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1. 发明申请

US20090323043A1 ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
标题翻译：微波投影曝光装置的照明系统
公开(公告)号：US20090323043A1
公开(公告)日：2009-12-31
申请号：US12509738
申请日：2009-07-27
申请人： Nils Dieckmann , Manfred Maul , Christian Hettich , Oliver Natt
发明人： Nils Dieckmann , Manfred Maul , Christian Hettich , Oliver Natt
IPC分类号： G03B27/72
CPC分类号： G03F7/70191
摘要： An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane). The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.
摘要翻译：微光刻投影曝光装置的照明系统可以包括至少一个至少在两个位置处具有不同透射率并且布置在瞳孔平面和场平面之间的透射滤光器。可以确定透射率分布，使得其具有对椭圆率的场依赖校正效应。在一些实施例中，远心度和/或辐照度均匀性不受该校正的影响。

2. 发明授权

US09116441B2 Illumination system of a microlithographic projection exposure apparatus 有权
标题翻译：微光刻投影曝光装置的照明系统
公开(公告)号：US09116441B2
公开(公告)日：2015-08-25
申请号：US13438179
申请日：2012-04-03
申请人： Nils Dieckmann , Manfred Maul , Christian Hettich , Oliver Natt
发明人： Nils Dieckmann , Manfred Maul , Christian Hettich , Oliver Natt
IPC分类号： G03B27/54 , G03B27/72 , G03F7/20
CPC分类号： G03F7/70191
摘要： An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane. The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.
摘要翻译：微光刻投影曝光装置的照明系统可以包括至少一个至少在两个位置处具有不同透射率并且布置在瞳孔平面和场平面之间的透射滤光器。可以确定透射率分布，使得其具有对椭圆率的场依赖校正效果。在一些实施例中，远心度和/或辐照度均匀性不受该校正的影响。

3. 发明授权

US08169594B2 Illumination system of a microlithographic projection exposure apparatus 有权
标题翻译：微光刻投影曝光装置的照明系统
公开(公告)号：US08169594B2
公开(公告)日：2012-05-01
申请号：US12509738
申请日：2009-07-27
申请人： Nils Dieckmann , Manfred Maul , Christian Hettich , Oliver Natt
发明人： Nils Dieckmann , Manfred Maul , Christian Hettich , Oliver Natt
IPC分类号： G03B27/54 , G03B27/42
CPC分类号： G03F7/70191
摘要： An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane). The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.
摘要翻译：微光刻投影曝光装置的照明系统可以包括至少一个至少在两个位置处具有不同透射率并且布置在瞳孔平面和场平面之间的透射滤光器。可以确定透射率分布，使得其具有对椭圆率的场依赖校正效应。在一些实施例中，远心度和/或辐照度均匀性不受该校正的影响。

4. 发明申请

US20120188527A1 ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
标题翻译：微波投影曝光装置的照明系统
公开(公告)号：US20120188527A1
公开(公告)日：2012-07-26
申请号：US13438179
申请日：2012-04-03
申请人： Nils Dieckmann , Manfred Maul , Christian Hettich , Oliver Natt
发明人： Nils Dieckmann , Manfred Maul , Christian Hettich , Oliver Natt
IPC分类号： G03B27/72
CPC分类号： G03F7/70191
摘要： An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane). The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.
摘要翻译：微光刻投影曝光装置的照明系统可以包括至少一个至少在两个位置处具有不同透射率并且布置在瞳孔平面和场平面之间的透射滤光器）。可以确定透射率分布，使得其具有对椭圆率的场依赖校正效应。在一些实施例中，远心度和/或辐照度均匀性不受该校正的影响。

5. 发明授权

US09568845B2 Mirror for use in a microlithography projection exposure apparatus 有权
标题翻译：用于微光刻投影曝光装置的镜子
公开(公告)号：US09568845B2
公开(公告)日：2017-02-14
申请号：US13417510
申请日：2012-03-12
申请人： Martin Rocktaeschel , Hartmut Enkisch , Franz-Josef Stickel , Oliver Natt , Hans-Juergen Mann , Sascha Migura
发明人： Martin Rocktaeschel , Hartmut Enkisch , Franz-Josef Stickel , Oliver Natt , Hans-Juergen Mann , Sascha Migura
IPC分类号： G03B27/68 , G03B27/52 , G03B27/54 , G03F7/20 , G02B5/08
CPC分类号： G03F7/70958 , G02B5/0833 , G03F7/70191 , G03F7/70308 , G03F7/70316
摘要： A mirror including a substrate and a reflective coating that includes a first group of layers and a second group of layers arranged between the substrate and the first group of layers. Both the first and second groups of layers include a plurality of alternating first material layers and second material layers, arranged one above another. The refractive index of the first material for radiation in the range of 5-30 nm is greater than the refractive index of the second material in that wavelength range. The first group of layers is configured to have a number of layers that is greater than 20, such that, upon irradiation with radiation having a wavelength in the range of 5-30 nm, less than 20% of the radiation reaches the second group of layers, which has a layer thickness variation for correcting the surface form of the mirror.
摘要翻译：一种包括基板和反射涂层的反射镜，其包括布置在基板和第一组层之间的第一组层和第二组层。第一组和第二组都包括多个交替的第一材料层和第二材料层，其彼此排列。用于5-30nm范围内的辐射的第一材料的折射率大于在该波长范围内的第二材料的折射率。第一组层被配置为具有大于20的多个层，使得当辐射具有在5-30nm范围内的波长的辐射时，少于20％的辐射达到第二组层，其具有用于校正反射镜的表面形式的层厚度变化。

6. 发明申请

US20100321661A1 METHOD FOR OPERATING AN ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
标题翻译：操作微波投影曝光装置照明系统的方法
公开(公告)号：US20100321661A1
公开(公告)日：2010-12-23
申请号：US12853971
申请日：2010-08-10
申请人： Oliver Natt , Frank Schlesener
发明人： Oliver Natt , Frank Schlesener
IPC分类号： G03B27/54
CPC分类号： G03F7/70133 , G03F7/70091 , G03F7/70125 , G03F7/70141 , G03F7/70191
摘要： A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated.
摘要翻译：提供了一种操作微光刻投影曝光装置的照明系统的方法。首先确定描述在照明系统照明的掩模上的点收敛的光束的属性的一组照明参数。进一步确定对照明参数的光学效应作为控制命令的函数的光学元件以及照明参数对由控制命令引起的光学元件的调整的反应的灵敏度。然后在考虑预先确定的灵敏度的同时确定控制命令，使得照明参数与预定目标照明参数的偏差满足预定的最小化标准。这些控制命令在掩模被点亮之前被应用于光学元件。

7. 发明申请

US20130250265A1 Projection Exposure Apparatus for EUV Microlithography and Method for Microlithographic Exposure 有权
标题翻译：用于EUV微光刻的投影曝光装置和微光刻曝光方法
公开(公告)号：US20130250265A1
公开(公告)日：2013-09-26
申请号：US13782390
申请日：2013-03-01
申请人： Marc Bienert , Heiko Feldmann , Aksel Goehnermeier , Oliver Natt , Johannes Ruoff
发明人： Marc Bienert , Heiko Feldmann , Aksel Goehnermeier , Oliver Natt , Johannes Ruoff
IPC分类号： G03F7/20
CPC分类号： G03F7/70091 , G03F7/701 , G03F7/70425
摘要： The disclosure relates to a projection exposure apparatus for EUV microlithography which includes an illumination system for illuminating a pattern, and a projection objective for imaging the pattern onto a light-sensitive substrate. The projection objective has a pupil plane with an obscuration. The illumination system generates light with an angular distribution having an illumination pole which extends over a range of polar angles and a range of azimuth angles and within which the light intensity is greater than an illumination pole minimum value. From the illumination pole toward large polar angles a dark zone is excluded within which the light intensity is less than the illumination pole minimum value, and which has in regions a form corresponding to the form of the obscuration of the pupil plane.
摘要翻译：本发明涉及一种用于EUV微光刻的投影曝光装置，其包括用于照亮图案的照明系统和用于将图案成像到感光基板上的投影物镜。投影物镜具有晦暗的瞳孔平面。照明系统产生具有角度分布的光，其具有在极角范围和方位角范围内延伸的照明极，并且光强度大于照明极点最小值。从照明极到大的极角，不包括光强度小于照明极最小值的暗区，并且在区域中具有对应于瞳孔平面遮蔽形式的形式。

8. 发明授权

US08467033B2 Method for operating an illumination system of a microlithographic projection exposure apparatus 有权
公开(公告)号：US08467033B2
公开(公告)日：2013-06-18
申请号：US12853971
申请日：2010-08-10
申请人： Oliver Natt , Frank Schlesener
发明人： Oliver Natt , Frank Schlesener
IPC分类号： G03B27/54 , G03B27/72 , G03B27/32 , G03F7/20
CPC分类号： G03F7/70133 , G03F7/70091 , G03F7/70125 , G03F7/70141 , G03F7/70191
摘要： A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimization criterion. These control commands are applied to the optical elements, before the mask is illuminated.

9. 发明申请

US20080079939A1 INSTRUMENT FOR MEASURING THE ANGULAR DISTRIBUTION OF LIGHT PRODUCED BY AN ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 审中-公开
标题翻译：用于测量由微波投影曝光装置的照明系统产生的光的角度分布的仪器
公开(公告)号：US20080079939A1
公开(公告)日：2008-04-03
申请号：US11864051
申请日：2007-09-28
申请人： Damian Fiolka , Gerhard Karl , Oliver Natt
发明人： Damian Fiolka , Gerhard Karl , Oliver Natt
IPC分类号： G01J4/00
CPC分类号： G01J1/4228 , G01J1/04 , G01J1/0411 , G01J1/0429 , G01J1/08 , G01J1/4257 , G03F7/70133 , G03F7/70566
摘要： Instruments (as well as related components and methods) to measure the angular distribution of light produced by an illumination system of a microlithographic projection exposure apparatus are disclosed. Such apparatusus are used for the production of integrated circuits and other microstructured components.
摘要翻译：公开了用于测量由微光刻投影曝光设备的照明系统产生的光的角分布的仪器（以及相关部件和方法）。这种仪器用于生产集成电路和其他微结构元件。

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