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1. 发明授权

US08278666B1 Method and apparatus for growing high purity 2H-silicon carbide 有权
标题翻译：生长高纯度2H-碳化硅的方法和装置
公开(公告)号：US08278666B1
公开(公告)日：2012-10-02
申请号：US12821877
申请日：2010-06-23
申请人： Narsingh B. Singh , Sean R. McLaughlin , Thomas J. Knight , Robert M. Young , Brian P. Wagner , David A. Kahler , Andre E. Berghmans , David J. Knuteson , Ty R. McNutt , Jerry W. Hedrick, Jr. , George M. Bates , Kenneth Petrosky
发明人： Narsingh B. Singh , Sean R. McLaughlin , Thomas J. Knight , Robert M. Young , Brian P. Wagner , David A. Kahler , Andre E. Berghmans , David J. Knuteson , Ty R. McNutt , Jerry W. Hedrick, Jr. , George M. Bates , Kenneth Petrosky
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L21/02381 , C30B23/02 , C30B25/02 , C30B25/183 , C30B29/36 , C30B29/403 , H01L21/02447 , H01L21/02502 , H01L21/0254 , H01L21/0262
摘要： The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one embodiment, the disclosure relates to doping an underlying substrate or support layer with one or more surfactants to nucleate and grow high purity 2H-SiC. In another embodiment, the disclosure relates to a method for preparing 2H-SiC compositions by nucleating 2H-SiC on another SiC polytype using one or more surfactants. The surfactants can include AlN, Te, Sb and similar compositions. These nucleate SiC into disc form which changes to hexagonal 2H-SiC material.
摘要翻译：本公开涉及高纯度2H-SiC组合物及其制备方法。这里所示的实施方案适用于2H-SiC的薄膜和体积生长。根据一个实施方案，本公开涉及用一种或多种表面活性剂掺杂下面的基底或支撑层以使高纯度2H-SiC成核和生长。在另一个实施方案中，本公开内容涉及通过使用一种或多种表面活性剂在其它SiC多型体上成核2H-SiC制备2H-SiC组合物的方法。表面活性剂可以包括AlN，Te，Sb和类似组合物。这些将SiC成核转变成六角形2H-SiC材料的盘形。

2. 发明授权

US07888248B2 Method of producing large area SiC substrates 有权
标题翻译：生产大面积SiC衬底的方法
公开(公告)号：US07888248B2
公开(公告)日：2011-02-15
申请号：US11826278
申请日：2007-07-13
申请人： Narsingh Bahadur Singh , Brian P. Wagner , David J. Knuteson , David Kahler , Andre E. Berghmans , Michael Aumer , Jerry W. Hedrick , Marc E. Sherwin , Michael M. Fitelson , Mark S. Usefara , Sean McLaughlin , Travis Randall , Thomas J. Knight
发明人： Narsingh Bahadur Singh , Brian P. Wagner , David J. Knuteson , David Kahler , Andre E. Berghmans , Michael Aumer , Jerry W. Hedrick , Marc E. Sherwin , Michael M. Fitelson , Mark S. Usefara , Sean McLaughlin , Travis Randall , Thomas J. Knight
IPC分类号： H01L21/20
CPC分类号： C30B25/105 , C30B23/02 , C30B25/02 , C30B29/36 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/02458 , H01L21/02502 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02658 , Y10T428/259
摘要： A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.
摘要翻译：公开了一种在Si衬底上生长含SiC膜的方法。可以通过例如等离子体溅射，化学气相沉积或原子层沉积在Si衬底上形成含SiC的膜。这样生长的含SiC膜提供了用于生长半导体晶体的昂贵的SiC晶圆的替代方案。

3. 发明申请

US20090014756A1 Method of producing large area SiC substrates 有权
标题翻译：生产大面积SiC衬底的方法
公开(公告)号：US20090014756A1
公开(公告)日：2009-01-15
申请号：US11826278
申请日：2007-07-13
申请人： Narsingh Bahadur Singh , Brian P. Wagner , David J. Knuteson , David Kahler , Andre E. Berghmans , Michael Aumer , Jerry W. Hedrick , Marc E. Sherwin , Michael M. Fitelson , Mark S. Usefara , Sean McLaughlin , Travis Randall , Thomas J. Knight
发明人： Narsingh Bahadur Singh , Brian P. Wagner , David J. Knuteson , David Kahler , Andre E. Berghmans , Michael Aumer , Jerry W. Hedrick , Marc E. Sherwin , Michael M. Fitelson , Mark S. Usefara , Sean McLaughlin , Travis Randall , Thomas J. Knight
IPC分类号： H01L29/739 , B32B5/16 , H01L21/20
CPC分类号： C30B25/105 , C30B23/02 , C30B25/02 , C30B29/36 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/02458 , H01L21/02502 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02658 , Y10T428/259
摘要： A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.
摘要翻译：公开了一种在Si衬底上生长含SiC膜的方法。可以通过例如等离子体溅射，化学气相沉积或原子层沉积在Si衬底上形成含SiC的膜。这样生长的含SiC膜提供了用于生长半导体晶体的昂贵的SiC晶圆的替代方案。

4. 发明授权

US07683400B1 Semiconductor heterojunction devices based on SiC 有权
公开(公告)号：US07683400B1
公开(公告)日：2010-03-23
申请号：US11474398
申请日：2006-06-26
申请人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
发明人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
IPC分类号： H01L29/08
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/7781 , H01L29/7786
摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

5. 发明授权

US07855108B2 Semiconductor heterojunction devices based on SiC 有权
标题翻译：基于SiC的半导体异质结器件
公开(公告)号：US07855108B2
公开(公告)日：2010-12-21
申请号：US12713753
申请日：2010-02-26
申请人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
发明人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
IPC分类号： H01L21/338
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/7781 , H01L29/7786
摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).
摘要翻译：可以通过CVD，PVD和MOCVD生长用于SiC上异质结构的Si（1-x）MxC材料。掺杂有诸如Al的金属的SIC改变带隙并因此改变异质结构。使用SiC和金属源的SiC Si（1-x）MxC异质结的生长允许制造改进的HFMT（高频迁移率晶体管），HBT（异质结双极晶体管）和HEMT（高电子迁移率晶体管）。

6. 发明申请

US20100192840A1 SEMICONDUCTOR HETEROJUNCTION DEVICES BASED ON SiC 有权
标题翻译：基于SiC的半导体异质结器件
公开(公告)号：US20100192840A1
公开(公告)日：2010-08-05
申请号：US12713753
申请日：2010-02-26
申请人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
发明人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
IPC分类号： C30B23/02
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/7781 , H01L29/7786
摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).
摘要翻译：可以通过CVD，PVD和MOCVD生长用于SiC上异质结构的Si（1-x）MxC材料。掺杂有诸如Al的金属的SIC改变带隙并因此改变异质结构。使用SiC和金属源的SiC Si（1-x）MxC异质结的生长允许制造改进的HFMT（高频迁移率晶体管），HBT（异质结双极晶体管）和HEMT（高电子迁移率晶体管）。

7. 发明申请

US20080179534A1 Nuclear radiation detection system 失效
标题翻译：核辐射检测系统
公开(公告)号：US20080179534A1
公开(公告)日：2008-07-31
申请号：US11699335
申请日：2007-01-30
申请人： Narsingh Bahadur Singh , Aaron A. Pesetski , Andre Berghmans , Brian P. Wagner , David Kahler , David J. Knuteson , Darren Thomson
发明人： Narsingh Bahadur Singh , Aaron A. Pesetski , Andre Berghmans , Brian P. Wagner , David Kahler , David J. Knuteson , Darren Thomson
IPC分类号： G01J1/42
CPC分类号： G01J1/429 , G01J1/0488
摘要： A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of β- and γ-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site. It may also be used for surveillance of contamination in case of a nuclear accident.
摘要翻译：公开了使用窄带UV晶体滤波器的核辐射检测系统。由于可以在大约200-350nm（紫外范围）的光谱范围内检测在β辐射和γ射线衰变期间产生的光子，所以使用基于UV滤光片的光电传感器进行检测。核辐射检测系统包括能够聚焦在辐射源上的光学组件，具有窄带UV晶体滤波器并被定位成接收透过光学组件的光的UV滤光器组件，以及定位成接收透过光学组件的光的光检测器紫外线过滤器总成。窄带UV晶体滤波器由选自氟硅酸镍，氟硼酸镍和硫酸镍镍的晶体制成。可以掺杂氟硅酸镍，氟硼酸镍和硫酸镍钾以实现更窄的带过滤器。辐射检测系统可用于监测核电厂或核废料堆场的污染。也可用于在发生核事故时监视污染。

8. 发明授权

US07525099B2 Nuclear radiation detection system 失效
标题翻译：核辐射检测系统
公开(公告)号：US07525099B2
公开(公告)日：2009-04-28
申请号：US11699335
申请日：2007-01-30
申请人： Narsingh Bahadur Singh , Aaron A. Pesetski , Andre Berghmans , Brian P. Wagner , David Kahler , David J. Knuteson , Darren Thomson
发明人： Narsingh Bahadur Singh , Aaron A. Pesetski , Andre Berghmans , Brian P. Wagner , David Kahler , David J. Knuteson , Darren Thomson
IPC分类号： G01J1/42
CPC分类号： G01J1/429 , G01J1/0488
摘要： A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of β- and γ-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site. It may also be used for surveillance of contamination in case of a nuclear accident.
摘要翻译：公开了使用窄带UV晶体滤波器的核辐射检测系统。由于可以在大约200-350nm（紫外范围）的光谱范围内检测在β辐射和γ射线衰变期间产生的光子，所以使用基于UV滤光片的光电传感器进行检测。核辐射检测系统包括能够聚焦在辐射源上的光学组件，具有窄带UV晶体滤波器并被定位成接收透过光学组件的光的UV滤光器组件，以及定位成接收透过光学组件的光的光检测器紫外线过滤器总成。窄带UV晶体滤波器由选自氟硅酸镍，氟硼酸镍和硫酸镍镍的晶体制成。可以掺杂氟硅酸镍，氟硼酸镍和硫酸镍钾以实现更窄的带过滤器。辐射检测系统可用于监测核电厂或核废料堆场的污染。也可用于在发生核事故时监视污染。

9. 发明授权

US09653398B1 Non-oxide based dielectrics for superconductor devices 有权
公开(公告)号：US09653398B1
公开(公告)日：2017-05-16
申请号：US14962981
申请日：2015-12-08
申请人： James T. Kelliher , Sandro J. Di Giacomo , Cory E. Sherman , Brian P. Wagner
发明人： James T. Kelliher , Sandro J. Di Giacomo , Cory E. Sherman , Brian P. Wagner
IPC分类号： H01L39/24 , H01L23/532 , H01L39/02
CPC分类号： H01L23/53285 , H01L21/76891 , H01L39/2406
摘要： A method of forming a superconductor device is provided. The method includes depositing a non-oxide based dielectric layer over a substrate, depositing a photoresist material layer over the non-oxide based dielectric layer, irradiating and developing the photoresist material layer to form a via pattern in the photoresist material layer, and etching the non-oxide based dielectric layer to form openings in the non-oxide based dielectric layer based on the via pattern. The method further comprises stripping the photoresist material layer, and filling the openings in the non-oxide based dielectric with a superconducting material to form a set of superconducting contacts.

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