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    • 2. 发明授权
    • Terahertz-wave detection element, manufacturing method therefor, and observation apparatus
    • 太赫兹波检测元件及其制造方法和观察装置
    • US09574933B2
    • 2017-02-21
    • US14665124
    • 2015-03-23
    • NGK INSULATORS, LTD.
    • Jungo KondoYuichi IwataTetsuya Ejiri
    • G01J1/04G01N21/3581G01J3/02G01N21/3586G01J3/42G02F1/03
    • G01J1/0407G01J3/021G01J3/42G01N21/3581G01N21/3586G02F1/03
    • Provided a terahertz-wave detection element with high spatial resolution and suppressing a crack occurrence. A method of manufacturing the detection element capable of detecting a spatial intensity distribution of a terahertz wave includes: a step of forming an oxide layer on one main surface of a first substrate consisting of an electro-optic crystal; a step of joining the one main surface of the first substrate and a second substrate by an adhesive consisting; a step of thinning the first substrate of a joined body, to a thickness of 1-30 μm by polishing the first substrate; and a step of obtaining a large number of terahertz-wave detection elements by cutting the joined body. The oxide layer is formed such that the first substrate becomes convex to a side of the one main surface by causing a tensile stress to act on it.
    • 提供了具有高空间分辨率并且抑制裂纹发生的太赫兹波检测元件。 一种制造能够检测太赫兹波的空间强度分布的检测元件的方法包括:在由电光晶体组成的第一基板的一个主表面上形成氧化物层的步骤; 通过由粘合剂组成的粘合剂将第一基板的一个主表面和第二基板接合的步骤; 通过研磨第一基板,使接合体的第一基板变薄至厚度为1-30μm的步骤; 以及通过切割接合体获得大量的太赫兹波检测元件的步骤。 形成氧化物层,使得第一基板通过使拉伸应力作用在凸起到一个主表面的一侧。
    • 3. 发明申请
    • Electromagnetic Wave Radiation Element and Method for Producing Same
    • 电磁波辐射元件及其制作方法
    • US20140002891A1
    • 2014-01-02
    • US14021014
    • 2013-09-09
    • NGK INSULATORS, LTD.
    • Jungo KondoYuichi IwataTetsuya Ejiri
    • G02F1/35
    • G02F1/353G02F1/3534G02F2201/30G02F2203/13
    • A device of irradiating an electromagnetic wave irradiates an electromagnetic wave having a target frequency in a range of 0.1 THz to 30 THz to the outside of a crystal. The device includes a main body 7 composed of a non-linear optical crystal and a sub wavelength grating structure 5 formed on a surface of the main body 7. The sub wavelength grating structure 5 includes column shaped bodies 6 regularly arranged on a surface 7a of the main body 7. Each of the column shaped bodies 6 includes a constant width part 6d having a constant width and a base part 6g provided from the surface toward the constant width part 6d. A surface 6b of the base part 6g has a shape of an arc having a center of curvature in the outside of the base part 6g viewed in a cross section of the column shaped body cut along a direction X or Y in which the column shaped bodies are arranged.
    • 照射电磁波的装置将具有0.1THz〜30THz范围内的目标频率的电磁波照射到晶体外部。 该装置包括由主体7的表面上形成的非线性光学晶体和子波长光栅结构5构成的主体7.子波长光栅结构5包括:规则地布置在主体7的表面7a上的柱状体6 每个柱状体6包括具有恒定宽度的恒定宽度部分6d和从表面向恒定宽度部分6d提供的基部6g。 基部6g的表面6b具有在沿着X方向或Y方向切割的柱状体的截面中观察到的基部6g的外侧的曲率中心的圆弧状,其中列形体 被安排。
    • 4. 发明授权
    • Semiconductor wavelength converting devices and light sources for generating infrared rays
    • 用于产生红外线的半导体波长转换装置和光源
    • US08531760B2
    • 2013-09-10
    • US13713132
    • 2012-12-13
    • NGK Insulators, Ltd.
    • Jungo KondoYuichi IwataTetsuya Ejiri
    • G02F1/35G02F2/02
    • G02F1/35B82Y20/00G02F1/3556G02F1/39G02F2001/3546G02F2001/3548H01S3/0092H01S3/094H01S3/2391
    • It is provided a wavelength converting device oscillating an idler light having a wavelength of 5 to 10 μm from a pump light. The wavelength of the idler light is longer than that of the pump light. The wavelength converting device includes a wavelength converting layer 5 of a semiconductor non-linear optical crystal and having a thickness of 50 μm or smaller. The wavelength converting layer 5 includes a crystal orientation inversion structure wherein crystal orientation of the optical crystal is inverted at a predetermined period and at least one flat main face 5b. The device further includes a Peltier device 2 controlling a temperature of the wavelength converting layer 5; and a clad portion 4 joined with the flat main face 5b of the wavelength converting layer 5 and provided between the wavelength converting layer 5 and the Peltier device 2. The pump light, idler light and signal light satisfies a particular phase matching condition.
    • 提供了一种从泵浦光中振荡波长为5至10微米的惰轮的波长转换装置。 惰轮的波长比泵浦光的波长长。 波长转换装置包括半导体非线性光学晶体的波长转换层5,厚度为50μm或更小。 波长转换层5包括晶体取向反转结构,其中光学晶体的晶体取向在预定周期反转,并且至少一个平坦主面5b。 该装置还包括控制波长转换层5的温度的珀耳帖装置2; 以及与波长转换层5的平面主面5b连接并设置在波长转换层5和珀耳帖装置2之间的包层部4.泵浦光,空转光和信号光满足特定的相位匹配条件。
    • 8. 发明授权
    • Optical modulation element
    • 光调制元件
    • US08712204B2
    • 2014-04-29
    • US14021148
    • 2013-09-09
    • NGK Insulators, Ltd.
    • Jungo KondoYuichi IwataTetsuya Ejiri
    • G02B6/10G02F1/295
    • G02F1/035G01N15/1434G02B6/122G02F1/2252G02F1/2255G02F2001/212G02F2201/05G02F2201/063G02F2201/066G02F2201/127G02F2202/28G02F2203/21G02F2203/50G02F2203/60
    • An optical modulation device 1 includes a supporting body 2 including a pair of grooves 2b, 2c and a protrusion 2d between the grooves, a ridge par 6 including a channel type optical waveguide capable of multi mode propagation, a first side plate part 3A formed in a first side of the ridge part 6, a second side plate part 3B formed in a second side of the ridge part, a first adhesive layer 4A adhering the first side plate part 3A and the supporting body 2, a second adhesive layer 4B adhering the second side plate part 3B and the supporting body 2, and a third adhesive layer 4C adhering the ridge part 6 and the protrusion 2d. The device 1 further includes a first electrode 7A provided on a side face 6b of the ridge part on the first groove side, and a side face 3b and an upper face 3c of the first side plate part, and a second electrode 7B provided on a side face 6c of the ridge part 6 in the second groove side, the second groove 2c and a side face 3b and an upper face 3c of the second side plate part 3B. The first electrode 7A and the second electrode 7B apply a modulation voltage modulating light propagating in the channel type optical waveguide.
    • 光调制装置1包括支撑体2,其包括一对槽2b,2c和凹槽之间的突起2d,包括能够进行多模传播的通道型光波导的脊6,形成在第一侧板部3A中的第一侧板部3A 脊部6的第一侧,形成在脊部的第二侧的第二侧板部3B,附着有第一侧板部3A和支撑体2的第一粘合层4A,附着在第二侧板部3A上的第二粘合层4B 第二侧板部3B和支撑体2,以及粘附脊部6和突起2d的第三粘合层4C。 装置1还包括设置在第一槽侧的脊部的侧面6b上的第一电极7A和第一侧板部的侧面3b和上表面3c,以及设置在第一槽部侧的第二电极7B 第二槽侧的脊部6的侧面6c,第二槽2c和侧面3b以及第二侧板部3B的上表面3c。 第一电极7A和第二电极7B施加在沟道型光波导中传播的调制电压调制光。
    • 9. 发明授权
    • Electromagnetic wave oscillating devices and a method of producing the same
    • 电磁波振荡装置及其制造方法
    • US08542433B2
    • 2013-09-24
    • US13718511
    • 2012-12-18
    • NGK Insulators, Ltd.
    • Jungo KondoYuichi IwataTetsuya Ejiri
    • G02F1/35G02F2/02H01S5/06
    • H01S5/0604G02F1/3534G02F2201/30G02F2201/38G02F2203/13
    • It is provided a device oscillating an electromagnetic wave having a target frequency of 0.1 THz to 30 THz. The device includes a main body made of a non-linear optical crystal and a sub-wavelength grating structure formed on the main body. The sub-wavelength grating structure includes protrusions arranged in first direction “X” and second direction “Y” on the main body, first grooves 3X each provided between the adjacent protrusions and extending in the first direction, and second grooves 3Y each provided between the adjacent protrusions and extending in the second direction. Each of the protrusions includes a pair of first faces opposing in the first direction “X” with each other and a pair of second faces opposing in the second direction “Y” with each other. The width of the first face is made smaller from the main body 7 toward an upper end 2c of the protrusion 2.
    • 提供了一种振荡目标频率为0.1THz至30THz的电磁波的装置。 该装置包括由主体构成的非线性光学晶体和亚波长光栅结构的主体。 亚波长光栅结构包括在主体上沿第一方向“X”和第二方向“Y”布置的突起,每个设置在相邻突起之间并在第一方向上延伸的第一凹槽3X, 相邻的突起并沿第二方向延伸。 每个突起包括在第一方向“X”彼此相对的一对第一面和在第二方向“Y”上相对的一对第二面。 第一面的宽度从主体7朝向突起2的上端2c变小。