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1. 发明授权

US06434038B1 Non-volatile memory using ferroelectric material and manufacturing method thereof 有权
标题翻译：使用铁电材料的非易失性存储器及其制造方法
公开(公告)号：US06434038B1
公开(公告)日：2002-08-13
申请号：US09791760
申请日：2001-02-26
申请人： Morihumi Ohno
发明人： Morihumi Ohno
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： A non-volatile memory including a storage device composed of a ferroelectric material having first and second remaining polarization characteristics offset from each other. Selection of a first or a second remaining polarization characteristic is determined by a predetermined voltage applied to the ferroelectric material. A controller outputs a control signal, in response to a predetermined address signal, which is applied to the storage device and the controller. The address signal includes for each address a data portion and an offset portion, the offset portion corresponding to either the first or the second remaining polarization characteristic. The control signal couples a first predetermined voltage to the storage device when the offset portion of the address signal corresponds to the first remaining polarization characteristic and couples a second predetermined voltage to the storage device when the offset portion of the address signal corresponds to the second remaining polarization characteristic. A reader coupled to the controller outputs data from the storage device at a remaining polarization value selected by the address signal in accordance with the control signal.
摘要翻译：一种非易失性存储器，包括由具有彼此偏移的第一和第二剩余极化特性的铁电材料构成的存储装置。选择第一或第二剩余极化特性由施加到铁电材料的预定电压来确定。控制器响应于预定的地址信号输出一个控制信号，该地址信号被施加到存储设备和控制器。地址信号为每个地址包括数据部分和偏移部分，偏移部分对应于第一或第二剩余极化特性。当地址信号的偏移部分对应于第一剩余极化特性时，控制信号将第一预定电压耦合到存储装置，并且当地址信号的偏移部分对应于第二剩余极化特性时将第二预定电压耦合到存储装置极化特性。耦合到控制器的读取器根据控制信号以由地址信号选择的剩余极化值从存储装置输出数据。

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