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1. 发明授权

US09287433B2 Radiation detector 有权
公开(公告)号：US09287433B2
公开(公告)日：2016-03-15
申请号：US14164702
申请日：2014-01-27
申请人： Tsinghua University , Nuctech Company Limited
发明人： Lan Zhang , Yulan Li , Yuanjing Li , Yinong Liu , Jianqiang Fu , Hao Jiang , Wei Zhang , Yanqing Liu , Jun Li
IPC分类号： H01L31/115 , G01T1/24
CPC分类号： H01L31/115 , G01T1/241
摘要： A radiation detector is provided. The radiation detection comprises a semiconductor crystal for detecting radiation. The semiconductor crystal comprises a top surface, a bottom surface, and at least one side surface. At least one anode is arranged on at least one of the top surface, the bottom surface, and the at least one side surface. At least one cathode is arranged on at least another one of the top surface, the bottom surface, and the at least one side surface. The at least one anode each has a stripe shape, the at least one cathode each has a planar or curved shape, and the at least one cathode and the at least one anode extend in parallel with respect to each other to a length substantially equal to that of the anode. Such an electrode structure can improve energy resolution and detection efficiency of the radiation detector effectively.

2. 发明授权

US09766354B2 Semiconductor detector 有权
公开(公告)号：US09766354B2
公开(公告)日：2017-09-19
申请号：US14152332
申请日：2014-01-10
申请人： NUCTECH COMPANY LIMITED , TSINGHUA UNIVERSITY
发明人： Yuanjing Li , Lan Zhang , Yulan Li , Yinong Liu , Jianqiang Fu , Hao Jiang , Zhi Deng , Tao Xue , Wei Zhang , Jun Li
IPC分类号： G01T3/08 , G01T1/36 , G01T1/24
CPC分类号： G01T1/366 , G01T1/241 , G01T3/08
摘要： The invention provides a semiconductor detector, and the semiconductor detector comprises a semiconductor crystal, a cathode, an anode and at least one ladder electrode; the semiconductor crystal comprises a top surface, a bottom surface and at least one side; the cathode, the anode and the ladder electrode are conductive thin films deposited on a surface of the semiconductor crystal; the cathode is disposed on the bottom surface of the semiconductor crystal, the anode is disposed on the top surface of the semiconductor crystal, the ladder electrode is disposed on the at least one side of the semiconductor crystal; and the ladder electrode comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution.

3. 发明授权

US09835739B2 Method and apparatus for processing signals of semiconductor detector 有权
公开(公告)号：US09835739B2
公开(公告)日：2017-12-05
申请号：US14800635
申请日：2015-07-15
申请人： TSINGHUA UNIVERSITY , NUCTECH COMPANY LIMITED
发明人： Lan Zhang , Yulan Li , Yuanjing Li , Jianqiang Fu , Yingshuai Du , Wei Zhang , Xuming Ma , Jun Li
IPC分类号： G01T1/24 , H04N5/32
CPC分类号： G01T1/247 , G01T1/241 , H04N5/32
摘要： The present invention provides a method and apparatus for processing signals of a semiconductor detector, including: acquiring a relationship of a time difference between anode and cathode signals of the semiconductor detector with an anode signal amplitude; obtaining an optimal data screening interval according to the relationship of the time difference between anode and cathode signals of the semiconductor detector with the anode signal amplitude, wherein the optimal data screening interval is an interval where the time difference between the anode and cathode signals is greater than 50 ns; and screening and processing the collected data according to the optimal data screening interval when the semiconductor detector collects data. The present invention better overcomes the inherent crystal defects of the detector, reduces the effect of background noise, increases the energy resolution of the cadmium zinc telluride detector under room temperature, and improves the peak-to-compton ratio.

4. 发明申请

US20140319635A1 SEMICONDUCTOR DETECTOR 有权
标题翻译：半导体检测器
公开(公告)号：US20140319635A1
公开(公告)日：2014-10-30
申请号：US14152332
申请日：2014-01-10
申请人： TSINGHUA UNIVERSITY , NUCTECH COMPANY LIMITED
发明人： Yuanjing Li , Lan Zhang , Yulan Li , Yinong Liu , Jianqiang Fu , Hao Jiang , Zhi Deng , Tao Xue , Wei Zhang , Jun Li
IPC分类号： G01T1/36 , G01T3/08
CPC分类号： G01T1/366 , G01T1/241 , G01T3/08
摘要： The invention provides a semiconductor detector, and the semiconductor detector comprises a semiconductor crystal, a cathode, an anode and at least one ladder electrode; the semiconductor crystal comprises a top surface, a bottom surface and at least one side; the cathode, the anode and the ladder electrode are conductive thin films deposited on a surface of the semiconductor crystal; the cathode is disposed on the bottom surface of the semiconductor crystal, the anode is disposed on the top surface of the semiconductor crystal, the ladder electrode is disposed on the at least one side of the semiconductor crystal; and the ladder electrode comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution.
摘要翻译：本发明提供一种半导体检测器，该半导体检测器包括半导体晶体，阴极，阳极和至少一个梯形电极; 半导体晶体包括顶表面，底表面和至少一个侧面; 阴极，阳极和梯形电极是沉积在半导体晶体表面上的导电薄膜; 阴极设置在半导体晶体的底表面上，阳极设置在半导体晶体的顶表面上，梯形电极设置在半导体晶体的至少一个侧面上; 并且梯形电极包括多个子电极。与现有技术相比，半导体检测器可以提高能量分辨率。

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