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1. 发明授权

US11574793B2 Aberration corrector and multiple electron beam irradiation apparatus 有权
公开(公告)号：US11574793B2
公开(公告)日：2023-02-07
申请号：US16879919
申请日：2020-05-21
申请人： NuFlare Technology, Inc.
发明人： Kazuhiko Inoue , Munehiro Ogasawara
IPC分类号： H01J37/153 , H01J37/09 , H01J37/141
摘要： Aberration corrector includes a lower electrode substrate to be formed therein with plural first passage holes having a first hole diameter and making multiple electron beams pass therethrough, and to be arranged thereon plural electrode sets each being plural electrodes of four or more poles, surrounding a first passage hole, for each of the plural first passage holes, and an upper electrode substrate above the lower one, to be formed therein with plural second passage holes making multiple electron beams pass therethrough, whose size from the top of the upper electrode substrate to the middle of way to the back side of the upper electrode substrate is a second hole diameter, and whose size from the middle to the back side is a third hole diameter larger than each of the first and second hole diameters, wherein a shield electrode is on inner walls of plural second passage holes.

2. 发明授权

US09646374B2 Line width error obtaining method, line width error obtaining apparatus, and inspection system 有权
公开(公告)号：US09646374B2
公开(公告)日：2017-05-09
申请号：US15051744
申请日：2016-02-24
申请人： NuFlare Technology, Inc.
发明人： Hideaki Hashimoto , Hideki Nukada , Kazuhiko Inoue
IPC分类号： G06K9/00 , G06T7/00
CPC分类号： G06T7/001 , G06T2207/30148
摘要： Optical image data is acquired by irradiating a pattern with light emitted from a light source. A threshold value is specified by internally dividing a minimum value and a maximum value of a signal amount of reference image data by a division ratio. A position corresponding to a signal amount of a threshold value is determined as an edge of a pattern of the reference image data. A position of a signal amount equal to the threshold value is determined as an edge of the pattern of the optical image data. A line width error is obtained as a difference between a first line width of the optical image data and a second line width of the reference image data. A new threshold value is specified in the case of fluctuation of a light quantity of the light source or decrease of a contrast value of the optical image data.

3. 发明授权

US11791125B2 Aberration corrector 有权
公开(公告)号：US11791125B2
公开(公告)日：2023-10-17
申请号：US17456917
申请日：2021-11-30
申请人： NuFlare Technology, Inc.
发明人： Yuichi Maekawa , Kazuhiko Inoue
IPC分类号： H01J37/153 , H01J37/09
CPC分类号： H01J37/153 , H01J37/09 , H01J2237/0453 , H01J2237/1534
摘要： According to one aspect of the present invention, an aberration corrector includes a first electrode substrate provided with first passage holes through which multiple electron beams pass; a second electrode substrate disposed below the first electrode substrate and provided with second passage holes through which the multiple electron beams pass, first electrodes of four or more poles being disposed individually on each top surface region of top surface regions around some second passage holes among the second passage holes; and a third electrode substrate disposed below the second electrode substrate and provided with third passage holes through which the multiple electron beams pass, second electrodes of four or more poles being disposed individually on each of top surface region of top surface regions around some third passage holes corresponding to remaining second passage holes in which the first electrodes are not disposed, among the third passage holes.

4. 发明授权

US10886102B2 Multiple electron beam irradiation apparatus, multiple electron beam irradiation method, and multiple electron beam inspection apparatus 有权
公开(公告)号：US10886102B2
公开(公告)日：2021-01-05
申请号：US16502706
申请日：2019-07-03
申请人： NuFlare Technology, Inc. , NuFlare Technology America, Inc.
发明人： Kazuhiko Inoue , Munehiro Ogasawara , Steven Golladay
IPC分类号： H01J37/28 , H01J37/145 , H01J37/30 , H01J37/304 , H01J37/317
摘要： A multiple-electron-beam irradiation apparatus includes a first electrostatic lens, configured using the substrate used as a bias electrode by being applied with a negative potential, a control electrode to which a control potential is applied and a ground electrode to which a ground potential is applied, configured to provide dynamic focusing of the multiple electron beams onto the substrate, in accordance with change of the height position of the surface of the substrate, by generating an electrostatic field, wherein the control electrode is disposed on an upstream side of a maximum magnetic field of the lens magnetic field of the first electromagnetic lens with respect to a direction of a trajectory central axis of the multiple electron beams, and a ground electrode is disposed on an upstream side of the control electrode with respect to the direction of the trajectory central axis.

5. 发明授权

US11694868B2 Multi-beam image acquisition apparatus and multi-beam image acquisition method 有权
公开(公告)号：US11694868B2
公开(公告)日：2023-07-04
申请号：US17646883
申请日：2022-01-04
申请人： NuFlare Technology, Inc.
发明人： Kazuhiko Inoue , Munehiro Ogasawara , Atsushi Ando
IPC分类号： H01J37/145 , H01J37/285 , H01J37/28
CPC分类号： H01J37/145 , H01J37/285 , H01J37/28
摘要： According to one aspect of the present invention, a multi-beam image acquisition apparatus, includes: an objective lens configured to image multiple primary electron beams on a substrate by using the multiple primary electron beams; a separator configured to have two or more electrodes for forming an electric field and two or more magnetic poles for forming a magnetic field and configured to separate multiple secondary electron beams emitted due to the substrate being irradiated with the multiple primary electron beams from trajectories of the multiple primary electron beams by the electric field and the magnetic field formed; a deflector configured to deflect the multiple secondary electron beams separated; a lens arranged between the objective lens and the deflector and configured to image the multiple secondary electron beams at a deflection point of the deflector; and a detector configured to detect the deflected multiple secondary electron beams.

6. 发明授权

US11417495B2 Multi-charged particle beam irradiation apparatus and multi-charged particle beam inspection apparatus 有权
公开(公告)号：US11417495B2
公开(公告)日：2022-08-16
申请号：US17194544
申请日：2021-03-08
申请人： NuFlare Technology, Inc.
发明人： Kazuhiko Inoue , Masataka Shiratsuchi , Munehiro Ogasawara
IPC分类号： H01J37/147 , H01J37/153 , H01J37/244 , H01J37/28
摘要： A multi-charged particle beam irradiation apparatus includes a forming mechanism to form multiple charged particle beams, a multipole deflector array to individually deflect each beam of the multiple charged particle beams so that a center axis trajectory of each beam of the multiple charged particle beams may not converge in a region of the same plane orthogonal to the direction of a central axis of a trajectory of the multiple charged particle beams, and an electron optical system to irradiate a substrate with the multiple charged particle beams while maintaining a state where the multiple charged particle beams are not converged.

7. 发明授权

US11145485B2 Multiple electron beams irradiation apparatus 有权
公开(公告)号：US11145485B2
公开(公告)日：2021-10-12
申请号：US16726003
申请日：2019-12-23
申请人： NuFlare Technology, Inc. , NuFlare Technology America, Inc.
发明人： Kazuhiko Inoue , Atsushi Ando , Munehiro Ogasawara , John Hartley
IPC分类号： H01J37/15 , H01J37/12 , H01J37/153 , H01J37/317
摘要： A multiple electron beam irradiation apparatus includes a shaping aperture array substrate to form multiple primary electron beams, a plurality of electrode array substrates stacked each to dispose thereon a plurality of electrodes each arranged at a passage position of each of the multiple primary electron beams, each of the multiple primary electron beams surrounded by an electrode of the plurality of electrodes when each of the multiple primary electron beams passes through the passage position, the first wiring and the second wiring applied with one of different electric potentials, and a stage to mount thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode array substrates, wherein, in each of the plurality of electrode array substrates, each of the plurality of electrodes is electrically connected to either one of the first wiring and the second wiring.

8. 发明授权

US10192304B2 Method for measuring pattern width deviation, and pattern inspection apparatus 有权
公开(公告)号：US10192304B2
公开(公告)日：2019-01-29
申请号：US15255658
申请日：2016-09-02
申请人： NuFlare Technology, Inc.
发明人： Kazuhiko Inoue , Riki Ogawa
IPC分类号： G06T7/00
摘要： A pattern width deviation measurement method includes measuring width dimensions of a plurality of figure patterns in an optical image from data of gray-scale value profiles of the optical image, using a threshold of a gray-scale value level variably set depending on design dimension information including design width dimension of a corresponding figure pattern of a plurality of figure patterns, and at which influence of a focus position on width dimension becomes smaller, measuring width dimensions of a plurality of corresponding figure patterns in a reference image from data of gray-scale value profiles of the reference image, respectively using the threshold for the corresponding figure pattern of a plurality of figure patterns, and calculating, for each of measured width dimensions of a plurality of figure patterns in the optical image, an amount deviated from a measured width dimension of a corresponding figure pattern in the reference image.

9. 发明授权

US11915902B2 Conduction inspection method for multipole aberration corrector, and conduction inspection apparatus for multipole aberration corrector 有权
公开(公告)号：US11915902B2
公开(公告)日：2024-02-27
申请号：US17627294
申请日：2020-06-29
申请人： NuFlare Technology, Inc.
发明人： Atsushi Ando , Kazuhiko Inoue
IPC分类号： H01J37/153 , H01J37/147 , H01J37/21 , G01R31/307
CPC分类号： H01J37/153 , G01R31/307 , H01J37/147 , H01J37/21 , H01J2237/1534 , H01J2237/24592
摘要： A conduction inspection method for a multipole aberration corrector according to one aspect of the present invention includes applying, in a state where a predetermined potential has been applied to each shield electrode, an inspection charged particle beam to pass through a first opening, a second opening, and a third opening, using a multipole aberration corrector which includes an upper-stage substrate where the first opening is formed and a shield electrode is arranged around the first opening, a middle-stage substrate where the second opening is formed, a plurality of control electrodes are disposed to be opposite each other across the second opening, and a plurality of wirings are arranged to be individually connected to one of the plurality of control electrodes which are different from each other, and a lower-stage substrate where the third opening is formed and a shield electrode is arranged around the third opening, and which corrects aberration of a correction charged particle beam passing through the first opening, the second opening, and the third opening by individually variably applying a potential to each of the plurality of control electrodes; measuring, via a wiring individually connected to each control electrode of the plurality of control electrodes in the plurality of wirings, an inflow electron dose of electrons, into each control electrode of the plurality of control electrodes, which are secondarily emitted because the inspection charged particle beam has passed through the first opening, the second opening, and the third opening and has irradiated an object disposed at the downstream side of the lower-stage substrate; and determining individually, for each control electrode, whether there is conduction between a control electrode concerned and a wiring connected to the control electrode concerned, based on a result of measuring the inflow electron dose into each control electrode.

10. 发明授权

US11605523B2 Aberration corrector and multiple electron beam irradiation apparatus 有权
公开(公告)号：US11605523B2
公开(公告)日：2023-03-14
申请号：US16879919
申请日：2020-05-21
申请人： NuFlare Technology, Inc.
发明人： Kazuhiko Inoue , Munehiro Ogasawara
IPC分类号： H01J37/153 , H01J37/09 , H01J37/141
摘要： Aberration corrector includes a lower electrode substrate to be formed therein with plural first passage holes having a first hole diameter and making multiple electron beams pass therethrough, and to be arranged thereon plural electrode sets each being plural electrodes of four or more poles, surrounding a first passage hole, for each of the plural first passage holes, and an upper electrode substrate above the lower one, to be formed therein with plural second passage holes making multiple electron beams pass therethrough, whose size from the top of the upper electrode substrate to the middle of way to the back side of the upper electrode substrate is a second hole diameter, and whose size from the middle to the back side is a third hole diameter larger than each of the first and second hole diameters, wherein a shield electrode is on inner walls of plural second passage holes.

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