专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130234198A1 Electrical Circuit Protection Design with Dielectrically-Isolated Diode Configuration and Architecture 审中-公开
标题翻译：具有绝缘二极管配置和架构的电路保护设计
公开(公告)号：US20130234198A1
公开(公告)日：2013-09-12
申请号：US13413621
申请日：2012-03-06
申请人： Moiz Khambaty , David Burgess , Vallangiman V. Srinivasan
发明人： Moiz Khambaty , David Burgess , Vallangiman V. Srinivasan
IPC分类号： H01L29/88 , H01L29/861
CPC分类号： H01L29/861 , H01L27/0255 , H01L29/866
摘要： A novel electrical circuit protection design with dielectrically-isolated diode configuration and architecture is disclosed. In one embodiment of the invention, a plurality of diodes connected in series is monolithically integrated in a single piece of semiconductor substrates by utilizing dielectrically-isolated trenching and silicon-on-insulator substrates, which enable formation of “silicon islands” to insulate a diode structure electrically from adjacent structures. In one embodiment of the invention, the plurality of diodes connected in series includes at least one Zener diode, which provides a clamping voltage approximately equal to its breakdown voltage value in case of a voltage spike or a power surge event. In another embodiment of the invention, the plurality of diodes connected in series includes a scalable number of monolithically-integrated forward-bias PN diodes, wherein the summation of the forward-bias voltage of each PN diode is equivalent to a net clamping voltage value for an electrical circuit protection design.
摘要翻译：公开了一种具有介电隔离二极管配置和架构的新型电路保护设计。在本发明的一个实施例中，串联连接的多个二极管通过利用介电隔离的沟槽和绝缘体上硅衬底单片集成在单个半导体衬底中，这使得能够形成“硅岛”以使二极管结构相邻结构。在本发明的一个实施例中，串联连接的多个二极管包括至少一个齐纳二极管，其在电压尖峰或电源浪涌事件的情况下提供大致等于其击穿电压值的钳位电压。在本发明的另一个实施例中，串联连接的多个二极管包括可分级数量的单片集成正向偏置PN二极管，其中每个PN二极管的正向偏置电压的总和等于净钳位电压值，电路保护设计。

IPRDB

热门服务

关于我们

友情链接

联系方式