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1. 发明授权

US4270136A MIS Device having a metal and insulating layer containing at least one cation-trapping element 失效
标题翻译： MIS装置具有含有至少一个阳离子捕获元件的金属和绝缘层
公开(公告)号：US4270136A
公开(公告)日：1981-05-26
申请号：US23460
申请日：1979-03-23
申请人： Nobuo Toyokura , Hiroshi Tokunaga , Shinichi Inoue , Hajime Ishikawa , Masaichi Shinoda
发明人： Nobuo Toyokura , Hiroshi Tokunaga , Shinichi Inoue , Hajime Ishikawa , Masaichi Shinoda
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/321 , H01L29/45 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/94 , H01L23/48 , H01L29/34
CPC分类号： H01L29/78 , H01L21/28167 , H01L21/32051 , H01L21/321 , H01L29/456 , H01L29/495 , H01L29/4966 , H01L29/51 , H01L29/94 , H01L21/28211 , H01L2924/0002
摘要： A metal layer of a metal-insulator-semiconductor type semiconductor device, e.g., a metal electrode on an oxide layer covering a semiconductor substrate of an MOS diode or an MOS FET, contains at least one cation-trapping element. The semiconductor substrate with the metal layer and the oxide layer is heated at an elevated temperature to diffuse some of the ions responsible for the cation-trapping element out of the metal layer and into the upper part of the oxide layer. The metal and oxide layers promote the surface passivation of the semiconductor device.
摘要翻译：金属 - 绝缘体 - 半导体型半导体器件的金属层，例如覆盖MOS二极管或MOS FET的半导体衬底的氧化物层上的金属电极包含至少一个阳离子捕获元件。具有金属层和氧化物层的半导体衬底在升高的温度下被加热，以将负责阳离子捕获元件的一些离子从金属层中扩散到氧化物层的上部。金属和氧化物层促进半导体器件的表面钝化。

2. 发明授权

US4349395A Method for producing MOS semiconductor device 失效
标题翻译：用于制造MOS半导体器件的方法
公开(公告)号：US4349395A
公开(公告)日：1982-09-14
申请号：US217689
申请日：1980-12-18
申请人： Nobuo Toyokura , Hiroshi Tokunaga , Shinichi Inoue , Hajime Ishikawa , Masaichi Shinoda
发明人： Nobuo Toyokura , Hiroshi Tokunaga , Shinichi Inoue , Hajime Ishikawa , Masaichi Shinoda
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/321 , H01L29/45 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/94 , H01L21/225 , H01L21/26
CPC分类号： H01L29/78 , H01L21/28167 , H01L21/32051 , H01L21/321 , H01L29/456 , H01L29/495 , H01L29/4966 , H01L29/51 , H01L29/94 , H01L21/28211 , H01L2924/0002
摘要： A metal layer of a metal-insulator-semiconductor type semiconductor device, e.g., a metal electrode on an oxide layer covering a semiconductor substrate of an MOS diode or an MOS FET, contains at least one cation-trapping element. The semiconductor substrate with the metal layer and the oxide layer is heated at an elevated temperature to diffuse some of the ions responsible for the cation-trapping element out of the metal layer and into the upper part of the oxide layer. The metal and oxide layers promote the surface passivation of the semiconductor device.
摘要翻译：金属 - 绝缘体 - 半导体型半导体器件的金属层，例如覆盖MOS二极管或MOS FET的半导体衬底的氧化物层上的金属电极包含至少一个阳离子捕获元件。具有金属层和氧化物层的半导体衬底在升高的温度下被加热，以将负责阳离子捕获元件的一些离子从金属层中扩散到氧化物层的上部。金属和氧化物层促进半导体器件的表面钝化。

3. 发明授权

US4343657A Process for producing a semiconductor device 失效
标题翻译：半导体装置的制造方法
公开(公告)号：US4343657A
公开(公告)日：1982-08-10
申请号：US174134
申请日：1980-07-31
申请人： Takashi Ito , Hajime Ishikawa , Masaichi Shinoda
发明人： Takashi Ito , Hajime Ishikawa , Masaichi Shinoda
IPC分类号： H01L21/283 , H01L21/318 , H01L21/32 , H01L21/336 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/78 , H01L21/22
CPC分类号： H01L27/1085 , H01L21/3185 , H01L21/32 , H01L27/10805 , H01L29/66575 , H01L29/78
摘要： In the production of a semiconductor device including an MISFET or a one transistor-one capacitor-memory cell, the excellent oxidation resistance of a silicon nitride film formed by direct nitridation, as well as the great oxidation tendency of a covering layer made of, for example, polycrystalline silicon selectively formed on the silicon nitride film, are utilized so as to form various regions of the semiconductor device in self alignment and to prevent a short circuit between such regions.A process according to the present invention comprises the steps of: selectively covering a semiconductor substrate with a relatively thick field insulation film; forming, on the exposed part of the semiconductor substrate, a relatively thin nitride film by direct nitridation; and selectively forming a film of silicon or a metal silicide on the silicon nitride film. A capacitor made of the silicon nitride is formed between the silicon or silicide film and the semiconductor substrate. The capacitor may be one for storing information.
摘要翻译：在制造包括MISFET或一个晶体管一个电容器存储单元的半导体器件中，通过直接氮化形成的氮化硅膜的优异的抗氧化性，以及由例如，选择性地形成在氮化硅膜上的多晶硅被利用，以便自对准地形成半导体器件的各个区域并防止这些区域之间的短路。根据本发明的方法包括以下步骤：用相对较厚的场绝缘膜选择性地覆盖半导体衬底; 通过直接氮化在半导体衬底的暴露部分上形成相对较薄的氮化物膜; 并且在氮化硅膜上选择性地形成硅或金属硅化物的膜。在硅或硅化物膜和半导体衬底之间形成由氮化硅制成的电容器。电容器可以是用于存储信息的电容器。

4. 发明授权

US4298629A Method for forming a nitride insulating film on a silicon semiconductor substrate surface by direct nitridation 失效
标题翻译：通过直接氮化在硅半导体衬底表面上形成氮化物绝缘膜的方法
公开(公告)号：US4298629A
公开(公告)日：1981-11-03
申请号：US128172
申请日：1980-03-07
申请人： Takao Nozaki , Takashi Ito , Hideki Arakawa , Hajime Ishikawa , Masaichi Shinoda
发明人： Takao Nozaki , Takashi Ito , Hideki Arakawa , Hajime Ishikawa , Masaichi Shinoda
IPC分类号： H01L29/78 , C01B21/068 , H01L21/318 , C23C11/00
CPC分类号： H01L21/3185 , H01L21/318
摘要： In a method for forming an insulating film on a semiconductor substrate surface, the silicon nitride of the insulating film has been formed by a plasma CVD or a direct nitridation. In the present invention, a gas plasma of a nitrogen-containing gas is generated in a direct nitridation reaction chamber, and the semiconductor silicon body is heated to a temperature of from approximately 800 to approximately 1300.degree. C. within the gas plasma atmosphere, thereby forming the silicon nitride film. The resulting silicon nitride film has a dense structure and a low oxygen concentration and a thick silicon nitride film is formed in a short period by direct nitridation of silicon.
摘要翻译：在半导体衬底表面上形成绝缘膜的方法中，绝缘膜的氮化硅通过等离子体CVD或直接氮化形成。在本发明中，在直接氮化反应室中产生含氮气体的气体等离子体，在气体等离子体气氛中将半导体硅体加热至约800〜约1300℃的温度，由此形成氮化硅膜。所得到的氮化硅膜具有致密结构和低氧浓度，并且通过硅的直接氮化在短时间内形成厚的氮化硅膜。

5. 发明授权

US08717941B2 Communication method, mobile agent device, and home agent device 有权
标题翻译：通信方式，移动代理设备和归属代理设备
公开(公告)号：US08717941B2
公开(公告)日：2014-05-06
申请号：US12093962
申请日：2006-11-16
申请人： Hiroaki Hata , Nobuaki Futana , Hajime Ishikawa
发明人： Hiroaki Hata , Nobuaki Futana , Hajime Ishikawa
IPC分类号： H04W4/00
CPC分类号： H04W60/00 , H04L61/103 , H04L61/6013 , H04W8/04 , H04W8/06 , H04W80/04 , H04W88/182
摘要： In a communication system including a MN, a MFA connected to the MN, and a HA connected to a home network of the MN, the HA holds a layer 3 address of the HA and a source layer 3 address of a registration request by associating them with each other. The MFA transmits a layer 2 frame from the MN to the HA by encapsulating it. The HA decapsulates the frame to transmit it to the home network. When the HA receives a layer 2 frame from the home network, the HA checks that the destination layer 3 address is registered, and encapsulates the layer 2 frame to transmit it to a source layer 3 address of the registration request that is registered being associated with the destination layer 3 address. The MFA decapsulate the encapsulated layer 2 frame to transmit the layer 2 frame to the MN.
摘要翻译：在包括MN，连接到MN的MFA和连接到MN的归属网络的HA的通信系统中，HA通过将它们关联来保存HA的第3层地址和注册请求的源层3地址与彼此。 MFA通过封装从MN向HA发送第2层帧。 HA解封装帧以将其发送到家庭网络。当HA从家庭网络接收到第2层帧时，HA检查目的地层3的地址是否被注册，并且封装第2层帧以将其发送到注册的与相关联的注册请求的源层3地址目的地层3地址。 MFA解封装封装层2帧以将第2层帧发送到MN。

6. 发明授权

US08375334B2 Portable information terminal, display control device, display control method, and computer readable program therefor 有权
标题翻译：便携式信息终端，显示控制装置，显示控制方法及其计算机可读程序
公开(公告)号：US08375334B2
公开(公告)日：2013-02-12
申请号：US10435709
申请日：2003-05-09
申请人： Masao Nakano , Masao Nakazawa , Yoshio Sasaki , Eiji Takeuchi , Yosuke Miho , Hajime Ishikawa , Takeo Kobayashi , Tomoki Myoi , Hiroshi Kasakawa , Akiko Watanabe , Shinsuke Sato
发明人： Masao Nakano , Masao Nakazawa , Yoshio Sasaki , Eiji Takeuchi , Yosuke Miho , Hajime Ishikawa , Takeo Kobayashi , Tomoki Myoi , Hiroshi Kasakawa , Akiko Watanabe , Shinsuke Sato
IPC分类号： G06F3/048
CPC分类号： G06F3/0481 , G06F1/1626 , G06F3/0362 , G06F3/0482 , G06F3/0485 , G06F3/0488 , G06F2200/1632
摘要： Predetermined travel locuss are set in a three-dimensional virtual space. Menu panels displaying menu items are arranged along the travel locuss assuming a display position set as a local origin so that the normal to each LCD panel will face a virtual camera. The transparency of a menu panel is raised in accordance with its distance to the virtual camera. A scroll operation moves menu panels along the travel locuss connecting display positions P until a selected specific menu panel reaches the display position P0. A display screen is drawn with the virtual camera and menu panels are three-dimensionally displayed in rolls.By sliding a stylus pen on the LCD panel, the menu screen displayed on the LCD panel scrolls at a velocity corresponding to the drag velocity. When the stylus pen is released from the LCD panel, an application program corresponding to the menu display entity (crosshatched) is activated.
摘要翻译：预定行驶轨迹设置在三维虚拟空间中。显示菜单项的菜单面板沿着行进位置布置，假设显示位置被设置为本地原点，使得每个LCD面板的法线将面向虚拟相机。根据与虚拟摄像机的距离，提高菜单面板的透明度。滚动操作沿着连接显示位置P的行进位置移动菜单面板，直到所选择的特定菜单面板到达显示位置P0。绘制虚拟相机的显示屏幕，菜单面板以三维显示。通过在LCD面板上滑动触控笔，液晶显示屏上显示的菜单屏幕以对应于拖动速度的速度滚动。当触控笔从LCD面板释放时，对应于菜单显示实体（交叉阴影线）的应用程序被激活。

7. 发明授权

US5610911A Method and device for channel selection 失效
标题翻译：频道选择的方法和设备
公开(公告)号：US5610911A
公开(公告)日：1997-03-11
申请号：US314047
申请日：1994-09-28
申请人： Hajime Ishikawa , Tetsuyuki Suzaki
发明人： Hajime Ishikawa , Tetsuyuki Suzaki
IPC分类号： H04J3/00 , H04J3/06 , H04J14/08
CPC分类号： H04J14/08 , H04J3/0602
摘要： The present invention provides a method and device for channel selection for setting at least one channel among N channels as a reference channel, detecting temporal location of the reference channel in a reception side, selecting an arbitrary channel using a relative time difference between the detected temporal location of the reference channel and that of the channel to be selected.
摘要翻译：本发明提供一种用于信道选择的方法和装置，用于在N个信道中设置至少一个信道作为参考信道，检测接收侧参考信道的时间位置，使用检测到的时间间隔之间的相对时间差来选择任意信道参考通道的位置和要选择的通道的位置。

8. 发明授权

US06632935B2 Genome DNA of bacterial symbiont of aphids 失效
标题翻译：蚜虫细菌共生体的基因组DNA
公开(公告)号：US06632935B2
公开(公告)日：2003-10-14
申请号：US09790988
申请日：2001-02-23
申请人： Shuji Shigenobu , Hidemi Watanabe , Hajime Ishikawa , Masahira Hattori , Yoshiyuki Sakaki
发明人： Shuji Shigenobu , Hidemi Watanabe , Hajime Ishikawa , Masahira Hattori , Yoshiyuki Sakaki
IPC分类号： C07H2104
CPC分类号： C07K14/195
摘要： The present invention provides a genomic DNA of Buchnera. That is, this invention provides genes derived from Buchnera sp., comprising DNA of the following (a) or (b); (a) a DNA selected from a group consisting of a DNA having a nucleotide sequence ranging from a start point to an end point as shown in Table 1 in a nucleotide sequence represented by SEQ ID NO:1, or a DNA complementary thereto, and (b) a DNA hybridizing to the DNA of (a) under stringent conditions and encoding a protein having a function same as that of the product expressed by the DNA.
摘要翻译：本发明提供了Buchnera的基因组DNA。也就是说，本发明提供了由Buchnera sp。衍生的基因，其包含以下（a）或（b）的DNA：（a）选自下组的DNA：（a）起始点到如SEQ ID NO：1所示的核苷酸序列中的表1所示的终点或与其互补的DNA，和（b）在严格条件下与（a）的DNA杂交的DNA 并编码具有与由DNA表达的产物相同功能的蛋白质

9. 发明授权

US5817275A Steel plate having excellent corrosion resistance and sulfide stress cracking resistance 失效
标题翻译：钢板具有优异的耐腐蚀性和耐硫化物应力开裂性
公开(公告)号：US5817275A
公开(公告)日：1998-10-06
申请号：US408655
申请日：1995-03-21
申请人： Hiroyuki Ogawa , Hiroshi Tamehiro , Akihiko Takahashi , Hajime Ishikawa , Takuya Hara
发明人： Hiroyuki Ogawa , Hiroshi Tamehiro , Akihiko Takahashi , Hajime Ishikawa , Takuya Hara
IPC分类号： C22C38/00 , C22C38/20 , C22C38/24 , C22C38/28 , C22C38/38
CPC分类号： C22C38/28 , C22C38/20 , C22C38/24
摘要： A steel plate comprising by weight C: 0.01 to 0.1%, Si: 0.02 to 0.5%, Mn: 0.6 to 2.0%, P
摘要翻译： 1.一种钢板，其包含C：0.01〜0.1％，Si：0.02〜0.5％，Mn：0.6〜2.0％，P <0.020％，S <0.010％，O <0.005％，Cr：0.1〜0.5％：0.1〜1.0％，Al：0.005〜0.05％，Ca：0.0005〜0.005％，Mn，S，O各自的含量调节为满足式Mnx（S + O）= 1.5×10 -2和0.01〜0.1％的选自Nb，V和Ti中的至少一种，余量由Fe和不可避免的杂质组成。该钢板在含有二氧化碳气体和硫化氢的环境中具有优异的耐腐蚀性和耐硫化物应力开裂性。

10. 发明授权

US5757800A Time division multiplexing transmitter and decoding circuit used for said transmitter and method for time division multiplexing transmission 失效
标题翻译：用于所述发射机的时分复用发射机和解码电路以及用于时分复用传输的方法
公开(公告)号：US5757800A
公开(公告)日：1998-05-26
申请号：US579613
申请日：1995-12-26
申请人： Hajime Ishikawa , Tetsuyuki Suzaki
发明人： Hajime Ishikawa , Tetsuyuki Suzaki
IPC分类号： H04J3/06 , H03M7/00 , H04J3/22
CPC分类号： H04J3/0605 , H04J3/0602
摘要： The present invention generates a reference signal including identification information based on a first coding method and generates data signals by a second coding method different from the first coding method. Next, it time division multiplexes signals by allocating the reference signal to a reference time slot and allocating data signals to time slots of which phase difference between the reference time slot is predetermined, and sends a multiplexed signal. In a receiver side, the reference time slot is detected based on identification information in a transmitted signal.
摘要翻译：本发明基于第一编码方法生成包括识别信息的参考信号，并且通过与第一编码方法不同的第二编码方法生成数据信号。接下来，通过将参考信号分配给参考时隙来对信号进行时分复用，并将数据信号分配给预定参考时隙之间的相位差的时隙，并发送多路复用信号。在接收机侧，基于发送信号中的识别信息来检测基准时隙。

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