989312B2
公开(公告)日：2006-01-24
申请号：US10800680
申请日：2004-03-16
申请人： Hyun Woo Song , Won Seok Han , Jong Hee Kim , Young Gu Ju , O Kyun Kwon , Sang Hee Park
发明人： Hyun Woo Song , Won Seok Han , Jong Hee Kim , Young Gu Ju , O Kyun Kwon , Sang Hee Park
IPC分类号： H01L21/20
CPC分类号： H01S5/18341 , H01S5/02461 , H01S5/18305 , H01S5/18308 , H01S5/18363
摘要： Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type of semiconductor layers is selectively etched to form an air-gap structure, and an oxide or a nitride having a good heat transfer property is deposited so that the air gap is buried, whereby it is possible to effectively implement the semiconductor reflector or the optical filter having a high reflectance in a small period because of the large index contrast between the oxide or the nitride buried in the air gap and the semiconductor layer.
摘要翻译：提供一种制造半导体光学器件的方法，该半导体光学器件可以用作反射半导体镜或光学滤波器，其中具有不同蚀刻速率的两种或更多种类型的半导体层被交替堆叠，至少一种类型的半导体层是选择性的蚀刻以形成气隙结构，并且沉积具有良好传热特性的氧化物或氮化物，从而使气隙被埋入，由此可以有效地实现具有高反射率的半导体反射器或滤光器这是由于在空气间隙和半导体层中埋入的氧化物或氮化物之间的大的折射率造成的对比度小的周期。

5. 发明授权

US07394104B2 Semiconductor optical device having current-confined structure 有权
标题翻译：具有限流结构的半导体光学器件
公开(公告)号：US07394104B2
公开(公告)日：2008-07-01
申请号：US11698418
申请日：2007-01-25
申请人： Hyun Woo Song , O Kyun Kwon , Won Seok Han , Sang Hee Park , Jong Hee Kim , Jae Heon Shin , Young Gu Ju
发明人： Hyun Woo Song , O Kyun Kwon , Won Seok Han , Sang Hee Park , Jong Hee Kim , Jae Heon Shin , Young Gu Ju
IPC分类号： H01L27/15
CPC分类号： H01L33/145 , H01S5/18308 , H01S5/18316 , H01S5/18347 , H01S5/3095 , H01S2301/176
摘要： Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.
摘要翻译：提供了具有限流结构的半导体光学器件。该器件包括：第一导电类型的第一半导体层，其形成在半导体衬底上并且包括一个或多个材料层;第二半导体层，形成在第一半导体层上并包括一个或多个材料层;第三半导体层，第二导电类型的半导体层，其形成在第二半导体层上并且包括一个或多个材料层。第一半导体层，第二半导体和第三半导体层中的一层或多层具有台面结构。构成第一半导体层，第二半导体层和第三半导体层的至少一个材料层的侧面部分被凹入，并且凹部被部分地或全部地填充有氧化物层，氮化物层或者他们。具有电流限制区域的半导体光学器件是机械可靠的，高导热性的，并且是商业上优选的，并且可以用于光通信的波长范围。

6. 发明授权

US07230276B2 Semiconductor optical device having current-confined structure 有权
公开(公告)号：US07230276B2
公开(公告)日：2007-06-12
申请号：US10699127
申请日：2003-10-30
申请人： Hyun Woo Song , O Kyun Kwon , Won Seok Han , Sang Hee Park , Jong Hee Kim , Jae Heon Shin , Young Gu Ju
发明人： Hyun Woo Song , O Kyun Kwon , Won Seok Han , Sang Hee Park , Jong Hee Kim , Jae Heon Shin , Young Gu Ju
IPC分类号： H01L27/15
CPC分类号： H01L33/145 , H01S5/18308 , H01S5/18316 , H01S5/18347 , H01S5/3095 , H01S2301/176
摘要： Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.

7. 发明授权

US06882676B2 Fiber-grating semiconductor laser with tunability 有权
标题翻译：具有可调谐性的光纤光栅半导体激光器
公开(公告)号：US06882676B2
公开(公告)日：2005-04-19
申请号：US10109764
申请日：2002-03-29
申请人： Hyun Woo Song , Je Ha Kim
发明人： Hyun Woo Song , Je Ha Kim
IPC分类号： H01S5/026 , H01S5/022 , H01S5/06 , H01S5/14 , H01S3/08 , H01S3/30
CPC分类号： H01S5/146 , H01S3/1053 , H01S5/02252 , H01S5/02284
摘要： A fiber-grating semiconductor laser with tunability is provided, which varies a output wavelength easily. The fiber-grating semiconductor laser with tunability is the hybrid integrated module on a substrate. It consists of a semiconductor laser as a gain medium and a Bragg-grating-written fiber held in a wavelength-tuning unit. (deletion) The wavelength-tuning unit can apply compression or elongation in the fiber grating for wavelength tunability.
摘要翻译：提供了具有可调性的光纤光栅半导体激光器，其容易地改变输出波长。具有可调性的光纤光栅半导体激光器是基板上的混合集成模块。它由半导体激光器作为增益介质和布置在波长调谐单元中的布拉格光栅写入光纤组成。（删除）波长调谐单元可以在光纤光栅中施加压缩或伸长波长可调谐性。

8. 发明授权

US09834879B2 Washing machine 有权
公开(公告)号：US09834879B2
公开(公告)日：2017-12-05
申请号：US13348146
申请日：2012-01-11
申请人： Weon Jin Song , Song Yik Lee , Hyun Woo Song
发明人： Weon Jin Song , Song Yik Lee , Hyun Woo Song
IPC分类号： D06F39/02 , B67D3/00
CPC分类号： D06F39/02 , B67D3/0003 , D06F39/022 , D06F39/028
摘要： A washing machine including a detergent supply device to supply a detergent together with water to a tub. The detergent supply device includes a detergent housing installed within the main body and a detergent accommodation box movably installed within the detergent housing, and the detergent accommodation box is divided into automatic detergent accommodation parts to accommodate a detergent to be supplied automatically and manual detergent accommodation parts to accommodate a detergent to be supplied manually, and the detergent supply device supplies the detergents through an automatic detergent supply method and a manual detergent supply method.

9. 发明授权

US07664357B2 Vertical-type photonic-crystal plate and optical device assembly 有权
标题翻译：垂直型光子晶体板和光学器件组件
公开(公告)号：US07664357B2
公开(公告)日：2010-02-16
申请号：US11945551
申请日：2007-11-27
申请人： Hyun Woo Song , Sang Choon Ko
发明人： Hyun Woo Song , Sang Choon Ko
IPC分类号： G02B6/26 , G02B6/30 , G02B6/122
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/4204 , G02B6/4246
摘要： Provided are a photonic-crystal plate that forms an optical waveguide and an optical device assembly using the same, and more particularly, a vertical-type photonic-crystal plate and an optical device assembly configured to be easily integrated with surface-emitting light source devices and surface-receiving light detector devices. The photonic-crystal plate includes a plurality of cylindrical through holes formed in a thickness direction and arranged in a periodic crystal lattice structure. The plate further includes: a main crystal lattice defect that forms a main optical waveguide for passing lights in a direction perpendicular to the photonic-crystal plate; and a sub-crystal lattice defect that forms a sub-optical waveguide for causing light in a specific wavelength band among the lights passing through the main optical waveguide to be optically coupled and passing the coupled light in the direction perpendicular to the photonic-crystal plate.
摘要翻译：提供一种形成光波导的光子晶体板和使用该光波导的光学器件组件，更具体地，涉及一种垂直型光子晶体板和光学器件组件，其被配置为容易地与表面发射光源器件和表面接收光检测器装置。光子晶体板包括沿厚度方向形成并以周期性晶格结构排列的多个圆柱形通孔。该板还包括：主晶格缺陷，其形成用于使光沿垂直于光子晶体板的方向通过的主光波导; 以及亚晶格缺陷，其形成用于使通过主光波导的光中的特定波长带的光光耦合并使耦合的光沿垂直于光子晶体板的方向通过的子光波导。

10. 发明授权

US08797536B2 Portable digital reader for urinalysis 有权
标题翻译：便携式数字读取器用于尿液分析
公开(公告)号：US08797536B2
公开(公告)日：2014-08-05
申请号：US13390506
申请日：2010-03-05
申请人： Dae Sik Lee , Hyun Woo Song , Byoung Goo Jeon , Moon Youn Jung , Seon Hee Park
发明人： Dae Sik Lee , Hyun Woo Song , Byoung Goo Jeon , Moon Youn Jung , Seon Hee Park
IPC分类号： G01N21/59
CPC分类号： G01N21/78 , G01N21/8483 , G01N33/493 , G01N2201/0221 , G01N2201/0627 , G01N2201/0631
摘要： The present invention relates to a portable digital reader for reading an analysis target chip including a plurality of test areas. The reader comprises: a light emitting section having light emitting elements for radiating light; an integral optical splitter for uniformly distributing the light from the light emitting section to each test area of the analysis target chip; a light receiving section for receiving light reflected from each test area so as to convert the same into electric signals; and a measuring section for measuring concentration according to the electric signals obtained from the light receiving section. Therefore, it is possible to prevent the generation of errors in signal measurement due to optical distribution failure by assembling branch sections of the optical splitter under the control of the number of the branch sections according to the number of test items in a test strip.
摘要翻译：本发明涉及用于读取包括多个测试区域的分析目标芯片的便携式数字读取器。读取器包括：发光部，其具有用于发光的发光元件; 用于将来自发光部分的光均匀分布到分析目标芯片的每个测试区域的整体光分路器; 光接收部分，用于接收从每个测试区域反射的光，以将其转换为电信号; 以及用于根据从光接收部获得的电信号来测量浓度的测量部分。因此，可以根据测试条中的测试项目的数量，在分支部分的数量的控制下组装光分路器的分支部分来防止由于光分布故障而导致的信号测量误差的产生。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式