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1. 发明授权

US4609903A Thin film resistor for an integrated circuit semiconductor device 失效
标题翻译：用于集成电路半导体器件的薄膜电阻
公开(公告)号：US4609903A
公开(公告)日：1986-09-02
申请号：US662480
申请日：1984-10-19
申请人： Nobuo Toyokura , Toyokazu Ohnishi , Naoki Yokoyama
发明人： Nobuo Toyokura , Toyokazu Ohnishi , Naoki Yokoyama
IPC分类号： H01C7/00 , H01C17/12 , H01L21/02 , H01L21/822 , H01L21/8244 , H01L27/01 , H01L27/04 , H01L27/06 , H01L27/10 , H01L27/11 , H01C7/10 , H01C7/13
CPC分类号： H01L28/24 , H01C17/12 , H01C7/006 , H01L27/0605 , H01L27/1112
摘要： A thin film resistor for use in microelectronic devices, the resistor having a resistive layer comprising silicon nitride (Si.sub.3 N.sub.4) and refractory metals of tungsten and/or molybdenum. The features of the structure of the resistor is that the film comprises a silicon nitride layer and grains of metal and/or metal silicide, wherein the resistivity is determined mainly by the silicon nitride. Therefore, the total resistance of the resistor can be controlled by controlling the amount of the silicon nitride, thus providing a wide range of the resistivity of 10.sup.-3 to 10.sup.9 .OMEGA.cm. Other characteristics such as immunity to the dopant contained in an adjacent doped layer, namely heat resistivity and low activation energy of the resistivity are verified by associated experiments.
摘要翻译：一种用于微电子器件的薄膜电阻器，该电阻器具有包含氮化硅（Si 3 N 4）和钨和/或钼难熔金属的电阻层。电阻器的结构的特征在于，膜包括氮化硅层和金属和/或金属硅化物的晶粒，其中电阻率主要由氮化硅决定。因此，可以通过控制氮化硅的量来控制电阻器的总电阻，从而提供10-3至10欧姆·厘米的电阻率的宽范围。通过相关联的实验验证了其他特征，例如包含在相邻掺杂层中的掺杂剂的抗扰性，即电阻率的热阻和低活化能。

2. 发明授权

US5640029A Field-effect transistor and method of producing same 失效
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US5640029A
公开(公告)日：1997-06-17
申请号：US551285
申请日：1995-10-31
申请人： Toyokazu Ohnishi
发明人： Toyokazu Ohnishi
IPC分类号： H01L29/872 , H01L21/265 , H01L21/28 , H01L21/285 , H01L21/338 , H01L29/08 , H01L29/423 , H01L29/47 , H01L29/812 , H01L29/80 , H01L21/26
CPC分类号： H01L29/66878 , H01L21/2815 , H01L21/28587 , H01L29/0891 , H01L29/42316
摘要： A field-effect transistor has its gate length made to be minute, and a short channel effect is prevented. The field-effect transistor which attains the above objects has first and second semiconductor regions having different impurity concentrations disposed so as to be adjacent to each other. A source electrode is disposed on the second semiconductor region with a high impurity concentration, a drain electrode on the first semiconductor region with a low impurity concentration, and a gate electrode on the first semiconductor region side of the second semiconductor region. To produce the above field-effect transistor, a production method comprises a step of forming a first semiconductor region on the major surface of a semiconductor substrate, a step of forming a gate electrode to divide the first semiconductor region, and a step of doping impurities in the first semiconductor region on one side of the gate electrode with the gate electrode as the mask, to form a second semiconductor region which is of the same conductive type with the first semiconductor region and has a different impurity concentration from the first semiconductor region.
摘要翻译：场效应晶体管的栅极长度使其微小，并且防止短沟道效应。实现上述目的的场效应晶体管具有彼此相邻配置的具有不同杂质浓度的第一和第二半导体区域。源电极设置在具有高杂质浓度的第二半导体区域上，具有低杂质浓度的第一半导体区上的漏电极和在第二半导体区域的第一半导体区域侧上的栅电极。为了制造上述场效应晶体管，制造方法包括在半导体基板的主表面上形成第一半导体区域的步骤，形成用于分割第一半导体区域的栅电极的工序，以及掺杂杂质的工序在栅电极的一侧的第一半导体区域中，以栅电极为掩模，与第一半导体区域形成与第一半导体区域具有相同导电类型且与第一半导体区域具有不同杂质浓度的第二半导体区域。

3. 发明授权

US5994725A MOSFET having Schottky gate and bipolar device 失效
标题翻译：具有肖特基栅极和双极器件的MOSFET
公开(公告)号：US5994725A
公开(公告)日：1999-11-30
申请号：US003438
申请日：1998-01-06
申请人： Toyokazu Ohnishi , Akinori Seki
发明人： Toyokazu Ohnishi , Akinori Seki
IPC分类号： H01J9/02 , H01L21/338 , H01L29/423 , H01L29/812 , H01L29/73
CPC分类号： H01L29/66856 , H01J9/025 , H01L29/42316 , H01L29/66863 , H01L29/8124 , H01L29/8128
摘要： A semiconductor device having a Schottky gate and a bipolar device. A semiconductor substrate has a surface layer in ohmic contact with the conductor and the deeper layer in Schottky contact with the conductor. The substrate has a recess which reaches into the deeper layer. A conductor field extends from the bottom of the recess in a direction perpendicular to the bottom. Insulating films are formed on both vertical surfaces of the conductor film. Another conductor film is formed across the top of the first conductor film and both insulating films. Conductor films are formed on the surface of the substrate on either side of the insulating films. In this device, the electrode length/width is reduced and the response to the element is improved. Further, because the second conductor film is formed on the first conductor film, it is possible to reduce the gate electrode and the base electrode.
摘要翻译：具有肖特基栅极和双极器件的半导体器件。半导体衬底具有与导体欧姆接触的表面层和与导体肖特基接触的较深层。衬底具有进入更深层的凹陷。导体场从垂直于底部的方向从凹部的底部延伸。绝缘膜形成在导体膜的两个垂直表面上。在第一导体膜的顶部和两个绝缘膜上形成另一个导体膜。在绝缘膜两侧的基板表面上形成导体膜。在该器件中，电极长度/宽度减小，并且对元件的响应得到改善。此外，由于第二导体膜形成在第一导体膜上，所以可以减小栅电极和基极。

4. 发明授权

US5553089A Semiconductor laser stack with lens and method of manufacturing the same 失效
标题翻译：具有透镜的半导体激光堆及其制造方法
公开(公告)号：US5553089A
公开(公告)日：1996-09-03
申请号：US324706
申请日：1994-10-18
申请人： Akinori Seki , Toyokazu Ohnishi , Jiro Nakano
发明人： Akinori Seki , Toyokazu Ohnishi , Jiro Nakano
IPC分类号： H01S5/00 , H01S3/00 , H01S5/026 , H01S5/042 , H01S5/40 , H01S3/18
CPC分类号： H01S5/4025 , H01S3/005 , H01S5/005 , H01S5/026 , H01S5/4043
摘要： A semiconductor laser includes a semiconductor laser chip stack having active layers formed substantially in the central portion thereof in the stacking direction and a pair of opposed reflecting surfaces formed at both ends of the active layers. A convex lens of a light transmissible material fixedly attached to a partially light transmissible reflecting surface of the pair of reflecting surfaces and adapted for converging a laser beam emitted from the partially light transmissible reflecting surface.
摘要翻译：一种半导体激光器包括：半导体激光器芯片堆叠，其具有在层叠方向上大体上位于其中心部分的有源层，以及一对相对的反射面，形成在有源层的两端。光透射材料的凸透镜，固定地附接到所述一对反射表面的部分透光的反射表面，并且适于会聚从所述部分透光的反射表面发射的激光束。

5. 发明申请

US20100289076A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20100289076A1
公开(公告)日：2010-11-18
申请号：US12808473
申请日：2008-11-11
申请人： Shuichi Nishida , Toyokazu Ohnishi , Tomoyuki Shoji
发明人： Shuichi Nishida , Toyokazu Ohnishi , Tomoyuki Shoji
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0649 , H01L29/0653 , H01L29/0696 , H01L29/0834 , H01L29/407 , H01L29/7397
摘要： A technique is presented for further reducing on-resistance (or on-voltage) in a vertical semiconductor device provided with a carrier shielding layer.A semiconductor substrate 20 of a semiconductor device 10 comprises a channel section 10A and a non-channel section 10B. An emitter region 26 is formed in the channel section 10A, this emitter region 26 making contact with a side surface of a trench gate 30 and being electrically connected to an emitter electrode 28. The emitter region 26 is not formed in a body region 25 of the non-channel section 10B. In a plan view, an occupied area ratio of the area which a carrier shielding layer 52 located in the non-channel section 10B occupies within the non-channel section 10B is larger than an occupied area ratio of the area which the carrier shielding layer 52 located in the channel section 10A occupies within the channel section 10A.
摘要翻译：提出了一种技术，用于在具有载体屏蔽层的垂直半导体器件中进一步降低导通电阻（或导通电压）。半导体器件10的半导体衬底20包括沟道部分10A和非沟道部分10B。发射极区域26形成在沟道部分10A中，该发射极区域26与沟槽栅极30的侧表面接触并且电连接到发射极电极28.发射极区域26不形成在非通道部分10B。在平面图中，位于非通道部10B中的载流子屏蔽层52所占据的区域的占用面积比大于非沟道部分10B中的载流子屏蔽层52所占的面积比位于通道部分10A中的通道部分10A占据通道部分10A。

6. 发明授权

US5773334A Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5773334A
公开(公告)日：1998-06-30
申请号：US531606
申请日：1995-09-21
申请人： Toyokazu Ohnishi , Akinori Seki
发明人： Toyokazu Ohnishi , Akinori Seki
IPC分类号： H01J9/02 , H01L21/338 , H01L29/423 , H01L29/812 , H01L21/283 , H01L21/331
CPC分类号： H01L29/66856 , H01J9/025 , H01L29/42316 , H01L29/66863 , H01L29/8124 , H01L29/8128
摘要： A semiconductor device is manufactured by a process comprising the steps of forming a cover film on a surface of a semiconductor substrate such that the cover film exposes a portion of the surface, covers a remaining portion thereof and has an edge along a boundary between the exposed portion and the covered portion, forming a first conductor film in a range from the cover film formed in the cover film forming step through the edge to the exposed surface portion of the semiconductor substrate, removing the first conductor film formed in the first conductor film forming step other than a portion formed along the edge such that the first conductor film is left along the edge, forming an insulating film on the opposite sides of the first conductor film left along the edge in the removing step such that a top edge of the left first conductor film is exposed, and forming a second conductor film on the surface of the insulating film formed in the insulating film forming step along the exposed top edge of the first conductor film. In this method, the gate electrode or the base electrode is formed by a side wall process. It is thus possible to reduce the electrode length/width and improve the response of the element.
摘要翻译：半导体器件通过以下工艺制造，该方法包括以下步骤：在半导体衬底的表面上形成覆盖膜，使得覆盖膜暴露表面的一部分，覆盖其剩余部分，并且沿着暴露的在覆盖膜形成步骤中形成的覆盖膜通过边缘到半导体衬底的暴露表面部分的范围内形成第一导体膜，去除形成在第一导体膜形成中的第一导体膜除了沿着边缘形成的部分之外，使得第一导体膜沿着边缘留下，在除去步骤中沿着边缘留下的第一导体膜的相对侧上形成绝缘膜，使得左边的顶部边缘暴露第一导体膜，并且在沿着曝光的绝缘膜形成步骤中形成的绝缘膜的表面上形成第二导体膜 d第一导体膜的顶部边缘。在该方法中，通过侧壁工艺形成栅电极或基极。因此可以减小电极的长度/宽度并改善元件的响应。

7. 发明授权

US5604761A Layered semiconductor laser having solder laminations and method of making same 失效
标题翻译：具有焊料层叠的分层半导体激光器及其制造方法
公开(公告)号：US5604761A
公开(公告)日：1997-02-18
申请号：US323431
申请日：1994-10-14
申请人： Akinori Seki , Toyokazu Ohnishi , Jiro Nakano , Takahide Sugiyama , Kazuyoshi Tomita , Hiroyuki Kano
发明人： Akinori Seki , Toyokazu Ohnishi , Jiro Nakano , Takahide Sugiyama , Kazuyoshi Tomita , Hiroyuki Kano
IPC分类号： H01S3/23 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/40 , H01S3/18
CPC分类号： H01S5/4031 , H01S5/0202 , H01S5/0207 , H01S5/02272 , H01S5/4018 , H01S5/4043
摘要： A semiconductor laser having a plurality of semiconductor laser chips laminated by solder layers which cause no interference with laser beams is provided. To this end, each of the semiconductor laser chips has a solder sump recess formed in the surface to be soldered at an end adjacent to a laser beam radiating surface and extending through portions of the chip except an active layer. This semiconductor laser is manufactured by a method comprising the steps of forming grooves in a surface of an epitaxial substrate along boundaries of semiconductor laser chip areas for defining laser beam radiating surfaces, each of the grooves extending through portions constituting the substrate except an active layer and having a bottom substantially parallel to the epitaxial substrate surface; cleaving the epitaxial substrate along the grooves to provide the semiconductor laser chips with laser beam radiating surfaces defined by the cleaved surfaces; and laminating the plurality of semiconductor laser chips one above another by soldering.
摘要翻译：提供了具有通过不影响激光束的焊料层层叠的多个半导体激光器芯片的半导体激光器。为此，每个半导体激光器芯片具有形成在与激光束辐射表面相邻的端部处待焊接的表面中的焊料池凹部，并且延伸穿过除有源层之外的芯片的部分。该半导体激光器是通过以下步骤制造的，该方法包括以下步骤：沿着半导体激光器芯片区域的边界沿着半导体激光器芯片区域的边界形成用于限定激光束辐射表面的凹槽，每个凹槽延伸除了有源层以外的构成基板的部分，具有基本上平行于外延衬底表面的底部; 沿着沟槽切割外延衬底，以向半导体激光器芯片提供由切割表面限定的激光束辐射表面; 并通过焊接将多个半导体激光芯片层压在另一个之上。

8. 发明授权

US5452316A Semiconductor laser having stacked active layers with reduced drive voltage 失效
标题翻译：半导体激光器具有堆叠的具有降低的驱动电压的有源层
公开(公告)号：US5452316A
公开(公告)日：1995-09-19
申请号：US309502
申请日：1994-09-23
申请人： Akinori Seki , Toyokazu Ohnishi , Jiro Nakano
发明人： Akinori Seki , Toyokazu Ohnishi , Jiro Nakano
IPC分类号： H01S5/00 , H01S5/22 , H01S5/323 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4043 , H01S5/32316
摘要： A semiconductor laser includes a first one-conductive type clad layer, a first active layer, a second other-conductive type clad layer, a third one-conductive type clad layer, a second active layer, and a fourth other-conductive type clad layer stacked in sequence. Either the second other-conductive type clad layer or the third one-conductive type clad layer has a thickness smaller than the thickness of a depletion layer of the p-n junction grown at the boundary between the second other-conductive type clad layer and the third one-conductive type clad layer when voltage is applied across the first one-conductive type clad layer and the fourth other-conductive type clad layer.
摘要翻译：半导体激光器包括第一导电型覆盖层，第一有源层，第二导电型覆盖层，第三导电型覆盖层，第二有源层和第四导电型覆盖层按顺序堆叠。第二另一导电型覆盖层或第三单导电型覆盖层的厚度小于在第二导电型覆盖层和第三导电型覆盖层之间的边界处生长的pn结的耗尽层的厚度在第一导电型覆盖层和第四导电型覆盖层上施加电压时的导电型覆盖层。

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