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    • 2. 发明申请
    • Systems and methods for three-dimensional lithography and nano-indentation
    • 三维光刻和纳米压痕的系统和方法
    • US20050257709A1
    • 2005-11-24
    • US10699287
    • 2003-10-31
    • Tony MulePaul KohlMuhannad BakirKevin MartinJames MeindlHiren Thacker
    • Tony MulePaul KohlMuhannad BakirKevin MartinJames MeindlHiren Thacker
    • B41F1/00B81C1/00G03F7/00
    • G03F7/00B81B2201/042B81B2201/047B81B2201/058B81B2203/0384B81C1/00119B81C2201/0108B81C2201/0152B81C2201/0159B82Y10/00B82Y40/00G03F7/0002G03F7/0015
    • Systems and methods for three dimensional lithography, nano-indentation, and combinations thereof are disclosed. One exemplary three dimensional lithography method, among others, includes: providing a substrate having at least one optical element, wherein the optical element is selected from a refractive element and a diffractive element; disposing a polymer layer on the substrate and the at least one optical element, wherein the polymer layer includes a polymer material selected from a positive-tone polymer material and a negative-tone polymer material; positioning a mask adjacent the polymer layer, wherein the mask does not cover at least one directly exposed portion of the polymer material directly overlaying the at least one element; and exposing the at least one directly exposed portion of the polymer material to optical energy, wherein the optical energy passes through the at least one directly exposed portion of the polymer material and interacts with the element, and the element redirects the optical energy through the polymer material forming at least one area of indirectly exposed polymer material.
    • 公开了用于三维光刻,纳米压痕及其组合的系统和方法。 一种示例性的三维光刻方法,其中包括:提供具有至少一个光学元件的衬底,其中所述光学元件选自折射元件和衍射元件; 在所述基板和所述至少一个光学元件上设置聚合物层,其中所述聚合物层包括选自正性聚合物材料和负性聚合物材料的聚合物材料; 将掩模定位在所述聚合物层附近,其中所述掩模不覆盖直接覆盖所述至少一个元件的聚合物材料的至少一个直接暴露部分; 并且将所述聚合物材料的至少一个直接暴露部分暴露于光能,其中所述光能通过所述聚合物材料的所述至少一个直接暴露部分并且与所述元件相互作用,并且所述元件将所述光能重定向通过所述聚合物 形成间接暴露的聚合物材料的至少一个区域的材料。