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1. 发明申请

US20080145961A1 Semiconductor Light Emitting Device and Manufacturing Method Thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20080145961A1
公开(公告)日：2008-06-19
申请号：US12031068
申请日：2008-02-14
申请人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
发明人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译：半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。该器件可以在衬底上包括透明衬底和半导体层。半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

2. 发明授权

US07605403B2 Semiconductor light-emitting device and fabrication method of the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07605403B2
公开(公告)日：2009-10-20
申请号：US11125142
申请日：2005-05-10
申请人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
发明人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
IPC分类号： H01L27/15
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/05001 , H01L2224/13
摘要： A semiconductor light-emitting device can include a nitride semiconductor light-emitting layer and can supply a current to an entire light-emitting region quickly and efficiently to output high-intensity light. The semiconductor light-emitting device can include: a transparent substrate; a first conductivity type nitride semiconductor layer; a nitride semiconductor light-emitting layer; a second conductivity type nitride semiconductor layer; a notch region that cuts the second conductivity type nitride semiconductor layer and the nitride semiconductor light-emitting layer and exposes the first conductivity type nitride semiconductor layer, to define mesa active regions and a mesa electrode drawing region; an electrode for the first conductivity type; an ohmic electrode for the second conductivity type; and a supporting substrate including connecting members for the first and second conductivity types.
摘要翻译：半导体发光器件可以包括氮化物半导体发光层，并且可以快速高效地向整个发光区域提供电流以输出高强度光。半导体发光装置可以包括：透明基板; 第一导电型氮化物半导体层; 氮化物半导体发光层; 第二导电型氮化物半导体层; 切割第二导电型氮化物半导体层和氮化物半导体发光层并露出第一导电型氮化物半导体层以限定台面有源区和台面电极绘图区的切口区; 用于第一导电类型的电极; 用于第二导电类型的欧姆电极; 以及支撑基板，其包括用于第一和第二导电类型的连接构件。

3. 发明授权

US07595206B2 Manufacturing method for semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US07595206B2
公开(公告)日：2009-09-29
申请号：US12031068
申请日：2008-02-14
申请人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
发明人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译：半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。该器件可以在衬底上包括透明衬底和半导体层。半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

4. 发明授权

US07271426B2 Semiconductor light emitting device on insulating substrate and its manufacture method 有权
标题翻译：绝缘基板上的半导体发光器件及其制造方法
公开(公告)号：US07271426B2
公开(公告)日：2007-09-18
申请号：US10971305
申请日：2004-10-22
申请人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
发明人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L21/00 , H01L21/44
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/05001 , H01L2224/13
摘要： A semiconductor LED device includes: a transparent substrate stacked on which are an n-type nitride semiconductor layer, a nitride semiconductor light emission layer and a p-type nitride semiconductor layer; recess regions cutting the p-type layer and light emission layer and exposing the n-type layer, defining a plurality of mesa active regions and mesa electrode pull-up regions; an n-side electrode formed on the n-type layer in the recess surrounding the mesa active regions and extending onto the mesa electrode pull-up regions; a p-side electrode formed on the p-type layer of each of the mesa active regions; and a support substrate including n-side connection members connected to and facing the n-type electrodes and p-side connection members connected to and facing the p-side electrodes.
摘要翻译：半导体LED器件包括：层叠有n型氮化物半导体层，氮化物半导体发光层和p型氮化物半导体层的透明衬底; 凹陷区域切割p型层和发光层并暴露n型层，限定多个台面活性区域和台面电极上拉区域; n侧电极，形成在所述凹部中的所述凹部中的所述n型层上，并且延伸到所述台面电极上拉区域; p侧电极，形成在各台面活性区域的p型层上; 以及支撑基板，其包括连接到n面电极的n侧连接构件和与p侧电极连接并面向p侧电极的p侧连接构件。

5. 发明申请

US20050281303A1 Semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050281303A1
公开(公告)日：2005-12-22
申请号：US11154814
申请日：2005-06-17
申请人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
发明人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
IPC分类号： H01L33/26 , H01L33/40 , H01L33/62 , H01S5/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译：半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。该器件可以在衬底上包括透明衬底和半导体层。半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

6. 发明申请

US20050253161A1 Semiconductor light emitting device on insulating substrate and its manufacture method 有权
标题翻译：绝缘基板上的半导体发光器件及其制造方法
公开(公告)号：US20050253161A1
公开(公告)日：2005-11-17
申请号：US10971305
申请日：2004-10-22
申请人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
发明人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
IPC分类号： H01L29/06 , H01L33/06 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/34 , H01L33/38 , H01L33/40
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/05001 , H01L2224/13
摘要： A semiconductor LED device includes: a transparent substrate stacked on which are an n-type nitride semiconductor layer, a nitride semiconductor light emission layer and a p-type nitride semiconductor layer; recess regions cutting the p-type layer and light emission layer and exposing the n-type layer, defining a plurality of mesa active regions and mesa electrode pull-up regions; an n-side electrode formed on the n-type layer in the recess surrounding the mesa active regions and extending onto the mesa electrode pull-up regions; a p-side electrode formed on the p-type layer of each of the mesa active regions; and a support substrate including n-side connection members connected to and facing the n-type electrodes and p-side connection members connected to and facing the p-side electrodes.
摘要翻译：半导体LED器件包括：层叠有n型氮化物半导体层，氮化物半导体发光层和p型氮化物半导体层的透明衬底; 凹陷区域切割p型层和发光层并暴露n型层，限定多个台面活性区域和台面电极上拉区域; n侧电极，形成在所述凹部中的所述凹部中的所述n型层上，并且延伸到所述台面电极上拉区域; p侧电极，形成在各台面活性区域的p型层上; 以及支撑基板，其包括连接到n面电极的n侧连接构件和与p侧电极连接并面向p侧电极的p侧连接构件。

7. 发明授权

US07411220B2 Semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07411220B2
公开(公告)日：2008-08-12
申请号：US11154814
申请日：2005-06-17
申请人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
发明人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
IPC分类号： H01L29/26
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译：半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。该器件可以在衬底上包括透明衬底和半导体层。半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

8. 发明申请

US20050253156A1 Semiconductor light-emitting device and fabrication method of the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050253156A1
公开(公告)日：2005-11-17
申请号：US11125142
申请日：2005-05-10
申请人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
发明人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
IPC分类号： H01L29/06 , H01L33/06 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/34 , H01L33/38 , H01L33/40
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/05001 , H01L2224/13
摘要： A semiconductor light-emitting device can include a nitride semiconductor light-emitting layer and can supply a current to an entire light-emitting region quickly and efficiently to output high-intensity light. The semiconductor light-emitting device can include: a transparent substrate; a first conductivity type nitride semiconductor layer; a nitride semiconductor light-emitting layer; a second conductivity type nitride semiconductor layer; a notch region that cuts the second conductivity type nitride semiconductor layer and the nitride semiconductor light-emitting layer and exposes the first conductivity type nitride semiconductor layer, to define mesa active regions and a mesa electrode drawing region; an electrode for the first conductivity type; an ohmic electrode for the second conductivity type; and a supporting substrate including connecting members for the first and second conductivity types.
摘要翻译：半导体发光器件可以包括氮化物半导体发光层，并且可以快速高效地向整个发光区域提供电流以输出高强度光。半导体发光装置可以包括：透明基板; 第一导电型氮化物半导体层; 氮化物半导体发光层; 第二导电型氮化物半导体层; 切割第二导电型氮化物半导体层和氮化物半导体发光层并露出第一导电型氮化物半导体层以限定台面有源区和台面电极绘图区的切口区; 用于第一导电类型的电极; 用于第二导电类型的欧姆电极; 以及支撑基板，其包括用于第一和第二导电类型的连接构件。

9. 发明授权

US07939838B2 Semiconductor light emitting device with transparent substrate and reflective slope 有权
标题翻译：具有透明基板和反射斜率的半导体发光器件
公开(公告)号：US07939838B2
公开(公告)日：2011-05-10
申请号：US11606379
申请日：2006-11-30
申请人： Shinichi Tanaka , Naochica Horio , Munehiro Kato , Satoshi Tanaka
发明人： Shinichi Tanaka , Naochica Horio , Munehiro Kato , Satoshi Tanaka
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor light emitting device includes a semiconductor layer having a recess extending downwardly from a top surface thereof along a pattern of a closed line so that said recess defines and encloses a region of the semiconductor layer that emits light, said semiconductor layer having a downward slope in at least a portion of its side end face located outside the closed line pattern of said recess; a first electrode on said downward slope of the side end face of the semiconductor layer and electrically in contact with a portion of said semiconductor layer, wherein said first electrode downwardly reflects light that is emitted by said semiconductor layer and that reaches the first electrode; and a second electrode electrically in contact with a portion of said semiconductor layer located inside the closed line pattern of said recess.
摘要翻译：半导体发光器件包括半导体层，该半导体层具有从其顶表面沿着封闭线的图案向下延伸的凹槽，使得所述凹部限定和包围发射光的半导体层的区域，所述半导体层具有向下的斜面在其侧端面的至少一部分位于所述凹部的闭合线图案之外; 所述半导体层的侧端面的所述向下斜面上的第一电极与所述半导体层的一部分电接触，其中所述第一电极向下反射由所述半导体层发射并到达所述第一电极的光; 以及与位于所述凹部的闭合线图案内的所述半导体层的一部分电接触的第二电极。

10. 发明授权

US06635903B2 White light emission diode 有权
公开(公告)号：US06635903B2
公开(公告)日：2003-10-21
申请号：US09898500
申请日：2001-07-02
申请人： Munehiro Kato , Michihiro Sano , Hiroyuki Sato , Kenichi Morikawa
发明人： Munehiro Kato , Michihiro Sano , Hiroyuki Sato , Kenichi Morikawa
IPC分类号： H01L3300
CPC分类号： H01L33/505 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014 , H01L2924/00
摘要： This invention aims to provide a white light emission diode arranged so that t rays emitted from an exciting element comprising a n-type semiconductor layer and a p-type semiconductor layer are converted by a wavelength converting element to white light which is then irradiated through molded resin. The white light emission diode offers a high color rendering effect desired for liquid crystal back light and minimizes deterioration of the molded resin to improve its light emission life characteristic. The wavelength converting element is provided on one surface of the exciting element and an insulating film is deposited on the other surface with interposition of a p-type ohmic electrode exhibiting a high reflectivity in UV wavelength band. The exciting element has its side surface covered with a n-type ohmic electrode exhibiting a high reflectivity in UV wavelength band.

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