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1. 发明授权

US5701321A Semiconductor laser producing short wavelength light 失效
标题翻译：半导体激光产生短波长光
公开(公告)号：US5701321A
公开(公告)日：1997-12-23
申请号：US623378
申请日：1996-03-28
申请人： Norio Hayafuji , Zempei Kawazu
发明人： Norio Hayafuji , Zempei Kawazu
IPC分类号： H01S5/00 , H01L27/15 , H01S5/02 , H01S5/026 , H01S5/183 , H01S5/323 , H01S3/19 , H01S3/08
CPC分类号： H01S5/18305 , H01L27/156 , H01L33/007 , H01S5/0207 , H01S5/0213 , H01S5/18369 , H01S5/32341
摘要： A semiconductor laser includes an electrically insulating substrate having an opening; a first conductivity type first contact layer within the opening; a laminated semiconductor layer structure on the first contact layer and comprising a first cladding layer, an active layer, a second cladding layer, and a second contact layer wherein the first contact layer includes an aperture within the opening; a first electrode disposed on the electrically insulating substrate and extending to and contacting the first contact layer; and a second electrode in electrical contact with the second contact layer. The substrate is preferably sapphire, MgO, and spinel and the semiconductor layers are preferably GaN materials so that the laser emits short wavelength light. An electrode makes direct, reliable contact to the first cladding layer through an opening in the electrically insulating substrate without the need of mechanically working or etching the substrate.
摘要翻译：半导体激光器包括具有开口的电绝缘基板; 在开口内的第一导电类型的第一接触层; 在所述第一接触层上的层叠半导体层结构，包括第一覆层，有源层，第二覆层和第二接触层，其中所述第一接触层在所述开口内包括孔; 第一电极，设置在所述电绝缘基板上并延伸到所述第一接触层并接触所述第一接触层; 以及与所述第二接触层电接触的第二电极。基板优选为蓝宝石，MgO和尖晶石，半导体层优选为GaN材料，使得激光发射短波长的光。电极通过电绝缘衬底中的开口直接，可靠地接触第一包层，而不需要机械加工或蚀刻衬底。

2. 发明授权

US5764673A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5764673A
公开(公告)日：1998-06-09
申请号：US937152
申请日：1997-09-25
申请人： Zempei Kawazu , Norio Hayafuji , Diethard Marx
发明人： Zempei Kawazu , Norio Hayafuji , Diethard Marx
IPC分类号： H01L33/00 , H01L33/12 , H01L33/14 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/323 , H01S3/19 , H01L31/0256
CPC分类号： H01S5/32341 , H01L33/007 , H01S2301/173 , H01S2304/04 , H01S5/0202 , H01S5/021 , H01S5/2231
摘要： A semiconductor light emitting device includes an Si substrate having opposed front and rear surfaces; an amorphous or polycrystalline first buffer layer disposed on the front surface of the Si substrate; and GaN series compound semiconductor layers successively disposed on the first buffer layer and including a light emitting region where light is produced by recombination of electrons and holes. In this light emitting device, since the Si substrate is cleavable, it is possible to produce resonator facets by cleaving. In addition, since the Si substrate is electrically conductive, a structure in which a pair of electrodes are respectively located on opposed upper and lower surfaces of the light emitting device is realized. Further, since the Si substrate is inexpensive, the light emitting device is obtained at low cost. Furthermore, since the amorphous or polycrystalline first buffer layer is disposed on the Si substrate, in the initial state of the growth of the GaN series compound semiconductor layers, plenty of growth nuclei are created, and the growth nuclei promote two-dimensional growth. As a result, high-quality GaN series compound semiconductor layers are obtained.
摘要翻译：半导体发光器件包括具有相对的前表面和后表面的Si衬底; 设置在Si衬底的前表面上的非晶或多晶第一缓冲层; 以及连续配置在第一缓冲层上的GaN系化合物半导体层，具有通过电子和空穴的复合产生光的发光区域。在该发光器件中，由于Si衬底是可切割的，所以可以通过切割产生谐振器面。此外，由于Si衬底是导电的，所以实现了一对电极分别位于发光器件的相对的上表面和下表面上的结构。此外，由于Si基板便宜，所以以低成本获得发光器件。此外，由于非晶或多晶第一缓冲层设置在Si衬底上，在GaN系化合物半导体层的生长的初始状态下，产生大量的生长核，并且生长核促进二维生长。结果，获得了高质量的GaN系化合物半导体层。

3. 发明授权

US5760426A Heteroepitaxial semiconductor device including silicon substrate, GaAs layer and GaN layer #13 失效
标题翻译：包括硅衬底，GaAs层和GaN层的异质外延半导体器件
公开(公告)号：US5760426A
公开(公告)日：1998-06-02
申请号：US680850
申请日：1996-07-16
申请人： Diethard Marx , Zempei Kawazu , Norio Hayafuji
发明人： Diethard Marx , Zempei Kawazu , Norio Hayafuji
IPC分类号： H01L21/203 , H01L21/205 , H01L29/201 , H01L29/267 , H01L33/12 , H01L33/16 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/323 , H01L29/26
CPC分类号： H01L29/267 , H01L29/201 , H01L33/007
摘要： A semiconductor device includes an Si substrate, a stress absorbing layer of GaAs and disposed on the Si substrate, a buffer layer having a composition of Al.sub.x Ga.sub.1-x-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) and disposed on the stress absorbing layer, and a compound semiconductor layer having a composition of Al.sub.x Ga.sub.1-x-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) and disposed on the buffer layer. Therefore, the buffer layer protects the GaAs stress absorbing layer from high temperatures during the formation of the compound semiconductor layer, whereby the stress absorbing layer is prevented from decomposition. As a result, a stress due to lattice mismatch or thermal stress between the Si substrate and the compound semiconductor layer is absorbed in the GaAs stress absorbing layer having a lowest bulk modulus, whereby a compound semiconductor layer with reduced dislocations may be grown on the buffer layer and bending of the Si substrate prevented.
摘要翻译：半导体器件包括Si衬底，GaAs的应力吸收层，并且设置在Si衬底上，具有Al x Ga 1-x-y In y N（0≤x≤1,0< / = 1）并且设置在应力吸收层上，以及具有Al x Ga 1-x-y In y N（0≤x≤1,0≤y≤1）组成的化合物半导体层并且被置于缓冲层。因此，缓冲层在形成化合物半导体层期间保护GaAs应力吸收层免受高温的影响，防止应力吸收层分解。结果，在Si衬底和化合物半导体层之间由于晶格失配或热应力引起的应力被吸收在具有最低体积弹性模量的GaAs应力吸收层中，从而可以在缓冲区上生长具有减少的位错的化合物半导体层防止了Si衬底的层和弯曲。

4. 发明授权

US09824911B2 Substrate support and semiconductor manufacturing apparatus 有权
公开(公告)号：US09824911B2
公开(公告)日：2017-11-21
申请号：US13785134
申请日：2013-03-05
申请人： Akihito Ohno , Zempei Kawazu
发明人： Akihito Ohno , Zempei Kawazu
IPC分类号： H01L21/683 , H01L21/687
CPC分类号： H01L21/6835 , H01L21/68757
摘要： A substrate support for supporting a substrate when forming a film on a surface of the substrate by chemical vapor deposition. The substrate support includes a graphite material having a recessed portion for accommodating the substrate, a multilayer film on the recessed portion and consisting of a first degassing prevention film of SiC and a sublimation prevention film of TaC or HfC stacked together, and a second degassing prevention film of SiC located on portions of the graphite material other than the recessed portion.

5. 发明授权

US5739552A Semiconductor light emitting diode producing visible light 失效
标题翻译：半导体发光二极管产生可见光
公开(公告)号：US5739552A
公开(公告)日：1998-04-14
申请号：US547315
申请日：1995-10-24
申请人： Tatsuya Kimura , Zempei Kawazu
发明人： Tatsuya Kimura , Zempei Kawazu
IPC分类号： H01L25/075 , H01L27/15 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/00
CPC分类号： H01L33/20 , H01L25/0756 , H01L27/15 , H01L2924/0002 , H01L33/08 , H01L33/24
摘要： A method of fabricating a light emitting diode (LED) device producing visible light includes growing layers of an LED emitting blue light to form a blue LED; growing layers of an LED emitting green light to form a green LED; growing layers of an LED emitting red light to form a red LED; and uniting the three LEDs directly to each other by annealing. Therefore, an LED device that can emit light of all three colors from the same region of the LED device with variable light intensity is obtained.
摘要翻译：制造产生可见光的发光二极管（LED）器件的方法包括发射蓝光的LED的生长层以形成蓝色LED; 发展绿色LED的LED的生长层以形成绿色LED; 生长层的LED发出红光以形成红色LED; 并通过退火将三个LED直接连接在一起。因此，可以获得能够从具有可变光强度的LED装置的相同区域发射全部三种颜色的LED的LED装置。

6. 发明申请

US20130327274A1 SUBSTRATE SUPPORT AND SEMICONDUCTOR MANUFACTURING APPARATUS 有权
标题翻译：基板支撑和半导体制造设备
公开(公告)号：US20130327274A1
公开(公告)日：2013-12-12
申请号：US13785134
申请日：2013-03-05
申请人： Akihito Ohno , Zempei Kawazu
发明人： Akihito Ohno , Zempei Kawazu
IPC分类号： H01L21/683
CPC分类号： H01L21/6835 , H01L21/68757
摘要： A substrate support for supporting a substrate when forming a film on a surface of the substrate by chemical vapor deposition. The substrate support includes a graphite material having a recessed portion for accommodating the substrate, a multilayer film on the recessed portion and consisting of a first degassing prevention film of SiC and a sublimation prevention film of TaC or HfC stacked together, and a second degassing prevention film of SiC located on portions of the graphite material other than the recessed portion.
摘要翻译：一种用于在通过化学气相沉积在衬底的表面上形成膜时支撑衬底的衬底支撑件。基板支撑体包括具有用于容纳基板的凹部的石墨材料，在凹部上的多层膜，由SiC的第一脱气膜和层叠在一起的TaC或HfC的升华保护膜构成，第二脱气防止位于除了凹部以外的石墨材料的部分上的SiC膜。

7. 发明申请

US20100003778A1 METHOD OF MANUFACTURING SEMICONDUCTOR LASER 审中-公开
标题翻译：制造半导体激光的方法
公开(公告)号：US20100003778A1
公开(公告)日：2010-01-07
申请号：US12274435
申请日：2008-11-20
申请人： Hitoshi Tada , Tsutomu Yamaguchi , Zempei Kawazu , Yuji Okura
发明人： Hitoshi Tada , Tsutomu Yamaguchi , Zempei Kawazu , Yuji Okura
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , H01S5/2081 , H01S5/209 , H01S5/2214 , H01S5/2224
摘要： A method of manufacturing a semiconductor laser includes sequentially forming a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on top of one another on a semiconductor substrate; forming a ridge in the second conductivity type semiconductor layer; forming a first insulating film on the second conductivity type semiconductor layer at a first temperature; forming a second insulating film on the first insulating film at a second temperature, lower than the first temperature; and forming an electrode on the second insulating film.
摘要翻译：半导体激光器的制造方法包括在半导体基板上依次形成第一导电型半导体层，有源层和第二导电型半导体层，在第二导电类型半导体层中形成脊; 在第一温度下在第二导电类型半导体层上形成第一绝缘膜; 在低于第一温度的第二温度下在第一绝缘膜上形成第二绝缘膜; 以及在所述第二绝缘膜上形成电极。

8. 发明授权

US5880485A Semiconductor device including Gallium nitride layer 失效
标题翻译：包括氮化镓层的半导体器件
公开(公告)号：US5880485A
公开(公告)日：1999-03-09
申请号：US927692
申请日：1997-09-11
申请人： Diethard Marx , Zempei Kawazu , Yutaka Mihashi
发明人： Diethard Marx , Zempei Kawazu , Yutaka Mihashi
IPC分类号： H01L33/00 , H01S5/02 , H01S5/183 , H01S5/22 , H01S5/323
CPC分类号： H01S5/18308 , H01L33/007 , H01L33/0075 , H01S5/22 , H01S5/32341 , H01S2301/173 , H01S2304/12 , H01S5/0213 , H01S5/3202
摘要： A high-quality gallium nitride layer is grown on a surface of a substrate which is exposed through a dielectric mask on the substrate. The high-quality gallium nitride layer has a composition expressed by the chemical formula:Ga.sub.x Al.sub.y In.sub.z N (I)wherein 0
摘要翻译：在衬底的表面上生长高质量的氮化镓层，该衬底的表面通过衬底上的电介质掩模露出。高质量的氮化镓层具有以下化学式表示的组成：其中0

9. 发明授权

US5539239A Semiconductor light emitting element with II-VI and III-V compounds 失效
标题翻译：具有II-VI和III-V化合物的半导体发光元件
公开(公告)号：US5539239A
公开(公告)日：1996-07-23
申请号：US390586
申请日：1995-02-17
申请人： Zempei Kawazu , Tatsuya Kimura
发明人： Zempei Kawazu , Tatsuya Kimura
IPC分类号： G11B7/125 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/327 , H01L33/00
CPC分类号： H01L33/26 , H01L33/0087 , H01S5/327
摘要： A semiconductor light emitting element includes a wide band gap energy II-VI semiconductor layer on a p type III-V semiconductor substrate and a III-V semiconductor buffer layer between the semiconductor substrate and the wide band gap energy II-VI semiconductor layer having a band gap energy intermediate those of the semiconductor substrate and the wide band gap energy II-VI semiconductor layer. Energy spikes in the valence band of the element are reduced and the injection efficiency of holes is increased so that a semiconductor light emitting element having a low operation voltage is produced.
摘要翻译：半导体发光元件包括在III型-V半导体衬底上的宽带隙能量II-VI半导体层和在半导体衬底和具有带状的宽带隙能量II-VI半导体层之间的III-V半导体缓冲层间隙能量与半导体衬底和宽带隙能量II-VI半导体层的间隙能量相反。元件的价带中的能量尖峰降低，并且空穴的注入效率增加，从而产生具有低工作电压的半导体发光元件。

10. 发明授权

US07378351B2 Method of manufacturing nitride semiconductor device 有权
标题翻译：氮化物半导体器件的制造方法
公开(公告)号：US07378351B2
公开(公告)日：2008-05-27
申请号：US11143685
申请日：2005-06-03
申请人： Katsuomi Shiozawa , Toshiyuki Oishi , Kazushige Kawasaki , Zempei Kawazu , Yuji Abe
发明人： Katsuomi Shiozawa , Toshiyuki Oishi , Kazushige Kawasaki , Zempei Kawazu , Yuji Abe
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/28575 , H01L21/30621 , H01L33/0075 , H01S5/32341
摘要： A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.
摘要翻译：氮化物半导体器件通过在GaN衬底主表面上形成氮化物半导体层形成步骤，抛光由上述氮化物半导体层形成的GaN衬底的背面的步骤，干法蚀刻通过使用氯和氧的气体混合物进行上述抛光的GaN衬底的背面，以及在经受上述干蚀刻的GaN衬底的背面上形成n型电极的步骤。

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