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1. 发明授权

US06709870B2 Sample extracting device and adding device 失效
标题翻译：样品提取装置和添加装置
公开(公告)号：US06709870B2
公开(公告)日：2004-03-23
申请号：US09739327
申请日：2000-12-19
申请人： Motoo Suzuki , Takashi Ishikawa , Hirokazu Saito
发明人： Motoo Suzuki , Takashi Ishikawa , Hirokazu Saito
IPC分类号： B01L302
CPC分类号： G01N1/14 , G01N35/1004 , Y10T436/114998 , Y10T436/2575
摘要： A sample tube of a sampling valve is moved up and down by a cylinder. When the sample tube is moved downward, a sample inlet opposes a stored sample, and the sample can be extracted. When the sample tube is moved upward, the sample inlet opposes a cleaning liquid path. Thus, cleaning liquid is fed into the cleaning liquid path from a cleaning liquid supply port of a cleaning pipe. The cleaning liquid flows within the sample tube from the sample inlet, and flows out from a sample discharge port. Thus, an entire interior of the sample tube can be cleaned. In a sample extracting device using the sampling valve, a state in which no air or impurities are mixed in the sample can always be maintained, such that stable extraction can be carried out.
摘要翻译：采样阀的样品管由气缸上下移动。当样品管向下移动时，样品入口与存储的样品相对，并且可以提取样品。当样品管向上移动时，样品入口与清洁液体路径相反。因此，清洗液从清洗管的清洗液供给口送入清洗液路径。清洗液从样品入口在样品管内流动，从样品排出口流出。因此，可以清洁样品管的整个内部。在使用采样阀的样品提取装置中，可以始终保持在样品中不混合空气或杂质的状态，从而可以进行稳定的提取。

2. 发明申请

US20120329692A1 Wet Friction Clutch - Lubricant Systems Providing High Dynamic Coefficients of Friction Through the Use of Sodium Detergents 审中-公开
标题翻译：湿摩擦离合器 - 润滑系统通过使用洗涤剂提供高动态摩擦系数
公开(公告)号：US20120329692A1
公开(公告)日：2012-12-27
申请号：US13579638
申请日：2010-02-19
申请人： Joe R. Noles, JR. , Hirokazu Saito , Philip Skinner , Raymond F. Watts , Keiji Hayashi , Atsushi Suzuki , Koji Saito
发明人： Joe R. Noles, JR. , Hirokazu Saito , Philip Skinner , Raymond F. Watts , Keiji Hayashi , Atsushi Suzuki , Koji Saito
IPC分类号： C10M141/10 , F16D13/74
CPC分类号： C10M141/10 , C10M141/12 , C10M2207/042 , C10M2207/126 , C10M2207/144 , C10M2207/289 , C10M2215/04 , C10M2215/042 , C10M2215/08 , C10M2215/224 , C10M2215/28 , C10M2219/022 , C10M2219/046 , C10M2223/04 , C10M2223/041 , C10M2223/043 , C10M2223/045 , C10M2223/047 , C10M2223/049 , C10N2230/06 , C10N2230/42 , C10N2230/44 , C10N2230/45 , C10N2240/04 , C10N2240/042 , C10N2240/044 , C10N2240/045 , C10N2240/08 , C10N2260/14 , C10N2260/12 , C10N2210/01 , C10N2210/02
摘要： A wet friction clutch-lubricant system wherein a wet friction clutch having a cellulose-based friction lining, or a device including such a clutch, is lubricated with a lubricant composition a major amount of oil of lubricating viscosity and minor effective amounts of performance enhancing additives including (a) one or more ashless dispersant; (b) one or more organic phosphorus compound and (c) one or more sodium salt of an organic acid; and optionally, (d) an auxiliary friction modifier.
摘要翻译：一种湿式摩擦离合器 - 润滑剂系统，其中具有纤维素基摩擦衬片的湿摩擦离合器或包括这种离合器的装置用润滑剂组合物润滑，润滑剂组合物具有大量润滑粘度的油和少量有效量的性能增强添加剂包括（a）一种或多种无灰分散剂; （b）一种或多种有机磷化合物和（c）一种或多种有机酸的钠盐; 和（d）辅助摩擦改性剂。

3. 发明申请

US20110315555A1 PLATING METHOD 审中-公开
标题翻译：涂层方法
公开(公告)号：US20110315555A1
公开(公告)日：2011-12-29
申请号：US13165865
申请日：2011-06-22
申请人： Hirokazu Saito , Hideyuki Sameshima
发明人： Hirokazu Saito , Hideyuki Sameshima
IPC分类号： C25D5/02
CPC分类号： C25D17/10 , C25D5/02 , C25D5/08 , C25D7/12 , C25D17/001
摘要： Disclosed is a plating method including: performing plating on a plating surface of a plating substrate with a cathode electrode contacting an area in an outer circumferential section of the plating substrate where the cathode electrode is to be contacted, the plating substrate being provided with a dummy plating area between the area where the cathode electrode is to be contacted and a product area on the plating surface of the plating substrate, by supplying a plating solution to the plating surface of the plating substrate and applying electric current between the cathode electrode and an anode electrode via the plating solution.
摘要翻译：公开了一种电镀方法，包括：在镀覆基板的镀覆表面上进行电镀，其中阴极与镀覆衬底的外接部分的接触阴极的区域接触，电镀衬底设有虚拟通过向镀覆基板的电镀面供给电镀液，在阴极电极和阳极之间施加电流，在要接触阴极的区域与电镀基板的电镀面的产品区域之间的电镀面积电极通过电镀液。

4. 发明授权

US07345929B2 Semiconductor memory device and defect remedying method thereof 失效
公开(公告)号：US07345929B2
公开(公告)日：2008-03-18
申请号：US11714867
申请日：2007-03-07
申请人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
发明人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
IPC分类号： G11C7/10
CPC分类号： H01L24/06 , G11C5/025 , G11C5/04 , G11C5/063 , G11C11/406 , G11C29/06 , G11C29/12005 , G11C29/12015 , G11C29/24 , G11C29/34 , G11C29/50 , G11C29/50012 , G11C29/70 , G11C29/80 , G11C29/804 , G11C29/832 , G11C29/844 , G11C2029/2602 , H01L24/05 , H01L24/45 , H01L24/48 , H01L27/0207 , H01L27/105 , H01L27/10897 , H01L27/11898 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/05624 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/73215 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01037 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01043 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01054 , H01L2924/01055 , H01L2924/01058 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

5. 发明授权

US07016236B2 Semiconductor memory device and defect remedying method thereof 失效
标题翻译：半导体存储器件及其缺陷补救方法
公开(公告)号：US07016236B2
公开(公告)日：2006-03-21
申请号：US11101504
申请日：2005-04-08
申请人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
发明人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
IPC分类号： G11C16/04
CPC分类号： H01L24/06 , G11C5/025 , G11C5/04 , G11C5/063 , G11C11/406 , G11C29/06 , G11C29/12005 , G11C29/12015 , G11C29/24 , G11C29/34 , G11C29/50 , G11C29/50012 , G11C29/70 , G11C29/80 , G11C29/804 , G11C29/832 , G11C29/844 , G11C2029/2602 , H01L24/05 , H01L24/45 , H01L24/48 , H01L27/0207 , H01L27/105 , H01L27/10897 , H01L27/11898 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/05624 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/73215 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01037 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01043 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01054 , H01L2924/01055 , H01L2924/01058 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor memory device formed on a semiconductor chip comprises a plurality of first memory arrays, a plurality of second memory arrays, a first voltage generator, and a plurality of first bonding pads. The semiconductor chip is divided into a first rectangle region, a second rectangle region, and a third rectangle region and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The plurality of first memory arrays are formed in the first rectangle region. The plurality of second memory arrays are formed in the second rectangle region. The voltage generator and the plurality of first bonding pads are arranged in the third rectangle region. The plurality of first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the plurality of second memory arrays.
摘要翻译：形成在半导体芯片上的半导体存储器件包括多个第一存储器阵列，多个第二存储器阵列，第一电压发生器和多个第一焊盘。半导体芯片被分成第一矩形区域，第二矩形区域和第三矩形区域，并且第三矩形区域被布置在第一矩形区域和第二矩形区域之间。多个第一存储器阵列形成在第一矩形区域中。多个第二存储器阵列形成在第二矩形区域中。电压发生器和多个第一接合焊盘被布置在第三矩形区域中。多个第一接合焊盘布置在第一矩形区域和电压发生器之间，并且在电压发生器和多个第二存储器阵列之间没有布置接合焊盘。

6. 发明授权

US06413706B1 Dispersion or molten product of water-insoluble photographically useful compounds, producing method thereof, coating compositions and silver halide photographic light-sensitive material using the same 失效
标题翻译：水不溶性照相用化合物的分散体或熔融体，其制造方法，涂料组合物及使用其的卤化银照相感光材料
公开(公告)号：US06413706B1
公开(公告)日：2002-07-02
申请号：US09568806
申请日：2000-05-11
申请人： Masatoshi Nakanishi , Hirokazu Saito
发明人： Masatoshi Nakanishi , Hirokazu Saito
IPC分类号： G03C108
CPC分类号： B01F5/0268 , G03C1/005 , Y10S430/136
摘要： There is disclosed a method for producing an aqueous dispersion of a water-insoluble photographically useful compound, by mixing a composition containing at least one water-insoluble photographically useful organic compound with an aqueous medium, and finely dividing the mixture into particulates by a super-high-pressure homogenizer at 180 MPa (1800 bar) or higher. According to the method, the aqueous dispersion of the water-insoluble photographically useful compound can be produced without using a low-boiling solvent, with excellent energy efficiency and in a simple step. Further, there is also disclosed a silver halide photographic light-sensitive material utilizing the dispersion.
摘要翻译：公开了通过将含有至少一种水不溶性摄影有机化合物的组合物与水性介质混合而制备水不溶性照相用化合物的水性分散体的方法，并将该混合物细分为微粒， 180MPa（1800巴）或更高的高压均化器。根据该方法，可以在不使用低沸点溶剂的情况下制造水不溶性照相用化合物的水性分散体，能量效率优异且简单。此外，还公开了利用该分散体的卤化银照相感光材料。

7. 发明授权

US06372420B1 Method for producing silver halide photographic emulsion 失效
标题翻译：制备卤化银照相乳剂的方法
公开(公告)号：US06372420B1
公开(公告)日：2002-04-16
申请号：US09533989
申请日：2000-03-24
申请人： Masaaki Miki , Hirokazu Saito
发明人： Masaaki Miki , Hirokazu Saito
IPC分类号： G03C1005
CPC分类号： G03C1/0051 , G03C1/015 , G03C1/047 , G03C2001/0058
摘要： Disclosed is a method for producing a silver halide photographic emulsion comprising turning at least one of an aqueous solution of a silver salt and an aqueous solution of a halide into a linear jet stream having a high flow rate, and mixing the two kinds of solutions with each other for a short time, thereby continuously forming silver halide grains.
摘要翻译：本发明公开了一种卤化银照相乳剂的制造方法，其特征在于，将银盐水溶液和卤化物水溶液中的至少一种转化成具有高流速的线性喷射流，并将两种溶液与彼此短时间，从而连续地形成卤化银颗粒。

8. 发明授权

US6049500A Semiconductor memory device and defect remedying method thereof 有权
公开(公告)号：US6049500A
公开(公告)日：2000-04-11
申请号：US153462
申请日：1998-09-15
申请人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
发明人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
IPC分类号： G11C5/00 , G11C5/02 , G11C5/06 , G11C11/34 , G11C11/406 , H01L23/485 , G11C8/00
CPC分类号： G11C5/025 , G11C11/406 , G11C5/063 , H01L24/05 , H01L24/06 , H01L24/48 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/73215 , H01L24/45 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01033 , H01L2924/01037 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01043 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01054 , H01L2924/01055 , H01L2924/01058 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01087 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025
摘要： Herein disclosed is a semiconductor memory device, in which peripheral circuits are arranged in a cross area of a semiconductor chip composed of the longitudinal center portions and the transverse center portions, and in which memory arrays are arranged in the four regions which are divided by the cross area. Thanks to this structure in which the peripheral circuits are arranged at the center portion of the chip, the longest signal transmission paths can be shortened to about one half of the chip size to speed up the DRAM which is intended to have a large storage capacity.

9. 发明授权

US5702851A Method of producing a silver halide photographic emulsion, apparatus for the same, method of measuring a silver or halogen ion concentration and an apparatus for the same 失效
标题翻译：制备卤化银照相乳剂的方法，其设备，银或卤素离子浓度测定方法及其装置
公开(公告)号：US5702851A
公开(公告)日：1997-12-30
申请号：US549543
申请日：1995-10-27
申请人： Hirokazu Saito , Sugihiko Tada
发明人： Hirokazu Saito , Sugihiko Tada
IPC分类号： G03C1/015 , G03K1/015
CPC分类号： G03C1/015
摘要： A method of producing a silver halide photographic emulsion in which a silver ion concentration in precipitation of a silver halide emulsion in a precipitation bath is controlled, wherein a precipitation bath in which stirring is conducted rapidly and uniformly, and crystal formation and crystal growth are uniformly performed is used, the method comprises the steps of: in a start period of precipitation, quantitavely adding a silver nitrate solution and a halogen salt solution at a constant ratio flow rate; when an E.sub.Ag value reaches a designated E.sub.Ag value region in the vicinity of a preset target E.sub.Ag value, starting a control of an adding rate of the halogen salt solution by using a controller which has an operation period equal to or shorter than 1 sec.; and after holding a tuning parameter of a proportional, integral and differential (PID) action controller to a minimum response level, conducting a control in which the tuning parameter is switched to an optimum control tuning parameter which corresponds to the preset target value and a solute rate of silver/halogen ions to be added.
摘要翻译：一种卤化银照相乳剂的制备方法，其中控制沉淀浴中的卤化银乳剂沉淀中的银离子浓度，其中快速且均匀地进行搅拌的沉淀浴以及晶体生成和晶体生长均匀所述方法包括以下步骤：在起始沉淀期间，以恒定比例流量定量加入硝酸银溶液和卤素盐溶液; 当EAg值达到预设目标EAg值附近的指定EAg值区域时，通过使用具有等于或小于1sec的操作周期的控制器开始控制卤盐溶液的添加率; 并且在将比例积分微分（PID）动作控制器的调谐参数保持在最小响应水平之后，进行将调谐参数切换到对应于预设目标值的最佳控制调谐参数的控制和溶质银/卤离子的添加速率。

10. 发明授权

US5440451A Memory Assembly 失效
标题翻译：内存装配
公开(公告)号：US5440451A
公开(公告)日：1995-08-08
申请号：US163428
申请日：1993-12-08
申请人： Hirokazu Saito , Takeshi Iijima
发明人： Hirokazu Saito , Takeshi Iijima
IPC分类号： B42D15/10 , G06K19/07 , H01L23/055 , H01L23/24 , H01L23/498 , H01L23/60 , H05K7/02 , H01L23/02 , H01L23/28
CPC分类号： H01L23/055 , H01L23/24 , H01L23/49827 , H01L23/60 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01079 , H01L2924/09701 , H01L2924/14 , H01L2924/1433 , H01L2924/181
摘要： A memory assembly, comprises a wiring board having wiring patterns, the wiring patterns having a plurality of electrodes, each of the wiring patterns having a connecting terminal formed on a single main surface of the wiring board, a memory device mounted to the wiring board and having a plurality of electrodes connected to the electrodes of the wiring patterns, and an electrical insulator mounted to the main surface of the wiring board and having a shape to expose the connecting terminal to the atmosphere. The insulator insulates the wiring patterns, the electrodes of the wiring patterns and the connecting terminal from possible electrical charges on a surface of the memory assembly to protect the memory device from being electrically charged and discharged. Even if the exterior surface of the memory assembly is charged with possible static electricity, the interior of the memory assembly is protected from being electrically charged and discharged.
摘要翻译：一种存储器组件，包括具有布线图案的布线板，布线图案具有多个电极，每个布线图案具有形成在布线板的单个主表面上的连接端子，安装到布线板的存储器件和具有连接到所述布线图案的电极的多个电极，以及安装在所述布线板的主表面上并具有将所述连接端子暴露于大气的形状的电绝缘体。绝缘体将布线图案，布线图案的电极和连接端子与存储器组件的表面上的可能的电荷绝缘，以保护存储器件不被充电和放电。即使存储器组件的外表面充有可能的静电，存储器组件的内部也被保护而不被充电和放电。

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