会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Systems and methods for depositing material onto microfeature workpieces
    • 将材料沉积在微型工件上的系统和方法
    • US20060134345A1
    • 2006-06-22
    • US11018142
    • 2004-12-20
    • Neal RuegerJoel Drewes
    • Neal RuegerJoel Drewes
    • H05H1/24C23C16/00
    • C23C16/45536C23C16/45551
    • Systems and methods for depositing materials onto a microfeature workpiece are disclosed herein. In one embodiment, a system includes a first deposition chamber, a gas distributor carried by the first deposition chamber, a second deposition chamber operably coupled to the first deposition chamber, an energy source, and a workpiece support movable between the first and second deposition chambers. The energy source is configured to generate a plasma energy and direct the plasma energy toward a plasma zone in the second deposition chamber. The system may also include a barrier positioned in the second deposition chamber to divide the plasma zone into a first zone and a second zone. The barrier is configured to selectively control the movement of ions from the first zone to the second zone.
    • 本文公开了将材料沉积到微特征工件上的系统和方法。 在一个实施例中,系统包括第一沉积室,由第一沉积室承载的气体分配器,可操作地耦合到第一沉积室的第二沉积室,能量源和可在第一和第二沉积室之间移动的工件支撑件 。 能量源被配置为产生等离子体能量并将等离子体能量引导到第二沉积室中的等离子体区域。 该系统还可以包括位于第二沉积室中的隔板,以将等离子体区分成第一区和第二区。 阻挡层构造成选择性地控制离子从第一区到第二区的移动。
    • 2. 发明授权
    • Assemblies for plasma-enhanced treatment of substrates
    • 用于等离子体增强处理基材的组件
    • US07649316B2
    • 2010-01-19
    • US11777762
    • 2007-07-13
    • Neal RuegerStephen J. Kramer
    • Neal RuegerStephen J. Kramer
    • H01J17/49
    • H01J9/02H01J11/10H01J37/32596H05H1/2406H05H1/46H05H2001/466
    • Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.
    • 一些实施例包括形成等离子体产生微结构的方法。 铝可以被阳极化以形成具有延伸穿过其中的多个开口的氧化铝体。 可以在开口内形成导电衬里,并且可以形成电路以控制通过导电衬套的电流。 导电衬里形成多个中空阴极,并且电流流动被配置为在中空阴极内产生和维持等离子体。 各种空心阴极内的等离子体或一组空心阴极可以独立控制。 这种独立控制的等离子体可用于在显示器或基板上产生图案。 在一些实施例中,等离子体可用于等离子体辅助蚀刻和/或等离子体辅助沉积。 一些实施例包括包含多个等离子体产生结构的构造和组件。
    • 5. 发明申请
    • Method and system for discretely controllable plasma processing
    • 离子控制等离子体处理方法和系统
    • US20060208649A1
    • 2006-09-21
    • US11083433
    • 2005-03-17
    • Neal RuegerGurtej Sandhu
    • Neal RuegerGurtej Sandhu
    • H01J7/24
    • H01J37/3233H01J37/32366
    • A method and system for plasma generation and processing includes a plurality of beam generators each locally controllable and configured for operation upon a single substrate. A control circuit couples to each of the plurality of beam generators with the control circuit configured to independently regulate at least a portion of the plurality of beam generators. A process gas is introduced into an area above a surface of a substrate. A plurality of beam generators is locally controlled and is directed at the process gas. The beam generators independently emit electrons as controlled and at least a portion of the process gas is converted into plasma according to the electrons emitted from the plurality of the independently controllable beam generators. The substrate is processed using the plasma according to local control of each of the plurality of beam generators.
    • 用于等离子体产生和处理的方法和系统包括多个光束发生器,每个光束发生器可局部地可控制并且被配置为在单个衬底上操作。 控制电路耦合到多个光束发生器中的每一个,控制电路被配置为独立地调节多个光束发生器的至少一部分。 将工艺气体引入衬底表面上方的区域。 多个束发生器被局部控制并且被引导到处理气体。 束发生器独立地发射受电子的电子,并且至少一部分处理气体根据从多个可独立控制的光束发生器发射的电子转换为等离子体。 根据多个光束发生器中的每一个的局部控制,使用等离子体处理衬底。
    • 6. 发明申请
    • Plasma-Generating Structures and Display Devices
    • 等离子体发生结构和显示设备
    • US20120313517A1
    • 2012-12-13
    • US13593280
    • 2012-08-23
    • Neal RuegerStephen J. Kramer
    • Neal RuegerStephen J. Kramer
    • H01J61/09H01J17/49
    • H01J9/02H01J11/10H01J37/32596H05H1/2406H05H1/46H05H2001/466
    • Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.
    • 一些实施例包括形成等离子体产生微结构的方法。 铝可以被阳极化以形成具有延伸穿过其中的多个开口的氧化铝体。 可以在开口内形成导电衬里,并且可以形成电路以控制通过导电衬套的电流。 导电衬里形成多个中空阴极,并且电流流动被配置为在中空阴极内产生和维持等离子体。 各种空心阴极内的等离子体或一组空心阴极可以独立控制。 这种独立控制的等离子体可用于在显示器或基板上产生图案。 在一些实施例中,等离子体可用于等离子体辅助蚀刻和/或等离子体辅助沉积。 一些实施例包括包含多个等离子体产生结构的构造和组件。
    • 10. 发明申请
    • SYSTEM AND METHOD FOR DETECTING FLOW IN A MASS FLOW CONTROLLER
    • 用于检测流量控制器中的流量的系统和方法
    • US20060236513A1
    • 2006-10-26
    • US11456055
    • 2006-07-06
    • Gurtej SandhuSujit SharanNeal RuegerAllen Mardian
    • Gurtej SandhuSujit SharanNeal RuegerAllen Mardian
    • H01L21/66F17D3/00F16K37/00G01B7/00
    • G01F1/40G01F1/42G01P13/0006G01P13/0013G01P13/0033G05D7/0635Y10T29/41Y10T137/0396Y10T137/7722Y10T137/775Y10T137/8242
    • Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.
    • 提供了用于检测质量流量控制器(MFC)中的流量的系统和方法。 MFC中的门的位置被感测或以其他方式确定以监视通过MFC的流动并立即或几乎立即检测到流动故障。 在本发明的一个实施例中,提供了一种新颖的MFC。 MFC包括孔口,质量流量控制门,致动器和门位置传感器。 致动器移动控制门以控制通过孔口的流动。 门位置传感器确定门位置和/或门移动以监视流量并立即或几乎立即检测到流动故障。 根据本发明的一个实施例,门位置传感器包括用于发送信号的发射机和用于接收信号的接收机,使得接收机基于所接收的信号提供门的位置的指示。 这里描述了门位置传感器的其他实施例,以及在半导体制造过程中并入新颖的MFC的系统和方法。